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1. 发明申请

US20090242126A1 EDGE ETCHING APPARATUS FOR ETCHING THE EDGE OF A SILICON WAFER 审中-公开
标题翻译：蚀刻硅片边缘的边缘蚀刻装置
公开(公告)号：US20090242126A1
公开(公告)日：2009-10-01
申请号：US12415274
申请日：2009-03-31
申请人： Henry F. Erk , Peter D. Albrecht , Eugene R. Hollander , Thomas E. Doane , Judith A. Schmidt , Roland Vandamme , Guoqiang (David) Zhang
发明人： Henry F. Erk , Peter D. Albrecht , Eugene R. Hollander , Thomas E. Doane , Judith A. Schmidt , Roland Vandamme , Guoqiang (David) Zhang
IPC分类号： C23F1/08
CPC分类号： H01L21/02021 , H01L21/02019 , H01L21/30608 , H01L21/67086 , H01L21/67313 , Y10T428/21 , Y10T428/219
摘要： The present disclosure generally relates to the manufacture of silicon wafers, and more particularly to edge etching apparatus and methods for etching the edge of a silicon wafer.
摘要翻译：本公开一般涉及硅晶片的制造，更具体地涉及用于蚀刻硅晶片边缘的边缘蚀刻装置和方法。

2. 发明授权

US5816274A Apparartus for cleaning semiconductor wafers 失效
标题翻译： Apparartus用于清洁半导体晶圆
公开(公告)号：US5816274A
公开(公告)日：1998-10-06
申请号：US843632
申请日：1997-04-10
申请人： Ronald D. Bartram , Eugene R. Hollander
发明人： Ronald D. Bartram , Eugene R. Hollander
IPC分类号： B08B3/10 , B08B3/12 , H01L21/00 , B08B3/04
CPC分类号： H01L21/67057 , B08B3/10 , B08B3/12 , Y10S134/902
摘要： Apparatus for cleaning semiconductor wafers comprises a tank for containing a liquid wherein the liquid has an upper surface. A wafer holder holds the semiconductor wafer in the tank with at least a portion of the semiconductor wafer being immersed in the liquid within the tank. A wafer-moving mechanism is constructed for engaging the semiconductor wafer in the tank to rotate the semiconductor wafer and to reciprocate the semiconductor wafer so that at least a central region of the wafer repeatedly passes through the surface of the liquid. The wafer-moving mechanism comprises first and second surfaces engageable with the semiconductor wafer and rotatable about respective first and second axes of rotation for rotating the wafer.
摘要翻译：用于清洁半导体晶片的装置包括用于容纳液体的罐，其中液体具有上表面。晶片保持器将半导体晶片保持在槽中，其中半导体晶片的至少一部分浸入在罐内的液体中。晶片移动机构被构造用于将半导体晶片接合在槽中以旋转半导体晶片并使半导体晶片往复运动，使得晶片的至少中心区域反复通过液体的表面。晶片移动机构包括可与半导体晶片接合的第一和第二表面，并可围绕相应的第一和第二旋转轴线旋转以旋转晶片。

3. 发明授权

US5593505A Method for cleaning semiconductor wafers with sonic energy and passing through a gas-liquid-interface 失效
标题翻译：用声能清洗半导体晶片并通过气 - 液界面的方法
公开(公告)号：US5593505A
公开(公告)日：1997-01-14
申请号：US424904
申请日：1995-04-19
申请人： Henry F. Erk , Ronald D. Bartram , Eugene R. Hollander , Jing Chai
发明人： Henry F. Erk , Ronald D. Bartram , Eugene R. Hollander , Jing Chai
IPC分类号： H01L21/304 , B08B3/10 , B08B3/12 , H01L21/00 , H01L21/306
CPC分类号： H01L21/02052 , B08B3/10 , B08B3/12 , H01L21/67057 , Y10S134/902
摘要： A method of cleaning a semiconductor wafer comprises placing liquid in a bath with a gas-liquid-interface defined at the surface of the liquid. A semiconductor wafer is placed in the bath so that it is oriented in a generally upright position with at least part of the wafer being in the liquid and below the gas-liquid-interface. Sonic energy is directed through the liquid. At least one of the position of the semiconductor wafer and the level of liquid in the bath relative to the semiconductor wafer is varied so that the entire surface of the wafer repeatedly passes through the gas-liquid-interface.
摘要翻译：一种清洁半导体晶片的方法包括将液体放置在液体界面界定的液 - 液界面的浴中。将半导体晶片放置在浴中，使得其定向在大致直立的位置，其中晶片的至少一部分在液体中并在气液界面下方。声能被引导通过液体。改变半导体晶片的位置和相对于半导体晶片的液体液位中的至少一个，使得晶片的整个表面反复通过气 - 液界面。

4. 发明申请

US20090247055A1 METHODS FOR ETCHING THE EDGE OF A SILICON WAFER 有权
标题翻译：蚀刻硅片边缘的方法
公开(公告)号：US20090247055A1
公开(公告)日：2009-10-01
申请号：US12415551
申请日：2009-03-31
申请人： Henry F. Erk , Peter D. Albrecht , Eugene R. Hollander , Thomas E. Doane , Judith A. Schmidt , Roland R. Vandamme , Guoqiang (David) Zhang
发明人： Henry F. Erk , Peter D. Albrecht , Eugene R. Hollander , Thomas E. Doane , Judith A. Schmidt , Roland R. Vandamme , Guoqiang (David) Zhang
IPC分类号： B24B1/00 , B24B9/06
CPC分类号： H01L21/02021 , H01L21/02019 , H01L21/30608 , H01L21/67086 , H01L21/67313 , Y10T428/21 , Y10T428/219
摘要： The present disclosure generally relates to the manufacture of silicon wafers, and more particularly to edge etching apparatus and methods for etching the edge of a silicon wafer.
摘要翻译：本公开一般涉及硅晶片的制造，更具体地涉及用于蚀刻硅晶片边缘的边缘蚀刻装置和方法。

5. 发明授权

US5626159A Apparatus for cleaning semiconductor wafers 失效
标题翻译：用于清洁半导体晶片的设备
公开(公告)号：US5626159A
公开(公告)日：1997-05-06
申请号：US686367
申请日：1996-07-25
申请人： Henry F. Erk , Ronald D. Bartram , Eugene R. Hollander , Jing Chai
发明人： Henry F. Erk , Ronald D. Bartram , Eugene R. Hollander , Jing Chai
IPC分类号： H01L21/304 , B08B3/10 , B08B3/12 , H01L21/00 , H01L21/306
CPC分类号： H01L21/02052 , B08B3/10 , B08B3/12 , H01L21/67057 , Y10S134/902
摘要： A method of cleaning a semiconductor wafer comprises placing liquid in a bath with a gas-liquid-interface defined at the surface of the liquid. A semiconductor wafer is placed in the bath so that it is oriented in a generally upright position with at least part of the wafer being in the liquid and below the gas-liquid-interface. Sonic energy is directed through the liquid. At least one of the position of the semiconductor wafer and the level of liquid in the bath relative to the semiconductor wafer is varied so that the entire surface of the wafer repeatedly passes through the gas-liquid-interface.
摘要翻译：一种清洁半导体晶片的方法包括将液体放置在液体界面界定的液 - 液界面的浴中。将半导体晶片放置在浴中，使得其定向在大致直立的位置，其中晶片的至少一部分在液体中并在气液界面下方。声能被引导通过液体。改变半导体晶片的位置和相对于半导体晶片的液体液位中的至少一个，使得晶片的整个表面反复通过气液界面。

6. 发明授权

US08309464B2 Methods for etching the edge of a silicon wafer 有权
标题翻译：蚀刻硅晶片边缘的方法
公开(公告)号：US08309464B2
公开(公告)日：2012-11-13
申请号：US12415551
申请日：2009-03-31
申请人： Henry F. Erk , Peter D. Albrecht , Eugene R. Hollander , Thomas E. Doane , Judith A. Schmidt , Roland R. Vandamme , Guoqiang (David) Zhang
发明人： Henry F. Erk , Peter D. Albrecht , Eugene R. Hollander , Thomas E. Doane , Judith A. Schmidt , Roland R. Vandamme , Guoqiang (David) Zhang
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/02021 , H01L21/02019 , H01L21/30608 , H01L21/67086 , H01L21/67313 , Y10T428/21 , Y10T428/219
摘要： The present disclosure generally relates to the manufacture of silicon wafers, and more particularly to edge etching apparatus and methods for etching the edge of a silicon wafer.
摘要翻译：本公开一般涉及硅晶片的制造，更具体地涉及用于蚀刻硅晶片边缘的边缘蚀刻装置和方法。

7. 发明授权

US08192822B2 Edge etched silicon wafers 有权
标题翻译：边缘蚀刻硅片
公开(公告)号：US08192822B2
公开(公告)日：2012-06-05
申请号：US12415555
申请日：2009-03-31
申请人： Henry F. Erk , Peter D. Albrecht , Eugene R. Hollander , Thomas E. Doane , Judith A. Schmidt , Roland R. Vandamme , Guoqiang (David) Zhang
发明人： Henry F. Erk , Peter D. Albrecht , Eugene R. Hollander , Thomas E. Doane , Judith A. Schmidt , Roland R. Vandamme , Guoqiang (David) Zhang
IPC分类号： B32B3/02
CPC分类号： H01L21/02021 , H01L21/02019 , H01L21/30608 , H01L21/67086 , H01L21/67313 , Y10T428/21 , Y10T428/219
摘要： The present disclosure generally relates to the manufacture of silicon wafers, and more particularly to edge etching apparatus and methods for etching the edge of a silicon wafer.
摘要翻译：本公开一般涉及硅晶片的制造，更具体地涉及用于蚀刻硅晶片边缘的边缘蚀刻装置和方法。

8. 发明申请

US20090246444A1 EDGE ETCHED SILICON WAFERS 有权
标题翻译：边缘蚀刻硅胶
公开(公告)号：US20090246444A1
公开(公告)日：2009-10-01
申请号：US12415555
申请日：2009-03-31
申请人： Henry F. Erk , Peter D. Albrecht , Eugene R. Hollander , Thomas E. Doane , Judith A. Schmidt , Roland R. Vandamme , Guoqiang (David) Zhang
发明人： Henry F. Erk , Peter D. Albrecht , Eugene R. Hollander , Thomas E. Doane , Judith A. Schmidt , Roland R. Vandamme , Guoqiang (David) Zhang
IPC分类号： B32B3/02
CPC分类号： H01L21/02021 , H01L21/02019 , H01L21/30608 , H01L21/67086 , H01L21/67313 , Y10T428/21 , Y10T428/219
摘要： The present disclosure generally relates to the manufacture of silicon wafers, and more particularly to edge etching apparatus and methods for etching the edge of a silicon wafer.
摘要翻译：本公开一般涉及硅晶片的制造，更具体地涉及用于蚀刻硅晶片边缘的边缘蚀刻装置和方法。

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