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1. 发明申请

WO2008019336A2 GENERALIZED KINEMATICS SYSTEM 审中-公开
标题翻译：通用动力系统
公开(公告)号：WO2008019336A2
公开(公告)日：2008-02-14
申请号：PCT/US2007/075274
申请日：2007-08-06
申请人： HURCO COMPANIES, INC. , GRAY, Paul, J. , LU, Jiang , LANKALAPALLI, Kishore
发明人： GRAY, Paul, J. , LU, Jiang , LANKALAPALLI, Kishore
IPC分类号： G05B19/4069
CPC分类号： G05B19/4069 , G05B19/4086 , G05B2219/34202 , G05B2219/35346 , G05B2219/36252 , G05B2219/36276
摘要： The present disclosure includes a generalized kinematics library (210) which may be used to control the motion of a machine tool system (100) and to process data for other applications, such as simulation graphics (245). Methods are disclosed to interpolate the movement of various axes of a machine tool system (100) through a machine singularity point (490).
摘要翻译：本公开包括广义运动学库（210），其可以用于控制机床系统（100）的运动并处理诸如模拟图形（245）的其他应用的数据。公开了用于内插机床系统（100）的各个轴线通过机器奇异点（490）的运动的方法。

2. 发明授权

EP2057516B1 GENERALIZED KINEMATICS SYSTEM 有权
公开(公告)号：EP2057516B1
公开(公告)日：2018-07-25
申请号：EP07813808.8
申请日：2007-08-06
申请人： HURCO COMPANIES INC.
发明人： GRAY, Paul, J. , LU, Jiang , LANKALAPALLI, Kishore
IPC分类号： G05B19/4069
CPC分类号： G05B19/4069 , G05B19/4086 , G05B2219/34202 , G05B2219/35346 , G05B2219/36252 , G05B2219/36276
摘要： The present disclosure includes a generalized kinematics library which may be used to control the motion of a machine tool system and to process data for other applications, such as simulation graphics. Methods are disclosed to interpolate the movement of various axes of a machine tool system through a machine singularity point.

3. 发明公开

EP2057516A2 GENERALIZED KINEMATICS SYSTEM 有权
标题翻译：一般动力学系统
公开(公告)号：EP2057516A2
公开(公告)日：2009-05-13
申请号：EP07813808.8
申请日：2007-08-06
申请人： HURCO COMPANIES INC.
发明人： GRAY, Paul, J. , LU, Jiang , LANKALAPALLI, Kishore
IPC分类号： G05B19/4069
CPC分类号： G05B19/4069 , G05B19/4086 , G05B2219/34202 , G05B2219/35346 , G05B2219/36252 , G05B2219/36276
摘要： The present disclosure includes a generalized kinematics library which may be used to control the motion of a machine tool system and to process data for other applications, such as simulation graphics. Methods are disclosed to interpolate the movement of various axes of a machine tool system through a machine singularity point.
摘要翻译：本公开包括可用于控制机床系统的运动并处理诸如模拟图形之类的其他应用的数据的广义运动学库。公开了通过机器奇异点来插入机床系统的各种轴线的运动的方法。

4. 发明申请

WO2010132172A2 METHOD FOR TUNING A DEPOSITION RATE DURING AN ATOMIC LAYER DEPOSITION PROCESS 审中-公开
标题翻译：在原子层沉积过程中调节沉积速率的方法
公开(公告)号：WO2010132172A2
公开(公告)日：2010-11-18
申请号：PCT/US2010/031491
申请日：2010-04-16
申请人： APPLIED MATERIALS, INC. , MA, Paul, F. , AUBUCHON, Joseph, F. , LU, Jiang , CHANG, Mei
发明人： MA, Paul, F. , AUBUCHON, Joseph, F. , LU, Jiang , CHANG, Mei
IPC分类号： H01L21/205 , C23C16/455
CPC分类号： H01L21/76841 , C23C16/45534 , C23C16/52
摘要： Embodiments of the invention provide methods for depositing a material on a substrate within a processing chamber during a vapor deposition process, such as an atomic layer deposition (ALD) process. In one embodiment, a method is provided which includes sequentially exposing the substrate to a first precursor gas and at least a second precursor gas while depositing a material on the substrate during the ALD process, and continuously or periodically exposing the substrate to a treatment gas prior to and/or during the ALD process. The deposition rate of the material being deposited may be controlled by varying the amount of treatment gas exposed to the substrate. In one example, tantalum nitride is deposited on the substrate and the alkylamino metal precursor gas contains a tantalum precursor, such as pentakis(dimethylamino) tantalum (PDMAT), the second precursor gas contains a nitrogen precursor, such as ammonia, and the treatment gas contains dimethylamine (DMA).
摘要翻译：本发明的实施例提供了在诸如原子层沉积（ALD）工艺的气相沉积工艺期间将材料沉积在处理室内的衬底上的方法。在一个实施例中，提供了一种方法，其包括在ALD工艺期间将衬底沉积到衬底上的同时将衬底依次暴露于第一前体气体和至少第二前体气体，并且连续地或周期地将衬底暴露于处理气体之前到和/或在ALD过程期间。可以通过改变暴露于衬底的处理气体的量来控制被沉积的材料的沉积速率。在一个实例中，氮化钽沉积在衬底上，并且烷基氨基金属前体气体包含钽前体，例如五（二甲基氨基）钽（PDMAT）），第二前体气体含有氮前体如氨，并且处理气体含有二甲胺（DMA）。

5. 发明申请

WO2013033428A2 IN SITU PROCESS KIT CLEAN FOR MOCVD CHAMBERS 审中-公开
标题翻译：在MOCVD CHAMBERS的现场工艺套件清洁
公开(公告)号：WO2013033428A2
公开(公告)日：2013-03-07
申请号：PCT/US2012/053186
申请日：2012-08-30
申请人： APPLIED MATERIALS, INC. , LU, Jiang , CHUNG, Hua , WANG, Yan , SHEN, Kuan Chien Keris , DONG, Xizi , DUBOUST, Alain , HSU, Wei-Yung , GRIFFIN, Kevin S. , OLGADO, Donald J.K.
发明人： LU, Jiang , CHUNG, Hua , WANG, Yan , SHEN, Kuan Chien Keris , DONG, Xizi , DUBOUST, Alain , HSU, Wei-Yung , GRIFFIN, Kevin S. , OLGADO, Donald J.K.
IPC分类号： H01L21/205 , H01L21/302 , H01L21/02
CPC分类号： H01L21/67115 , C23C16/4405
摘要： Embodiments of the invention include methods of in situ cleaning of deposited materials from the surfaces of processing chambers, e.g., MOCVD processing chambers. The cleaning process increases the time between preventative maintenance cleanings and reduces chamber down-time by targeting the removal of the layers deposited on the interior surfaces of the chamber body and/or liner, as well as the process kit components. The cleaning process occurs while shielding the showerhead and a carrier plate from at least some of the cleaning gases used during the cleaning process. To prevent chemical attack of the layers already deposited on the surface of the showerhead, and to prevent poisoning of the layers deposited after performing the cleaning process, the showerhead and the carrier plate are shielded from the cleaning gas by delivering an inert gas through the showerhead and across the surface of the carrier plate and/or cleaning plate during the cleaning.
摘要翻译：本发明的实施例包括从处理室的表面例如MOCVD处理室原位清洁沉积材料的方法。清洁过程增加了预防性维护清洁之间的时间，并且通过靶向沉积在室主体和/或衬套的内表面上的层以及处理套件组件来去除沉积物来减少室停机时间。清洁过程发生在屏蔽淋浴喷头和承载板与清洁过程中使用的至少一些清洁气体时。为了防止已经沉积在喷头表面上的层的化学侵蚀，并且为了防止在执行清洁处理之后沉积的层中毒，喷淋头和承载板通过将惰性气体通过喷头并且在清洁期间穿过承载板和/或清洁板的表面。

6. 发明申请

WO2012173824A3 ENHANCED MAGNESIUM INCORPORATION INTO GALLIUM NITRIDE FILMS THROUGH HIGH PRESSURE OR ALD-TYPE PROCESSING 审中-公开
公开(公告)号：WO2012173824A3
公开(公告)日：2012-12-20
申请号：PCT/US2012/040948
申请日：2012-06-05
申请人： APPLIED MATERIALS, INC. , SU, Jie , LU, Jiang , CHUNG, Hua , HSU, Wei-Yung , BOUR, David
发明人： SU, Jie , LU, Jiang , CHUNG, Hua , HSU, Wei-Yung , BOUR, David
IPC分类号： H01L21/318 , H01L21/205
摘要： Enhanced magnesium incorporation into gallium nitride films through high pressure or ALD-type processing is described. In an example, a method of fabricating a group ΙII-nitride film includes flowing a group IIΙ precursor, a nitrogen precursor, and a p-type dopant precursor into a reaction chamber having a substrate therein. A p- type doped group ΙII-nitride layer is formed in the reaction chamber, above the substrate, while a total pressure in the reaction chamber is approximately in the range of 300 - 760 Torr.

7. 发明申请

WO2010025068A2 COBALT DEPOSITION ON BARRIER SURFACES 审中-公开
标题翻译：在屏障表面的钴沉积
公开(公告)号：WO2010025068A2
公开(公告)日：2010-03-04
申请号：PCT/US2009/054307
申请日：2009-08-19
申请人： APPLIED MATERIALS, INC. , LU, Jiang , HA, Hyoung-Chan , MA, Paul , GANGULI, Seshadri , AUBUCHON, Joseph, F. , YU, Sang Ho , NARASIMHAN, Murali
发明人： LU, Jiang , HA, Hyoung-Chan , MA, Paul , GANGULI, Seshadri , AUBUCHON, Joseph, F. , YU, Sang Ho , NARASIMHAN, Murali
IPC分类号： H01L21/28 , H01L21/205
CPC分类号： H01L21/76871 , C23C16/16 , C23C16/18 , C23C16/42 , C23C16/56 , H01L21/28556 , H01L21/28562 , H01L21/28568 , H01L21/76846 , H01L21/76862 , H01L21/76864 , H01L21/76873
摘要： Embodiments of the invention provide processes for depositing a cobalt layer on a barrier layer and subsequently depositing a conductive material, such as copper or a copper alloy, thereon. In one embodiment, a method for depositing materials on a substrate surface is provided which includes forming a barrier layer on a substrate, exposing the substrate to dicobalt hexacarbonyl butylacetylene (CCTBA) and hydrogen to form a cobalt layer on the barrier layer during a vapor deposition process (e.g., CVD or ALD), and depositing a conductive material over the cobalt layer. In some examples, the barrier layer and/or the cobalt layer may be exposed to a gas or a reagent during a treatment process, such as a thermal process, an in situ plasma process, or a remote plasma process.
摘要翻译：本发明的实施例提供用于在阻挡层上沉积钴层并随后在其上沉积诸如铜或铜合金的导电材料的工艺。在一个实施例中，提供了用于在衬底表面上沉积材料的方法，其包括在衬底上形成阻挡层，在气相沉积期间将衬底暴露于六羰基丁炔二钴（CCTBA）和氢以在阻挡层上形成钴层工艺（例如，CVD或ALD）以及在钴层上沉积导电材料。在一些实例中，阻挡层和/或钴层可在处理过程（诸如热过程，原位等离子体过程或远程等离子体过程）期间暴露于气体或试剂。

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