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1. 发明专利

HK59294A Wire bonding 未知
公开(公告)号：HK59294A
公开(公告)日：1994-07-08
申请号：HK59294
申请日：1994-06-23
申请人： HITACHI LTD
发明人： NAKAJIMA MAKOTO , OHASHI YOSHO , CHUMA TOSHIO , HATORI KAZUO , ARAKI ISAO , ONUKI JIN , KOIZUMI MASAHIRO
IPC分类号： B23K20/00 , H01L21/00
摘要： In ball bonding, a ball (112) is formed on the end of a wire (105) by an electric discharge between the wire (105) and a discharge electrode (116). The ball (112) is subsequently pressed onto a pad of a semiconductor pellet and bonded thereto by press bonding under heat with the application of ultrasonic vibrations. However, the pressing of the ball onto the pad may damage the pellet if the ball (112) is too hard. Therefore, a reducing gas (121) is supplied to the environs of the ball (112) during its formation, the gas being supplied at a temperature preferably between 100 DEG C and 200 DEG C. This shows the cooling of the ball (112) resulting in a finer cyrstal structure, and a lower hardness. Hence the occurrence of cracking of the pellet is reduced.

2. 发明专利

DE3777384D1 未知
公开(公告)号：DE3777384D1
公开(公告)日：1992-04-16
申请号：DE3777384
申请日：1987-12-21
申请人： HITACHI LTD
发明人： NAKAJIMA MAKOTO , OHASHI YOSHO , CHUMA HITACHIKAMINAKAISHATAKU , HATORI KAZUO , ARAKI ISAO , ONUKI JIN , KOIZUMI MASAHIRO , SUZUKI HITOSHI , OKIKAWA SUSUMU
IPC分类号： B23K20/00 , H01L21/00
摘要： In ball bonding, a ball (112) is formed on the end of a wire (105) by an electric discharge between the wire (105) and a discharge electrode (116). The ball (112) is subsequently pressed onto a pad of a semiconductor pellet and bonded thereto by press bonding under heat with the application of ultrasonic vibrations. However, the pressing of the ball onto the pad may damage the pellet if the ball (112) is too hard. Therefore, a reducing gas (121) is supplied to the environs of the ball (112) during its formation, the gas being supplied at a temperature preferably between 100 DEG C and 200 DEG C. This shows the cooling of the ball (112) resulting in a finer cyrstal structure, and a lower hardness. Hence the occurrence of cracking of the pellet is reduced.

3. 发明专利

SG40094G Wire bonding 未知
公开(公告)号：SG40094G
公开(公告)日：1995-05-12
申请号：SG40094
申请日：1994-03-21
申请人： HITACHI LTD
发明人： NAKAJIMA MAKOTO , OHASHI YOSHO , CHUMA TOSHIO , HATORI KAZUO , ARAKI ISAO , ONUKI JIN , KOIZUMI MASAHIRO , SUZUKI HITOSHI , OKIKAWA SUSUMU
IPC分类号： B23K20/00 , H01L21/00

4. 发明专利

JPH09172117A LEAD FRAME AND ITS MANUFACTURE AND SEMICONDUCTOR DEVICE AND ITS MANUFACTURE 失效
公开(公告)号：JPH09172117A
公开(公告)日：1997-06-30
申请号：JP27583896
申请日：1996-10-18
申请人： HITACHI LTD
发明人： ITO KAZUTOSHI , OHASHI TAKEYA , HONDA TAKU , HATORI KAZUO , YAMADA TOMIO
IPC分类号： H01L23/48 , H01L23/50
摘要： PROBLEM TO BE SOLVED: To prevent the defective soldering of a semiconductor element to a lead frame on which the semiconductor element is mounted by specifying the number of photoelectrons discharged from the surface of the semiconductor element mounting section of the lead frame when the surface is irradiated with specific ultraviolet rays. SOLUTION: A lead frame is obtained by punching a copper or copper alloy material and the oil adhered to the lead frame at the punching time is removed. Then the surface of the lead frame is irradiated with an ultraviolet-ray beam having a beam diameter of 3mm and energy of 4.5eV and, when the number of photoelectrons discharged from the surface is 8, a semiconductor element is soldered to the lead frame. Finally, a semiconductor product is produced through a resin molding process. When the number of discharged photoelectrons is 8, on the other hand, the lead frame is sent to a reducing process. Therefore, the defective soldering of the semiconductor to the lead frame can be prevented and the yield of a semiconductor device can be improved.

5. 发明专利

JPH04359529A RESIN-SEALED SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH04359529A
公开(公告)日：1992-12-11
申请号：JP13487791
申请日：1991-06-06
申请人： HITACHI LTD , HITACHI TOBU SEMICONDUCTOR LTD
发明人： HATORI KAZUO , ARAKI ISAO , SHIMIZU KAZUO , OKADA SUMIO , DANNO TADATOSHI , TAKAHASHI KAZUYA
IPC分类号： H01L21/60 , H01L23/29 , H01L23/31 , H01L29/06
摘要： PURPOSE:To achieve the small size and the light weight of a resin-sealed semiconductor device. CONSTITUTION:In a resin-sealed semiconductor device 1, respective external terminals 2J for a semiconductor pellet 2 and respective inner leads 3B are connected electrically via an anisotropically conductive film 3 and through its conductive substance. In the resin-sealed semiconductor device 1, recessed parts 2B are constituted in the rear of the semiconductor pellet 2, and one part of a resin-sealed body 5 is buried to the inside of the recessed parts 2B.

6. 发明专利

JPH0286138A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH0286138A
公开(公告)日：1990-03-27
申请号：JP23642688
申请日：1988-09-22
申请人： HITACHI LTD
发明人： ARAKI ISAO , HATORI KAZUO , NAKAMURA SOICHIRO , HAIJIMA MIKIO
IPC分类号： H01L21/60 , H01L23/50
摘要： PURPOSE:To reduce a product cost, to simplify the manufacturing process and to improve bondability between leads and bonding wires by providing a previously coated solder layer on outer leads instead of providing a coat layer both on a tab and inner leads. CONSTITUTION:In a resin-sealed semiconductor device 1, external terminals 4C of a semiconductor chip 4 are formed of an aluminum alloy doped with an element for reducing migration (e.g., Cu), while bonding wires 5 are formed of a metallic material having hardness substantially equivalent to that of the external terminals 4C (Cu or an alloy thereof). A lead frame 2 of the resin-sealed semiconductor device 1 is formed of a precipitation hardened copper material (containing 0.05 to 0.15% Zr). A solder coat layer 7 is provided by the previously solder coating technique on the surface of outerlead sections 2C but not on the surface of tab sections 2A or inner lead sections 2B. The solder coat layer 7 is provided by a high-melting solder consisting of 75 to 95% lead and 25 to 5% tin.

7. 发明专利

JPS62276841A WIRE BONDING 失效
公开(公告)号：JPS62276841A
公开(公告)日：1987-12-01
申请号：JP11922886
申请日：1986-05-26
申请人： HITACHI LTD
发明人： NAKAJIMA MAKOTO , CHUMA TOSHIO , OHASHI YOSHIO , HATORI KAZUO
IPC分类号： H01L21/607 , H01L21/60
摘要： PURPOSE:To improve bondability while bonding damages are being suppressed by a method wherein, after a wire is pressed against a part to be bonded, the wire and the part to be bonded are relatively moved back and forth. CONSTITUTION:A capillary 14 is descended by a bonding head 9 and a ball 5a formed at the tip of a wire 5 is pressed against the pad 2a of a pellet 2 gradually. At that time, an ultrasonic oscillator 12 oscillates and applies an ultrasonic energy to the ball 5a through an oscillator 13, a horn 11 and a capillary 14 to move the wire 5 and the pad 2a back and forth relatively with a small oscillation amplitude. By moving an X-Y table 8 reciprocally, the ball 5a is moved back and forth in parallel against the pad 2a with a large operation amplitude. With this constitution, oxide films or the like formed on the junction surfaces of the wire and the part to be bonded are easily broken and clean surfaces under the films can be exposed so that the part to be bonded is bonded with the wire satisfactorily.

8. 发明专利

JPS61218149A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS61218149A
公开(公告)日：1986-09-27
申请号：JP5833185
申请日：1985-03-25
申请人： HITACHI LTD
发明人： HATORI KAZUO , ARAKI ISAO , ENOMOTO USUKE , SHOJI SENJI
IPC分类号： H01L21/52 , H01L21/48 , H01L21/58 , H01L23/50
摘要： PURPOSE:To preferably bond without gold or silver plating by removing an oxide film and a working distortion layer formed on the surface of copper or copper alloy used for a lead terminal and forming a surface roughness suitably. CONSTITUTION:A semiconductor chip is formed on a tab 2 at the center of a frame 1 used for a semiconductor integrated circuit, the tab of the chip and the ends of inner leads are connected by Au wirings, and a dam 3 is cut. It is molded with ceramics or resin after the bonding step is completed, but outer leads 5 are projected from the periphery of the package 4, and bent. In the frame 1, an oxide film is removed by electrolytic polishing method, and a working distortion layer is then removed. Further, the surface roughness of copper or copper alloy is suitably provided to further improve the bondability.

9. 发明专利

JPS55127039A STEM FOR SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS55127039A
公开(公告)日：1980-10-01
申请号：JP3444479
申请日：1979-03-26
申请人： HITACHI LTD
发明人： TANAKA NOBUKATSU , AKIYAMA KENJI , HATORI KAZUO
IPC分类号： H01L23/12
摘要： PURPOSE:To permit an ordinary-sized stem to mount a large-sized pellet by making a pellet-mounting face of a heat sink larger than the sectional part inserted into the circular hole of a header. CONSTITUTION:The upper part 8 of a heat sink, on which a pellet is mounted, is formed into a circle larger than the circular sectional part 9 inserted into the circular hole of a flange. The circular sectional part 9, which is not co-axial with the upper part of the heat sink, is located nearer to the edge of the flange, avoiding contact with the glass part of a stem lead. Thus, an ordinary-sized stem can be used for mounting a large-sized pellet, and a high pressure-tight use, a ready processing, and a lower price are made possible.

10. 发明专利

JPH10189849A SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH10189849A
公开(公告)日：1998-07-21
申请号：JP34493496
申请日：1996-12-25
申请人： HITACHI LTD
发明人： ITO KAZUTOSHI , OHASHI TAKEYA , HONDA TAKU , HATORI KAZUO
IPC分类号： H01L23/34 , H01L21/50 , H01L23/48
摘要： PROBLEM TO BE SOLVED: To obtain a semiconductor device, in which the heat of a semiconductor element can be dissipated with good efficiency by a method, wherein a rust preventive film which is composed of two upper and lower layers as a compound film by an organic corrosion inhibitor and as an oxide film is formed on the rear of an element-mounting part in a lead frame. SOLUTION: A semiconductor element 2 is die-bonded by solder 3 so as to be mounted on a lead frame 1. The semiconductor element 2 and a lead frame 1 are wire-bonded b a Al wire 4, so as to be molded integrally by an armor resin 5. At this time, the rear of the lead frame 1 in an element-mounting part is molded in a state that it is exposed on the surface of the armor resin 5, and a rust preventive film 6 is formed in its exposed part. The rust preventive film 6 is oxidized and treated, after an organic corrosion inhibitor (benzotriazoles and the like) is brought into contact with the surface of a Cu alloy forming the lead frame so as to form a compound film on the surface, and a film which is composed of two upper and lower layers as the compound film and as an oxide film is formed. The semiconductor device which is superior in a close contact property and can display a heat-dissipating effect.

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