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    • 3. 发明专利
    • ALIGNMENT METHOD FOR REDUCTION PROJECTION TYPE ALIGNER
    • DE3573864D1
    • 1989-11-23
    • DE3573864
    • 1985-11-12
    • HITACHI LTD
    • NAKATA TOSHIHIKOSHIBA MASATAKAOSHIDA YOSHITADAUTO SACHIOYOSHIZAKI ATSUHIRO
    • G03F9/00H01L21/68G03B27/53G02B27/00
    • An alignment method for reduction projection type aligner is disclosed in which the rough detection of reticle position in the reticle alignment process at the time of mounting a reticle (1) and the fine detection of reticle position in the wafer alignment for the alignment between a wafer (3) and the reticle (1) are performed automatically by the same reticle alignment pattern (18) and the same optical alignment detection system (38). A plurality of one- or two-dimensional Fresnel zone plates (19, 20) having different shapes of diffraction patterns formed outside of a reticle circuit pattern (16) and arranged at a position outward of the entrance pupil (2') of the reduction projection lens (2) are used as a a reticle alignment pattern (18) to detect the absolute position of the reticle (1). The detection field of view of the optical alignment detection system (38) is thus effectively widened to make pattern detection possible with high magnification for an improved detection accuracy. The same reticle alignment pattern (18) and the same optical alignment detection system (38) are used for rough detection of reticle position in reticle alignment and fine detection of reti- cie position in wafer alignment. In the optical alignment detection system (38), on the other hand, the image position of the diffraction pattern (39a to 39c) from the reticle alignment pattern (18) and the image position of the wafer alignment pattern (14) are located at the same distance from the recticle surface.
    • 8. 发明专利
    • STEPPER
    • JPH06275494A
    • 1994-09-30
    • JP6205993
    • 1993-03-22
    • HITACHI LTD
    • YOSHIZAKI ATSUHIROSAITO NAOTAKE
    • G03F7/20H01L21/027H01L21/30
    • PURPOSE:To enable miniaturizing a stepper by using a low-pressure chamber for reduced error due to fluctuation of atmospheric temperature, moisture and pressure, accompanied by less dust. CONSTITUTION:A reticule 2, its supporting frame 3 and an incidence part of a reduction lens assembly 4 are enclosed in the first low-pressure chamber 13, and an out-going part of the reduction lens assembly 4, a wafer 5 and its transportation X-Y stage 6 are enclosed in the second low-pressure chamber 14. A wafer pattern detection system 10 and reticule pattern detection system 12 are assigned in the first low-pressure chamber 13, and a laser length measuring device 11 is assigned in the second low-pressure chamber 14. On the outside of the first and second low-pressure chambers 13 and 14, a lens temperature adjustment system 20 is assigned around an outside cylinder part of the reduction lens assembly 4. At the reduction lens assembly 4, an air path for communication between the first and second low-pressure chambers 13 and 14 and the space between lens elements is formed.
    • 10. 发明专利
    • Alignment system
    • 对齐系统
    • JPS61116836A
    • 1986-06-04
    • JP23742084
    • 1984-11-13
    • Hitachi Ltd
    • NAKADA TOSHIHIKOSHIBA MASATAKAOSHIDA YOSHISADAUTO YUKIOYOSHIZAKI ATSUHIRO
    • H01L21/30G03F9/00H01L21/027
    • G03F9/7076
    • PURPOSE:To easily realize alignment by executing the coarse detection for loading reticle to the fixed position and fine detection for alignment with wafer through same reticle alignment pattern and the same detection optical system. CONSTITUTION:The alignment pattern groups 18a-18e of reticle 1 have different number of fresnel belt plates 19a-19e, its diffraction pattern is focused to a movable slit 9 of optical system 38. Meanwhile, the reflected light of mirror pattern 17 is reflected by the alignment pattern, focused to the slit 9 and is detected by photosensor. In this case, when the sight (dotted line) of optical system 38 exists in the pattern 18a (target value) in the same position as the mirror pattern 17, the diffracted pattern image 39c on the slit 9 becomes linear and the signal 40c can be obtained by the slit scanning. The patterns 18a-18e are set independently within the detection sight and the relation between a number of fresnel plate 19 and center interval of pattern group 18 is previously detected. Thereby, the absolute position of reticle 1 can be detected from a number of linear diffraction patterns 39 and corrected distance from the position of pattern 18 to the target position can also be detected.
    • 目的:通过执行粗调检测,通过相同的掩模版校准图案和相同的检测光学系统,通过执行将掩模版加载到固定位置的微细检测和与晶片对准的精细检测来容易地实现对准。 构图:标线片1的取向图案组18a-18e具有不同数量的菲涅耳带板19a-19e,其衍射图案被聚焦到光学系统38的可移动狭缝9上。同时,反射镜图案17的反射光被 对准图案被聚焦到狭缝9并被光电传感器检测。 在这种情况下,当与镜面图案17相同位置的光学系统38的视线(虚线)存在于图案18a(目标值)时,狭缝9上的衍射图案图像39c变为线性的,信号40c可以 通过狭缝扫描获得。 图案18a-18e被独立地设置在检测视线内,并且先前检测了菲涅尔板19的数量与图案组18的中心间隔之间的关系。 因此,可以从多个线性衍射图案39检测标线片1的绝对位置,并且还可以检测从图案18的位置到目标位置的校正距离。