专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06248206B1 Apparatus for sidewall profile control during an etch process 失效
标题翻译：在蚀刻过程中用于侧壁轮廓控制的装置
公开(公告)号：US06248206B1
公开(公告)日：2001-06-19
申请号：US08724660
申请日：1996-10-01
申请人： Harald Herchen , Michael D Welch , William Brown , Walter Richardson Merry
发明人： Harald Herchen , Michael D Welch , William Brown , Walter Richardson Merry
IPC分类号： C23F102
CPC分类号： H01J37/32082 , H01J37/3299 , H01L21/31116
摘要： A process is provided for controlling the slope of the sidewalls of an opening produced in a semiconductor wafer during an etch process. Microwave or radio frequency energy is remotely applied to pre-excite a process gas. Radio frequency energy is also supplied to the process gas within the process chamber. The sidewall slope is varied by varying the ratio of the amount of remote microwave or radio frequency energy supplied and that of the radio frequency energy supplied within the process chamber. The sidewall slope is also shaped by controlling the process gas flow rate and composition, and the pressure within the process chamber. A more vertical, anisotropic etch profile is obtained with increased radio frequency energy and lower process chamber pressure. A more horizontal, isotropic profile is obtained with decreased radio frequency energy and higher process chamber pressure. A narrower etched feature having smaller interlayer and active element contact regions than the corresponding feature size on the overlying photoresist layer may thereby be provided.
摘要翻译：提供了一种用于控制在蚀刻工艺期间在半导体晶片中产生的开口的侧壁的斜率的工艺。微波或射频能量被远程应用于预处理气体。射频能量也被提供给处理室内的处理气体。通过改变提供的远程微波或射频能量与处理室内提供的射频能量的比率来改变侧壁倾斜度。侧壁倾斜也通过控制工艺气体流速和组成以及处理室内的压力来成形。通过增加射频能量和较低的处理室压力获得更垂直的各向异性蚀刻轮廓。通过降低射频能量和更高的处理室压力获得更水平，各向同性的曲线。因此可以提供具有比覆盖的光致抗蚀剂层上的相应特征尺寸更小的中间层和有源元件接触区域的较窄蚀刻特征。

2. 发明授权

US6015761A Microwave-activated etching of dielectric layers 失效
标题翻译：电介质层的微波激活蚀刻
公开(公告)号：US6015761A
公开(公告)日：2000-01-18
申请号：US672469
申请日：1996-06-26
申请人： Walter Richardson Merry , William Brown , Harald Herchen , Michael D. Welch
发明人： Walter Richardson Merry , William Brown , Harald Herchen , Michael D. Welch
IPC分类号： H01L21/311 , H01L21/768 , H01L21/00
CPC分类号： H01L21/76807 , H01L21/31116 , H01L21/76804
摘要： A microwave-activated plasma process for etching dielectric layers (20) on a substrate (25) with excellent control of the shape and cross-sectional profile of the etched features (40), high etch rates, and good etching uniformity, is described. A process gas comprising (i) fluorocarbon gas (preferably CF.sub.4), (ii) inorganic fluorinated gas (preferably NF.sub.3), and (iii) oxygen, is used. The process gas is introduced into a plasma zone (55) remote from a process zone (60) and microwaves are coupled into the plasma zone (55) to form a microwave-activated plasma. The microwave-activated plasma is introduced into the process zone (60) to etch the dielectric layer (20) on the substrate (25) with excellent control of the shape of the etched features.
摘要翻译：描述了对蚀刻特征（40）的形状和横截面轮廓具有优异控制，高蚀刻速率和良好的蚀刻均匀性的对基板（25）上的介电层（20）进行蚀刻的微波激活等离子体处理。使用包含（i）碳氟化合物气体（优选CF 4），（ii）无机氟化气体（优选NF 3）和（iii）氧气）的工艺气体。将处理气体引入到远离处理区（60）的等离子体区（55）中，并且将微波耦合到等离子体区（55）中以形成微波激活的等离子体。微波激活的等离子体被引入处理区（60）中，以蚀刻特征的形状的优良控制蚀刻衬底（25）上的电介质层（20）。

3. 发明授权

US06592673B2 Apparatus and method for detecting a presence or position of a substrate 失效
标题翻译：用于检测衬底的存在或位置的装置和方法
公开(公告)号：US06592673B2
公开(公告)日：2003-07-15
申请号：US09322102
申请日：1999-05-27
申请人： Michael D. Welch , Harald Herchen
发明人： Michael D. Welch , Harald Herchen
IPC分类号： B05C1100
CPC分类号： H01L21/67259
摘要： A chamber 25 comprises a support 45 for holding a substrate 20 and a sensor system 135 adapted to detect the presence or proper placement of the substrate 20 on the support 45. The support 45 comprises a window 155 that is transparent and adapted to transmit light therethrough. The sensor system 135 comprises a light source 140 adapted to direct a light beam 150 through the window 155 and a light sensor 160 in the path of the light beam 150. The light beam 150 is sensed by the light sensor 135 when the substrate 20 is properly positioned and the light beam 150 is blocked from the light sensor 135 when the substrate 20 is improperly positioned or vice versa. Preferably, the support 45 comprises an electrostatic chuck 55 adapted to electrostatically hold the substrate 20, the electrostatic chuck 55 comprising a window 155 composed of transparent material or a cut-out or a hole therein.
摘要翻译：腔室25包括用于保持衬底20的支撑件45和适于检测衬底20在支撑件45上的存在或适当放置的传感器系统135.支撑件45包括透明的窗口155，其适于透射光。传感器系统135包括适于将光束150引导通过窗口155的光源140和在光束150的路径中的光传感器160.当基底20是基底20时，光束150被光传感器135感测正确地定位，并且当基板20被不正确地定位时反射光束150并且光束150被阻挡在光传感器135上。优选地，支撑件45包括适于静电保持基板20的静电卡盘55，静电卡盘55包括由透明材料构成的窗口155或其中的切口或孔。

4. 发明授权

US6159297A Semiconductor process chamber and processing method 失效
标题翻译：半导体工艺室和加工方法
公开(公告)号：US6159297A
公开(公告)日：2000-12-12
申请号：US65384
申请日：1998-04-23
申请人： Harald Herchen , William Brown , Ihi Nzeadibe , Dan Kujaneck
发明人： Harald Herchen , William Brown , Ihi Nzeadibe , Dan Kujaneck
IPC分类号： C23F4/00 , C23C16/44 , C23C16/455 , H01J37/32 , H01L21/205 , H01L21/302 , H01L21/3065 , H05H1/46 , C23C16/00
CPC分类号： C23C16/45565 , H01J37/3244
摘要： A process chamber 15 for processing a semiconductor substrate comprising a support 20 for holding the substrate, a gas distributor 35 for distributing process gas into the process chamber, a gas energizer for energizing the process gas, and an exhaust 60 for exhausting process gas from the process chamber. The gas distributor 35 comprises monocrystalline material that provides increased erosion resistance and withstands high temperatures. Preferably, a thermal expansion isolator 115 supports the gas distributor 35 to allow portions of the gas distributor 35 to thermally expand different amounts. The gas distributor 35 can also comprise a transparent window 170 of solid material that transmits an light beam therethrough. Also, the gas distributor 35 can comprise a transparent portion facing the substrate 25 that allows light emissions from the energized gas to pass through without being reflected back onto the substrate.
摘要翻译：一种用于处理半导体衬底的处理室15，包括用于保持衬底的支撑件20，用于将处理气体分配到处理室中的气体分配器35，用于激励处理气体的气体激发器，以及用于从处理室。气体分配器35包括提供增加的耐腐蚀性并承受高温的单晶材料。优选地，热膨胀隔离器115支撑气体分配器35以允许气体分布器35的一部分热膨胀不同的量。气体分配器35还可以包括透射光束的固体材料的透明窗口170。此外，气体分配器35可以包括面向基板25的透明部分，其允许来自激发气体的光发射通过而不被反射回到基板上。

5. 发明授权

US6062237A Polymer removal from top surfaces and sidewalls of a semiconductor wafer 失效
标题翻译：从半导体晶片的顶表面和侧壁去除聚合物
公开(公告)号：US6062237A
公开(公告)日：2000-05-16
申请号：US060173
申请日：1998-04-14
申请人： William Brown , Harald Herchen , Walter Merry , Michael Welch
发明人： William Brown , Harald Herchen , Walter Merry , Michael Welch
IPC分类号： H01L21/302 , H01L21/02 , H01L21/027 , H01L21/3065 , H01L21/311 , H01L21/3213 , B08B6/00
CPC分类号： H01L21/02071 , H01L21/31138
摘要： A process for producing a strip removes photoresist and extraneous deposits of polymer residue on the top surface and sidewalls of a post-metal etch wafer. The photoresist and residue are processed simultaneously by a chemical mechanism comprising reactive species derived from a microwave-excited fluorine-containing downstream gas, and a physical mechanism comprising ion bombardment that results from a radio frequency excited plasma and accompanying wafer self bias. A vacuum pump draws stripped photoresist and residues from the surface of the wafer and exhausts them from the chamber.
摘要翻译：制造带材的方法在后金属蚀刻晶片的顶表面和侧壁上去除光致抗蚀剂和聚合物残余物的外来沉积物。光致抗蚀剂和残余物通过包含衍生自微波激发的含氟下游气体的反应物质的化学机理以及由射频激发等离子体和伴随的晶片自偏压产生的离子轰击的物理机理同时进行处理。真空泵从晶片的表面吸出剥离的光致抗蚀剂和残留物，并将其从室中排出。

6. 发明授权

US5780359A Polymer removal from top surfaces and sidewalls of a semiconductor wafer 失效
公开(公告)号：US5780359A
公开(公告)日：1998-07-14
申请号：US570058
申请日：1995-12-11
申请人： William Brown , Harald Herchen , Walter Merry , Michael Welch
发明人： William Brown , Harald Herchen , Walter Merry , Michael Welch
IPC分类号： H01L21/302 , H01L21/02 , H01L21/027 , H01L21/3065 , H01L21/311 , H01L21/3213
CPC分类号： H01L21/02071 , H01L21/31138
摘要： A process for producing a strip removes photoresist and extraneous deposits of polymer residue on the top surface and sidewalls of a post-metal etch wafer. The photoresist and residue are processed simultaneously by a chemical mechanism comprising reactive species derived from a microwave-excited fluorine-containing downstream gas, and a physical mechanism comprising ion bombardment that results from a radio frequency excited plasma and accompanying wafer self bias. A vacuum pump draws stripped photoresist and residues from the surface of the wafer and exhausts them from the chamber.

7. 发明授权

US5728260A Low volume gas distribution assembly and method for a chemical downstream etch tool 失效
标题翻译：低体积气体分配组件和化学下游蚀刻工具的方法
公开(公告)号：US5728260A
公开(公告)日：1998-03-17
申请号：US654958
申请日：1996-05-29
申请人： William Brown , Harald Herchen , Ihi Nzeadibe , Walter Merry
发明人： William Brown , Harald Herchen , Ihi Nzeadibe , Walter Merry
IPC分类号： H01L21/302 , H01J37/32 , H01L21/3065 , H01L21/00 , C23F1/00
CPC分类号： H01J37/3244
摘要： An improved low-volume gas distribution assembly for a chemical downstream etch tool includes a focusing collar positioned within a process chamber and having a depending shroud in close proximity to a wafer chuck. An apertured gas delivery conduit rests on channels formed in slanted sides of a central tube of the focusing collar. The apertures in the gas delivery conduit are patterned and dimensioned to provide substantially uniform distribution of a process gas over the upper surface of the workpiece. The central tube is sealed with a cover plate and the process chamber is covered with a chamber lid.
摘要翻译：用于化学下游蚀刻工具的改进的低体积气体分配组件包括定位在处理室内并具有紧邻晶片卡盘的垂直护罩的聚焦轴环。多孔气体输送导管支撑在聚焦轴环的中心管的倾斜侧面上形成的通道上。气体输送管道中的孔被图案化并确定尺寸以提供工件气体在工件的上表面上的基本上均匀的分布。中心管用盖板密封，处理室被室盖覆盖。

8. 发明授权

US5819434A Etch enhancement using an improved gas distribution plate 失效
标题翻译：使用改进的气体分配板蚀刻增强
公开(公告)号：US5819434A
公开(公告)日：1998-10-13
申请号：US638884
申请日：1996-04-25
申请人： Harald Herchen , Walter Merry , William Brown
发明人： Harald Herchen , Walter Merry , William Brown
IPC分类号： C23F4/00 , C23C16/44 , C23C16/455 , H01J37/32 , H01L21/205 , H01L21/302 , H01L21/3065 , F26B19/00
CPC分类号： C23C16/45565 , H01J37/3244
摘要： A thin gas distribution plate is provided, consistent with requirements for mechanical rigidity and strength. The gas distribution plate has sufficiently low mass to permit rapid heating to an equilibrium temperature as determined by radiated heat loss. The gas distribution plate has a thinner central cross-section, optionally including smaller diameter apertures formed therethrough; and has a thicker circumferential cross-section, optionally having larger apertures formed therethrough, to thereby promote even gas distribution across the surface of the wafer, while mitigating or eliminating entirely the first wafer effect.
摘要翻译：提供薄气体分配板，符合机械刚度和强度要求。气体分布板具有足够低的质量，以允许快速加热到通过辐射热损失确定的平衡温度。气体分配板具有较薄的中心横截面，可选地包括通过其形成的较小直径的孔; 并且具有更厚的圆周横截面，可选地具有通过其形成的更大的孔，从而促进跨过晶片表面的均匀气体分布，同时减轻或消除完全第一晶片效应。

9. 发明授权

US5789322A Low volume gas distribution assembly for a chemical downstream etch tool 失效
标题翻译：用于化学下游蚀刻工具的低体积气体分配组件
公开(公告)号：US5789322A
公开(公告)日：1998-08-04
申请号：US870110
申请日：1997-06-05
申请人： William Brown , Harald Herchen , Ihi Nzeadibe , Walter Merry
发明人： William Brown , Harald Herchen , Ihi Nzeadibe , Walter Merry
IPC分类号： H01L21/302 , H01J37/32 , H01L21/3065 , C23C16/00 , H01L21/00
CPC分类号： H01J37/3244
摘要： An improved low-volume gas distribution assembly for a chemical downstream etch tool includes a focusing collar positioned within a process chamber and having a depending shroud in close proximity to a wafer chuck. An apertured gas delivery conduit rests on channels formed in slanted sides of a central tube of the focusing collar. The apertures in the gas delivery conduit are patterned and dimensioned to provide substantially uniform distribution of a process gas over the upper surface of the workpiece. The central tube is sealed with a cover plate and the process chamber is covered with a chamber lid.
摘要翻译：用于化学下游蚀刻工具的改进的低体积气体分配组件包括定位在处理室内并具有紧邻晶片卡盘的垂直护罩的聚焦轴环。多孔气体输送导管支撑在聚焦轴环的中心管的倾斜侧面上形成的通道上。气体输送管道中的孔被图案化并确定尺寸以提供工件气体在工件的上表面上的基本上均匀的分布。中心管用盖板密封，处理室被室盖覆盖。

10. 发明授权

US06264852B1 Substrate process chamber and processing method 有权
标题翻译：基板加工室和加工方法
公开(公告)号：US06264852B1
公开(公告)日：2001-07-24
申请号：US09595800
申请日：2000-06-16
申请人： Harald Herchen , William Brown , Ihi Nzeadibe , Dan Kujaneck
发明人： Harald Herchen , William Brown , Ihi Nzeadibe , Dan Kujaneck
IPC分类号： H01L2100
CPC分类号： C23C16/45565 , H01J37/3244
摘要： A method of processing a substrate 25 comprises placing the substrate 25 in a process zone and introducing process gas into the process zone through a gas distributor 35 through which energized gas may be introduced into the process zone. The method also comprises detecting radiation transmitted through the gas distributor 25, which may comprise a monocrystalline material portion. In another version, the gas distributor 25 comprises a thermal expansion isolator.
摘要翻译：处理衬底25的方法包括将衬底25放置在工艺区域中，并通过气体分配器35将工艺气体引入工艺区域，通过该气体分配器35将有活力的气体引入到工艺区域中。该方法还包括检测透过气体分布器25的辐射，气体分布器25可以包括单晶材料部分。在另一个版本中，气体分配器25包括热膨胀隔离器。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式