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1. 发明专利

JPS5976492A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：JPS5976492A
公开(公告)日：1984-05-01
申请号：JP17421283
申请日：1983-09-22
申请人： Hitachi Ltd
发明人： TSUJI SHINJI , MORI TAKAO , DOI KOUNEN , TAKEDA YUTAKA , HIRAO MOTONAO , NAKAMURA MICHIHARU
IPC分类号： H01L21/308 , H01S5/00 , H01S5/227
CPC分类号： H01S5/227 , H01S5/2275
摘要： PURPOSE:To obtain a semiconductor laser device of easy working and excellent characteristics by a method wherein a surface layer which constitutes a semiconductor laser is composed of an InGaAsP layer whose composition is made specific, and mesa etching is performed with alcoholic solution of a halogen. CONSTITUTION:On an InP substrate 1 of one conductivity type, the first InP clad layer 2 serving as a light enclosed layer of the same conductivity as that layer, an In1-xGaxAsyP1-y(x=0.26, y=0.57) active layer 3, the second InP clad layer 2' serving as a light enclosed layer of a different conductivity type from that of the substrate 1, and the InGaAsP layer serving as the surface layer 4 are laminated and epitaxially grown in liquid phase. Where, the surface layer 4 is made of the In1-xGaxAsyP1-y (x=0.26, y=0.57). Thereafter, a mask 5 composed of an SiO2 film of a fixed pattern is provided on the surface layer 4, and the active layer 3 is changed into a stripe form by mesa etching to one half of the layer 2 with the alcoholic solution of the halogen. Thus, reverse mesa etching is made accurate, and the excellent characteristics are obtained.
摘要翻译：目的：通过其中构成半导体激光器的表面层由组成为特定的InGaAsP层构成并用卤素的醇溶液进行台面蚀刻的方法来获得容易工作的半导体激光器件和优异的特性。构成：在一种导电类型的InP衬底1上，作为与该层相同导电性的光封闭层的第一InP覆盖层2，In1-xGaxAsyP1-y（x = 0.26，y = 0.57）有源层3 ，用作与基板1不同的导电类型的光封闭层的第二InP包覆层2'和用作表面层4的InGaAsP层被层压并以液相外延生长。其中表面层4由In1-xGaxAsyP1-y（x = 0.26，y = 0.57）制成。此后，在表面层4上设置由固定图案的SiO 2膜构成的掩模5，通过用卤素的醇溶液通过台面蚀刻将活性层3变成条形，形成层2的一半。因此，反面台面蚀刻被精确地获得，并且获得了优异的特性。

2. 发明专利

JPS5441685A SEMICONDUCTOR LASER UNIT 失效
公开(公告)号：JPS5441685A
公开(公告)日：1979-04-03
申请号：JP10781677
申请日：1977-09-09
申请人： HITACHI LTD
发明人： DOI KOUNEN , AIKI KUNIO , FUNAKOSHI KIYOHIKO , KANEYA NAOKI , TAKEDA YUTAKA , NAKAMURA SATOSHI , HIRAO MOTONAO , ITOU RIYOUICHI
IPC分类号： H01S5/00
摘要： PURPOSE:To increase the yield rate of semiconductor laser in which transversal mode is made stable, by making flat the active layer of semiconductor laser with good reproducibility, thrugh the provision of layers different in complex refractive index between semiconductor layers.

3. 发明专利

JPS5231665A GROWING METHOD OF SEMICONDUCTOR CRYSTAL 失效
公开(公告)号：JPS5231665A
公开(公告)日：1977-03-10
申请号：JP10693175
申请日：1975-09-05
申请人： HITACHI LTD
发明人： ASANO TETSUO , DOI KOUNEN , UTAKA MASATOSHI
IPC分类号： C30B19/10 , H01L21/208
摘要： PURPOSE:To obtain a multilayer semiconductor crystal which continuously possesses the good surface, by means of selecting the thickness of thin layer and cooling speed, as specified by contacting the srystal on the surface of liquid surface being converted into thin layer.

4. 发明专利

JPS59139692A Semiconductor laser element 失效
标题翻译：半导体激光元件
公开(公告)号：JPS59139692A
公开(公告)日：1984-08-10
申请号：JP482784
申请日：1984-01-17
申请人： Hitachi Ltd
发明人： FUKUZAWA TADASHI , DOI KOUNEN , NAKAMURA MICHIHARU
IPC分类号： H01S5/00 , H01S5/12 , H01S5/227
CPC分类号： H01S5/227 , H01S5/12 , H01S5/2275
摘要： PURPOSE:To reduce the effects caused by the reflected light of a laser beam, and to eliminate mode distribution noises which are generated at the time of transmission by an optical fiber and noises which are generated in case a plural number of longitudinal modes exist by a method wherein a double hetero structure is buried-in with other different semiconductor material and a periodic roughness is formed on the interface of a semiconductor layer wherein the exudation of the laser beam exists. CONSTITUTION:On the (100) surface of an N type InP substrate 1 are grown an N type InP layer 2 (Te doping, impurity concentration 3X10 /cm ) in a depth of 1mum, an In0.73Ga0.27As0.63P0.27 layer 3 (undoping, impurity concentration 5X10 /cm ) in a depth of 0.1mum and a P type In0.78Ga0.22As0.5P0.5 4 (0.4mum) according to an liquid-phase eiptaxial growth method. The semiconductor layer 4 is needed the conditions that the refractive index thereof is slightly smaller than that of the laser active layer 3 and is larger than that of a clad layer. the semiconductor layer 4 is formed in such a way that light oscillated from a laser is exuded in the layer 4 and is propagated in a transversal fundamental mode. As a result, the breaking limit by light in the laser active layer is never exceeded and a large output is obtained. Besides, a diffraction grating is formed on the semiconductor layer. For this reason, distortion is not generated in the active layer, thereby enabling to prolong the lifetime of the laser.
摘要翻译：目的：为了减少激光束的反射光的影响，并消除在光纤传输时产生的模式分布噪声和在存在多个纵向模式的情况下产生的噪声方法，其中双异质结构与其它不同的半导体材料埋入，并且在存在激光束的渗出的半导体层的界面上形成周期性的粗糙度。构成：在N型InP衬底1的（100）表面上生长深度为1μm的N型InP层2（Te掺杂，杂质浓度3×10 18 / cm 3），In 0.73 Ga 0.5。 27As0.63P0.27层3（未掺杂，杂质浓度5×10 16 / cm 3），深度为0.1μm的P型In 0.78 Ga 0.2 As 0.5 P 0.5.5（0.4mum），根据液体相位椭圆生长法。需要半导体层4的折射率略小于激光活性层3的折射率，并且比包覆层的折射率大。半导体层4的形成方式是使从激光器振荡的光分散在层4中，并且以横向基本模式传播。结果，永久不会超过激光有源层中的光的破坏极限，并获得大的输出。此外，在半导体层上形成衍射光栅。因此，在有源层中不产生畸变，能够延长激光的寿命。

5. 发明专利

JPS57128025A LIQUID PHASE EPITAXIALLY GROWING DEVICE 失效
公开(公告)号：JPS57128025A
公开(公告)日：1982-08-09
申请号：JP20532881
申请日：1981-12-21
申请人： HITACHI LTD
发明人： AIKI KUNIO , FUNAKOSHI KIYOHIKO , KOUNO TOSHIHIRO , DOI KOUNEN , ITOU RIYOUICHI
IPC分类号： C30B19/06 , H01L21/208 , H01L33/30 , H01S5/00
摘要： PURPOSE:To grow a crystal of high quality by disposing a substrate crystal on a low temperature region to thermally decompose and remove an impurity such as surface oxide or the like, thereby preventing the thermal damage of the crystalline surface of the substrate. CONSTITUTION:The prescribed solution, additive and crystalline substrate are mounted in a growing system, and a growing jig 3 mounted with a substrate crystal 4 and aluminums 5-7 is placed out of a furnace 1. On the other hand, the parts of Ga solutions 8-10 are heated at the prescribed temperature for 2hr. After the growing temperature is cooled to 760 deg.C, the jig 3 is moved, and a jig 15 and the jig 3 are integrated so that the aluminums 5-7 are disposed under a hole becoming a solution tank of the jig 15. Subsequently, a growing jig 14 is moved, GaAs, Al are mixed with Ga solvent, thereby preparing final GaAlAs grown solutions 8'-10'. The jig 3 is moved while ordinarily cooling the furnace at the prescribed temperature decreasing rate, while the substrate crystal 4 is sequentially contacted with the solutions 8'-10', thereby growing the crystal.

6. 发明专利

JPS5522807A SEMICONDUCTOR LASER ELEMENT AND MANUFACTURING OF THE SAME 失效
公开(公告)号：JPS5522807A
公开(公告)日：1980-02-18
申请号：JP7867478
申请日：1978-06-30
申请人： HITACHI LTD
发明人： DOI KOUNEN , AIKI KUNIO , KANEYA NAOKI , NAKAMURA SATOSHI , ITOU RIYOUICHI
IPC分类号： H01L21/208 , H01S5/00 , H01S5/042 , H01S5/12 , H01S5/223
摘要： PURPOSE:To improve the capalitity of a laser element as a light source for light fiber by making an active region area of the under surface of a semiconductor layer 1 thicker than the remaining areas, thereby permitting discontinuous changes in effective refractive indexes of laser light along a direction in which the laser light proceeds and a direction vertical thereto. CONSTITUTION:A first semiconductor layer 1 including an active region is sandwitched between a second semiconductor layer 2 and a third semiconductor 3, each having a relatively small refractive index and a wide forbidden gap in comparison with the semiconductor layer 1. By making an active region area W on the under surface of the semiconductor layer 1 thicker than the remaining areas, its effective refractive indexes to laser light along the direction in which the laser light proceeds and the direction vertical thereto are discontinuously changed. Thus it can be effectively used as a light source for light fiber communication.

7. 发明专利

JPS5267571A CRYSTALLIZATION METHOD FOR SEMICONDUCTOR 失效
公开(公告)号：JPS5267571A
公开(公告)日：1977-06-04
申请号：JP14300475
申请日：1975-12-03
申请人： HITACHI LTD
发明人： UTAKA MASATOSHI , ASANO TETSUO , DOI KOUNEN
IPC分类号： C30B19/00 , C30B29/40 , H01L21/208
摘要： PURPOSE:To provide a liquid phase growing method to grow a high purity crystal preventing the solusion from the contamination by the vessel for the growth.

8. 发明专利

JPS57149788A INJECTION SEMICONDUCTOR LASER ELEMENT 失效
公开(公告)号：JPS57149788A
公开(公告)日：1982-09-16
申请号：JP2274282
申请日：1982-02-17
申请人： HITACHI LTD
发明人： AIKI KUNIO , ITOU RIYOUICHI , SAITOU KAZUTOSHI , SHIGE NORIYUKI , DOI KOUNEN
IPC分类号： H01S5/00 , H01S5/223
摘要： PURPOSE:To increase reliability without inducing a crystal defect by a method wherein the third semiconductor layer is provided with a region discontinuously changing the lateral refractive index and laser oscillation is limited to basic lateral mode in injecting current to an active region. CONSTITUTION:After continuously applying liquidus growth to an n-Ga0.66Al0.35 AS layer 2 with a thickness of 2mum, n-Ga0.95Al0.05AS active region 3 with a thickness of 0.15mum, p-Ga0.65Al0.35S layer 4 with a thickness of 2mum on a GaAS substrate 1. The layer 4 is etched in belt shape with a width of 6mum. And liquidus growth is applied to an nGa0.6Al0.4AS layer 5 on the layer 4 up to the same height as that of the layer 4. After finishing a process. Zn6 is diffused to the upper surface of the layer 4 to provide an ohmic electrode 7 and an electrode 8 is also installed at the lower surface of the substrate 1. Parallel resonance reflection surfaces are mutually made to the surfaces 10, 11 of elements by clevage. In this way a crystal defect will not be induced and high reliability can be obtained.

9. 发明专利

JPS544088A MANUFACTURE FOR SEMICONDUCTOR LASER 失效
公开(公告)号：JPS544088A
公开(公告)日：1979-01-12
申请号：JP6892177
申请日：1977-06-13
申请人： HITACHI LTD
发明人： DOI KOUNEN , AIKI KUNIO , FUNAKOSHI KIYOHIKO , KURODA IKUROU , NAKAMURA MICHIHARU
IPC分类号： H01L21/208 , H01S5/00
摘要： PURPOSE:To manufacture a semiconductor laser formed growing double hetero crystal on a GaAs substrate crystal having concave groove, with stable oscillation mode and liquid phase growing method.

10. 发明专利

JPS52114269A SELECTIVE LIQUID GROWING METHOD 失效
公开(公告)号：JPS52114269A
公开(公告)日：1977-09-24
申请号：JP2993176
申请日：1976-03-22
申请人： HITACHI LTD
发明人： DOI KOUNEN , TAKAHASHI SUSUMU
IPC分类号： C30B19/04 , H01L21/208
摘要： PURPOSE:To perform selective liquid growth by separating the growing solution in contact with substrate crystal at every place where it is grown.

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