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1. 发明专利

JP2533496B2 失效
公开(公告)号：JP2533496B2
公开(公告)日：1996-09-11
申请号：JP17754486
申请日：1986-07-30
申请人： HITACHI LTD
发明人： INOE HIROAKI , SAKANO SHINJI , TSUJI SHINJI , OOISHI AKIO , HIRAO MOTONAO , MATSUMURA HIROYOSHI
IPC分类号： H01L27/15 , H01S3/16 , H01S5/00 , H01S5/026 , H01S5/06 , H01S3/18 , H01S3/103

2. 发明专利

JPH02310986A SEMICONDUCTOR LASER ELEMENT, PHOTOMASK AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH02310986A
公开(公告)日：1990-12-26
申请号：JP13412189
申请日：1989-05-25
申请人： HITACHI LTD
发明人： NAKA HIROSHI , HIRAO MOTONAO
IPC分类号： H01S5/00 , H01S5/12 , H01S5/40
摘要： PURPOSE:To perform a wavelength multiplex communication or a coherent communication with one semiconductor laser element sections by providing effective refractive index or/and diffraction grating pitch of resonators of respective unit semiconductor laser to be different ones from those of resonators of other unit semiconductor lasers. CONSTITUTION:Unit semiconductor laser sections A, B, C of a semiconductor laser element 1 are composed of DFB lasers, and the widths W1, W2, W3 of active layers 4 and the pitches a1, a2, a3 of diffraction gratings 21 are different (W1>W2>W3, a1>a2>a3). As a result, a laser light 20 having a wavelength of 1553nm of the emitting light is radiated from the laser section A having W1=1.5mum, a1=2405Angstrom , a laser light 20 having a wavelength of 1543nm is irradiated from the laser section B having W2=1.0mum, a2=2400Angstrom , and a laser light 20 having a wavelength of 1533nm is radiated from the laser section C having W3=0.65mum, a3=2395Angstrom .

3. 发明专利

JPH0212036B2 失效
公开(公告)号：JPH0212036B2
公开(公告)日：1990-03-16
申请号：JP17421283
申请日：1983-09-22
申请人： HITACHI LTD
发明人： TSUJI SHINJI , MORI TAKAO , DOI KONEN , TAKEDA YUTAKA , HIRAO MOTONAO , NAKAMURA MICHIHARU
IPC分类号： H01L21/308 , H01S5/00 , H01S5/227

4. 发明专利

JPS62143489A SEMICONDUCTOR LASER 失效
公开(公告)号：JPS62143489A
公开(公告)日：1987-06-26
申请号：JP28285385
申请日：1985-12-18
申请人： HITACHI LTD
发明人： OISHI AKIO , KURODA TAKARO , TSUJI SHINJI , HIRAO MOTONAO , MATSUMURA HIROYOSHI
IPC分类号： H01L21/265 , H01S5/00
摘要： PURPOSE:To easily form a current blocking layer with sufficient controllability, in the deep part of crystal layer, by performing ion implantation in a buried- growth layer to form a current blocking layer after a mesa containing an active layer is buried with the same conduction type layer and is grown. CONSTITUTION:After an InGaAsP active layer and a P-type InP clad layer 6 are grown on an N-type InP substrate, a whole part is eliminated by etching, while the active layer of 0.5-2mum thick is left thereon. Then the whole part containing a mesa is buried with a P-type InP layer, and an InGaAsP cap layer is grown on its surface. Ion implantation of S, Se or Si is performed excepting the part to be a current path, and an N-type InP layer is formed by an annealing treatment. Comparing with a burying structure wherein a P-type layer and an N-type layer are selectively grown on the both sides of a mesa in the time of buried-growth, a current blocking layer can be easily formed thereby. It is also easily achieved to form an N-type layer in a P-type layer applying ion implantation.

5. 发明专利

JPS61260201A FORMATION OF DIFFRACTION GRATING 失效
公开(公告)号：JPS61260201A
公开(公告)日：1986-11-18
申请号：JP10121285
申请日：1985-05-15
申请人： HITACHI LTD
发明人： OKAI MAKOTO , TSUJI SHINJI , NAKAMURA HITOSHI , OISHI AKIO , SAKANO SHINJI , KAYANE NAOKI , HIRAO MOTONAO , MATSUMURA HIROYOSHI
IPC分类号： G02B5/18
摘要： PURPOSE:To make possible the formation of a diffraction grating having lambda/4 shift by providing parts where a photosensitive material is coated and parts in direct contact with a soln. on a substrate surface and effecting positive reaction in one thereof and negative reaction in the other. CONSTITUTION:A positive resist is coated over the entire surface of a p-type InP substrate 1 by using a rotary type coating machine and a resist pattern 2 is formed by an ion milling method. A spacer 6 made of 'Teflon(R)' is held in place to the substrate and a quartz plate is fixed thereto by using clamping jigs. The spacing between the quartz plate 5 and the substrate 1 is filled with the soln. 8 contg. an org. material such as pyrrole which cures by oxidation reaction and is exposed for the specified time by an interference exposing method using an He-Cd laser. The pattern in which the parts 2' coated with the resist and the non-coated parts 8 are shifted by lambda/4 phase is formed when such substrate is developed. The resist is further etched by using an etching soln. (HBr:HNO3:H2O=1:1:34 by volume) by which the diffraction grating having the lambda/4 shift is formed on the surface of the p-InP substrate 1.

6. 发明专利

JPS6184888A Buried hetero type semiconductor laser 失效
标题翻译： BURIED HETERO型半导体激光器
公开(公告)号：JPS6184888A
公开(公告)日：1986-04-30
申请号：JP20622184
申请日：1984-10-03
申请人： Hitachi Ltd
发明人： HIRAO MOTONAO , OISHI AKIO , KAYANE NAOKI , TSUJI SHINJI
IPC分类号： H01S5/00
摘要： PURPOSE: To obtain the titled device of high reliability and excellent high- temperature characteristic by forming a current block layer of uniform thickness by a method wherein a p-n junction, the current block layer, is formed by selective diffusion, using an etching mask to form a mesa part as the diffusion mask at the same time.
CONSTITUTION: Using liquid phase epitaxial growth, an n type InP buffer layer 12 and an active layer 13 of In, Ga, As, P four-element mixed crystal corresponding to the luminous wavelength of good lattice matching with InP are successively grown on an n
+ InP substrate (100) plane 11; next, a p type InP clad layer 14 is formed on the active layer, thus producing a multilayer structural crystal. Then, the multilayer grown crystal is coated with an oxide film, a stripe 15 is formed, and a p type current block layer 16 is formed by diffusing Zn, using the mask of this stripe 15. The InP clad layer 14 on the active layer 13 is selectively etched with an etchant which selectively etches only InP. Only the active layer is etched away with an etchant which selectively etches reversely only the InGaAsP four-element crystal. Finally, an n type InP layer 17 and an InP layer 18 are formed on the mesa side surface.
COPYRIGHT: (C)1986,JPO&Japio
摘要翻译：目的：通过以下方法形成均匀厚度的电流阻挡层来获得高可靠性和优异的高温特性的标题器件，其中通过选择性扩散形成pn结，电流阻挡层，使用蚀刻掩模形成同时作为扩散掩模的台面部分。构成：使用液相外延生长，对应于与InP的良好晶格匹配的发光波长的In，Ga，As，P四元素混合晶体的n型InP缓冲层12和有源层13依次生长在n InP衬底（100）平面11; 接下来，在有源层上形成p型InP覆盖层14，由此产生多层结构晶体。然后，用氧化物膜涂覆多层生长的晶体，形成条纹15，并使用该条纹15的掩模使Zn扩散形成ap型电流阻挡层16.活性层13上的InP覆盖层14 用选择性蚀刻仅InP的蚀刻剂选择性地蚀刻。仅使用选择性地仅蚀刻InGaAsP四元素晶体的蚀刻剂蚀刻掉有源层。最后，在台面侧表面上形成n型InP层17和InP层18。

7. 发明专利

JPS60100493A SEMICONDUCTOR LASER DEVICE 失效
公开(公告)号：JPS60100493A
公开(公告)日：1985-06-04
申请号：JP20742883
申请日：1983-11-07
申请人： HITACHI LTD
发明人： HIRAO MOTONAO
IPC分类号： H01S5/00 , H01S5/20
摘要： PURPOSE:To readily manufacture a semiconductor laser by using partial diffusion technique and passing diffusion technique only as means for effectively flowing a current only to the active layer of the laser. CONSTITUTION:A P-N junction is formed by utilizing the impurity density difference to the portion except a current path by the diffusion of an impurity for imparting a reverse conductive type as a current element layer. For example, a P type InP buffer layer (impurity density 5X10 cm ) 2, an undoped InGaAsP active layer 3, an N type InP current blocking layer (impurity density 2X10 cm ) 4, an N type InP clad layer (impurity density 7X10 cm ) 5, an N type InP current blocking layer (impurity density 2X10 cm ) 6, an N type InP layer (impurity density 7X10 cm ) 7 and an N type InGaAsP cap layer (impurity density 4X10 cm ) 8 are provided on a P type InP substrate crystal (impurity density 5X10 cm ) 1. With the Si3N4 as a mask a partial diffusion is performed in a region 9 is formed to form a current path to the active layer.

8. 发明专利

JPS6050981A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS6050981A
公开(公告)日：1985-03-22
申请号：JP15783183
申请日：1983-08-31
申请人： HITACHI LTD
发明人： TSUJI SHINJI , MORI TAKAO , KASHIWADA YASUTOSHI , HIRAO MOTONAO , FUJISAKI YOSHIHISA , IMAI KUNINORI
IPC分类号： H01L21/28 , H01L29/43 , H01L31/107 , H01L33/30 , H01L33/40 , H01S5/00 , H01S5/042
摘要： PURPOSE:To obtain a stable ohmic contact by forming a double structure of an In1-xGaxAsyP1-y film and an In1-x'Gax'AsyP1-y'(x>x'+0.05) when forming the surface layer to become the primary layer of the electrode on an InGaAsP layer. CONSTITUTION:An InGaAsP active layer 2, a P type InP clad layer 3, and an InGaAsP surface layer 4 are laminated and grown on an InP substrate 1, and an electrode metal layer which mainly contains Au is covered on the layer 4. In this structure, the layer 4 is not a single layer of InGaAsP, but is a laminate of the first surface InGaAsP layer 41 and the second surface InGaAsP layer 42. In other words, the layer 41 contacted with the electrode metal layer is formed of In1-xGaxAsyP1-y' and the layer 42 disposed at the lower side is formed of In1-x'Gax'Asy'P1-y'(x>x'+0.05). Thus, even if the reaction of Au in the electrode metal layer occurs in the layer 41, the surface of the layer 42 is stable, and the I-V characteristic does not decrease due to the heat treatment.

9. 发明专利

JPS6020594A MANUFACTURE OF SEMICONDUCTOR LASER 失效
公开(公告)号：JPS6020594A
公开(公告)日：1985-02-01
申请号：JP12768083
申请日：1983-07-15
申请人： HITACHI LTD
发明人： KASHIWADA YASUTOSHI , HIRAO MOTONAO , TSUJI SHINJI , FUJISAKI YOSHIHISA , NAKAMURA MICHIHARU
IPC分类号： H01L21/208 , H01S5/00
摘要： PURPOSE:To improve the distribution in a plane of the thickness of an epitaxial layer at the fabrication of the semiconductor laser element of a buried hetero structure by performing liquid-phase epitaxy with using the substrate in which each of the angles among those made by the surface of the single crystal substrate with a crystallographically main plane, which are in parallel and vertical directions to the direction of a stripe-form mesa are present within the specified range. CONSTITUTION:If the angle theta1 in a vertical direction to the direction of a stripe-form mesa is large, the formed mesa becomes unsymmetrical and has a bad influence upon the element characteristics. A permissible range of theta1 is as 0

10. 发明专利

JPS5976492A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：JPS5976492A
公开(公告)日：1984-05-01
申请号：JP17421283
申请日：1983-09-22
申请人： Hitachi Ltd
发明人： TSUJI SHINJI , MORI TAKAO , DOI KOUNEN , TAKEDA YUTAKA , HIRAO MOTONAO , NAKAMURA MICHIHARU
IPC分类号： H01L21/308 , H01S5/00 , H01S5/227
CPC分类号： H01S5/227 , H01S5/2275
摘要： PURPOSE:To obtain a semiconductor laser device of easy working and excellent characteristics by a method wherein a surface layer which constitutes a semiconductor laser is composed of an InGaAsP layer whose composition is made specific, and mesa etching is performed with alcoholic solution of a halogen. CONSTITUTION:On an InP substrate 1 of one conductivity type, the first InP clad layer 2 serving as a light enclosed layer of the same conductivity as that layer, an In1-xGaxAsyP1-y(x=0.26, y=0.57) active layer 3, the second InP clad layer 2' serving as a light enclosed layer of a different conductivity type from that of the substrate 1, and the InGaAsP layer serving as the surface layer 4 are laminated and epitaxially grown in liquid phase. Where, the surface layer 4 is made of the In1-xGaxAsyP1-y (x=0.26, y=0.57). Thereafter, a mask 5 composed of an SiO2 film of a fixed pattern is provided on the surface layer 4, and the active layer 3 is changed into a stripe form by mesa etching to one half of the layer 2 with the alcoholic solution of the halogen. Thus, reverse mesa etching is made accurate, and the excellent characteristics are obtained.
摘要翻译：目的：通过其中构成半导体激光器的表面层由组成为特定的InGaAsP层构成并用卤素的醇溶液进行台面蚀刻的方法来获得容易工作的半导体激光器件和优异的特性。构成：在一种导电类型的InP衬底1上，作为与该层相同导电性的光封闭层的第一InP覆盖层2，In1-xGaxAsyP1-y（x = 0.26，y = 0.57）有源层3 ，用作与基板1不同的导电类型的光封闭层的第二InP包覆层2'和用作表面层4的InGaAsP层被层压并以液相外延生长。其中表面层4由In1-xGaxAsyP1-y（x = 0.26，y = 0.57）制成。此后，在表面层4上设置由固定图案的SiO 2膜构成的掩模5，通过用卤素的醇溶液通过台面蚀刻将活性层3变成条形，形成层2的一半。因此，反面台面蚀刻被精确地获得，并且获得了优异的特性。

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