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1. 发明专利

GB2157607B SEMICONDUCTOR DEVICE 未知
公开(公告)号：GB2157607B
公开(公告)日：1988-09-28
申请号：GB8503143
申请日：1985-02-07
申请人： HITACHI LTD
发明人： OKIKAWA SUSUMU , MIKINO HIROSHI , SUZUKI HIROMICHI , KITAMURA WAHEI
IPC分类号： H01L21/60 , H01L21/607 , H01L23/49 , H01L23/48 , B23K20/00
摘要： A semiconductor device in which a lead is connected to a bonding pad of a semiconductor pellet by a copper wire, and in which the copper wire is ball-bonded to the bonding pad. The copper wire is composed of copper having a purity of higher than 99.999%, and the ball portion has a microvickers hardness of 35 to 65, to reduce the likelihood of bonding damage to the semiconductor pellet and its surface layers.

2. 发明专利

FR2561445B1 未知
公开(公告)号：FR2561445B1
公开(公告)日：1988-03-18
申请号：FR8506994
申请日：1985-05-09
申请人： HITACHI LTD
发明人： OKIKAWA SUSUMU , MIKINO HIROSHI , SUZUKI HIROMICHI , KITAMURA WAHEI , SAKAMOTO DAIJI
IPC分类号： C22C21/00 , H01L23/49 , H01L23/48

3. 发明专利

GB2165178A Method and apparatus for wire bonding 未知
公开(公告)号：GB2165178A
公开(公告)日：1986-04-09
申请号：GB8425247
申请日：1984-10-05
申请人： HITACHI LTD , HITACHI METALS LTD
发明人： OKIKAWA SUSUMU , TANIMOTO MICHIO , SHIDA TOMOHIKO , SUWA MASATERU , IIZUKA TOMIO , HARA HISAO
IPC分类号： B23K20/00 , B23K20/24
摘要： A wire bonding apparatus, such as used frequently for assembling electronic parts, is designed to prevent a physicochemical reaction, which leads to defects in a wire bonding operation, from occurring between a bonding wire and a wire connecting tool so that fusion of the bonding wire to the wire connecting tool does not occur. The material of the connecting tool 13A is a substance which does not easily generate a physicochemical reaction with the bonding wire, and covering at least the region of the wire connecting tool 13A which contacts the bonding wire is a film 53 of a material which does not easily generate a physicochemical reaction with the bonding wire.

4. 发明专利

DE3514253A1 未知
公开(公告)号：DE3514253A1
公开(公告)日：1985-10-31
申请号：DE3514253
申请日：1985-04-19
申请人： HITACHI LTD
发明人： OKIKAWA SUSUMU , MIKINO HIROSHI , SUZUKI HIROMICHI , KITAMURA WAHEI
IPC分类号： H01L21/60 , H01L21/607 , H01L23/49 , H01L23/48 , H01L23/28 , H01B1/02
摘要： A semiconductor device in which a lead is connected to a bonding pad of a semiconductor pellet by a copper wire, and in which the copper wire is ball-bonded to the bonding pad. The copper wire is composed of copper having a purity of higher than 99.999%, and the ball portion has a microvickers hardness of 35 to 65, to reduce the likelihood of bonding damage to the semiconductor pellet and its surface layers.

5. 发明专利

DE3435489A1 未知
公开(公告)号：DE3435489A1
公开(公告)日：1985-05-02
申请号：DE3435489
申请日：1984-09-27
申请人： HITACHI LTD
发明人： OKIKAWA SUSUMU , MIKINO HIROSHI , KITAMURA WAHEI , SUZUKI HIROMICHI
IPC分类号： B23K20/00 , H01L21/603 , H01L23/49 , H01L23/48 , H01L21/60
摘要： A bonding wire 6 for connecting a semiconductor pellet 3 and a lead in a semiconductor device has the shape and height of its loop controlled by annealing the bonding wire at a specified temperature before bonding and/or by employing a specified composition for the material of the bonding wire. In addition, good bondability can be attained if the hardness of a ball formed at the end of the bonding wire for ball bonding is in a specified range of Vickers hardness of 30 to 50, preferably 35 to 42. The bonding wire is made of aluminum or an aluminum composition containing e.g. about 1.5 weight-% of magnesium or about 2% of silicon.

6. 发明专利

DE3851901T2 未知
公开(公告)号：DE3851901T2
公开(公告)日：1995-04-13
申请号：DE3851901
申请日：1988-01-15
申请人： HITACHI LTD
发明人： OKIKAWA SUSUMU , TANIMOTO MICHIO
IPC分类号： B23K20/00 , B23K20/24 , H01L21/00 , H01L21/48 , H01L21/60 , H01L21/607 , H01L23/49 , H02G1/12
摘要： When bonding a coated wire to a bonding site, a mixed gas is formed which consists of a combustible gas and a temperature controlling gas for lowering the combustion temperature of the combustible gas, and removing insulator at a bonding part of the coated wire and thus denuding the surface of a metal wire by the use of burning flames produced by the combustion of the combustible gas of the mixed gas. The removal of the insulator is executed by an insulator removal torch. Also, a metal ball may be formed on an end of the coated wire, the metal ball being joined to the bonding site, e.g. an external terminal of a semiconductor chip. A further part of the side of the coated wire into touch with an external drawing lead of the chip and the insulator at the contact part. Then the further part of the wire may be bonded to the lead. Thus the combustion flames (which do not damage or cause breakdown of the metal wire) will surround substantially the whole area of the bonding part of the coated wire, so that the insulator of the wire can be reliably removed. This reduces bonding defects. Moreover, the melting and shrinking insulator of the coated wire may be blown away, to prevent globes of insulator globes being formed on the wire.

7. 发明专利

GB2146937B SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 未知
公开(公告)号：GB2146937B
公开(公告)日：1987-04-23
申请号：GB8424394
申请日：1984-09-27
申请人： HITACHI LTD
发明人： OKIKAWA SUSUMU , MIKINO HIROSHI , KITAMURA WAHEI , SUZUKI HIROMICHI
IPC分类号： B23K20/00 , H01L21/603 , H01L23/49 , H01L23/48 , B23K20/24 , B23K31/02
摘要： A bonding wire 6 for connecting a semiconductor pellet 3 and a lead in a semiconductor device has the shape and height of its loop controlled by annealing the bonding wire at a specified temperature before bonding and/or by employing a specified composition for the material of the bonding wire. In addition, good bondability can be attained if the hardness of a ball formed at the end of the bonding wire for ball bonding is in a specified range of Vickers hardness of 30 to 50, preferably 35 to 42. The bonding wire is made of aluminum or an aluminum composition containing e.g. about 1.5 weight-% of magnesium or about 2% of silicon.

8. 发明专利

FR2563380B1 未知
公开(公告)号：FR2563380B1
公开(公告)日：1987-02-27
申请号：FR8501363
申请日：1985-01-31
申请人： HITACHI LTD
发明人： OKIKAWA SUSUMU , MIKINO HIROSHI , SUZUKI HIROMICHI , KITAMURA WAHEI
IPC分类号： H01L21/60 , H01L21/607 , H01L23/49 , H01L23/48
摘要： A semiconductor device in which a lead is connected to a bonding pad of a semiconductor pellet by a copper wire, and in which the copper wire is ball-bonded to the bonding pad. The copper wire is composed of copper having a purity of higher than 99.999%, and the ball portion has a microvickers hardness of 35 to 65, to reduce the likelihood of bonding damage to the semiconductor pellet and its surface layers.

9. 发明专利

FR2555813B1 未知
公开(公告)号：FR2555813B1
公开(公告)日：1986-06-20
申请号：FR8412906
申请日：1984-08-17
申请人： HITACHI LTD
发明人： OKIKAWA SUSUMU , MIKINO HIROSHI , KITAMURA WAHEI , SUZUKI HIROMICHI
IPC分类号： B23K20/00 , H01L21/603 , H01L23/49 , H01L23/48
摘要： A bonding wire 6 for connecting a semiconductor pellet 3 and a lead in a semiconductor device has the shape and height of its loop controlled by annealing the bonding wire at a specified temperature before bonding and/or by employing a specified composition for the material of the bonding wire. In addition, good bondability can be attained if the hardness of a ball formed at the end of the bonding wire for ball bonding is in a specified range of Vickers hardness of 30 to 50, preferably 35 to 42. The bonding wire is made of aluminum or an aluminum composition containing e.g. about 1.5 weight-% of magnesium or about 2% of silicon.

10. 发明专利

GB2157607A Semiconductor device 未知
公开(公告)号：GB2157607A
公开(公告)日：1985-10-30
申请号：GB8503143
申请日：1985-02-07
申请人： HITACHI LTD
发明人： OKIKAWA SUSUMU , MIKINO HIROSHI , SUZUKI HIROMICHI , KITAMURA WAHEI
IPC分类号： H01L21/60 , H01L21/607 , H01L23/49 , H01L23/48 , B23K20/00
摘要： A semiconductor device in which a lead is connected to a bonding pad of a semiconductor pellet by a copper wire, and in which the copper wire is ball-bonded to the bonding pad. The copper wire is composed of copper having a purity of higher than 99.999%, and the ball portion has a microvickers hardness of 35 to 65, to reduce the likelihood of bonding damage to the semiconductor pellet and its surface layers.

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