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1. 发明专利

AU6852498A Portable communication equipment 未知
公开(公告)号：AU6852498A
公开(公告)日：1999-11-08
申请号：AU6852498
申请日：1998-04-16
申请人： HITACHI LTD , HITACHI TOBU SEMICONDUCTOR LTD
发明人： HIRASHIMA TOSHINORI , ENDO TSUNEO , MORIKAWA MASATOSHI , HIBINO MITSUAKI , YAMADA TOMIO , KIKUCHI SAKAE , MORIYAMA SHINJI
IPC分类号： H01L23/367 , H04B1/036 , H05K1/02 , H05K1/03 , H05K3/40 , H05K3/46 , H01L25/00 , H01L23/12 , H01L23/36 , H04B1/04
摘要： Portable communication equipment provided with an antenna and a power amplifier circuit module for amplifying high-frequency signals emitted from the antenna, wherein the power amplifier circuit module is provided with a wiring board (1) and a semiconductor element (CHT) (2) which is mounted on the wiring board (1) and electrically and mechanically connected to the board (1) through a plurality of bump electrodes (3), characterized in that the substrate (1) has conductors (4 and 5) which are electrically and mechanically connected to part of the bump electrodes (3) and work as heat dissipating paths. The portable communication equipment is further characterized in that the wiring board (1) is constituted in a multilayered wiring board composed of multiple wiring layers and the conductors (4 and 5) used as the above heat dissipating paths are formed through each wiring layer of the multilayered wiring board, thereby further reducing the size of the power amplifier circuit module and, accordingly, the portable communication equipment.

2. 发明专利

JP2003031757A Hybrid module 审中-公开
标题翻译：混合模块
公开(公告)号：JP2003031757A
公开(公告)日：2003-01-31
申请号：JP2001211537
申请日：2001-07-12
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： MIWA TAKAO , SATO TOSHIYA , OGINO MASAHIKO , NAMATAME TOSHIHIDE , MOTOWAKI NARIHISA , WATABIKI SEIJI , FUKUMOTO EIJI , FURUKAWA YOKO , AKAMINE HITOSHI , ENDO TSUNEO , KUBO SEIJI
IPC分类号： H05K3/34 , H01L23/12 , H01L23/34 , H01L25/00 , H05K1/18 , H05K3/36
CPC分类号： H01L2224/32225
摘要： PROBLEM TO BE SOLVED: To realize miniaturization, reduction of the height and high heat radiation of a hybrid module on which a pyrogenetic integrated element is mounted. SOLUTION: By using an integrated passive element formed by integrating a passive element, a pyrogenetic integrated circuit is also mounted on a recessed part formed on a circuit board, so that miniaturization, reduction of the height and high heat radiation are realized. Thus, a small and low-height hybrid module, on which the pyrogenetic integrated circuit is mounted, is realized.
摘要翻译：要解决的问题：实现安装有发热集成元件的混合模块的小型化，降低高度和高散热。解决方案：通过使用通过集成无源元件形成的集成无源元件，热电集成电路也安装在形成在电路板上的凹陷部分上，从而实现了小型化，高度降低和高散热。因此，实现了安装有热解法集成电路的小而低的混合模块。

3. 发明专利

JP2002208668A SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 失效
公开(公告)号：JP2002208668A
公开(公告)日：2002-07-26
申请号：JP2001002371
申请日：2001-01-10
申请人： HITACHI LTD
发明人： YAMAURA MASASHI , NAKAJIMA KOICHI , MAEJIMA NOBUYOSHI , NEGISHI MIKIO , YAMADA TOMIO , KOIZUMI TOMOMICHI , ENDO TSUNEO
IPC分类号： H01L21/56 , H01L23/29 , H01L23/31 , H01L25/00 , H05K3/28
摘要： PROBLEM TO BE SOLVED: To prevent short-circuits due to solder re-fusion and flow-out inside a semiconductor device. SOLUTION: The semiconductor device is composed of a semiconductor chip 2, for which a plurality of pads 2c are formed on a main surface 2d; a chip component 3 for which connection terminal 3d are formed at both ends; a module substrate 4 on which the semiconductor chip 2 and the chip component 3 are loaded; a solder connection part 5 connecting the chip component 3 and the substrate side terminal 4a of the module substrate 4 by the solder; a metal wire 8 connecting the pad 2c of the semiconductor chip 2 and the substrate side terminal 4a of the module substrate 4 corresponding to it; and a sealing part formed of insulating low-elasticity resin, such as silicone resin and low- elasticity epoxy resin, and covering the semiconductor chip 2, the chip component 3, the solder connection part 5, and the metal wire 8; and the solder of the solder connection part 5 is prevented from flowing out due to the re-fusion.

4. 发明专利

JP2001237272A SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE COMPRISING IT 失效
公开(公告)号：JP2001237272A
公开(公告)日：2001-08-31
申请号：JP2000046311
申请日：2000-02-23
申请人： HITACHI LTD , HITACHI TOBU SEMICONDUCTOR LTD
发明人： KURIHARA YASUTOSHI , ENDO TSUNEO , IIZUKA MAMORU , KOYAMA KENJI , NEGISHI MIKIO
IPC分类号： B23K35/26 , H01L21/60 , H01L23/12 , H01L25/16 , H05K3/24 , H05K3/34
摘要： PROBLEM TO BE SOLVED: To obtain a semiconductor device having high yield of manufacture and high reliability in which soldered parts are protected against damage due to thermal and mechanical variation at the time of manufacture or operation by suppressing undue interfacial reaction when a chip component is soldered fixedly to a mounting member. SOLUTION: In the semiconductor device 30, chip components 12-14 are bonded onto a thick film Cu interconnection 4 provided on a mounting member 5 by means of a solder material of Sn or a solder material comprising more than one kind of substance selected from a group of Sn, Sb, Ag, Cu, Ni, P, Bi, Zn, Au, and In. The solder material and the thick film Cu interconnection 4 are bonded through a thick film conductor layer of Ag-Pt, a conductor layer of Ni or a conductor layer 4a of Pt.

5. 发明专利

JP2000353709A SEMICONDUCTOR DEVICE AND ELECTRONIC COMPONENT USING THE SAME 失效
公开(公告)号：JP2000353709A
公开(公告)日：2000-12-19
申请号：JP16633099
申请日：1999-06-14
申请人： HITACHI LTD , HITACHI CAR ENG CO LTD
发明人： KURIHARA YASUTOSHI , KAMINAGA TOSHIAKI , FUKATSU KATSUAKI , KOBAYASHI RYOICHI , KANAI KIYOSHI , ENDO TSUNEO , OGAWA TOSHIO
IPC分类号： H01L21/52
摘要： PROBLEM TO BE SOLVED: To improve reliability of a semiconductor device, where a semiconductor substrate is fixed to a mounting member. SOLUTION: A semiconductor substrate 1 and a mounting member 2 are fixed by a solder material, consisting of a kind of substance selected at least from among a group of Sn, Ag, Cu, Ni, P, Bi, Zn, Au and In, and the Pi layer provided on the surface to be fixed of the semiconductor substrate 1 and a solder material are fixed directly. Since the excessive reaction between metals on the fixing surface can be prevented by a Pt layer, reliability of the junction between the semiconductor substrate 1 and the mounting member can be improved.

6. 发明专利

JP2000277909A SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE USING THE SAME 失效
公开(公告)号：JP2000277909A
公开(公告)日：2000-10-06
申请号：JP7915199
申请日：1999-03-24
申请人： HITACHI LTD , HITACHI TOBU SEMICONDUCTOR LTD
发明人： KURIHARA YASUTOSHI , NEGISHI MIKIO , KOYAMA KENJI , IIZUKA MAMORU , ENDO TSUNEO , KANAI KIYOSHI , OKUBO TOSHIO
IPC分类号： H05K3/34 , H01L23/12 , H01L25/04 , H01L25/18
摘要： PROBLEM TO BE SOLVED: To prevent damage to a brazed part by thermal or mechanical change during manufacture or operation, by fitting a chip part on a placement member comprising ceramics with solder comprising Sn, and providing a thick-film conductor layer comprising Pt to the fitting part. SOLUTION: A chip 1 of Si which is a power semiconductor base body is fitted to a Cu base plate 2 with solder. On the Cu base plate 2, an alumina ceramics substrate 5 is fitted as a placement member provided with a thick-film Ag-Pt conductor 4 as a wiring layer using a silicon resin adhesive 6. Further, between the thick-film Ag-Pt conductors 4 of the alumina substrate 5, a chip part such as a thick-film resistor 11, IC chip substrate 12, capacitor chip 13, and Zener diode chip 14 is fitted using a brazing material 3', thus forming a circuit 10 for controlling the chip 1.

7. 发明专利

JP2000012584A SEMICONDUCTOR DEVICE, ITS MANUFACTURE AND IC CARD 失效
公开(公告)号：JP2000012584A
公开(公告)日：2000-01-14
申请号：JP17865798
申请日：1998-06-25
申请人： HITACHI LTD
发明人： TSUNODA SHIGEHARU , HOZOJI HIROYUKI , SAEKI JUNICHI , ENDO TSUNEO
IPC分类号： B42D15/10 , G06K19/077 , H01L21/56
摘要： PROBLEM TO BE SOLVED: To realize a semiconductor device of low cost which is thinned, has high reliability and high dimensional precision (especially, thickness direction), and can be mounted on an IC card or the like. SOLUTION: A semiconductor device 50 is provided with a wiring board 2 where a plurality of thin plate type electrodes are arranged, and fixed so as to constitute connecting terminals on a single side of an insulating board 2' where a hole 5 for mounting is bored at a part mounting a semiconductor element 1; the semiconductor element 1 which is mounted and fixed on a thin plate type electrode in the hole for mounting of the insulating board on the wiring board by using adhesive agent 6; connecting means 7 electrically connecting a plurality of electrodes arranged on a circuit surface of the semiconductor element with a plurality of the electrodes of the wiring board; and a resin sealing part 8 where the insulating board side of the wiring board is so resin-sealed and molded, containing at least the semiconductor element 1 and the connecting means, that a gate trace 9 of resin for sealing is isolated from the insulating board scarcely applying stress to the wiring board when a gate is eliminated.

8. 发明专利

JPH11204695A SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE 失效
公开(公告)号：JPH11204695A
公开(公告)日：1999-07-30
申请号：JP824098
申请日：1998-01-20
申请人： HITACHI LTD
发明人： MAEJIMA NOBUYOSHI , ENDO TSUNEO , KURIHARA YASUTOSHI
IPC分类号： C08K3/22 , C08L63/00 , H01L23/29 , H01L23/31
摘要： PROBLEM TO BE SOLVED: To obtain a semiconductor device having electromagnetic shield function as well as in which the heat resistance fatigue characteristics are enhanced at the bonding part of semiconductor element. SOLUTION: This semiconductor device comprises an insulating mold resin 30, a plurality of leads 24 extending inwards and outwards through the mold resin 30, a semiconductor element 21 being bonded to one side of a metallic support 27 while being sealed in the mold resin 30, and a means for connecting the leads 24 electrically with the electrodes of the semiconductor element 21 in the mold resin 30. In this case, the mold resin 30 is produced by adding (dispersing) 35-95 vol.% of ferrite powder or a magnetic material of metal represented by general formula MFe2 O4 or MO.nFe2 O3 (where M is a bivalent metal and n is an integer) into organic resin (epoxy resin). The mold resin 30 is set to have a coefficient of thermal expansion in the range of 14-20 ppm/ deg.C.

9. 发明专利

JPH09199667A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH09199667A
公开(公告)日：1997-07-31
申请号：JP804296
申请日：1996-01-22
申请人： HITACHI LTD
发明人： YOSHIDA ISAMU , MATSUMOTO KUNIO , TSUNODA SHIGEHARU , ENDO TSUNEO , DOBASHI YOSHIO
IPC分类号： H01L25/18 , H01L25/04
摘要： PROBLEM TO BE SOLVED: To reduce the move of wire at resin sealing and to increase mounting density by mounting semiconductors with center pads on a multilayer wiring board. SOLUTION: A multilayer wiring board 1 and a multilayer wiring board 2 are electrically connected and mounted on a tab 3, and a semiconductor element 4a to which circumference pads are arranged is mounted. A semiconductor element 4b with the pads arranged around the centerline of it is mounted between the multilayer wiring board 1 and the multilayer wiring board 2 and sealed with molding resin 5. Outer leads 6 and inner leads 7 for the connection to an external printed board are provided and between the semiconductor element 4a and the multilayer wiring board 1, between semiconductor elements 4b and the multilayer wiring board 1 and between the multilayer wiring board 1 and the inner leads 7 are connected by wire 8. With this, the bending of wire at resin sealing is reduced.

10. 发明专利

JPH0964248A SEMICONDUCTOR DEVICE AND ITS MANUFACTURE 失效
公开(公告)号：JPH0964248A
公开(公告)日：1997-03-07
申请号：JP21834595
申请日：1995-08-28
申请人： HITACHI LTD , HITACHI TOBU SEMICONDUCTOR LTD
发明人： MAEJIMA NOBUYOSHI , ENDO TSUNEO , KURIHARA YASUTOSHI , OKADA NOBUSUKE , NAKAJIMA KOICHI
IPC分类号： H01L23/28 , H01L23/29 , H01L23/34 , H01L23/36 , H01L25/04 , H01L25/18
摘要： PROBLEM TO BE SOLVED: To enhance the heat radiating and insulating properties of a semiconductor device by reducing the distance between a metallic substrate and the surface of a second insulating resin layer of a radiating board, keeping the insulating property. SOLUTION: A first insulating resin layer 13 is provided on one main surface of a metallic substrate 1 being the mother material of a circuit board 10. There is an opening in a region above this first insulating resin layer 13, and here a plated layer is provided. On the plated layer a metal wiring layer 14 is provided interposing the first insulating resin layer 13. Besides, on the other main surface of the metallic substrate 1, a second insulating resin layer 16 is provided nearly all over the whole main surface. By adopting constitution like this, it becomes possible to reduce the insulation distance between the metallic substrate 1 and the surface of the second insulating resin layer 16 on the side of a radiating board at the time of fitting the radiating board, keeping the insulating property. Consequently, heat generated by a semiconductor chip 30 passes through the metallic substrate 1 and the thin second insulating resin layer 16 and is conducted to the radiating board.

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