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1. 发明授权

US6417114B2 Method for fabricating semiconductor integrated circuit device 有权
公开(公告)号：US6417114B2
公开(公告)日：2002-07-09
申请号：US75273601
申请日：2001-01-03
申请人： HITACHI LTD
发明人： TANABE YOSHIKAZU , SAKAI SATOSHI , NATSUAKI NOBUYOSHI
IPC分类号： H01L21/00 , H01L21/28 , H01L21/306 , H01L21/31 , H01L21/314 , H01L21/316 , H01L21/336 , H01L21/469 , H01L21/76 , H01L21/8238 , H01L29/423 , H01L29/51 , C23C16/00
CPC分类号： H01L21/31662 , H01L21/02052 , H01L21/02238 , H01L21/02255 , H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L21/28211 , H01L21/3144 , H01L21/31658 , H01L21/67109 , H01L21/67167 , H01L21/67173 , H01L21/67213 , H01L21/67219 , H01L21/823807 , H01L21/823814 , H01L21/823857 , H01L29/42364 , H01L29/518 , Y10S148/023 , Y10S148/116 , Y10S438/935
摘要： A method for fabricating a semiconductor integrated circuit device of the invention comprises feeding oxidation species containing a low concentration of water, which is generated from hydrogen and oxygen by the catalytic action, to the main surface of or in the vicinity of a semiconductor wafer, and forming a thin oxide film serving as a gate insulating film of an MOS transistor and having a thickness of 5 nm or below on the main surface of the semiconductor wafer at an oxide film-growing rate sufficient to ensure fidelity in formation of an oxide film and uniformity in thickness of the oxide film.

2. 发明专利

DE69925648D1 未知
公开(公告)号：DE69925648D1
公开(公告)日：2005-07-14
申请号：DE69925648
申请日：1999-01-06
申请人： FUJIKIN KK , HITACHI LTD
发明人： TANABE YOSHIKAZU , MINAMI YUKIO , KAWADA KOJI , IKEDA NOBUKAZU , MORIMOTO AKIHIRO , HIRAO KEIJI
IPC分类号： B01D53/86 , B01J23/42 , B01D53/46
摘要： Apparatus for treating exhaust gases containing hydrogen from a semiconductor manufacturing line,' chemical plant or the like, which apparatus comprises aspirating means (7,16) for aspirating exhaust gases (G) containing hydrogen from a discharge source of said exhaust gases; mixing means (7,16) for mixing the aspirated exhaust gases with oxygen or air; reacting means (5) for reacting the mixed hydrogen and oxygen or air to form water, which reacting means comprises catalytic means (5h) for generating oxygen and hydrogen free radicals from oxygen and said exhaust gases respectively, which oxygen and hydrogen free radicals react to form water; and condensing means (9) for condensing water formed in the reactor. A second reacting means (6) may be provided for reacting un-reacted hydrogen and oxygen discharged from the first-mentioned reactor means to form water.

3. 发明专利

CA2244688C METHOD FOR GENERATING MOISTURE, REACTOR FOR GENERATING MOISTURE, METHOD FOR CONTROLLING TEMPERATURE OF REACTOR FOR GENERATING MOISTURE, AND METHOD FOR FORMING PLATINUM-COATED CATALYST LAYER 未知
公开(公告)号：CA2244688C
公开(公告)日：2003-02-18
申请号：CA2244688
申请日：1997-01-27
申请人： FUJIKIN KK , HITACHI LTD , OHMI TADAHIRO
发明人： MOROKOSHI HIROSHI , MORIMOTO AKIHIRO , TANABE YOSHIKAZU , NITTA TAKAHISA , KAWADA KOJI , HIRAO KEIJI , IKEDA NOBUKAZU , MINAMI YUKIO , OHMI TADAHIRO
IPC分类号： C01B5/00 , G05D23/00 , C23C14/16
摘要： The invention further reduces a size and cost of a reactor for generati ng water from oxygen and hydrogen, provides high-purity water in an amount necessary for practical use safely, stably and continuously, and allows a platinuin- coated catalyst layer formed on an inner wall of a reactor body to maintain high catalytic activity over a long period of time. Specifically, the reactor comprises a body made of a heat-resistant material and having an inlet and an outlet for water/moisture gas, has a gas-diffusing member provided in an internal space of the body, and has a platinum coating on an internal wall surface of the body. Hydrogen and oxygen fed from the inlet is diffused by the gas-diffusing member and th en comes into contact with the platinum coating to enhance reactivity, thereby producing water from hydrogen and oxygen. A temperature of the reactor for generating moisture, wherein hydrogen is reacted with oxygen at a high temperature to generate moisture, is held to be below an ignition temperatur e of hydrogen or a hydrogen-containing gas so that hydrogen is reacted with oxyge n while preventing explosive combustion of hydrogen and oxygen. The platinum- coated catalyst layer on the internal wall of the reactor body is formed by treating the surface of the internal wall of the body, cleaning the treated surface, forming a barrier coating of a nonmetallic material of an oxide or nitride on the wa ll surface, and forming the platinum coating on the barrier coating.

4. 发明专利

CA2258632C APPARATUS FOR TREATMENT OF EXHAUST GAS CONTAINING HYDROGEN 未知
公开(公告)号：CA2258632C
公开(公告)日：2002-07-16
申请号：CA2258632
申请日：1999-01-06
申请人： FUJIKIN KK , HITACHI LTD
发明人： KAWADA KOJI , MORIMOTO AKIHIRO , IKEDA NOBUKAZU , MINAMI YUKIO , HIRAO KEIJI , TANABE YOSHIKAZU
IPC分类号： B01D53/86 , B01J23/42 , C01B5/00
摘要： An apparatus for treatment of exhaust gases containing hydrogen which permits always stable treatment with certainty of the exhaust gases from a semiconductor manufacturing line or the like irrespective of violent fluctuations in the flow rate of the exhaust gases, without having adverse effects on the operation of the semiconductor manufacturing line. The apparatus comprises: an ejector-type vacuum generator having a suction port connected to the discharge source of exhaust gases containing hydrogen and having a drive fluid supply part connected to an oxygen supply source, a hydrogen-oxygen reactor provided with a catalyst and connected to a drive fluid discharge port of the vacuum generator, and a drain reservoir connected to an outlet of the reactor for storing water discharged therefrom.

5. 发明专利

CA2255370A1 PROCESS OF SUPPLYING MOISTURE AT SMALL FLOW RATE 未知
公开(公告)号：CA2255370A1
公开(公告)日：1999-06-10
申请号：CA2255370
申请日：1998-12-09
申请人： FUJIKIN KK , HITACHI LTD
发明人： MORIMOTO AKIHIRO , KAWADA KOJI , TANABE YOSHIKAZU , MINAMI YUKIO , IKEDA NOBUKAZU
IPC分类号： C01B5/00 , F22B1/00 , H01L21/316 , H01L21/306
摘要： A process of supplying moisture at small flow rates which permits control with high precision of the flow of moisture to a semiconductor manufacturing line from an apparatus for generation of moisture, characterized in that the flow of hydrogen to a moisture generating reactor is controlled by means of a flow controller in such a way that an amount of hydrogen as fed is gradually increased from the start and reaches a specific set level such that when a specific time has passed, a predetermined rate of moisture begins to be produced and supplied to the semiconductor manufacturing line. The moisture is generated in the apparatus for generation of moisture in which hydrogen and oxygen are fed into a reactor provided with a platinum coat on the wall in the interior space, enhanced in reactivity by the platinum catalytic action and caused to instantaneously react with each other at a temperature lower than the ignition point to produce a moisture without undergoing combustion at a high temperature. 29

6. 发明专利

MY133477A METHOD OF FORMING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE WITH DUAL GATE CMOS STRUCTURE 未知
公开(公告)号：MY133477A
公开(公告)日：2007-11-30
申请号：MYPI9901787
申请日：1999-05-06
申请人： HITACHI LTD
发明人： TANABE YOSHIKAZU , YAMAMOTO NAOKI , MITANI SHINICHIRO , HANAOKA YUKO
IPC分类号： H01L21/3205 , H01L29/78 , H01L21/00 , H01L21/28 , H01L21/316 , H01L21/321 , H01L21/8234 , H01L21/8238 , H01L27/088 , H01L29/49
摘要： IN ORDER TO PROVIDE A LIGHT OXIDATION PROCESS TECHNIQUE FOR USE IN A CMOS LSI EMPLOYING A POLYMETAL GATE STRUCTURE AND A DUAL GATE STRUCTURE, SO THAT BOTH OXIDATION OF A REFRACTORY METAL FILM CONSTITUTING A PART OF A GATE ELECTRODE (15N) AND DIFFUSION OF BORON CONTAINED IN A P-TYPE POLYCRYSTALLINE SILICON FILM (10N) CONSTITUTING A PART OF THE GATE ELECTRODE (15N) CAN BE PREVENTED, A MIXED GAS CONTAINING A HYDROGEN GAS AND STEAM SYNTHESIZED FROM AN OXYGEN GAS AND A HYDROGEN GAS IS SUPPLIED TO A MAJOR SURFACE OF A SEMICONDUCTOR WAFER A1, AND A HEAT TREATMENT FOR IMPROVING A PROFILE OF A GATE INSULATING FILM THAT HAS BEEN CUT BY ETCHING UNDER AN EDGE PART OF THE GATE ELECTRODE (15N) IS CONDUCTED UNDER A LOW THERMAL LOAD CONDITION IN THAT THE REFRACTORY METAL FILM IS SUBSTANTIALLY NOT OXIDIZED, AND BORON CONTAINED IN A P-TYPE POLYCRYSTALLINE SILICON FILM (10N) CONSTITUTING A PART OF THE GATE ELECTRODE (15N) IS NOT DIFFUSED TO THE SEMICONDUCTOR SUBSTRATE (1) THROUGH THE GATE OXIDE FILM.(FIG 7,23)

7. 发明专利

DE69925648T2 未知
公开(公告)号：DE69925648T2
公开(公告)日：2006-03-16
申请号：DE69925648
申请日：1999-01-06
申请人： FUJIKIN KK , HITACHI LTD
发明人： TANABE YOSHIKAZU , MINAMI YUKIO , KAWADA KOJI , IKEDA NOBUKAZU , MORIMOTO AKIHIRO , HIRAO KEIJI
IPC分类号： B01D53/86 , B01D53/46 , B01J23/42
摘要： Apparatus for treating exhaust gases containing hydrogen from a semiconductor manufacturing line,' chemical plant or the like, which apparatus comprises aspirating means (7,16) for aspirating exhaust gases (G) containing hydrogen from a discharge source of said exhaust gases; mixing means (7,16) for mixing the aspirated exhaust gases with oxygen or air; reacting means (5) for reacting the mixed hydrogen and oxygen or air to form water, which reacting means comprises catalytic means (5h) for generating oxygen and hydrogen free radicals from oxygen and said exhaust gases respectively, which oxygen and hydrogen free radicals react to form water; and condensing means (9) for condensing water formed in the reactor. A second reacting means (6) may be provided for reacting un-reacted hydrogen and oxygen discharged from the first-mentioned reactor means to form water.

8. 发明专利

DE69829543D1 未知
公开(公告)号：DE69829543D1
公开(公告)日：2005-05-04
申请号：DE69829543
申请日：1998-12-08
申请人： FUJIKIN KK , HITACHI LTD
发明人： MINAMI YUKIO , KAWADA KOJI , TANABE YOSHIKAZU , IKEDA NOBUKAZU , MORIMOTO AKIHIRO
IPC分类号： C01B5/00 , F22B1/00 , H01L21/316
摘要： Methods and apparatus are disclosed for generating water vapour for use in a semiconductor manufacturing process. The disclosed methods comprise supplying oxygen and hydrogen gases to a reactor, said reactor including a catalyst that is capable of producing hydrogen and oxygen radicals from said gases, which radicals react very quickly with one another to form water; and thereafter delivering water in gaseous form from the reactor; wherein each of said gases is supplied to the reactor at a respective pre-set flow rate, thereby to provide water vapour from the reactor at a predetermined rate. A first method is characterized in that on start-up the supply of one of said hydrogen and oxygen gases is commenced at its respective pre-set flow rate, and thereafter the supply of the other gas is commenced and its flow rate is increased progressively in such manner that said flow rate of said other gas reaches its respective pre-set rate after any residual amount of said other gas has been delivered to the reactor, such that the rate of water vapour generation does not exceed said predetermined rate. A second method is characterized in that on start-up the supply of one of said gases is commenced at its respective pre-set flow rate, and thereafter the supply of the other gas is commenced, said other gas being diverted away from the reactor until any residual amount of said other gas has been purged. A third method is characterised in that on start-up, water vapour delivered from the reactor is discarded until water is delivered from the reactor at said predetermined rate.

9. 发明专利

CA2255370C PROCESS OF SUPPLYING MOISTURE AT SMALL FLOW RATE 未知
公开(公告)号：CA2255370C
公开(公告)日：2002-07-23
申请号：CA2255370
申请日：1998-12-09
申请人： HITACHI LTD , FUJIKIN KK
发明人： KAWADA KOJI , MINAMI YUKIO , IKEDA NOBUKAZU , TANABE YOSHIKAZU , MORIMOTO AKIHIRO
IPC分类号： C01B5/00 , F22B1/00 , H01L21/316 , H01L21/306
摘要： A process of supplying moisture at small flow rates which permits control with high precision of the flow of moisture to a semiconductor manufacturing line from an apparatus for generation of moisture, characterized in that the flow of hydrogen to a moisture generating reactor is controlled by means of a flow controller in such a way that an amount of hydrogen as fed is gradually increased from the start and reaches a specific set level such that when a specific time has passed, a predetermined rate of moisture begins to be produced and supplied to the semiconductor manufacturing line. The moisture is generated in the apparatus for generation of moisture in which hydrogen and oxygen are fed into a reactor provided with a platinum coat on the wall in the interior space, enhanced in reactivity by the platinum catalytic action and caused to instantaneously react with each other at a temperature lower than the ignition point to produce a moisture without undergoing combustion at a high temperature. 29

10. 发明专利

CA2258632A1 APPARATUS FOR TREATMENT OF EXHAUST GAS CONTAINING HYDROGEN 未知
公开(公告)号：CA2258632A1
公开(公告)日：1999-07-06
申请号：CA2258632
申请日：1999-01-06
申请人： HITACHI LTD , FUJIKIN KK
发明人： TANABE YOSHIKAZU , KAWADA KOJI , IKEDA NOBUKAZU , MORIMOTO AKIHIRO , MINAMI YUKIO , HIRAO KEIJI
IPC分类号： B01D53/86 , B01J23/42 , C01B5/00
摘要： An apparatus for treatment of exhaust gases containing hydrogen which permits always stable treatment with certainty of the exhaust gases from a semiconductor manufacturing line or the like irrespective of violent fluctuations in the flow rate of the exhaust gases, without having adverse effects on the operation of the semiconductor manufacturing. line. The apparatus comprises: an ejector-type vacuum generator having a suction port connected to the discharge source of exhaust gases containing hydrogen and having a drive fluid supply port connected to an oxygen supply source, a hydrogen-oxygen reactor provided with a catalyst and connected to a drive fluid discharge port of the vacuum generator, and a drain reservoir connected to an outlet of the reactor for storing water discharged therefrom.

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