会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明专利
    • DE69032005T2
    • 1998-09-17
    • DE69032005
    • 1990-10-10
    • HITACHI LTD
    • NAKAYAMA YASHUHIKOSHIBA MASATAKAKOMORIYA SUSUMU
    • G03F7/20
    • An exposure method for irradiating a substrate, such as a semiconductor substrate, coated with a photoresist with light to measure the variation in an optical property, such as reflectivity, refractive index, transmittance, polarization property, spectral transmittance, etc., of the photoresist with time, determining an optimum photoresist coating condition, an optimum photoresist coating condition, an optimum developing condition or an optimum exposure energy quantity, and forming a photoresist pattern according to the optimum condition, a system for the exposure method, a controlling method of forming a photoresist film by use of the exposure method, and a system for the controlling method, are useful for stabilization of the formation or treatment of the photoresist film, and ensures less variations in the pattern size. Furthermore, even in the case of a thin film other than a photoresist film, the formation or treatment of the thin film can be stabilized by measuring the optical property before and during or after the formation of the thin film and using the measurement results to control the condition for forming the thin film, the etching condition or the coating condition.
    • 3. 发明专利
    • DE3485022D1
    • 1991-10-10
    • DE3485022
    • 1984-12-20
    • HITACHI LTD
    • OSHIDA YOSHITADASHIBA MASATAKANAKATA TOSHIHIKOKOIZUMI MITSUYOSHINAKASHIMA NAOTO
    • H01L21/30G03F9/00G03B41/00
    • An exposure apparatus comprises a light source (4), a mask plate (1) having an exposure pattern area section (11) and an alignment/reflection area section (30; 60), a projection lens (3), a movable stage (7) for holding a workpiece (2) having a workpiece alignment mark (22,22'), an alignment control (5, 80) and a driver for the movable stage. Before the exposure pattern area section (11) is illuminated by the light source (4) to be projected through the projection lens (3) onto the workpiece (2), the workpiece is properly aligned with the mask. Alignment between the mask plate and the workpiece is performed by the effective use of the alignment/reflection area section specifically arranged and having a specific structure. The alignment/reflection area section (30; 60) is on that surface of the mask plate (1) which does not face the light source (4) and includes a reflection portion for conducting light from another light source (503; 521-524; 51"; 90) to the workpiece and conducting light scattered from the workpiece and passing through the projection lens to the alignment control and a mask alignment mark portion for providing, when illuminated, an image of the mask alignment mark portion to the alignment control so that it detects the positional relation between the mask alignment mark portion and the workpiece alignment mark and produces a control signal for achieving alignment between the mask plate and the workpiece.
    • 7. 发明专利
    • ALIGNMENT METHOD FOR REDUCTION PROJECTION TYPE ALIGNER
    • DE3573864D1
    • 1989-11-23
    • DE3573864
    • 1985-11-12
    • HITACHI LTD
    • NAKATA TOSHIHIKOSHIBA MASATAKAOSHIDA YOSHITADAUTO SACHIOYOSHIZAKI ATSUHIRO
    • G03F9/00H01L21/68G03B27/53G02B27/00
    • An alignment method for reduction projection type aligner is disclosed in which the rough detection of reticle position in the reticle alignment process at the time of mounting a reticle (1) and the fine detection of reticle position in the wafer alignment for the alignment between a wafer (3) and the reticle (1) are performed automatically by the same reticle alignment pattern (18) and the same optical alignment detection system (38). A plurality of one- or two-dimensional Fresnel zone plates (19, 20) having different shapes of diffraction patterns formed outside of a reticle circuit pattern (16) and arranged at a position outward of the entrance pupil (2') of the reduction projection lens (2) are used as a a reticle alignment pattern (18) to detect the absolute position of the reticle (1). The detection field of view of the optical alignment detection system (38) is thus effectively widened to make pattern detection possible with high magnification for an improved detection accuracy. The same reticle alignment pattern (18) and the same optical alignment detection system (38) are used for rough detection of reticle position in reticle alignment and fine detection of reti- cie position in wafer alignment. In the optical alignment detection system (38), on the other hand, the image position of the diffraction pattern (39a to 39c) from the reticle alignment pattern (18) and the image position of the wafer alignment pattern (14) are located at the same distance from the recticle surface.