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    • 3. 发明授权
    • Selectively deactivating a first control loop in a dual control loop circuit during data transmission
    • 在数据传输期间选择性地禁用双控制回路中的第一控制回路
    • US06779124B2
    • 2004-08-17
    • US09811881
    • 2001-03-19
    • Rainer HöhlerGunnar Krause
    • Rainer HöhlerGunnar Krause
    • G06F104
    • G11C7/1072G06F13/4243G11C7/22
    • The circuit has a clock input for supplying a first clock signal and a clock generator for generating a second clock signal, said clock generator being phase-locked with respect to the first clock signal. The clock output of the clock generator is connected to a control input of a data transmission unit used for outputting data from the circuit and/or for reading into the circuit essentially in synchronism with the first clock signal. The clock generator has at least two control loops connected in succession which are used for controlling the phase angle of the second clock signal, the first control loop being used to generate from the first clock signal at least two intermediate clock signals, each of which has a particular phase angle with respect to the first clock signal, and the second control loop being used to generate the second clock signal from the intermediate clock signals. The first control loop is deactivated during the transmission of data by the data transmission unit, so that the control of the phase angle of the intermediate clock signals is interrupted.
    • 电路具有用于提供第一时钟信号的时钟输入和用于产生第二时钟信号的时钟发生器,所述时钟发生器相对于第一时钟信号被锁相。 时钟发生器的时钟输出连接到用于从电路输出数据和/或用于与第一时钟信号同步地读入电路的数据传输单元的控制输入。 时钟发生器具有连续连接的至少两个控制回路,用于控制第二时钟信号的相位角,第一控制回路用于从第一时钟信号产生至少两个中间时钟信号,每个中间时钟信号具有 相对于第一时钟信号的特定相位角,并且第二控制环用于从中间时钟信号产生第二时钟信号。 在由数据传输单元发送数据期间,第一控制环路被去激活,使得中间时钟信号的相位角的控制被中断。
    • 6. 发明授权
    • Method for on-chip testing of memory cells of an integrated memory circuit
    • 用于片上测试集成存储器电路的存储单元的方法
    • US06728147B2
    • 2004-04-27
    • US10202690
    • 2002-07-24
    • Peter BeerJochen KallscheuerGunnar Krause
    • Peter BeerJochen KallscheuerGunnar Krause
    • G11C700
    • G11C29/12G11C29/10
    • A method for on-chip testing of memory cells of a cell array of an integrated memory circuit includes writing different data patterns to memory cells and reading the different data patterns from the memory cells in order to test the memory cells. A basic data pattern is stored in a data word register and read out by applying a data control signal provided by a controller. In addition to the basic data pattern, at least one further data pattern, which differs from the basic data pattern and is stored in a data word register section, is accessed in a targeted manner through the use of the data control signal. As a result the test proceeds rapidly and yields extensive test information.
    • 用于片上测试集成存储器电路的单元阵列的存储单元的方法包括将不同的数据模式写入存储器单元并从存储器单元读取不同的数据模式以便测试存储器单元。 基本数据模式存储在数据字寄存器中,并通过应用由控制器提供的数据控制信号读出。 除了基本数据模式之外,通过使用数据控制信号,以目标方式访问与基本数据模式不同并存储在数据字寄存器部分中的至少一个另外的数据模式。 因此,测试迅速进行,并产生广泛的测试信息。
    • 10. 发明授权
    • Dynamic semiconductor memory device and method for initializing a
dynamic semiconductor memory device
    • 用于初始化动态半导体存储器件的动态半导体存储器件和方法
    • US6157589A
    • 2000-12-05
    • US343431
    • 1999-06-30
    • Gunnar Krause
    • Gunnar Krause
    • G11C7/10G11C7/22G11C8/00
    • G11C7/22G11C7/1072
    • A dynamic semiconductor memory device of a random access type has an initialization circuit that controls the switching-on operation of the semiconductor memory device and of its circuit components. The initialization circuit supplies a supply voltage stable signal once the supply voltage has been stabilized after the switching-on of the semiconductor memory device. The initialization circuit has an enable circuit that receives the supply voltage stable signal and further command signals externally applied to the semiconductor memory device. The enable circuit supplies an enable signal after a predetermined proper initialization sequence of the command signals applied to the semiconductor memory device is identified. The enable signal effects the unlatching of a control circuit provided for the proper operation of the semiconductor memory device.
    • 随机存取型的动态半导体存储器件具有控制半导体存储器件及其电路元件的接通操作的初始化电路。 一旦电源电压在半导体存储器件接通之后稳定,初始化电路就提供电源电压稳定信号。 该初始化电路具有一个使能电路,其接收电源电压稳定信号以及从外部施加到半导体存储器件的另外的指令信号。 在识别出施加到半导体存储器件的命令信号的预定正确初始化序列之后,使能电路提供使能信号。 使能信号影响为半导体存储器件的正常工作提供的控制电路的解锁。