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1. 发明授权

US6159297A Semiconductor process chamber and processing method 失效
标题翻译：半导体工艺室和加工方法
公开(公告)号：US6159297A
公开(公告)日：2000-12-12
申请号：US65384
申请日：1998-04-23
申请人： Harald Herchen , William Brown , Ihi Nzeadibe , Dan Kujaneck
发明人： Harald Herchen , William Brown , Ihi Nzeadibe , Dan Kujaneck
IPC分类号： C23F4/00 , C23C16/44 , C23C16/455 , H01J37/32 , H01L21/205 , H01L21/302 , H01L21/3065 , H05H1/46 , C23C16/00
CPC分类号： C23C16/45565 , H01J37/3244
摘要： A process chamber 15 for processing a semiconductor substrate comprising a support 20 for holding the substrate, a gas distributor 35 for distributing process gas into the process chamber, a gas energizer for energizing the process gas, and an exhaust 60 for exhausting process gas from the process chamber. The gas distributor 35 comprises monocrystalline material that provides increased erosion resistance and withstands high temperatures. Preferably, a thermal expansion isolator 115 supports the gas distributor 35 to allow portions of the gas distributor 35 to thermally expand different amounts. The gas distributor 35 can also comprise a transparent window 170 of solid material that transmits an light beam therethrough. Also, the gas distributor 35 can comprise a transparent portion facing the substrate 25 that allows light emissions from the energized gas to pass through without being reflected back onto the substrate.
摘要翻译：一种用于处理半导体衬底的处理室15，包括用于保持衬底的支撑件20，用于将处理气体分配到处理室中的气体分配器35，用于激励处理气体的气体激发器，以及用于从处理室。气体分配器35包括提供增加的耐腐蚀性并承受高温的单晶材料。优选地，热膨胀隔离器115支撑气体分配器35以允许气体分布器35的一部分热膨胀不同的量。气体分配器35还可以包括透射光束的固体材料的透明窗口170。此外，气体分配器35可以包括面向基板25的透明部分，其允许来自激发气体的光发射通过而不被反射回到基板上。

2. 发明授权

US06264852B1 Substrate process chamber and processing method 有权
标题翻译：基板加工室和加工方法
公开(公告)号：US06264852B1
公开(公告)日：2001-07-24
申请号：US09595800
申请日：2000-06-16
申请人： Harald Herchen , William Brown , Ihi Nzeadibe , Dan Kujaneck
发明人： Harald Herchen , William Brown , Ihi Nzeadibe , Dan Kujaneck
IPC分类号： H01L2100
CPC分类号： C23C16/45565 , H01J37/3244
摘要： A method of processing a substrate 25 comprises placing the substrate 25 in a process zone and introducing process gas into the process zone through a gas distributor 35 through which energized gas may be introduced into the process zone. The method also comprises detecting radiation transmitted through the gas distributor 25, which may comprise a monocrystalline material portion. In another version, the gas distributor 25 comprises a thermal expansion isolator.
摘要翻译：处理衬底25的方法包括将衬底25放置在工艺区域中，并通过气体分配器35将工艺气体引入工艺区域，通过该气体分配器35将有活力的气体引入到工艺区域中。该方法还包括检测透过气体分布器25的辐射，气体分布器25可以包括单晶材料部分。在另一个版本中，气体分配器25包括热膨胀隔离器。

3. 发明授权

US5728260A Low volume gas distribution assembly and method for a chemical downstream etch tool 失效
标题翻译：低体积气体分配组件和化学下游蚀刻工具的方法
公开(公告)号：US5728260A
公开(公告)日：1998-03-17
申请号：US654958
申请日：1996-05-29
申请人： William Brown , Harald Herchen , Ihi Nzeadibe , Walter Merry
发明人： William Brown , Harald Herchen , Ihi Nzeadibe , Walter Merry
IPC分类号： H01L21/302 , H01J37/32 , H01L21/3065 , H01L21/00 , C23F1/00
CPC分类号： H01J37/3244
摘要： An improved low-volume gas distribution assembly for a chemical downstream etch tool includes a focusing collar positioned within a process chamber and having a depending shroud in close proximity to a wafer chuck. An apertured gas delivery conduit rests on channels formed in slanted sides of a central tube of the focusing collar. The apertures in the gas delivery conduit are patterned and dimensioned to provide substantially uniform distribution of a process gas over the upper surface of the workpiece. The central tube is sealed with a cover plate and the process chamber is covered with a chamber lid.
摘要翻译：用于化学下游蚀刻工具的改进的低体积气体分配组件包括定位在处理室内并具有紧邻晶片卡盘的垂直护罩的聚焦轴环。多孔气体输送导管支撑在聚焦轴环的中心管的倾斜侧面上形成的通道上。气体输送管道中的孔被图案化并确定尺寸以提供工件气体在工件的上表面上的基本上均匀的分布。中心管用盖板密封，处理室被室盖覆盖。

4. 发明授权

US5789322A Low volume gas distribution assembly for a chemical downstream etch tool 失效
标题翻译：用于化学下游蚀刻工具的低体积气体分配组件
公开(公告)号：US5789322A
公开(公告)日：1998-08-04
申请号：US870110
申请日：1997-06-05
申请人： William Brown , Harald Herchen , Ihi Nzeadibe , Walter Merry
发明人： William Brown , Harald Herchen , Ihi Nzeadibe , Walter Merry
IPC分类号： H01L21/302 , H01J37/32 , H01L21/3065 , C23C16/00 , H01L21/00
CPC分类号： H01J37/3244
摘要： An improved low-volume gas distribution assembly for a chemical downstream etch tool includes a focusing collar positioned within a process chamber and having a depending shroud in close proximity to a wafer chuck. An apertured gas delivery conduit rests on channels formed in slanted sides of a central tube of the focusing collar. The apertures in the gas delivery conduit are patterned and dimensioned to provide substantially uniform distribution of a process gas over the upper surface of the workpiece. The central tube is sealed with a cover plate and the process chamber is covered with a chamber lid.
摘要翻译：用于化学下游蚀刻工具的改进的低体积气体分配组件包括定位在处理室内并具有紧邻晶片卡盘的垂直护罩的聚焦轴环。多孔气体输送导管支撑在聚焦轴环的中心管的倾斜侧面上形成的通道上。气体输送管道中的孔被图案化并确定尺寸以提供工件气体在工件的上表面上的基本上均匀的分布。中心管用盖板密封，处理室被室盖覆盖。

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