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1. 发明授权

US08587989B2 NRAM arrays with nanotube blocks, nanotube traces, and nanotube planes and methods of making same 有权
标题翻译：具有纳米管块的NRAM阵列，纳米管迹线和纳米管平面及其制造方法
公开(公告)号：US08587989B2
公开(公告)日：2013-11-19
申请号：US12486602
申请日：2009-06-17
申请人： H. Montgomery Manning , Thomas Rueckes , Claude L. Bertin , Jonathan W. Ward , Garo Derderian
发明人： H. Montgomery Manning , Thomas Rueckes , Claude L. Bertin , Jonathan W. Ward , Garo Derderian
IPC分类号： G11C13/00
CPC分类号： G11C13/025 , B82Y10/00 , H01L27/2409 , H01L27/2436 , H01L27/2463 , H01L27/2472 , H01L45/04 , H01L45/1233 , H01L45/149 , H01L45/1675
摘要： NRAM arrays with nanotube blocks, traces and planes, and methods of making the same are disclosed. In some embodiments, a nanotube memory array includes a nanotube fabric layer disposed in electrical communication with first and second conductor layers. A memory operation circuit including a circuit for generating and applying a select signal on first and second conductor layers to induce a change in the resistance of the nanotube fabric layer between the first and second conductor layers is provided. At least two adjacent memory cells are formed in at least two selected cross sections of the nanotube fabric and conductor layers such that each memory cell is uniquely addressable and programmable. For each cell, a change in resistance corresponds to a change in an informational state of the memory cell. Some embodiments include bit lines, word lines, and reference lines. In some embodiments, 6F2 memory cell density is achieved.
摘要翻译：公开了具有纳米管块，轨迹和平面的NRAM阵列及其制造方法。在一些实施例中，纳米管存储器阵列包括布置成与第一和第二导体层电连通的纳米管织物层。一种存储器操作电路，包括用于在第一和第二导体层上产生和施加选择信号以引起第一和第二导体层之间的纳米管织物层的电阻变化的电路。至少两个相邻的存储单元形成在纳米管织物和导体层的至少两个选定的横截面中，使得每个存储单元是唯一可寻址和可编程的。对于每个单元，电阻变化对应于存储单元的信息状态的变化。一些实施例包括位线，字线和参考线。在一些实施例中，实现6F2存储单元密度。

2. 发明申请

US20110156009A1 COMPACT ELECTRICAL SWITCHING DEVICES WITH NANOTUBE ELEMENTS, AND METHODS OF MAKING SAME 有权
标题翻译：具有纳米元件的紧凑型电气开关装置及其制造方法
公开(公告)号：US20110156009A1
公开(公告)日：2011-06-30
申请号：US12651288
申请日：2009-12-31
申请人： H. Montgomery Manning , Thomas Rueckes , Claude L. Bertin
发明人： H. Montgomery Manning , Thomas Rueckes , Claude L. Bertin
IPC分类号： H01L51/10 , H01L51/40
CPC分类号： B82Y10/00 , G11C13/025 , H01L27/24 , H01L29/0665 , H01L29/43 , H01L51/0048 , Y10S977/742 , Y10S977/936
摘要： An electrical device includes a substrate; first and second active areas; first and second word lines disposed in a first plane; first and second bit lines in a second plane and in electrical communication with first and second active areas; and a reference line disposed in a third plane. A nanotube element disposed in a fourth plane is in electrical communication with first and second active areas and the reference line via electrical connections at a first surface of the nanotube element. The nanotube element includes first and second regions having resistance states that are independently adjustable in response to electrical stimuli, wherein the first and second regions nonvolatilely retain the resistance states. Arrays of such electrical devices can be formed as nonvolatile memory devices. Methods for fabricating such devices are also disclosed.
摘要翻译：电气装置包括基板; 第一和第二活跃区域; 布置在第一平面中的第一和第二字线; 第一和第二位线在第二平面中并且与第一和第二有效区域电连通; 以及设置在第三平面中的参考线。设置在第四平面中的纳米管元件通过在纳米管元件的第一表面处的电连接与第一和第二有源区域和参考线路电连通。纳米管元件包括具有响应于电刺激可独立调节的电阻状态的第一和第二区域，其中第一和第二区域非常地保持电阻状态。这种电气装置的阵列可以形成为非易失性存储装置。还公开了制造这种装置的方法。

3. 发明授权

US08222704B2 Compact electrical switching devices with nanotube elements, and methods of making same 有权
标题翻译：具有纳米管元件的紧凑型电气开关器件及其制造方法
公开(公告)号：US08222704B2
公开(公告)日：2012-07-17
申请号：US12651288
申请日：2009-12-31
申请人： H. Montgomery Manning , Thomas Rueckes , Claude L. Bertin
发明人： H. Montgomery Manning , Thomas Rueckes , Claude L. Bertin
IPC分类号： H01L29/12 , H01L29/41 , H01L29/43 , H01L27/11
CPC分类号： B82Y10/00 , G11C13/025 , H01L27/24 , H01L29/0665 , H01L29/43 , H01L51/0048 , Y10S977/742 , Y10S977/936
摘要： An electrical device includes a substrate; first and second active areas; first and second word lines disposed in a first plane; first and second bit lines in a second plane and in electrical communication with first and second active areas; and a reference line disposed in a third plane. A nanotube element disposed in a fourth plane is in electrical communication with first and second active areas and the reference line via electrical connections at a first surface of the nanotube element. The nanotube element includes first and second regions having resistance states that are independently adjustable in response to electrical stimuli, wherein the first and second regions nonvolatilely retain the resistance states. Arrays of such electrical devices can be formed as nonvolatile memory devices. Methods for fabricating such devices are also disclosed.
摘要翻译：电气装置包括基板; 第一和第二活跃区域; 布置在第一平面中的第一和第二字线; 第一和第二位线在第二平面中并且与第一和第二有效区域电连通; 以及设置在第三平面中的参考线。设置在第四平面中的纳米管元件通过在纳米管元件的第一表面处的电连接与第一和第二有源区域和参考线路电连通。纳米管元件包括具有响应于电刺激可独立调节的电阻状态的第一和第二区域，其中第一和第二区域非常地保持电阻状态。这种电气装置的阵列可以形成为非易失性存储装置。还公开了制造这种装置的方法。

4. 发明授权

US09287356B2 Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same 有权
标题翻译：非挥发性纳米管二极管和非易失性纳米管块及使用其的系统及其制造方法
公开(公告)号：US09287356B2
公开(公告)日：2016-03-15
申请号：US12356447
申请日：2009-01-20
申请人： Claude L. Bertin , Eliodor G. Ghenciu , Thomas Rueckes , H. Montgomery Manning
发明人： Claude L. Bertin , Eliodor G. Ghenciu , Thomas Rueckes , H. Montgomery Manning
IPC分类号： H01L29/06 , B82Y10/00 , G11C11/56 , G11C13/00 , G11C13/02 , H01L27/102 , H01L29/12 , H01L29/16 , H01L51/00 , H01L21/822 , H01L23/525 , H01L27/06 , H01L27/12
CPC分类号： G11C13/0097 , B82Y10/00 , G11C11/56 , G11C13/0007 , G11C13/003 , G11C13/004 , G11C13/0069 , G11C13/025 , G11C2013/009 , G11C2213/19 , G11C2213/35 , G11C2213/71 , G11C2213/72 , G11C2213/75 , G11C2213/79 , H01L21/8221 , H01L23/5256 , H01L27/0688 , H01L27/1021 , H01L27/115 , H01L27/1203 , H01L29/0665 , H01L29/0673 , H01L29/0676 , H01L29/068 , H01L29/125 , H01L29/1606 , H01L29/861 , H01L51/0048 , H01L2924/00011 , H01L2924/0002 , H01L2924/00 , H01L2224/80001
摘要： A non-volatile nanotube switch and memory arrays constructed from these switches are disclosed. A non-volatile nanotube switch includes a conductive terminal and a nanoscopic element stack having a plurality of nanoscopic elements arranged in direct electrical contact, a first comprising a nanotube fabric and a second comprising a carbon material, a portion of the nanoscopic element stack in electrical contact with the conductive terminal. Control circuitry is provided in electrical communication with and for applying electrical stimulus to the conductive terminal and to at least a portion of the nanoscopic element stack. At least one of the nanoscopic elements is capable of switching among a plurality of electronic states in response to a corresponding electrical stimuli applied by the control circuitry to the conductive terminal and the portion of the nanoscopic element stack. For each electronic state, the nanoscopic element stack provides an electrical pathway of corresponding resistance.
摘要翻译：公开了一种由这些开关构成的非易失性纳米管开关和存储器阵列。非挥发性纳米管开关包括导电端子和纳米级元件堆叠，其具有以直接电接触排列的多个纳米级元件，第一纳米管构件包括纳米管织物，第二纳米管结构包括碳材料，纳米级元件堆叠的一部分在电气与导电端子接触。提供控制电路与导电端子和纳米级元件堆叠的至少一部分电连通并用于向导电端子施加电刺激。纳米级元件中的至少一个能够响应于由控制电路施加到导电端子和纳米级元件堆叠的部分的相应的电刺激而能够在多个电子状态之间切换。对于每个电子状态，纳米级元件堆叠提供相应电阻的电路径。

5. 发明授权

US08183665B2 Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same 有权
标题翻译：非挥发性纳米管二极管和非易失性纳米管块及使用其的系统及其制造方法
公开(公告)号：US08183665B2
公开(公告)日：2012-05-22
申请号：US12273807
申请日：2008-11-19
申请人： Claude L. Bertin , Eliodor G. Ghenciu , Thomas Rueckes , H. Montgomery Manning
发明人： Claude L. Bertin , Eliodor G. Ghenciu , Thomas Rueckes , H. Montgomery Manning
IPC分类号： G11C11/56 , H01L23/52
CPC分类号： G11C13/025 , B82Y10/00 , G11C13/003 , G11C2213/19 , G11C2213/71 , G11C2213/72 , G11C2213/78 , H01L21/8221 , H01L23/5256 , H01L27/0688 , H01L27/1021 , H01L27/1203 , H01L29/1606 , H01L2924/00011 , H01L2924/0002 , Y10S977/943 , H01L2924/00 , H01L2224/80001
摘要： A high-density memory array. A plurality of word lines and a plurality of bit lines are arranged to access a plurality of memory cells. Each memory cell includes a first conductive terminal and an article in physical and electrical contact with the first conductive terminal, the article comprising a plurality of nanoscopic particles. A second conductive terminal is in physical and electrical contact with the article. Select circuitry is arranged in electrical communication with a bit line of the plurality of bit lines and one of the first and second conductive terminals. The article has a physical dimension that defines a spacing between the first and second conductive terminals such that the nanotube article is interposed between the first and second conducive terminals. A logical state of each memory cell is selectable by activation only of the bit line and the word line connected to that memory cell.
摘要翻译：高密度存储阵列。多个字线和多个位线被布置为访问多个存储单元。每个存储单元包括第一导电端子和与第一导电端子物理和电接触的制品，所述制品包括多个纳米级颗粒。第二导电端子与物品物理和电接触。选择电路布置成与多个位线的位线和第一和第二导电端子之一电连通。该制品具有限定第一和第二导电端子之间的间隔的物理尺寸，使得纳米管制品插入在第一和第二导电端子之间。每个存储器单元的逻辑状态仅通过仅连接到该存储器单元的位线和字线的激活来选择。

6. 发明授权

US08134220B2 Two-terminal nanotube devices including a nanotube bridge and methods of making same 有权
标题翻译：包括纳米管桥的两端纳米管装置及其制造方法
公开(公告)号：US08134220B2
公开(公告)日：2012-03-13
申请号：US12139910
申请日：2008-06-16
申请人： H. Montgomery Manning , Thomas Rueckes , Jonathan W. Ward , Brent M. Segal
发明人： H. Montgomery Manning , Thomas Rueckes , Jonathan W. Ward , Brent M. Segal
IPC分类号： G11C11/00 , H01L23/52 , H01L21/02
CPC分类号： H01L51/0591 , B82Y10/00 , G11C13/025 , H01L51/0048 , Y10S977/943
摘要： Nanotube switching devices having nanotube bridges are disclosed. Two-terminal nanotube switches include conductive terminals extending up from a substrate and defining a void in the substrate. Nantoube articles are suspended over the void or form a bottom surface of a void. The nanotube articles are arranged to permanently contact at least a portion of the conductive terminals. An electrical stimulus circuit in communication with the conductive terminals is used to generate and apply selected waveforms to induce a change in resistance of the device between relatively high and low resistance values. Relatively high and relatively low resistance values correspond to states of the device. A single conductive terminal and a interconnect line may be used. The nanotube article may comprise a patterned region of nanotube fabric, having an active region with a relatively high or relatively low resistance value. Methods of making each device are disclosed.
摘要翻译：公开了具有纳米管桥的纳米管开关器件。两端纳米管开关包括从衬底向上延伸并且在衬底中限定空隙的导电端子。纳米管制品悬浮在空隙上或形成空隙的底部表面。纳米管制品布置成永久地接触导电端子的至少一部分。使用与导电端子连通的电刺激电路来产生并施加所选择的波形以引起器件在较高和较低电阻值之间的电阻变化。相对较高且相对较低的电阻值对应于器件的状态。可以使用单个导电端子和互连线。纳米管制品可以包括具有相对较高或相对低的电阻值的有源区的纳米管织物的图案化区域。公开了制造每个装置的方法。

7. 发明授权

US09574290B2 Methods for arranging nanotube elements within nanotube fabrics and films 有权
标题翻译：在纳米管织物和薄膜中排列纳米管元件的方法
公开(公告)号：US09574290B2
公开(公告)日：2017-02-21
申请号：US12945501
申请日：2010-11-12
申请人： David A. Roberts , Hao-Yu Lin , Thomas R. Bengtson , Thomas Rueckes , Karl Robinson , H. Montgomery Manning , Rahul Sen , Michel Pires Monteiro
发明人： David A. Roberts , Hao-Yu Lin , Thomas R. Bengtson , Thomas Rueckes , Karl Robinson , H. Montgomery Manning , Rahul Sen , Michel Pires Monteiro
IPC分类号： B05D3/12 , D04H1/4382 , B05D3/00 , C01B31/02 , B82Y40/00 , B82Y30/00
CPC分类号： D04H1/4382 , B05D3/007 , B05D3/12 , B82Y30/00 , B82Y40/00 , C01B32/168
摘要： A method for arranging nanotube elements within nanotube fabric layers and films is disclosed. A directional force is applied over a nanotube fabric layer to render the fabric layer into an ordered network of nanotube elements. That is, a network of nanotube elements drawn together along their sidewalls and substantially oriented in a uniform direction. In some embodiments this directional force is applied by rolling a cylindrical element over the fabric layer. In other embodiments this directional force is applied by passing a rubbing material over the surface of a nanotube fabric layer. In other embodiments this directional force is applied by running a polishing material over the nanotube fabric layer for a predetermined time. Exemplary rolling, rubbing, and polishing apparatuses are also disclosed.
摘要翻译：公开了一种在纳米管织物层和膜内布置纳米管元件的方法。在纳米管织物层上施加定向力以使织物层成为纳米管元件的有序网络。也就是说，一个纳米管元件的网络沿其侧壁一起拉伸并且基本上沿均匀的方向取向。在一些实施例中，通过将圆柱形元件滚动在织物层上而施加该定向力。在其它实施例中，通过将摩擦材料通过纳米管织物层的表面来施加该定向力。在其他实施例中，通过在纳米管织物层上运行抛光材料预定时间来施加该定向力。还公开了示例性的滚动，摩擦和抛光装置。

8. 发明授权

US08895950B2 Methods for passivating a carbonic nanolayer 有权
标题翻译：钝化碳纳米层的方法
公开(公告)号：US08895950B2
公开(公告)日：2014-11-25
申请号：US14020095
申请日：2013-09-06
申请人： Thomas Rueckes , H. Montgomery Manning , Rahul Sen
发明人： Thomas Rueckes , H. Montgomery Manning , Rahul Sen
IPC分类号： H01L29/04 , H01L47/00 , H01L29/00 , H01L29/16
CPC分类号： H01L51/0048 , B82Y10/00 , B82Y40/00 , H01L21/02203 , H01L21/02527 , H01L21/02606 , H01L21/02628 , H01L29/0665 , H01L29/0669 , H01L29/1029 , H01L29/1606 , H01L45/1233 , H01L45/149 , H01L45/1608 , H01L51/0003 , H01L51/0007 , H01L51/0591 , H01L51/107 , Y10S977/842
摘要： Methods for passivating a carbonic nanolayer (that is, material layers comprised of low dimensional carbon structures with delocalized electrons such as carbon nanotubes and nanoscopic graphene flecks) to prevent or otherwise limit the encroachment of another material layer are disclosed. In some embodiments, a sacrificial material is implanted within a porous carbonic nanolayer to fill in the voids within the porous carbonic nanolayer while one or more other material layers are applied over or alongside the carbonic nanolayer. Once the other material layers are in place, the sacrificial material is removed. In other embodiments, a non-sacrificial filler material (selected and deposited in such a way as to not impair the switching function of the carbonic nanolayer) is used to form a barrier layer within a carbonic nanolayer. In other embodiments, carbon structures are combined with and nanoscopic particles to limit the porosity of a carbonic nanolayer.
摘要翻译：公开了用于钝化碳纳米层的方法（即，由具有离域电子的低维碳结构（例如碳纳米管和纳米级石墨烯斑点）构成的材料层）以防止或以其他方式限制另一材料层的侵入。在一些实施方案中，将牺牲材料注入多孔碳纳米层内以填充多孔碳纳米层内的空隙，同时将一种或多种其它材料层涂覆在碳纳米层上或旁边。一旦其它材料层就位，则去除牺牲材料。在其它实施方案中，使用非牺牲填料（以不损害碳纳米层的切换功能的方式选择和沉积）在碳纳米层内形成阻挡层。在其它实施方案中，碳结构与纳米级颗粒结合以限制碳纳米层的孔隙率。

9. 发明申请

US20110163290A1 METHODS FOR PASSIVATING A CARBONIC NANOLAYER 有权
标题翻译：用于钝化碳纳米管的方法
公开(公告)号：US20110163290A1
公开(公告)日：2011-07-07
申请号：US12910714
申请日：2010-10-22
申请人： Thomas Rueckes , H. Montgomery Manning , Rahul Sen
发明人： Thomas Rueckes , H. Montgomery Manning , Rahul Sen
IPC分类号： H01L29/06 , H01L21/56 , H01L21/20 , B82Y99/00 , B82Y40/00
CPC分类号： B82Y30/00 , G11C2213/16 , H01L27/101
摘要： Methods for passivating a carbonic nanolayer (that is, material layers comprised of low dimensional carbon structures with delocalized electrons such as carbon nanotubes and nano-scopic graphene flecks) to prevent or otherwise limit the encroachment of another material layer are disclosed. In some embodiments, a sacrificial material is implanted within a porous carbonic nanolayer to fill in the voids within the porous carbonic nanolayer while one or more other material layers are applied over or alongside the carbonic nanolayer. Once the other material layers are in place, the sacrificial material is removed. In other embodiments, a non-sacrificial filler material (selected and deposited in such a way as to not impair the switching function of the carbonic nanolayer) is used to form a barrier layer within a carbonic nanolayer. In other embodiments, carbon structures are combined with and nanoscopic particles to limit the porosity of a carbonic nanolayer.
摘要翻译：公开了用于钝化碳纳米层（即，由具有诸如碳纳米管和纳米表面石墨烯斑点的离域电子的低维碳结构构成的材料层）以防止或以其它方式限制另一材料层的侵蚀的方法。在一些实施方案中，将牺牲材料注入多孔碳纳米层内以填充多孔碳纳米层内的空隙，同时将一种或多种其它材料层涂覆在碳纳米层上或旁边。一旦其它材料层就位，则去除牺牲材料。在其它实施方案中，使用非牺牲填料（以不损害碳纳米层的切换功能的方式选择和沉积）在碳纳米层内形成阻挡层。在其它实施方案中，碳结构与纳米级颗粒结合以限制碳纳米层的孔隙率。

10. 发明授权

US09422651B2 Methods for arranging nanoscopic elements within networks, fabrics, and films 有权
标题翻译：在网络，织物和薄膜中布置纳米级元件的方法
公开(公告)号：US09422651B2
公开(公告)日：2016-08-23
申请号：US13076152
申请日：2011-03-30
申请人： David A. Roberts , Hao-Yu Lin , Thomas R. Bengtson , Thomas Rueckes , Karl Robinson , H. Montgomery Manning , Rahul Sen , Michel Monteiro
发明人： David A. Roberts , Hao-Yu Lin , Thomas R. Bengtson , Thomas Rueckes , Karl Robinson , H. Montgomery Manning , Rahul Sen , Michel Monteiro
IPC分类号： D04H1/4382 , C01B31/02 , B82Y30/00 , B82Y40/00 , D04H1/4242 , D04H1/4391 , D04H1/74 , D01G19/00
CPC分类号： B05D1/40 , B05D1/005 , B05D1/02 , B05D1/18 , B05D1/28 , B05D1/32 , B82Y30/00 , B82Y40/00 , C01B32/168 , D04H1/4242 , D04H1/4382 , D04H1/4391 , D04H1/74
摘要： A method for arranging nanotube elements within nanotube fabric layers and films is disclosed. A directional force is applied over a nanotube fabric layer to render the fabric layer into an ordered network of nanotube elements. That is, a network of nanotube elements drawn together along their sidewalls and substantially oriented in a uniform direction. In some embodiments this directional force is applied by rolling a cylindrical element over the fabric layer. In other embodiments this directional force is applied by passing a rubbing material over the surface of a nanotube fabric layer. In other embodiments this directional force is applied by running a polishing material over the nanotube fabric layer for a predetermined time. Exemplary rolling, rubbing, and polishing apparatuses are also disclosed.
摘要翻译：公开了一种在纳米管织物层和膜内布置纳米管元件的方法。在纳米管织物层上施加定向力以使织物层成为纳米管元件的有序网络。也就是说，一个纳米管元件的网络沿其侧壁一起拉伸并且基本上沿均匀的方向取向。在一些实施例中，通过将圆柱形元件滚动在织物层上而施加该定向力。在其它实施例中，通过将摩擦材料通过纳米管织物层的表面来施加该定向力。在其他实施例中，通过在纳米管织物层上运行抛光材料预定时间来施加该定向力。还公开了示例性的滚动，摩擦和抛光装置。

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