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    • 1. 发明授权
    • Two-terminal nanotube devices including a nanotube bridge and methods of making same
    • 包括纳米管桥的两端纳米管装置及其制造方法
    • US08134220B2
    • 2012-03-13
    • US12139910
    • 2008-06-16
    • H. Montgomery ManningThomas RueckesJonathan W. WardBrent M. Segal
    • H. Montgomery ManningThomas RueckesJonathan W. WardBrent M. Segal
    • G11C11/00H01L23/52H01L21/02
    • H01L51/0591B82Y10/00G11C13/025H01L51/0048Y10S977/943
    • Nanotube switching devices having nanotube bridges are disclosed. Two-terminal nanotube switches include conductive terminals extending up from a substrate and defining a void in the substrate. Nantoube articles are suspended over the void or form a bottom surface of a void. The nanotube articles are arranged to permanently contact at least a portion of the conductive terminals. An electrical stimulus circuit in communication with the conductive terminals is used to generate and apply selected waveforms to induce a change in resistance of the device between relatively high and low resistance values. Relatively high and relatively low resistance values correspond to states of the device. A single conductive terminal and a interconnect line may be used. The nanotube article may comprise a patterned region of nanotube fabric, having an active region with a relatively high or relatively low resistance value. Methods of making each device are disclosed.
    • 公开了具有纳米管桥的纳米管开关器件。 两端纳米管开关包括从衬底向上延伸并且在衬底中限定空隙的导电端子。 纳米管制品悬浮在空隙上或形成空隙的底部表面。 纳米管制品布置成永久地接触导电端子的至少一部分。 使用与导电端子连通的电刺激电路来产生并施加所选择的波形以引起器件在较高和较低电阻值之间的电阻变化。 相对较高且相对较低的电阻值对应于器件的状态。 可以使用单个导电端子和互连线。 纳米管制品可以包括具有相对较高或相对低的电阻值的有源区的纳米管织物的图案化区域。 公开了制造每个装置的方法。
    • 4. 发明授权
    • Triodes using nanofabric articles and methods of making the same
    • 使用纳米制品的三极管和制造相同的方法
    • US08115187B2
    • 2012-02-14
    • US12124475
    • 2008-05-21
    • Brent M. SegalJonathan W. WardThomas Rueckes
    • Brent M. SegalJonathan W. WardThomas Rueckes
    • H01L29/02
    • H01J21/10H01J3/021H01J19/38H01J2203/0232Y10S977/742
    • Vacuum microelectronic devices with carbon nanotube films, layers, ribbons and fabrics are provided. The present invention discloses microelectronic vacuum devices including triode structures that include three-terminals (an emitter, a grid and an anode), and also higher-order devices such as tetrodes and pentodes, all of which use carbon nanotubes to form various components of the devices. In certain embodiments, patterned portions of nanotube fabric may be used as grid/gate components, conductive traces, etc. Nanotube fabrics may be suspended or conformally disposed. In certain embodiments, methods for stiffening a nanotube fabric layer are used. Various methods for applying, selectively removing (e.g. etching), suspending, and stiffening vertically- and horizontally-disposed nanotube fabrics are disclosed, as are CMOS-compatible fabrication methods. In certain embodiments, nanotube fabric triodes provide high-speed, small-scale, low-power devices that can be employed in radiation-intensive applications.
    • 提供具有碳纳米管膜,层,带和织物的真空微电子器件。 本发明公开了包括三端(发射极,栅极和阳极)的三极管结构的微电子真空装置,以及诸如四极和五极管的高阶器件,所有这些都使用碳纳米管来形成 设备。 在某些实施例中,纳米管织物的图案化部分可以用作栅极/栅极部件,导电迹线等。纳米管织物可以悬挂或保形地设置。 在某些实施例中,使用用于加强纳米管织物层的方法。 公开了用于施加,选择性地去除(例如蚀刻)悬浮和加强垂直和水平布置的纳米管织物的各种方法,以及CMOS兼容的制造方法。 在某些实施例中,纳米管织物三极管提供可用于辐射密集型应用中的高速,小规模,低功率的器件。