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1. 发明专利

JPH10178081A METHOD AND SYSTEM FOR FABRICATING SEMICONDUCTOR 失效
公开(公告)号：JPH10178081A
公开(公告)日：1998-06-30
申请号：JP33782696
申请日：1996-12-18
申请人： HITACHI LTD
发明人： SAITO YOSHIO , TSUDA MASAYUKI , NITTA TAKEHISA
IPC分类号： H01L21/302 , B65G49/07 , H01L21/3065 , H01L21/31 , H01L21/324 , H01L21/677 , H01L21/68
摘要： PROBLEM TO BE SOLVED: To suppress contamination of semiconductor wafer by sustaining a high cleanliness enclosed transferring space of inert atmosphere. SOLUTION: A semiconductor wafer W is transferred to a reaction chamber 3 while being levitated by ejecting inert gas through nozzles 6 arranged along a transfer passage 2. At the time of processing the semiconductor wafer W in the reaction chamber 3, the semiconductor wafer W is levitated stationarily by ejecting a processing gas, e.g. oxygen gas, through processing gas nozzles 8 and followed by noncontact deposition of an oxide. Subsequently, the inert gas is fed through the nozzles 6 and the semiconductor wafer W is transferred to next process while being levitated.

2. 发明专利

JPH0269977A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND METHOD OF FORMING THE SAME 失效
公开(公告)号：JPH0269977A
公开(公告)日：1990-03-08
申请号：JP22169288
申请日：1988-09-05
申请人： HITACHI LTD
发明人： OWADA NOBUO , NITTA TAKEHISA , KOBAYASHI TORU , AKIMORI HIROYUKI , OOGAYA KAORU , KAWAJI MOTONORI
IPC分类号： H01L21/3205 , H01L21/82 , H01L23/52 , H01L27/118
摘要： PURPOSE:To reduce short circuit and improve the electric reliability by forming third layer wiring just on the stepped parts formed by connection of first layer wiring with second layer wiring. CONSTITUTION:A bipolar Tr is separated from other areas with an element separation area comprising a semiconductor substrate 21, element separation insulating films 26, and p type semiconductor areas. The bases of the element separation insulating films 26 reach the principal surface of the substrate 21. First layer signal wiring 38 is formed in direction X on layer insulating films 27, 32, and 36, second layer signal wiring 41 is formed thereon in direction Y through a layer insulating film 39, and third layer signal wiring 44 is formed thereon in direction X through a layer insulating film 42. The wiring 41 is connected to the wiring 38 through contact holes 40 made in the film 39 and the wiring 44 is connected to the wiring 41 through contact holes 43 made in the film 42. The wiring 44 exists just on the stepped parts produced around the contact holes 40 by the connection of the wiring 38 with the wiring 41.

3. 发明专利

JPH0689890A PROCESSING METHOD AND ITS DEVICE 失效
公开(公告)号：JPH0689890A
公开(公告)日：1994-03-29
申请号：JP24035392
申请日：1992-09-09
申请人： HITACHI LTD
发明人： SAITO YOSHIO , MIZUKAMI KOICHIRO , TOMIOKA HIDEKI , NITTA TAKEHISA
IPC分类号： B08B3/04 , H01L21/304
摘要： PURPOSE:To obtain processing technology capable of preventing accurately a change of contamination or atmosphere within a closed processing chamber due to a reverse flow such as the atmosphere, etc., at discharging of liquid or an air. CONSTITUTION:A processing chamber 1 performs a desired processing for inside matter to be processed by a processing fluid such as chemical liquid, pure water, gas, or the like supplied from a processing fluid supply pipe 11, and a buffer tank 2 is provided in the of a discharge pipe 12 connecting to the processing chamber 1 and is connected with an inactive gas supply pipe 13 supplying inactive gas and a vacuum generator 3 performing its decompression operations. The vacuum generator 3 generates negative pressure by a principle of an aspirator using an inactive gas flow to be jetted and supplied from an operating fluid supply pipe 16 as an operating fluid. The discharge of waste liquid after processing completion in the processing chamber 1 is compulsorily performed by setting the buffer tank 2 at negative pressure.

4. 发明专利

JPH034561A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 失效
公开(公告)号：JPH034561A
公开(公告)日：1991-01-10
申请号：JP13946089
申请日：1989-05-31
申请人： HITACHI LTD
发明人： OWADA NOBUO , AKIMORI HIROYUKI , NITTA TAKEHISA , KOBAYASHI TORU , SASABE SHUNJI , KAWAJI MOTONORI , KASAHARA OSAMU
IPC分类号： H01L21/3205 , G06F17/50 , G11C11/401 , H01L21/82 , H01L23/52 , H01L27/118
摘要： PURPOSE:To shorten the production time of a circuit device of this design by a method wherein signal wirings of an X direction are increased in number at a third wiring taking advantage of spaces between basic cells and the surfaces of the basic cells and other signal wirings of a Y direction are increased in number at a second wiring, whereby a circuit is enhanced in mounting rate. CONSTITUTION:A first signal wiring 38 is formed on a logic LSI semiconductor wafer on which basic cells have been arranged using a formed semiconductor manufacturing mask, and then an interlaminar insulating film 39, a connection hole 40, a second signal wire 41, an interlaminar insulating film 42, a connection hole 43, a third signal wiring 44, an interlaminar insulating film 45, a fourth signal wiring 46, and a passivation film 47 are successively formed to constitute a logic LSI. On the other hand, signal wirings of an X direction are increased in number at the third signal wiring 44 by making the wirings small in pitch basing on the X direction wiring information of an X-Y grating wiring channel region, and furthermore the second signal wiring 41 of a Y direction is increased in arrangement number.

5. 发明专利

JPS6443384A STEAM WASHING METHOD AND WASHER 失效
公开(公告)号：JPS6443384A
公开(公告)日：1989-02-15
申请号：JP19979687
申请日：1987-08-12
申请人： HITACHI LTD
发明人： KUROKAWA HIDEAKI , EBARA KATSUYA , TAKAHASHI SANKICHI , MATSUZAKI HARUMI , YODA HIROAKI , NITTA TAKEHISA
IPC分类号： B08B3/08 , C23G5/04 , G11B3/58 , G11B5/84 , H01L21/304
摘要： PURPOSE: To make the remaining of impurities on a surface less than in the conventional method for immersing materials to be treated into ultra-pure water or the like by heating a washing liquid to evaporate, passing mists carried over in the vapor thereof at this time through a porous membrane to remove the mists, then bringing the vapor into contact with the materials to be treated. CONSTITUTION: The mists carried over in the vapor are removed by using the porous membrane 101 at the time of washing the materials 107 to be treated by using the vapor of the washing liquid and, thereafter, the vapor is brought into contact with the surfaces of the materials to be treated to condensate the vapor. Water or an org. solvent insoluble in the water or the like is used as the washing liquid described above. The materials to be treated are various kinds of optical parts and electronic parts inclusive of semiconductor wafers, optical disks or magnetic disks or jigs for their production. Further, the ultra- pure water is preferably used as the water used for vapor washing of the semiconductor wafers. Consequently, the remaining of the impurities on the surface of the materials to be treated is made less than in the conventional method of immersing the materials to be treated into the ultra-pure water and vapor washing method.

6. 发明专利

JPS6420625A SURFACE TREATMENT APPARATUS 失效
公开(公告)号：JPS6420625A
公开(公告)日：1989-01-24
申请号：JP17676987
申请日：1987-07-15
申请人： HITACHI LTD
发明人： SAITO YOSHIO , NITTA TAKEHISA
IPC分类号： B08B3/08 , H01L21/304
摘要： PURPOSE:To prevent recontamination or natural drying on the way of a process and to highly clean the surface of a material to be treated by individually supplying fluid vapors to be treated from a plurality of fluid treatment sources through filters and the like to a treatment chamber. CONSTITUTION:Chemical vapor, steam, solvent vapor generated in vapor generation layers 14-16 are individually supplied through vapor temperature controllers 26-28, valves 29-31 and filters 32-34 as vapors of high purity to a treating chamber 1 to which atmospheric gas is supplied. They are condensed by a heat exchanger 13, and continuously treated sequentially with treating liquid and vapor without exposing the surface of materials 4 to be treated in the chamber 1 with the atmosphere. Thus, a recontamination and a detrimental natural drying is prevented on the way of the step to highly clean the surface of the material to be treated.

7. 发明专利

JPS61150925A LINEAR MOTOR CONVEYOR FOR WAFER 失效
公开(公告)号：JPS61150925A
公开(公告)日：1986-07-09
申请号：JP24748885
申请日：1985-11-05
申请人： HITACHI LTD , HITACHI KIDEN KOGYO KK
发明人： NITTA TAKEHISA , SAITO YOSHIO , FUKUWATARI ICHIRO , WATANABE SEIJU
IPC分类号： H01L21/677 , B65G54/02 , H01L21/67
摘要： PURPOSE:To enable to convey a carrier pallet and wafer thereon in the stable condition free from dust, by driving the pallet with a linear motor, and by floating up the load with compressed air. CONSTITUTION:The conveying route 2 is furnished with the primary side of a linear motor 3, and the reaction plate of the bottom of the carrier pallet 6 is used as the secondary side of the linear motor 3. The magnetic flux of the primary side of the linear motor 3 gives a propelling power to the reaction plate to move the pallet 6 with the wafer on it, in the direction of the arrow. In this case, compressed air is injected through nozzles 1C of the carrier table 1 to keep the pallet 6 in a floating position over the table 1, and conveys the pallet 6 and the wafer along the conveying route 2 in the condition free from dust.

8. 发明专利

JPH08288248A LIQ. CONTACTING MEMBER 失效
公开(公告)号：JPH08288248A
公开(公告)日：1996-11-01
申请号：JP8950295
申请日：1995-04-14
申请人： WATANABE M & CO LTD , HITACHI LTD
发明人： OTAKE MASAHIRO , UMEDA MASARU , TOMIOKA HIDEKI , NITTA TAKEHISA
IPC分类号： H01L21/673 , H01L21/304 , H01L21/68
摘要： PURPOSE: To provide a liq. contacting member having a high resistance to various chemicals and high mechanical strength, characterized in that the elution of an impurity is quite little and never stains a cleaning liq. or cleaned sample. CONSTITUTION: At least the surface making contact with a liq. is composed of a SiC film formed by the chemical vapor deposition method.

9. 发明专利

JPH06340333A CONVEYING DEVICE BY GAS FLOW 失效
公开(公告)号：JPH06340333A
公开(公告)日：1994-12-13
申请号：JP12893393
申请日：1993-05-31
申请人： HITACHI LTD
发明人： ITO HIDEFUMI , SAITO YOSHIO , TANABE YOSHIKAZU , NITTA TAKEHISA
IPC分类号： B65G49/07 , B65G51/03 , B65H5/22 , H01L21/677 , H01L21/68
摘要： PURPOSE:To position a platy body accurately and in short time at a desired stop position by controlling the positioning operation of the platy body relative to a positioning member by a fluid force. CONSTITUTION:When a wafer 2 under floated condition is conveyed from the left side by a wafer floating nozzle 4, it is stopped by a drag force generated by a gas jet from a control nozzle 5b opened in the direction reverse to the conveying direction, and the stoppage under floated condition is maintained by a jet from the wafer floating nozzle 4. In the floated condition, the wafer 2 is rotated by the presence of the orientation flat 2a of the wafer 2. In this case, first a positioning pin 6 is raised from a nozzle plate 3 to around the wafer 2, and the balance of forces caused by the jets from the control nozzle 5a and the control nozzle 5b in the directions reverse to each other is controlled to press the wafer 2 gently against the side surface of the step part 6a of the positioning pin 6 for complete stop.

10. 发明专利

JPH02126634A MANUFACTURE OF SEMICONDUCTOR DEVICE AND MANUFACTURING DEVICE THEREFOR 失效
公开(公告)号：JPH02126634A
公开(公告)日：1990-05-15
申请号：JP28077988
申请日：1988-11-07
申请人： HITACHI LTD , OMI TADAHIRO
发明人： OMI TADAHIRO , SUGIURA JUN , NITTA TAKEHISA , OWADA NOBUO , UDA HIDE
IPC分类号： H01L29/73 , H01L21/26 , H01L21/265 , H01L21/28 , H01L21/331 , H01L29/43 , H01L29/732
摘要： PURPOSE:To prevent effectively occurrences of composite detects in a base region by repeating ion implantation injecting the amount of ions which is less than that of a prescribed amount of the ions as well as short time annealing alternately. CONSTITUTION:After exposing substrates 5 at places where each base region is formed, this device allows pointed ends of each substrate holder 6 to attract the substrates 5 electrostatically and to rotate the substrate holders 6 at a constant rate. B ions generated from the first accelerated ion generating source 3a are injected on the surfaces of the substrates 5. If the holders 6 rotate further, Ge ions are injected on the surfaces of the substrates 5 by another accelerated ion generating source 3b. If rotates further, annealing of the surfaces is performed by rays passing through a filter 4 in front of a radiation heating source 4. Then each substrate 5 moves from the radiation heating source 4 to the ion generating source 3a and when it is moving each substrate is cooled up to the temperature of a stage. Faultless base regions are thus formed by repeating implantation of B and Ge ions into the substrates 5 and annealing alternately.

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