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1. 发明申请

US20090242126A1 EDGE ETCHING APPARATUS FOR ETCHING THE EDGE OF A SILICON WAFER 审中-公开
标题翻译：蚀刻硅片边缘的边缘蚀刻装置
公开(公告)号：US20090242126A1
公开(公告)日：2009-10-01
申请号：US12415274
申请日：2009-03-31
申请人： Henry F. Erk , Peter D. Albrecht , Eugene R. Hollander , Thomas E. Doane , Judith A. Schmidt , Roland Vandamme , Guoqiang (David) Zhang
发明人： Henry F. Erk , Peter D. Albrecht , Eugene R. Hollander , Thomas E. Doane , Judith A. Schmidt , Roland Vandamme , Guoqiang (David) Zhang
IPC分类号： C23F1/08
CPC分类号： H01L21/02021 , H01L21/02019 , H01L21/30608 , H01L21/67086 , H01L21/67313 , Y10T428/21 , Y10T428/219
摘要： The present disclosure generally relates to the manufacture of silicon wafers, and more particularly to edge etching apparatus and methods for etching the edge of a silicon wafer.
摘要翻译：本公开一般涉及硅晶片的制造，更具体地涉及用于蚀刻硅晶片边缘的边缘蚀刻装置和方法。

2. 发明申请

US20120028555A1 Grinding Tool For Trapezoid Grinding Of A Wafer 审中-公开
标题翻译：研磨工具用于梯形磨削的晶圆
公开(公告)号：US20120028555A1
公开(公告)日：2012-02-02
申请号：US12847015
申请日：2010-07-30
申请人： Guoqiang David Zhang , Roland Vandamme , Peter D. Albrecht
发明人： Guoqiang David Zhang , Roland Vandamme , Peter D. Albrecht
IPC分类号： B24B27/00
CPC分类号： B24D5/14 , B24B9/065
摘要： A grinding tool for trapezoid grinding of a wafer on a profiling machine includes an annular wheel including a central hole adapted for mounting the wheel on a spindle. The wheel includes at least two grooves disposed at an outer edge of the wheel and the grooves are sized for receiving an outer edge of the wafer. At least one of the grooves is adapted for rough grinding of the wafer. At least one other of the grooves is adapted for fine grinding of the wafer.
摘要翻译：用于在成形机上梯形磨削晶片的研磨工具包括环形轮，其包括适于将轮安装在心轴上的中心孔。车轮包括设置在车轮的外边缘处的至少两个槽，并且槽的尺寸适于接收晶片的外边缘。至少一个凹槽适于对晶片进行粗磨。至少另一个凹槽适用于晶片的细磨。

3. 发明申请

US20120025353A1 Semiconductor And Solar Wafers 有权
标题翻译：半导体和太阳能晶片
公开(公告)号：US20120025353A1
公开(公告)日：2012-02-02
申请号：US12847011
申请日：2010-07-30
申请人： Guoqiang David Zhang , Roland Vandamme
发明人： Guoqiang David Zhang , Roland Vandamme
IPC分类号： H01L29/06
CPC分类号： H01L21/76251 , B24B9/065
摘要： A silicon-on-insulator or bonded wafer includes an upper portion having a trapezoid shape in cross-section and a lower portion having an outer peripheral edge having a curved shape.
摘要翻译：绝缘体上或贴合晶片包括横截面呈梯形形状的上部和具有弯曲形状的外周边缘的下部。

4. 发明授权

US08066553B2 Wafer clamping device for a double side grinder 有权
标题翻译：用于双面研磨机的晶片夹紧装置
公开(公告)号：US08066553B2
公开(公告)日：2011-11-29
申请号：US10598851
申请日：2005-01-20
申请人： Milind S. Bhagavat , Puneet Gupta , Roland Vandamme , Takuto Kazama , Noriyuki Tachi
发明人： Milind S. Bhagavat , Puneet Gupta , Roland Vandamme , Takuto Kazama , Noriyuki Tachi
IPC分类号： B24B41/06
CPC分类号： B24B7/228 , B24B7/17 , B24B37/08 , B24B37/28 , B24B41/061
摘要： A hydrostatic pad for use in holding a semiconductor wafer during grinding of the wafer by grinding wheels. The pad includes hydrostatic pockets formed in a face of the body directly opposed to the wafer. The pockets are adapted for receiving fluid through the body and into the pockets to provide a barrier between the body face and the workpiece while still applying pressure to hold the workpiece during grinding. The hydrostatic pads allow the wafer to rotate relative to the pads about their common axis. The pockets are oriented to reduce hydrostatic bending moments that are produced in the wafer when the grinding wheels shift or tilt relative to the hydrostatic pads, helping prevent nanotopology degradation of surfaces of the wafer commonly caused by shift and tilt of the grinding wheels.
摘要翻译：一种静压垫，用于在通过研磨轮磨削晶片时保持半导体晶片。衬垫包括形成在与晶片直接相对的身体的表面中的静水压凹坑。凹穴适于接收流体通过主体并进入凹穴，以在主体面和工件之间提供阻挡物，同时在研磨期间仍然施加压力以保持工件。静压垫允许晶片相对于垫围绕其公共轴线旋转。当砂轮相对于静液压垫移动或倾斜时，袋被定向成减小在晶片中产生的流体静力弯矩，有助于防止通常由砂轮的移动和倾斜引起的晶片表面的纳米拓扑降解。

5. 发明申请

US20070178807A1 Wire saw ingot slicing system and method with ingot preheating, web preheating, slurry temperature control and/or slurry flow rate control 失效
标题翻译：线锯锭切割系统和方法，其具有锭预热，幅材预热，浆料温度控制和/或浆料流速控制
公开(公告)号：US20070178807A1
公开(公告)日：2007-08-02
申请号：US11621920
申请日：2007-01-10
申请人： Puneet Gupta , Milind Kulkarni , Carlo Zavattari , Roland Vandamme
发明人： Puneet Gupta , Milind Kulkarni , Carlo Zavattari , Roland Vandamme
IPC分类号： B24B51/00 , B28D1/06 , B24B1/00
CPC分类号： B28D5/007 , B28D5/0076 , Y02P70/179
摘要： A system and method for slicing an ingot into wafers using the wire saw process. A slurry collection system collects and supplies slurry to a slurry handling system for controlling temperatures and/or flow rates of the slurry thereby providing slurry output at a controlled temperature and/or a controlled flow rate to slicing system for cutting the ingot, which may be preheated.
摘要翻译：一种使用线锯工艺将晶锭切割成晶片的系统和方法。浆料收集系统收集并将浆料供应到浆料处理系统中，用于控制浆料的温度和/或流速，从而在受控温度和/或受控流速下提供浆料输出到切割锭的切片系统，其可以是预热。

6. 发明申请

US20080153391A1 METHOD OF POLISHING A SEMICONDUCTOR WAFER 有权
标题翻译：抛光半导体波形的方法
公开(公告)号：US20080153391A1
公开(公告)日：2008-06-26
申请号：US11614129
申请日：2006-12-21
申请人： Henry Frank Erk , Judith Ann Schmit , Roland Vandamme
发明人： Henry Frank Erk , Judith Ann Schmit , Roland Vandamme
IPC分类号： B24B1/00
CPC分类号： B24B9/065 , B24B37/042
摘要： Semiconductor wafers have a front surface, a back surface, a notch, and an edge. A method of polishing a wafer includes polishing at least one of the surfaces and the notch of the wafer using a polishing pad and slurry. At least one surface of the wafer is cleaned of residual slurry. The cleaned surface is grasped by applying a vacuum to the cleaned surface of the wafer using a vacuum chuck. Edge of the wafer is polished using a pad and slurry while the wafer is grasped by the vacuum chuck.
摘要翻译：半导体晶片具有前表面，后表面，凹口和边缘。抛光晶片的方法包括使用抛光垫和浆料抛光晶片的至少一个表面和凹口。清洁晶片的至少一个表面残留的浆液。通过使用真空吸盘将真空施加到清洁的晶片表面来抓住清洁的表面。使用衬垫和浆料抛光晶片的边缘，同时通过真空吸盘把持晶片。

7. 发明授权

US07559825B2 Method of polishing a semiconductor wafer 有权
标题翻译：抛光半导体晶片的方法
公开(公告)号：US07559825B2
公开(公告)日：2009-07-14
申请号：US11614129
申请日：2006-12-21
申请人： Henry Frank Erk , Judith Ann Schmit , Roland Vandamme
发明人： Henry Frank Erk , Judith Ann Schmit , Roland Vandamme
IPC分类号： B24B1/00
CPC分类号： B24B9/065 , B24B37/042
摘要： Semiconductor wafers have a front surface, a back surface, a notch, and an edge. A method of polishing a wafer includes polishing at least one of the surfaces and the notch of the wafer using a polishing pad and slurry. At least one surface of the wafer is cleaned of residual slurry. The cleaned surface is grasped by applying a vacuum to the cleaned surface of the wafer using a vacuum chuck. Edge of the wafer is polished using a pad and slurry while the wafer is grasped by the vacuum chuck.
摘要翻译：半导体晶片具有前表面，后表面，凹口和边缘。抛光晶片的方法包括使用抛光垫和浆料抛光晶片的至少一个表面和凹口。清洁晶片的至少一个表面残留的浆液。通过使用真空吸盘将真空施加到清洁的晶片表面来抓住清洁的表面。使用衬垫和浆料抛光晶片的边缘，同时通过真空吸盘把持晶片。

8. 发明授权

US07416962B2 Method for processing a semiconductor wafer including back side grinding 失效
标题翻译：包括背面研磨的半导体晶片的处理方法
公开(公告)号：US07416962B2
公开(公告)日：2008-08-26
申请号：US10233117
申请日：2002-08-30
申请人： Wesley Harrison , Roland Vandamme , David Gore
发明人： Wesley Harrison , Roland Vandamme , David Gore
IPC分类号： H01L21/30
CPC分类号： H01L21/02052 , H01L21/02016 , H01L21/02024
摘要： A method is provided for processing the back side of a semiconductor wafer after the wafer has been lapped. The process includes grinding the back side of the wafer to remove wafer material, to substantially eliminate lap damage from the back side of the wafer. The back side of the wafer may then be cleaned, etched, and polished, after which the front side of the wafer is polished. The back side grinding may be accomplished after the lapping without any other step of substantial removal of wafer material. The polishing of the back side of the wafer may be performed with a CMP machine and may produce a specular surface, visually free of damage under haze lamp inspection, with removal of about 0.5 microns of wafer material. After polishing the front side of the wafer, an epitaxial layer may be produced on the front side of the wafer.
摘要翻译：提供了在研磨晶片之后对半导体晶片的背面进行处理的方法。该方法包括研磨晶片的背面以去除晶片材料，以基本上消除从晶片背面的搭接损伤。然后可以清洁，蚀刻和抛光晶片的背面，之后抛光晶片的正面。背面研磨可以在研磨之后完成，而没有任何其他步骤基本上除去晶片材料。可以用CMP机器对晶片的背面进行抛光，并且可以产生镜面，在雾度灯检查下视觉上没有损坏，同时去除约0.5微米的晶片材料。在抛光晶片的前侧之后，可以在晶片的正面上产生外延层。

9. 发明申请

US20080020684A1 Wafer Clamping Device For A Double Side Grinder 有权
标题翻译：双面磨床用晶片夹紧装置
公开(公告)号：US20080020684A1
公开(公告)日：2008-01-24
申请号：US10598851
申请日：2005-01-20
申请人： Milind Bhagavat , Puneet Gupta , Roland Vandamme , Takuto Kazama , Noriyuki Tachi
发明人： Milind Bhagavat , Puneet Gupta , Roland Vandamme , Takuto Kazama , Noriyuki Tachi
IPC分类号： B24B37/04
CPC分类号： B24B7/228 , B24B7/17 , B24B37/08 , B24B37/28 , B24B41/061
摘要： A hydrostatic pad for use in holding a semiconductor wafer during grinding of the wafer by grinding wheels. The pad includes hydrostatic pockets formed in a face of the body directly opposed to the wafer The pockets are adapted for receiving fluid through the body and into the pockets to provide a barrier between the body face and the workpiece while still applying pressure to hold the workpiece during grinding. The hydrostatic pads allow the wafer to rotate relative to the pads about their common axis. The pockets are oriented to reduce hydrostatic bending moments that are produced in the wafer when the grinding wheels shift or tilt relative to the hydrostatic pads, helping prevent nanotopology degradation of surfaces of the wafer commonly caused by shift and tilt of the grinding wheels.
摘要翻译：一种静压垫，用于在通过研磨轮磨削晶片时保持半导体晶片。衬垫包括形成在与晶片直接相对的身体的表面上的静压袋。凹穴适于接收通过本体并进入凹穴中的流体，以在身体表面和工件之间提供屏障，同时仍然施加压力以保持工件在研磨过程中。静压垫允许晶片相对于垫围绕其公共轴线旋转。当砂轮相对于静液压垫移动或倾斜时，袋被定向成减小在晶片中产生的流体静力弯矩，有助于防止通常由砂轮的移动和倾斜引起的晶片表面的纳米拓扑降解。

10. 发明申请

US20070179660A1 Double side wafer grinder and methods for assessing workpiece nanotopology 有权
标题翻译：双面晶圆研磨机和评估工件纳米拓扑学的方法
公开(公告)号：US20070179660A1
公开(公告)日：2007-08-02
申请号：US11617433
申请日：2006-12-28
申请人： Sumeet Bhagavat , Milind Bhagavat , Roland Vandamme , Tomomi Komura
发明人： Sumeet Bhagavat , Milind Bhagavat , Roland Vandamme , Tomomi Komura
IPC分类号： B24B51/00 , B24B49/00 , B24B7/30 , B24B7/00
CPC分类号： B24B37/28 , B24B7/228 , B24B49/02
摘要： A double side grinder comprises a pair of grinding wheels and a pair of hydrostatic pads operable to hold a flat workpiece (e.g., semiconductor wafer) so that part of the workpiece is positioned between the grinding wheels and part of the workpiece is positioned between the hydrostatic pads. At least one sensor measures a distance between the workpiece and the respective sensor for assessing nanotopology of the workpiece. In a method of the invention, a distance to the workpiece is measured during grinding and used to assess nanotopology of the workpiece. For instance, a finite element structural analysis of the workpiece can be performed using sensor data to derive at least one boundary condition. The nanotopology assessment can begin before the workpiece is removed from the grinder, providing rapid nanotopology feedback. A spatial filter can be used to predict the likely nanotopology of the workpiece after further processing.
摘要翻译：双面研磨机包括一对砂轮和一对静压垫，其可操作以保持平坦工件（例如，半导体晶片），使得工件的一部分位于砂轮之间并且部分工件位于静水压垫至少一个传感器测量工件和相应传感器之间的距离，用于评估工件的纳米拓扑学。在本发明的方法中，在研磨期间测量与工件的距离，并用于评估工件的纳米拓扑学。例如，可以使用传感器数据来执行工件的有限元结构分析以导出至少一个边界条件。纳米技术评估可以在从研磨机上取出工件之前开始，提供快速的纳米拓扑反馈。可以使用空间滤波器来进一步处理后预测工件的可能纳米拓扑。

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