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1. 发明申请

US20120286237A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND WAFER 审中-公开
标题翻译：半导体发光器件和散热器
公开(公告)号：US20120286237A1
公开(公告)日：2012-11-15
申请号：US13222185
申请日：2011-08-31
申请人： Hajime Nago , Koichi Tachibana , Shigeya Kimura , Takahiro Sato , Taisuke Sato , Toshihide Ito , Shinya Nunoue
发明人： Hajime Nago , Koichi Tachibana , Shigeya Kimura , Takahiro Sato , Taisuke Sato , Toshihide Ito , Shinya Nunoue
IPC分类号： H01L33/06
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/325 , H01S5/34333 , H01S2304/04
摘要： According to one embodiment, a semiconductor light emitting device includes: an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting part. The light emitting part is provided between the n-type semiconductor layer and the p-type semiconductor layer. The light emitting part includes: a plurality of well layers including Inx1Ga1-x1N (0
摘要翻译：根据一个实施例，半导体发光器件包括：n型半导体层，p型半导体层和发光部分。发光部分设置在n型半导体层和p型半导体层之间。发光部分包括：包括In x Ga 1-x1 N（0

2. 发明授权

US08436395B2 Semiconductor light emitting device 失效
标题翻译：半导体发光器件
公开(公告)号：US08436395B2
公开(公告)日：2013-05-07
申请号：US13405961
申请日：2012-02-27
申请人： Takahiro Sato , Shigeya Kimura , Taisuke Sato , Toshihide Ito , Koichi Tachibana , Shinya Nunoue
发明人： Takahiro Sato , Shigeya Kimura , Taisuke Sato , Toshihide Ito , Koichi Tachibana , Shinya Nunoue
IPC分类号： H01L33/36
CPC分类号： H01L33/24 , H01L33/382 , H01L33/42
摘要： According to one embodiment, a semiconductor light emitting device includes a stacked structure unit, a transparent, p-side and n-side electrodes. The unit includes n-type semiconductor layer, a light emitting portion provided on a part of the n-type semiconductor layer and p-type semiconductor layer provided on the light emitting portion. The transparent electrode is provided on the p-type semiconductor layer. The p-side electrode is provided on the transparent electrode. The n-side electrode is provided on the n-type semiconductor layer. The transparent electrode has a hole provided between the n-side and p-side electrodes. A width of the hole along an axis perpendicular to an axis from the p-side electrode toward the n-side electrode is longer than widths of the n-side and p-side electrodes. A distance between the hole and the n-side electrode is not longer than a distance between the hole and the p-side electrode.
摘要翻译：根据一个实施例，半导体发光器件包括堆叠结构单元，透明的p侧和n侧电极。该单元包括n型半导体层，设置在n型半导体层的一部分上的发光部分和设置在发光部分上的p型半导体层。透明电极设置在p型半导体层上。 p侧电极设置在透明电极上。 n侧电极设置在n型半导体层上。透明电极具有设置在n侧和p侧电极之间的孔。沿着与p侧电极朝向n侧电极的轴垂直的轴的孔的宽度比n侧电极和p侧电极的宽度长。孔和n侧电极之间的距离不大于孔和p侧电极之间的距离。

3. 发明申请

US20130001584A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 失效
标题翻译：半导体发光器件
公开(公告)号：US20130001584A1
公开(公告)日：2013-01-03
申请号：US13405961
申请日：2012-02-27
申请人： Takahiro SATO , Shigeya Kimura , Taisuke Sato , Toshihide Ito , Koichi Tachibana , Shinya Nunoue
发明人： Takahiro SATO , Shigeya Kimura , Taisuke Sato , Toshihide Ito , Koichi Tachibana , Shinya Nunoue
IPC分类号： H01L33/32
CPC分类号： H01L33/24 , H01L33/382 , H01L33/42
摘要： According to one embodiment, a semiconductor light emitting device includes a stacked structure unit, a transparent, p-side and n-side electrodes. The unit includes n-type semiconductor layer, a light emitting portion provided on a part of the n-type semiconductor layer and p-type semiconductor layer provided on the light emitting portion. The transparent electrode is provided on the p-type semiconductor layer. The p-side electrode is provided on the transparent electrode. The n-side electrode is provided on the n-type semiconductor layer. The transparent electrode has a hole provided between the n-side and p-side electrodes. A width of the hole along an axis perpendicular to an axis from the p-side electrode toward the n-side electrode is longer than widths of the n-side and p-side electrodes. A distance between the hole and the n-side electrode is not longer than a distance between the hole and the p-side electrode.
摘要翻译：根据一个实施例，半导体发光器件包括堆叠结构单元，透明的p侧和n侧电极。该单元包括n型半导体层，设置在n型半导体层的一部分上的发光部分和设置在发光部分上的p型半导体层。透明电极设置在p型半导体层上。 p侧电极设置在透明电极上。 n侧电极设置在n型半导体层上。透明电极具有设置在n侧和p侧电极之间的孔。沿着与p侧电极朝向n侧电极的轴垂直的轴的孔的宽度比n侧电极和p侧电极的宽度长。孔和n侧电极之间的距离不大于孔和p侧电极之间的距离。

4. 发明授权

US08653498B2 Semiconductor light emitting device 失效
标题翻译：半导体发光器件
公开(公告)号：US08653498B2
公开(公告)日：2014-02-18
申请号：US13032943
申请日：2011-02-23
申请人： Shigeya Kimura , Taisuke Sato , Toshihide Ito , Takahiro Sato , Toshiyuki Oka , Shinya Nunoue
发明人： Shigeya Kimura , Taisuke Sato , Toshihide Ito , Takahiro Sato , Toshiyuki Oka , Shinya Nunoue
IPC分类号： H01L33/40 , H01L33/04
CPC分类号： H01L33/382 , H01L33/20 , H01L33/32 , H01L33/38 , H01L33/42
摘要： According to one embodiment, a semiconductor light emitting device includes: a stacked structural body, a first electrode; and a second electrode. The stacked structural body includes a first semiconductor layer of n-type, a second semiconductor layer of p-type, and a light emitting portion provided therebetween. The first electrode includes a first contact electrode portion. The second electrode includes a second contact electrode portion and a p-side pad electrode. A sheet resistance of the second contact electrode portion is lower than a sheet resistance of the first semiconductor layer. The p-side pad electrode is provided farther inward than a circumscribed rectangle of the first contact electrode portion, and the first contact electrode portion is provided farther outward than a circumscribed rectangle of the p-side pad electrode.
摘要翻译：根据一个实施例，半导体发光器件包括：层叠结构体，第一电极; 和第二电极。层叠结构体包括n型的第一半导体层，p型的第二半导体层和设置在其间的发光部。第一电极包括第一接触电极部分。第二电极包括第二接触电极部分和p侧焊盘电极。第二接触电极部分的薄层电阻低于第一半导体层的薄层电阻。 p侧焊盘电极比第一接触电极部分的外接矩形更靠内侧设置，并且第一接触电极部分比p侧焊盘电极的外接矩形更远地设置。

5. 发明申请

US20120032139A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 失效
标题翻译：半导体发光器件
公开(公告)号：US20120032139A1
公开(公告)日：2012-02-09
申请号：US13032943
申请日：2011-02-23
申请人： Shigeya KIMURA , Taisuke Sato , Toshihide Ito , Takahiro Sato , Toshiyuki Oka , Shinya Nunoue
发明人： Shigeya KIMURA , Taisuke Sato , Toshihide Ito , Takahiro Sato , Toshiyuki Oka , Shinya Nunoue
IPC分类号： H01L33/40 , H01L33/04
CPC分类号： H01L33/382 , H01L33/20 , H01L33/32 , H01L33/38 , H01L33/42
摘要： According to one embodiment, a semiconductor light emitting device includes: a stacked structural body, a first electrode; and a second electrode. The stacked structural body includes a first semiconductor layer of n-type, a second semiconductor layer of p-type, and a light emitting portion provided therebetween. The first electrode includes a first contact electrode portion. The second electrode includes a second contact electrode portion and a p-side pad electrode. A sheet resistance of the second contact electrode portion is lower than a sheet resistance of the first semiconductor layer. The p-side pad electrode is provided farther inward than a circumscribed rectangle of the first contact electrode portion, and the first contact electrode portion is provided farther outward than a circumscribed rectangle of the p-side pad electrode.
摘要翻译：根据一个实施例，半导体发光器件包括：层叠结构体，第一电极; 和第二电极。层叠结构体包括n型的第一半导体层，p型的第二半导体层和设置在其间的发光部。第一电极包括第一接触电极部分。第二电极包括第二接触电极部分和p侧焊盘电极。第二接触电极部分的薄层电阻低于第一半导体层的薄层电阻。 p侧焊盘电极比第一接触电极部分的外接矩形更靠内侧设置，并且第一接触电极部分比p侧焊盘电极的外接矩形更远地设置。

6. 发明授权

US08525195B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US08525195B2
公开(公告)日：2013-09-03
申请号：US12873662
申请日：2010-09-01
申请人： Hajime Nago , Koichi Tachibana , Toshiki Hikosaka , Shigeya Kimura , Shinya Nunoue
发明人： Hajime Nago , Koichi Tachibana , Toshiki Hikosaka , Shigeya Kimura , Shinya Nunoue
IPC分类号： H01L33/02
CPC分类号： H01L33/12 , B82Y20/00 , H01L33/04 , H01L33/32 , H01S5/34333
摘要： According to one embodiment, a semiconductor light emitting device includes n-type and p-type semiconductor layers, a light emitting portion, a multilayered structural body, and an n-side intermediate layer. The light emitting portion is provided between the semiconductor layers. The light emitting portion includes barrier layers containing GaN, and a well layer provided between the barrier layers. The well layer contains Inx1Ga1-x1N. The body is provided between the n-type semiconductor layer and the light emitting portion. The body includes: first layers containing GaN, and a second layer provided between the first layers. The second layer contains Inx2Ga1-x2N. Second In composition ratio x2 is not less than 0.6 times of first In composition ratio x1 and is lower than the first In composition x1. The intermediate layer is provided between the body and the light emitting portion and includes a third layer containing Aly1Ga1-y1N (0
摘要翻译：根据一个实施例，半导体发光器件包括n型和p型半导体层，发光部分，多层结构体和n侧中间层。发光部分设置在半导体层之间。发光部分包括含有GaN的阻挡层，以及设置在阻挡层之间的阱层。阱层包含Inx1Ga1-x1N。本体设置在n型半导体层和发光部之间。主体包括：包含GaN的第一层，以及设置在第一层之间的第二层。第二层包含Inx2Ga1-x2N。第二组成比x2不小于第一In组成比x1的0.6倍，并且低于第一In组成x1。中间层设置在主体和发光部分之间，并且包括含有Aly1Ga1-y1N（0

7. 发明申请

US20120286284A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND WAFER 有权
标题翻译：半导体发光器件和散热器
公开(公告)号：US20120286284A1
公开(公告)日：2012-11-15
申请号：US13206700
申请日：2011-08-10
申请人： Koichi TACHIBANA , Shigeya Kimura , Hajime Nago , Shinya Nunoue
发明人： Koichi TACHIBANA , Shigeya Kimura , Hajime Nago , Shinya Nunoue
IPC分类号： H01L33/32
CPC分类号： H01L33/12 , B82Y20/00 , H01L33/007 , H01L33/025 , H01L33/06 , H01L33/08 , H01L33/20 , H01L33/22 , H01L33/32 , H01S5/3407 , H01S5/34333 , H01S2301/173 , H01S2304/04 , H01S2304/12
摘要： According to one embodiment, a semiconductor light emitting device includes: a foundation layer, a first semiconductor layer, a light emitting part, and a second semiconductor layer. The foundation layer includes a nitride semiconductor. The foundation layer has a dislocation density not more than 5×108 cm−2. The first semiconductor layer of a first conductivity type is provided on the foundation layer and includes a nitride semiconductor. The light emitting part is provided on the first semiconductor layer. The light emitting part includes: a plurality of barrier layers; and a well layer provided between the barrier layers. The well layer has a bandgap energy smaller than a bandgap energy of the barrier layers and has a thickness larger than a thickness of the barrier layers. The second semiconductor layer of a second conductivity type different from the first conductivity type, is provided on the light emitting part and includes a nitride semiconductor.
摘要翻译：根据一个实施例，半导体发光器件包括：基底层，第一半导体层，发光部分和第二半导体层。基础层包括氮化物半导体。基础层的位错密度不大于5×108cm-2。第一导电类型的第一半导体层设置在基底层上并且包括氮化物半导体。发光部分设置在第一半导体层上。发光部包括：多个阻挡层; 以及设置在阻挡层之间的阱层。阱层具有小于阻挡层的带隙能量的带隙能量，并且具有比阻挡层的厚度大的厚度。具有不同于第一导电类型的第二导电类型的第二半导体层设置在发光部分上并且包括氮化物半导体。

8. 发明授权

US09048362B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US09048362B2
公开(公告)日：2015-06-02
申请号：US13405565
申请日：2012-02-27
申请人： Shigeya Kimura , Yoshiyuki Harada , Hajime Nago , Koichi Tachibana , Shinya Nunoue
发明人： Shigeya Kimura , Yoshiyuki Harada , Hajime Nago , Koichi Tachibana , Shinya Nunoue
IPC分类号： H01L33/00 , H01L33/06 , H01L33/32 , B82Y20/00 , H01S5/343 , H01S5/34
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/12 , H01L33/32 , H01S5/3408 , H01S5/34333
摘要： According to one embodiment, a semiconductor light emitting device includes n-type and p-type semiconductor layers containing a nitride semiconductor and a light emitting layer. The emitting layer includes a barrier layer containing III group elements, and a well layer stacked with the barrier layer and containing III group elements. The barrier layer is divided into a first portion on an n-type semiconductor layer side and a second portion on a p-type semiconductor layer side, an In composition ratio in the III group elements of the second portion is lower than that of the first portion. The well layer is divided into a third portion on an n-type semiconductor layer side and a fourth portion on a p-type semiconductor layer side, an In composition ratio in the III group elements of the fourth portion is higher than that of the third portion.
摘要翻译：根据一个实施例，半导体发光器件包括含有氮化物半导体和发光层的n型和p型半导体层。发光层包括含有III族元素的阻挡层，以及与阻挡层堆叠并含有III族元素的阱层。阻挡层被分为n型半导体层侧的第一部分和p型半导体层侧的第二部分，第二部分的III族元素中的In组成比低于第一部分一部分。阱层被分为n型半导体层侧的第三部分和p型半导体层侧的第四部分，第四部分的III族元素中的In组成比高于第三部分的第三部分一部分。

9. 发明授权

US08895956B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US08895956B2
公开(公告)日：2014-11-25
申请号：US13218827
申请日：2011-08-26
申请人： Shigeya Kimura , Koichi Tachibana , Hajime Nago , Shinya Nunoue
发明人： Shigeya Kimura , Koichi Tachibana , Hajime Nago , Shinya Nunoue
IPC分类号： H01L33/04 , H01L33/32 , H01L33/06
CPC分类号： H01L33/06 , H01L33/32
摘要： According to one embodiment, a semiconductor light emitting device includes an n-type first semiconductor layer, a p-type second semiconductor layer and a light emitting layer. The light emitting layer is provided between the first and second semiconductor layers, and includes a plurality of barrier layers including a nitride semiconductor and a well layer provided between the barrier layers and including a nitride semiconductor containing In. The barrier layers and the well layer are stacked in a first direction from the second semiconductor layer toward the first semiconductor layer. The well layer has a p-side interface part and an n-side interface part. Each of the p-side and the n-side interface part include an interface with one of the barrier layers. A variation in a concentration of In in a surface perpendicular to the first direction of the p-side interface part is not more than that of the n-side interface part.
摘要翻译：根据一个实施例，半导体发光器件包括n型第一半导体层，p型第二半导体层和发光层。发光层设置在第一和第二半导体层之间，并且包括多个阻挡层，包括氮化物半导体和设置在阻挡层之间的阱层，并且包括含有In的氮化物半导体。阻挡层和阱层从第二半导体层向第一半导体层沿第一方向堆叠。阱层具有p侧接口部和n侧接口部。 p侧和n侧接口部分中的每一个包括与阻挡层中的一个的界面。在垂直于p侧接口部分的第一方向的表面中的In浓度的变化不大于n侧接口部分的浓度变化。

10. 发明授权

US08674338B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US08674338B2
公开(公告)日：2014-03-18
申请号：US12871285
申请日：2010-08-30
申请人： Koichi Tachibana , Toshiki Hikosaka , Shigeya Kimura , Hajime Nago , Shinya Nunoue
发明人： Koichi Tachibana , Toshiki Hikosaka , Shigeya Kimura , Hajime Nago , Shinya Nunoue
IPC分类号： H01L29/06 , H01L31/00
CPC分类号： H01L33/06 , H01L33/32 , H01L33/325
摘要： According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting portion. The light emitting portion is provided between the semiconductor layers and includes barrier layers and well layers alternately stacked. An n-side end well layer which is closest to the n-type semiconductor layer contains InwnGa1-wnN and has a layer thickness twn. An n-side end barrier layer which is closest to the n-type semiconductor layer contains InbnGa1-bnN and has a layer thickness tbn. A p-side end well layer which is closest to the p-type semiconductor layer contains InwpGa1-wpN and has a layer thickness twp. A p-side end barrier layer which is closest to the p-type semiconductor contains InbpGa1-bpN and has a layer thickness tbp. A value of (wp×twp+bp×tbp)/(twp+tbp) is higher than (wn×twn+bn×tbn)/(twn+tbn) and is not higher than 5 times (wn×twn+bn×tbn)/(twn+tbn).
摘要翻译：根据一个实施例，半导体发光器件包括n型半导体层，p型半导体层和发光部分。发光部分设置在半导体层之间，并且包括交替堆叠的势垒层和阱层。最靠近n型半导体层的n侧端阱层包含InwnGa1-wnN并具有层厚度twn。最靠近n型半导体层的n侧端势垒层包含InbnGa1-bnN并具有层厚度tbn。最靠近p型半导体层的p侧端阱层包含InwpGa1-wpN，并具有层厚度twp。最靠近p型半导体的p侧端势垒层包含InbpGa1-bpN，并具有层厚度tbp。（wp×twp + bp×tbp）/（twp + tbp）的值高于（wn×twn + bn×tbn）/（twn + tbn），并且不高于5次（wn×twn + bn× tbn）/（twn + tbn）。

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