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    • 1. 发明申请
    • Double side wafer grinder and methods for assessing workpiece nanotopology
    • 双面晶圆研磨机和评估工件纳米拓扑学的方法
    • US20070179660A1
    • 2007-08-02
    • US11617433
    • 2006-12-28
    • Sumeet BhagavatMilind BhagavatRoland VandammeTomomi Komura
    • Sumeet BhagavatMilind BhagavatRoland VandammeTomomi Komura
    • B24B51/00B24B49/00B24B7/30B24B7/00
    • B24B37/28B24B7/228B24B49/02
    • A double side grinder comprises a pair of grinding wheels and a pair of hydrostatic pads operable to hold a flat workpiece (e.g., semiconductor wafer) so that part of the workpiece is positioned between the grinding wheels and part of the workpiece is positioned between the hydrostatic pads. At least one sensor measures a distance between the workpiece and the respective sensor for assessing nanotopology of the workpiece. In a method of the invention, a distance to the workpiece is measured during grinding and used to assess nanotopology of the workpiece. For instance, a finite element structural analysis of the workpiece can be performed using sensor data to derive at least one boundary condition. The nanotopology assessment can begin before the workpiece is removed from the grinder, providing rapid nanotopology feedback. A spatial filter can be used to predict the likely nanotopology of the workpiece after further processing.
    • 双面研磨机包括一对砂轮和一对静压垫,其可操作以保持平坦工件(例如,半导体晶片),使得工件的一部分位于砂轮之间并且部分工件位于静水压 垫 至少一个传感器测量工件和相应传感器之间的距离,用于评估工件的纳米拓扑学。 在本发明的方法中,在研磨期间测量与工件的距离,并用于评估工件的纳米拓扑学。 例如,可以使用传感器数据来执行工件的有限元结构分析以导出至少一个边界条件。 纳米技术评估可以在从研磨机上取出工件之前开始,提供快速的纳米拓扑反馈。 可以使用空间滤波器来进一步处理后预测工件的可能纳米拓扑。
    • 4. 发明申请
    • MEMS In-Plane Resonators
    • MEMS平面谐振器
    • US20120112765A1
    • 2012-05-10
    • US12853619
    • 2010-08-10
    • Andrew SparksMilind Bhagavat
    • Andrew SparksMilind Bhagavat
    • G01R27/04G01H13/00H01L41/04
    • G01N29/022G01N29/036G01N2291/014G01N2291/0256G01N2291/0422H03H9/1057H03H9/2463H03H2009/02511
    • MEMS in-plane resonators include a substrate wafer, at least one resonant mass supported by the substrate wafer and configured to resonate substantially in-plane, and at least one transducer coupled to the at least one resonant mass for at least one of driving and sensing in-plane movement of the at least one resonant mass, wherein at least part of one surface of the resonant mass is configured for exposure to an external environment and wherein the at least one transducer is isolated from the external environment. Such MEMS in-plane resonators may be fabricated using conventional surface micromachining techniques and high-volume wafer fabrication processes and may be configured for liquid applications (e.g., viscometry, densitometry, chemical/biological sensing), gas sensing (e.g., where a polymer film is added to the sensor surface, further degrading the damping performance), or other applications.
    • MEMS平面内谐振器包括衬底晶片,由衬底晶片支撑并被配置为基本上共面谐振的至少一个谐振块,以及耦合到至少一个谐振块的至少一个谐振器,用于至少一个驱动和感测 所述至少一个谐振质量块的平面内运动,其中所述谐振块的一个表面的至少一部分被配置为暴露于外部环境,并且其中所述至少一个换能器与所述外部环境隔离。 这样的MEMS平面内谐振器可以使用传统的表面微加工技术和大容量晶片制造工艺来制造,并且可以被配置用于液体应用(例如,粘度测定,密度测定,化学/生物感测),气体感测(例如,其中聚合物膜 被添加到传感器表面,进一步降低阻尼性能)或其他应用。
    • 6. 发明授权
    • Capped wafer method and apparatus
    • 带盖的晶圆方法和装置
    • US07981723B2
    • 2011-07-19
    • US12268605
    • 2008-11-11
    • Xue'en YangMilind BhagavatErik Tarvin
    • Xue'en YangMilind BhagavatErik Tarvin
    • H01L21/44H01L21/48H01L21/50
    • B81C1/00873B81C1/00269B81C2203/0118B81C2203/019H01L23/10H01L2924/16235
    • A capped wafer includes a device wafer and an opposing cap wafer with an annular glass frit disposed between the device wafer and the cap wafer. The glass frit and the opposing wafers define a sealed volume that encloses the capped devices, and the glass frit may support the wafer cap during removal of excess wafer cap material from the capped wafer. A method of fabricating a capped wafer includes fabricating an annular intermediate layer between a device wafer and a cap wafer. In an alternate embodiment, a plurality of unsingulated dice each contains bond pads along a single edge and are arranged on a device wafer in an alternating order so that the bond pads of a first die are adjacent to the bond pads of a second die. Removing excess cap wafer material involves making a first cut in the cap wafer near a first row of bond pads and a second cut near the adjacent row of bond pads, such that a strip of wafer cap material is suspended from portions of an underlying supporting member near the edge of the capped wafer, and then removing the wafer cap material suspended from the portions of the supporting glass frit using an adhesive tape.
    • 封盖晶片包括器件晶片和相对的盖晶片,其具有设置在器件晶片和盖晶片之间的环形玻璃料。 玻璃料和相对的晶片限定了封闭封盖器件的密封体积,并且玻璃料可以在从封盖晶片去除多余的晶片盖材料期间支撑晶片盖。 制造封盖晶片的方法包括在器件晶片和盖晶片之间制造环形中间层。 在替代实施例中,多个未插拔的裸片各自包含沿着单个边缘的接合焊盘,并且以交替顺序布置在器件晶片上,使得第一管芯的接合焊盘与第二管芯的接合焊盘相邻。 去除多余的盖晶片材料包括在第一排接合焊盘附近在盖晶片中进行第一切割,并且在相邻排的接合焊盘附近进行第二切割,使得晶片盖材料条从下面的支撑构件的部分悬挂 靠近加盖晶片的边缘,然后使用胶带从支撑玻璃料的部分上移除晶片盖材料。
    • 7. 发明授权
    • MEMS in-plane resonators
    • MEMS平面内谐振器
    • US08593155B2
    • 2013-11-26
    • US12853619
    • 2010-08-10
    • Andrew SparksMilind Bhagavat
    • Andrew SparksMilind Bhagavat
    • G01R27/04
    • G01N29/022G01N29/036G01N2291/014G01N2291/0256G01N2291/0422H03H9/1057H03H9/2463H03H2009/02511
    • MEMS in-plane resonators include a substrate wafer, at least one resonant mass supported by the substrate wafer and configured to resonate substantially in-plane, and at least one transducer coupled to the at least one resonant mass for at least one of driving and sensing in-plane movement of the at least one resonant mass, wherein at least part of one surface of the resonant mass is configured for exposure to an external environment and wherein the at least one transducer is isolated from the external environment. Such MEMS in-plane resonators may be fabricated using conventional surface micromachining techniques and high-volume wafer fabrication processes and may be configured for liquid applications (e.g., viscometry, densitometry, chemical/biological sensing), gas sensing (e.g., where a polymer film is added to the sensor surface, further degrading the damping performance), or other applications.
    • MEMS平面内谐振器包括衬底晶片,由衬底晶片支撑并被配置为基本上共面谐振的至少一个谐振块,以及耦合到至少一个谐振块的至少一个谐振器,用于至少一个驱动和感测 所述至少一个谐振质量块的平面内运动,其中所述谐振块的一个表面的至少一部分被配置为暴露于外部环境,并且其中所述至少一个换能器与所述外部环境隔离。 这样的MEMS平面内谐振器可以使用传统的表面微加工技术和大容量晶片制造工艺来制造,并且可以被配置用于液体应用(例如,粘度测定,密度测定,化学/生物感测),气体感测(例如,其中聚合物膜 被添加到传感器表面,进一步降低阻尼性能)或其他应用。