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1. 发明专利

JPS5992519A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS5992519A
公开(公告)日：1984-05-28
申请号：JP20212582
申请日：1982-11-19
申请人： HITACHI LTD , HITACHI MAXELL
发明人： GOTOU AKIRA , MURAMATSU SHINICHI , MATSUBARA SUNAO , NAKAO KENICHIROU , UTAKA MASATOSHI
IPC分类号： H01L31/04 , G03G15/00 , H01L21/205
摘要： PURPOSE:To prevent a semiconductor device from contamination according to a different kind dopant by a method wherein a semiconductor layer is adhered previously on the inside face of a reaction vessel. CONSTITUTION:After a p-i-n junction type element is formed in a reaction vessel, when the wall of the vessel is etched by plasma using CF4, a thin film adhered on the wall can not be removed wholly, and because a part of the thin film is left as an etching remainder, it result in generation of a contaminating material when formation of a next p-i-n junction type element is to be formed. Because it is hard to remove completely the contaminating material according to etching, the element can be prevented from contamination by covering the upper part of the contaminating material with a semiconductor thin film not to apply a bad influence when the element is to be formed. When the p-i-n junction type element is to be formed, the wall of the vessel is covered with a p-type or an i-type semiconductor thin film according to the plasma CVD method, for example.

2. 发明专利

JPS5223265A METHOD OF PROCESSING SEMICONDUCTOR MATERIALS 失效
公开(公告)号：JPS5223265A
公开(公告)日：1977-02-22
申请号：JP9953275
申请日：1975-08-18
申请人： HITACHI LTD
发明人： ASANO TETSUO , DOI KOUNEN , UTAKA MASATOSHI
IPC分类号： H01L29/80 , H01L21/208 , H01L21/338 , H01L29/76 , H01L29/812 , H01L33/30
摘要： PURPOSE:To obtain a liquid-phase epitaxial layer which has a flat surface by melting the substrate surface uniformly with the use of thin solution layers.

3. 发明专利

JPS51150976A LUMINOUS RADIATION ELECTRIC ETHCING PIT FOR A SEMICONDUCTOR 失效
公开(公告)号：JPS51150976A
公开(公告)日：1976-12-24
申请号：JP7450875
申请日：1975-06-20
申请人： HITACHI LTD
发明人： TAKAHASHI KUNIHIKO , UTAKA MASATOSHI
IPC分类号： H01L21/3063 , H01L21/302
摘要： PURPOSE:To make a etching pit pattern on the (100) and (11) faces radiating the infrared ray lamp, and flowing current at the same time.

4. 发明专利

JPS51124357A SOLID STATE OSCILLATOR AMPLIFIER 失效
公开(公告)号：JPS51124357A
公开(公告)日：1976-10-29
申请号：JP4953975
申请日：1975-04-23
申请人： HITACHI LTD
发明人： MIZUISHI KENICHI , MIYAZAKI MASARU , SATOU TADASHI , UTAKA MASATOSHI
IPC分类号： H03B9/12 , H01P1/00 , H03B9/14 , H03F3/10 , H03F3/46 , H03F3/48
摘要： PURPOSE:To improve the matching between a solid state oscillator element and a waveguide resonator with a simple construction.

5. 发明专利

JPS5186079A EKISOSEICHOHOHO OYOBI SOCHI 失效
公开(公告)号：JPS5186079A
公开(公告)日：1976-07-28
申请号：JP1049575
申请日：1975-01-27
申请人： HITACHI LTD
发明人： DOI KONEN , UTAKA MASATOSHI
IPC分类号： C30B19/00 , H01L21/208

6. 发明专利

JPS5174588A Handotaihoorukokasochi 失效
公开(公告)号：JPS5174588A
公开(公告)日：1976-06-28
申请号：JP14805274
申请日：1974-12-25
申请人： Hitachi Ltd
发明人： UTAKA MASATOSHI , KANDA YOZO
IPC分类号： H01L27/22 , H01L43/06
CPC分类号： H01L43/065

7. 发明专利

JPS5174587A Handotaisochioyobisonoseizoho 失效
公开(公告)号：JPS5174587A
公开(公告)日：1976-06-28
申请号：JP14805374
申请日：1974-12-25
申请人： Hitachi Ltd
发明人： MYAZAKI MASARU , UTAKA MASATOSHI
IPC分类号： H03B9/12 , H01L23/12 , H01L29/864 , H01L47/02 , H03B9/14

8. 发明专利

JPS5150884A GAAS NO EKISOSEICHOHOHO 失效
公开(公告)号：JPS5150884A
公开(公告)日：1976-05-04
申请号：JP12437374
申请日：1974-10-30
申请人： HITACHI LTD
发明人： DOI KONEN , UTAKA MASATOSHI
IPC分类号： C30B19/00 , C30B29/42 , H01L21/208

9. 发明专利

JPS5121473A HANDOTAINO KENMAHOHO 失效
公开(公告)号：JPS5121473A
公开(公告)日：1976-02-20
申请号：JP9329274
申请日：1974-08-16
申请人： HITACHI LTD
发明人： MYAZAKI MASARU , PPONMA KOJI , UTAKA MASATOSHI
IPC分类号： C23F3/00 , C23F1/04 , H01L21/306

10. 发明专利

JPS58185427A Preparation of high-purity silicon and its apparatus 失效
标题翻译：高纯硅及其设备的制备
公开(公告)号：JPS58185427A
公开(公告)日：1983-10-29
申请号：JP6607382
申请日：1982-04-20
申请人： Hitachi Ltd
发明人： UTAKA MASATOSHI
IPC分类号： C01B33/02 , C01B33/037
摘要： PURPOSE: To enable the production of high-purity silicon efficiently and safely for a long time, by precipitating silicon from a silicon-containing gas on high- purity silicon particles in a fluidized bed reactor equipped with a heating materil in it.
CONSTITUTION: In the fluidized bed reactor 1, high-purity silicon fine particles are fed from the fine particle feed pipe 2 to it, a mixed gas of trichlorosilane or dichlorosilane and hydrogen is fed from the gas feed pipe 3, a silicon-containing gas is prepared, and a fluidized bed is formed. While, electricity is applied from the contact terminals 6 and 6' to the plural heating materials 5 consiting of silicon bard set at equal spaces on the circumference of the concentrated circle of the inner wall of the cylindrical container 1, the inside of the container is heated, silicon is deposited from the silicon-containing gas on the fine particles, to form granular high-purity silicon. The bar heating material 5 may have a circular or square shape, or a silicon cylinder having pores may be used.
COPYRIGHT: (C)1983,JPO&Japio
摘要翻译：目的：为了能够长时间高效，安全地生产高纯度硅，通过在装有加热材料的流化床反应器中，通过在高纯度硅颗粒上的含硅气体中沉淀出硅。构成：在流化床反应器1中，从细颗粒供给管2向其供给高纯度硅微粒，从气体供给管3供给三氯硅烷或二氯硅烷与氢的混合气体，含硅气体并且形成流化床。同时从接触端子6,6'向从圆筒形容器1的内壁的圆周的等间距设置的多个加热材料5施加电力，容器的内部为加热后，将硅从含硅气体沉积在微粒上，形成粒状高纯度硅。棒状加热材料5可以具有圆形或正方形形状，或者可以使用具有孔的硅圆筒。

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