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1. 发明授权

US08803265B2 Magnetic memory layer and magnetic memory device including the same 有权
标题翻译：磁存储层和包括其的磁存储器件
公开(公告)号：US08803265B2
公开(公告)日：2014-08-12
申请号：US13170870
申请日：2011-06-28
申请人： Woo-chang Lim , Young-hyun Kim , Jun-ho Jeong , Hee-ju Shin
发明人： Woo-chang Lim , Young-hyun Kim , Jun-ho Jeong , Hee-ju Shin
IPC分类号： H01L29/82
CPC分类号： H01L27/228 , G11C11/161 , H01L43/08 , H01L43/10
摘要： A magnetic memory layer and a magnetic memory device including the same, the magnetic memory layer including a first seed layer; a second seed layer on the first seed layer, the second seed layer grown according to a crystal direction with respect to a surface of the first seed layer; and a main magnetic layer on the second seed layer, the main magnetic layer grown according to the crystal direction with respect to a surface of the second seed layer.
摘要翻译：磁存储层和包括该磁存储器的磁存储器件，所述磁存储层包括第一晶种层; 在所述第一种子层上的第二种子层，所述第二种子层相对于所述第一种子层的表面根据晶体方向生长; 以及在所述第二种子层上的主磁性层，所述主磁性层相对于所述第二晶种层的表面根据所述晶体方向生长。

2. 发明授权

US08334148B2 Methods of forming pattern structures 有权
标题翻译：形成图案结构的方法
公开(公告)号：US08334148B2
公开(公告)日：2012-12-18
申请号：US13184127
申请日：2011-07-15
申请人： Jun-Ho Jeong , Jang-Eun Lee , Woo-Jin Kim , Hee-Ju Shin , Yong-Hwan Ryu
发明人： Jun-Ho Jeong , Jang-Eun Lee , Woo-Jin Kim , Hee-Ju Shin , Yong-Hwan Ryu
IPC分类号： H01L21/00
CPC分类号： H01L27/228 , H01L43/12
摘要： An example embodiment relates to a method of forming a pattern structure, including forming an object layer on a substrate, and forming a hard mask on the object layer. A plasma reactive etching process is performed on the object layer using an etching gas including a fluorine containing gas and ammonia (NH3) gas together with oxygen gas to form a pattern. The oxygen gas is used for suppressing the removal of the hard mask during the etching process.
摘要翻译：示例性实施例涉及一种形成图案结构的方法，包括在基底上形成物体层，并在物体层上形成硬掩模。使用包含含氟气体和氨（NH 3）气体的蚀刻气体与氧气一起在物体层上进行等离子体反应蚀刻工艺以形成图案。氧气用于在蚀刻过程中抑制硬掩模的去除。

3. 发明授权

US08133429B2 Methods for manufacturing a phase-change memory device 有权
标题翻译：相变存储器件的制造方法
公开(公告)号：US08133429B2
公开(公告)日：2012-03-13
申请号：US12762560
申请日：2010-04-19
申请人： Yong-Ho Ha , Bong-Jin Kuh , Han-Bong Ko , Doo-Hwan Park , Sang-Wook Lim , Hee-Ju Shin
发明人： Yong-Ho Ha , Bong-Jin Kuh , Han-Bong Ko , Doo-Hwan Park , Sang-Wook Lim , Hee-Ju Shin
IPC分类号： B28B1/00 , C23C14/06
CPC分类号： H01L45/06 , C04B35/56 , C04B35/573 , C04B2235/3817 , C04B2235/3839 , C04B2235/3843 , C04B2235/40 , C04B2235/402 , C04B2235/404 , C04B2235/405 , C04B2235/408 , C04B2235/428 , G11C13/0004 , H01L27/2436 , H01L45/1233 , H01L45/144 , H01L45/1625 , H01L45/1675 , H01L45/1683
摘要： In a method of forming a chalcogenide compound target, a first powder including germanium carbide or germanium is prepared, and a second powder including antimony carbide or antimony is prepared. A third powder including tellurium carbide or tellurium is prepared. A powder mixture is formed by mixing the first to the third powders. After a shaped is formed body by molding the powder mixture. The chalcogenide compound target is obtained by sintering the powder mixture. The chalcogenide compound target may include a chalcogenide compound that contains carbon and metal, or carbon, metal and nitrogen considering contents of carbon, metal and nitrogen, so that a phase-change material layer formed using the chalcogenide compound target may stable phase transition, enhanced crystallized temperature and increased resistance. A phase-change memory device including the phase-change material layer may have reduced set resistance and driving current while improving durability and sensing margin.
摘要翻译：在形成硫属化物化合物靶的方法中，制备包括碳化锗或锗的第一粉末，并制备包含锑或锑的第二粉末。制备包括碲化镉或碲的第三种粉末。通过混合第一至第三粉末形成粉末混合物。通过模制粉末混合物形成成形体后。通过烧结粉末混合物获得硫属化物化合物靶。考虑到碳，金属和氮的含量，硫属化物化合物靶可以包括含有碳和金属或碳，金属和氮的硫属化物化合物，使得使用硫属化物化合物靶形成的相变材料层可以稳定的相变，增强结晶温度和阻力增加。包括相变材料层的相变存储器件可以降低设定电阻和驱动电流，同时提高耐久性和感测裕度。

4. 发明申请

US20110315946A1 NONVOLATILE MEMORY DEVICE 审中-公开
标题翻译：非易失性存储器件
公开(公告)号：US20110315946A1
公开(公告)日：2011-12-29
申请号：US13224940
申请日：2011-09-02
申请人： Han-Bong KO , Yong-Ho Ha , Doo-Hwan Park , Bong-Jin Kuh , Hee-Ju Shin
发明人： Han-Bong KO , Yong-Ho Ha , Doo-Hwan Park , Bong-Jin Kuh , Hee-Ju Shin
IPC分类号： H01L47/00
CPC分类号： H01L45/143 , G11C13/0004 , G11C2213/51 , G11C2213/72 , G11C2213/79 , H01L27/2409 , H01L27/2436 , H01L27/2463 , H01L45/06 , H01L45/12 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/16 , H01L45/1675
摘要： A nonvolatile memory device, including a lower electrode on a semiconductor substrate, a phase change material pattern on the lower electrode, an adhesion pattern on the phase change material pattern and an upper electrode on the adhesion pattern, wherein the adhesion pattern includes a conductor including nitrogen.
摘要翻译：一种非易失性存储器件，包括半导体衬底上的下电极，下电极上的相变材料图案，相变材料图案上的粘合图案和粘附图案上的上电极，其中粘附图案包括：导体，包括氮。

5. 发明申请

US20090278107A1 Phase change memory device 审中-公开
标题翻译：相变存储器件
公开(公告)号：US20090278107A1
公开(公告)日：2009-11-12
申请号：US12453334
申请日：2009-05-07
申请人： Do-Hyung Kim , Jun-Soo Bae , Dong-Hyun Im , Sung-Lae Cho , Jin-II Lee , Hye-Young Park , Hee-Ju Shin
发明人： Do-Hyung Kim , Jun-Soo Bae , Dong-Hyun Im , Sung-Lae Cho , Jin-II Lee , Hye-Young Park , Hee-Ju Shin
IPC分类号： H01L47/00
CPC分类号： H01L45/143 , G11C13/0004 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1683
摘要： The phase change memory device includes a first electrode and a second electrode and a first phase change material pattern and a second phase change material pattern interposed between the first electrode and the second electrode, wherein the first and second phase change material patterns have respectively different electrical characteristics.
摘要翻译：相变存储器件包括插入在第一电极和第二电极之间的第一电极和第二电极以及第一相变材料图案和第二相变材料图案，其中第一和第二相变材料图案分别具有不同的电特点

6. 发明授权

US07563639B2 Phase-changeable memory device and method of manufacturing the same 有权
标题翻译：相变存储器件及其制造方法
公开(公告)号：US07563639B2
公开(公告)日：2009-07-21
申请号：US11733131
申请日：2007-04-09
申请人： Hee-Ju Shin , Jong-Chan Shin , Soon-Oh Park , Hyeong-Geun An , Han-Bong Ko
发明人： Hee-Ju Shin , Jong-Chan Shin , Soon-Oh Park , Hyeong-Geun An , Han-Bong Ko
IPC分类号： H01L21/06
CPC分类号： H01L45/06 , H01L27/2463 , H01L45/1233 , H01L45/126 , H01L45/143 , H01L45/144 , H01L45/1683
摘要： In a semiconductor memory device and a method of manufacturing the same, an insulating layer is formed on a substrate having a logic region on which a first pad is provided and a cell region on which a second pad and a lower electrode are subsequently provided. The insulating layer is etched to be a first insulating layer pattern having a first opening exposing the first pad. A first plug is formed in the first opening. The first insulating layer pattern where the first plug is formed is etched to be a second insulating layer pattern having a second opening exposing the lower electrode. A second plug including a phase-changeable material is formed in the second opening. A conductive wire and an upper electrode are formed on the first plug and the second plug, respectively.
摘要翻译：在半导体存储器件及其制造方法中，在具有设置有第一焊盘的逻辑区域的衬底上形成绝缘层，并且随后设置有第二焊盘和下电极的单元区域。绝缘层被蚀刻成具有第一开口的第一绝缘层图案，该第一开口露出第一焊盘。第一插头形成在第一开口中。将形成有第一插塞的第一绝缘层图案蚀刻成具有暴露下电极的第二开口的第二绝缘层图案。包括相变材料的第二插头形成在第二开口中。导线和上电极分别形成在第一插头和第二插头上。

7. 发明授权

US09178135B2 Magnetic device 有权
标题翻译：磁性装置
公开(公告)号：US09178135B2
公开(公告)日：2015-11-03
申请号：US14254858
申请日：2014-04-16
申请人： Young-hyun Kim , Hee-ju Shin , Woo-jin Kim , Sang-hwan Park
发明人： Young-hyun Kim , Hee-ju Shin , Woo-jin Kim , Sang-hwan Park
IPC分类号： H01L43/02 , H01L43/10 , H01L43/08 , H01L43/12 , H01L27/22
CPC分类号： H01L43/10 , G11C11/161 , H01L27/228 , H01L43/08 , H01L43/12
摘要： A magnetic device can include a tunnel bather and a hybrid magnetization layer disposed adjacent the tunnel barrier. The hybrid magnetization layer can include a first perpendicular magnetic anisotropy (PMA) layer, a second PMA layer, and an amorphous blocking layer disposed between the first and second PMA layers. The first PMA layer can include a multi-layer film in which a first layer formed of Co and a second layer formed of Pt or Pd are alternately stacked. A first dopant formed of an element different from those of the first and second layers can also be included in the first PMA layer. The second PMA layer can be disposed between the first PMA layer and the tunnel barrier, and can include at least one element selected from a group consisting of Co, Fe, and Ni.
摘要翻译：磁性装置可以包括隧道沐浴器和邻近隧道屏障设置的混合磁化层。混合磁化层可以包括第一垂直磁各向异性（PMA）层，第二PMA层和设置在第一和第二PMA层之间的非晶形阻挡层。第一PMA层可以包括多层膜，其中由Co形成的第一层和由Pt或Pd形成的第二层交替堆叠。由与第一层和第二层不同的元素形成的第一掺杂剂也可以包括在第一PMA层中。第二PMA层可以设置在第一PMA层和隧道势垒之间，并且可以包括选自由Co，Fe和Ni组成的组中的至少一种元素。

8. 发明授权

US09087977B2 Semiconductor device having pinned layer with enhanced thermal endurance 有权
标题翻译：具有增强耐热性的固定层的半导体器件
公开(公告)号：US09087977B2
公开(公告)日：2015-07-21
申请号：US14254871
申请日：2014-04-16
申请人： Jeong-Heon Park , Ki-Woong Kim , Hee-Ju Shin , Joon-Myoung Lee , Woo-Jin Kim , Jae-Hoon Kim , Se-Chung Oh , Yun-Jae Lee
发明人： Jeong-Heon Park , Ki-Woong Kim , Hee-Ju Shin , Joon-Myoung Lee , Woo-Jin Kim , Jae-Hoon Kim , Se-Chung Oh , Yun-Jae Lee
IPC分类号： H01L43/02 , H01L43/08 , H01F10/32 , G11C11/16
CPC分类号： H01L43/02 , G11C11/161 , H01F10/30 , H01F10/32 , H01F10/3254 , H01F10/3272 , H01L23/528 , H01L27/222 , H01L43/08 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device is provided having a free layer and a pinned layer spaced apart from each other. A tunnel barrier layer is formed between the free layer and the pinned layer. The pinned layer may include a lower pinned layer, and an upper pinned layer spaced apart from the lower pinned layer. A spacer may be formed between the lower pinned layer and the upper pinned layer. A non-magnetic junction layer may be disposed adjacent to the spacer or between layers in the upper or lower pinned layer.
摘要翻译：提供了具有彼此间隔开的自由层和钉扎层的半导体器件。在自由层和钉扎层之间形成隧道势垒层。被钉扎层可以包括下钉扎层和与下钉扎层隔开的上钉扎层。可以在下钉扎层和上钉扎层之间形成间隔件。非磁性接合层可以邻近间隔物设置在上或下钉扎层中的层之间。

9. 发明授权

US08625325B2 Memory cells including resistance variable material patterns of different compositions 有权
标题翻译：记忆单元包括不同组成的电阻变化材料图案
公开(公告)号：US08625325B2
公开(公告)日：2014-01-07
申请号：US12853329
申请日：2010-08-10
申请人： Hyeong-Geun An , Ik-Soo Kim , Hee-Ju Shin , Dong-Hyun Im , Sung-Lae Cho , Eun-Hee Cho
发明人： Hyeong-Geun An , Ik-Soo Kim , Hee-Ju Shin , Dong-Hyun Im , Sung-Lae Cho , Eun-Hee Cho
IPC分类号： G11C11/56
CPC分类号： G11C13/0069 , G11C11/56 , G11C11/5678 , G11C13/0004 , G11C2013/0092 , G11C2213/56 , G11C2213/72 , H01L27/101
摘要： A non-volatile memory device includes a plurality of word lines, a plurality of bit lines, and an array of variable resistance memory cells each electrically connected between a respective word line and a respective bit line. Each of the memory cells includes first and second resistance variable patterns electrically connected in series between first and second electrodes. A material composition of the first resistance variable pattern is different than a material composition of the second resistance variable pattern. Multi-bit data states of each memory cell are defined by a contiguous increase in size of a programmable high-resistance volume within the first and second resistance variable patterns.
摘要翻译：非易失性存储器件包括多个字线，多个位线，以及每个电连接在相应字线和相应位线之间的可变电阻存储单元阵列。每个存储单元包括在第一和第二电极之间串联电连接的第一和第二电阻可变图案。第一电阻可变图案的材料组成不同于第二电阻变化图案的材料组成。每个存储器单元的多位数据状态由第一和第二电阻变化模式内的可编程高电阻体积的连续增加来定义。

10. 发明申请

US20120142161A1 METHODS FOR MANUFACTURING A PHASE-CHANGE MEMORY DEVICE 有权
标题翻译：制造相变存储器件的方法
公开(公告)号：US20120142161A1
公开(公告)日：2012-06-07
申请号：US13368852
申请日：2012-02-08
申请人： Yong-Ho HA , Bong-Jin KUH , Han-Bong KO , Doo-Hwan PARK , Sang-Wook LIM , Hee-Ju SHIN
发明人： Yong-Ho HA , Bong-Jin KUH , Han-Bong KO , Doo-Hwan PARK , Sang-Wook LIM , Hee-Ju SHIN
IPC分类号： H01L21/62
CPC分类号： H01L45/06 , C04B35/56 , C04B35/573 , C04B2235/3817 , C04B2235/3839 , C04B2235/3843 , C04B2235/40 , C04B2235/402 , C04B2235/404 , C04B2235/405 , C04B2235/408 , C04B2235/428 , G11C13/0004 , H01L27/2436 , H01L45/1233 , H01L45/144 , H01L45/1625 , H01L45/1675 , H01L45/1683
摘要： A method of manufacturing a phase-change memory device comprises forming a contact region on a substrate, forming a lower electrode electrically connected to the contact region, forming a phase-change material layer on the lower electrode using a chalcogenide compound target including carbon and metal, or carbon, nitrogen and metal, and forming an upper electrode on the phase-change material layer.
摘要翻译：一种相变存储器件的制造方法，包括：在基板上形成接触区域，形成与所述接触区域电连接的下部电极，使用包含碳和金属的硫属化物化合物靶，在所述下部电极上形成相变材料层，或碳，氮和金属，并且在相变材料层上形成上电极。

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