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1. 发明授权

US07411148B2 Plasma generation apparatus 有权
标题翻译：等离子体发生装置
公开(公告)号：US07411148B2
公开(公告)日：2008-08-12
申请号：US11356947
申请日：2006-02-16
申请人： Gi-Chung Kwon , Sang-Won Lee , Sae-Hoon Uhm , Jae-Hyun Kim , Bo-Han Hong , Yong-Kwan Lee
发明人： Gi-Chung Kwon , Sang-Won Lee , Sae-Hoon Uhm , Jae-Hyun Kim , Bo-Han Hong , Yong-Kwan Lee
IPC分类号： B23K9/00 , B23K9/02
CPC分类号： H01J37/32935 , H01J37/321 , H05H1/46
摘要： A plasma generation apparatus includes: a chamber having a chamber lid and defining an airtight reaction region; a susceptor in the chamber; a gas supplier supplying a process gas to the chamber; and a toroidal core vertically disposed with respect to the susceptor through the chamber lid, including: a toroidal ferromagnetic core combined with the chamber, the toroidal ferromagnetic core having a first portion outside the chamber and a second portion inside the chamber, the second portion having an opening portion; a radio frequency (RF) power supply connected to the chamber; an induction coil electrically connected to the RF power supply, the induction coil rolling the first portion; and a matching circuit matching an impedance between the RF power supply and the induction coil.
摘要翻译：等离子体产生装置包括：具有室盖并限定气密反应区域的室; 室内的一个感受器; 供应处理气体的气体供应器; 以及相对于所述基座通过所述室盖垂直设置的环形芯，包括：与所述室结合的环形铁磁芯，所述环形铁磁芯具有在所述室外部的第一部分和所述室内的第二部分，所述第二部分具有开口部; 连接到所述室的射频（RF）电源; 感应线圈，其电连接到所述RF电源，所述感应线圈滚动所述第一部分; 以及与RF电源和感应线圈之间的阻抗匹配的匹配电路。

2. 发明授权

US08035056B2 Plasma generation apparatus 有权
标题翻译：等离子体发生装置
公开(公告)号：US08035056B2
公开(公告)日：2011-10-11
申请号：US12111903
申请日：2008-04-29
申请人： Gi-Chung Kwon , Sang-Won Lee , Sae-Hoon Uhm , Jae-Hyun Kim , Bo-Han Hong , Yong-Kwan Lee
发明人： Gi-Chung Kwon , Sang-Won Lee , Sae-Hoon Uhm , Jae-Hyun Kim , Bo-Han Hong , Yong-Kwan Lee
IPC分类号： B23K10/00
CPC分类号： H01J37/32935 , H01J37/321 , H05H1/46
摘要： A plasma generation apparatus includes: a chamber having a chamber lid and defining an airtight reaction region; a susceptor in the chamber; a gas supply means supplying a process gas to the chamber; and a toroidal core vertically disposed with respect to the susceptor through the chamber lid, comprising: a toroidal ferromagnetic core combined with the chamber, the toroidal ferromagnetic core having a first portion outside the chamber and a second portion inside the chamber, the second portion having an opening portion; a radio frequency (RF) power supply connected to the chamber; an induction coil electrically connected to the RF power supply, the induction coil rolling the first portion; and a matching circuit matching an impedance between the RF power supply and the induction coil.
摘要翻译：等离子体产生装置包括：具有室盖并限定气密反应区域的室; 室内的一个感受器; 向处理室供给处理气体的气体供给装置; 以及相对于所述基座通过所述室盖垂直设置的环形芯，包括：与所述室结合的环形铁磁芯，所述环形铁磁芯具有在所述室外部的第一部分和所述室内的第二部分，所述第二部分具有开口部; 连接到所述室的射频（RF）电源; 感应线圈，其电连接到所述RF电源，所述感应线圈滚动所述第一部分; 以及与RF电源和感应线圈之间的阻抗匹配的匹配电路。

3. 发明申请

US20060191880A1 Plasma generation apparatus 有权
标题翻译：等离子体发生装置
公开(公告)号：US20060191880A1
公开(公告)日：2006-08-31
申请号：US11356947
申请日：2006-02-16
申请人： Gi-Chung Kwon , Sang-Won Lee , Sae-Hoon Uhm , Jae-Hyun Kim , Bo-Han Hong , Yong-Kwan Lee
发明人： Gi-Chung Kwon , Sang-Won Lee , Sae-Hoon Uhm , Jae-Hyun Kim , Bo-Han Hong , Yong-Kwan Lee
IPC分类号： B23K9/00 , B23K9/02
CPC分类号： H01J37/32935 , H01J37/321 , H05H1/46
摘要： A plasma generation apparatus includes: a chamber having a chamber lid and defining an airtight reaction region; a susceptor in the chamber; a gas supply means supplying a process gas to the chamber; and a toroidal core vertically disposed with respect to the susceptor through the chamber lid, comprising: a toroidal ferromagnetic core combined with the chamber, the toroidal ferromagnetic core having a first portion outside the chamber and a second portion inside the chamber, the second portion having an opening portion; a radio frequency (RF) power supply connected to the chamber; an induction coil electrically connected to the RF power supply, the induction coil rolling the first portion; and a matching circuit matching an impedance between the RF power supply and the induction coil.
摘要翻译：等离子体产生装置包括：具有室盖并限定气密反应区域的室; 室内的一个感受器; 向处理室供给处理气体的气体供给装置; 以及相对于所述基座通过所述室盖垂直设置的环形芯，包括：与所述室结合的环形铁磁芯，所述环形铁磁芯具有在所述室外部的第一部分和所述室内的第二部分，所述第二部分具有开口部; 连接到所述室的射频（RF）电源; 感应线圈，其电连接到所述RF电源，所述感应线圈滚动所述第一部分; 以及与RF电源和感应线圈之间的阻抗匹配的匹配电路。

4. 发明授权

US07442273B2 Apparatus using hybrid coupled plasma 有权
标题翻译：使用混合耦合等离子体的装置
公开(公告)号：US07442273B2
公开(公告)日：2008-10-28
申请号：US10892259
申请日：2004-07-14
申请人： Gi-Chung Kwon , Hong-Young Chang , Yong-Kwan Lee
发明人： Gi-Chung Kwon , Hong-Young Chang , Yong-Kwan Lee
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H01J37/32174 , H01J37/32082 , H01J37/321
摘要： A hybrid coupled plasma type apparatus includes: a chamber having a gas-injecting unit; an electrostatic chuck in the chamber; an insulating plate over the gas-injecting unit; a high frequency generator; an impedance matching circuit connected to the high frequency generator; first and second antennas connected to the impedance matching circuit in parallel, a power of the high frequency generator being supplied to the first and second antennas; an electrode of a plate shape connected to one of the first and second antennas in serial, the power of the high frequency generator being supplied to the electrode; and a power distributor between the high frequency generator and one of the first and second antennas.
摘要翻译：混合耦合等离子体型装置包括：具有气体注入单元的室; 腔室中的静电卡盘; 气体注入单元上的绝缘板; 高频发生器; 连接到高频发生器的阻抗匹配电路; 第一和第二天线并联连接到阻抗匹配电路，高频发生器的功率被提供给第一和第二天线; 连接到第一和第二天线中的一个的板状电极，高频发生器的功率被提供给电极; 以及高频发生器与第一和第二天线之一之间的功率分配器。

5. 发明申请

US20050017201A1 Apparatus using hybrid coupled plasma 有权
标题翻译：使用混合耦合等离子体的装置
公开(公告)号：US20050017201A1
公开(公告)日：2005-01-27
申请号：US10892259
申请日：2004-07-14
申请人： Gi-Chung Kwon , Hong-Young Chang , Yong-Kwan Lee
发明人： Gi-Chung Kwon , Hong-Young Chang , Yong-Kwan Lee
IPC分类号： H05H1/24 , H01J37/32 , G21G5/00
CPC分类号： H01J37/32174 , H01J37/32082 , H01J37/321
摘要： A hybrid coupled plasma type apparatus includes: a chamber having a gas-injecting unit; an electrostatic chuck in the chamber; an insulating plate over the gas-injecting unit; a high frequency generator; an impedance matching circuit connected to the high frequency generator; first and second antennas connected to the impedance matching circuit in parallel, a power of the high frequency generator being supplied to the first and second antennas; an electrode of a plate shape connected to one of the first and second antennas in serial, the power of the high frequency generator being supplied to the electrode; and a power distributor between the high frequency generator and one of the first and second antennas.
摘要翻译：混合耦合等离子体型装置包括：具有气体注入单元的室; 腔室中的静电卡盘; 气体注入单元上的绝缘板; 高频发生器; 连接到高频发生器的阻抗匹配电路; 第一和第二天线并联连接到阻抗匹配电路，高频发生器的功率被提供给第一和第二天线; 连接到第一和第二天线中的一个的板状电极，高频发生器的功率被提供给电极; 以及高频发生器与第一和第二天线之一之间的功率分配器。

6. 发明授权

US08460469B2 Apparatus for etching substrate and method of etching substrate using the same 有权
标题翻译：用于蚀刻基板的设备和使用其的蚀刻基板的方法
公开(公告)号：US08460469B2
公开(公告)日：2013-06-11
申请号：US12395702
申请日：2009-03-01
申请人： Gi-Chung Kwon , Joung-Sik Kim , Jin Hong
发明人： Gi-Chung Kwon , Joung-Sik Kim , Jin Hong
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： An apparatus for etching a substrate includes: a chamber; a susceptor in the chamber, the susceptor including at least one loading portion corresponding to at least one substrate; a gas supply over the susceptor, the gas supply including a hollow and at least one through hole corresponding to the at least one loading portions; and at least one shielding means interposed into the at least one through holes, the at least one shielding means including a body part and a hanging part on the body part, the body part having a cross-sectional area smaller than the at least one through holes, and the hanging part outwardly protruding from the body part, wherein the at least one shielding means is suspended on the gas supply by the hanging part, and wherein the body part shields a central portion of the at least one substrate and exposes an edge portion of the at least one substrate.
摘要翻译：一种用于蚀刻衬底的设备包括：腔室; 所述腔室中的基座，所述基座包括对应于至少一个基板的至少一个装载部分; 在所述基座上的气体供应，所述气体供应包括对应于所述至少一个装载部分的中空和至少一个通孔; 以及插入所述至少一个通孔中的至少一个屏蔽装置，所述至少一个屏蔽装置包括在所述主体部分上的主体部分和悬挂部分，所述主体部分的横截面积小于所述至少一个通孔并且所述悬挂部分从所述主体部分向外突出，其中所述至少一个屏蔽装置通过所述悬挂部分悬挂在所述气体供应器上，并且其中所述主体部分屏蔽所述至少一个基板的中心部分并且暴露出边缘至少一个基底的部分。

7. 发明授权

US06847516B2 Electrostatic chuck for preventing an arc 有权
标题翻译：用于防止电弧的静电卡盘
公开(公告)号：US06847516B2
公开(公告)日：2005-01-25
申请号：US10234695
申请日：2002-09-04
申请人： Gi-Chung Kwon , Hong-Sik Byun , Sung-Weon Lee , Hong-Seub Kim , Sun-Seok Han , Bu-Jin Ko , Joung-Sik Kim
发明人： Gi-Chung Kwon , Hong-Sik Byun , Sung-Weon Lee , Hong-Seub Kim , Sun-Seok Han , Bu-Jin Ko , Joung-Sik Kim
IPC分类号： H01L21/3065 , H01L21/683 , H01T23/00
CPC分类号： H01L21/6833
摘要： An electrostatic chuck includes: a metal plate; a dielectric layer on the metal plate, the dielectric layer and the metal plate having a lift pin hole and an injection hole of a cooling gas; a lift pin moving up-and-down through the lift pin hole; first protection insulator on an inner surface of the lift pin hole; and second protection insulator on an inner surface of the injection hole.
摘要翻译：静电卡盘包括：金属板; 金属板上的电介质层，电介质层和金属板具有提升销孔和冷却气体的注入孔; 升降销通过升降销孔上下移动; 第一保护绝缘子在提升销孔的内表面上; 和在注入孔的内表面上的第二保护绝缘体。

8. 发明授权

US06768269B2 Plasma process chamber monitoring method and system used therefor 有权
标题翻译：等离子体处理室监测方法及其使用的系统
公开(公告)号：US06768269B2
公开(公告)日：2004-07-27
申请号：US10288129
申请日：2002-11-04
申请人： Gi-Chung Kwon , Hong-Sik Byun , Young-Suk Lee
发明人： Gi-Chung Kwon , Hong-Sik Byun , Young-Suk Lee
IPC分类号： H01J724
CPC分类号： H01J37/32935
摘要： A plasma process chamber is monitored for excess current while fabricating a semiconductor device. The method includes grounding the plasma process chamber in which fabricating a semiconductor device is conducted using a plasma; detecting a current flowing in a ground line from the plasma process chamber to the ground; interpreting whether the detected current is more than a reference value during fabricating the semiconductor device; and deciding that the plasma process chamber is in an abnormal state when the detected current is more than the reference value. It is thereby possible to produce more stable plasma and the operation of the plasma process chamber is stabilized. Further, the expected life span of the plasma process chamber and other devices is enlarged, and the risk of injuring the operator is prevented.
摘要翻译：在制造半导体器件的同时监测等离子体处理室的过电流。该方法包括使用等离子体接地制造半导体器件的等离子体处理室; 检测从等离子体处理室到地面的在地线中流动的电流; 解释在制造半导体器件期间检测到的电流是否大于参考值; 并且当检测到的电流大于参考值时，判定等离子体处理室处于异常状态。从而可以产生更稳定的等离子体，并且等离子体处理室的操作是稳定的。此外，等离子体处理室和其他装置的预期寿命被扩大，并且防止了操作者受伤的风险。

9. 发明授权

US07465672B2 Method of forming etching mask 失效
标题翻译：形成蚀刻掩模的方法
公开(公告)号：US07465672B2
公开(公告)日：2008-12-16
申请号：US11556127
申请日：2006-11-02
申请人： Gi-Chung Kwon , Nae-Eung Lee , Chang-Ki Park , Chun-Hee Lee , Duck-Ho Kim
发明人： Gi-Chung Kwon , Nae-Eung Lee , Chang-Ki Park , Chun-Hee Lee , Duck-Ho Kim
IPC分类号： H01L21/302
CPC分类号： H01L21/31116 , G03F7/11 , G03F7/40 , G03F7/405 , H01L21/0273 , H01L21/0337 , H01L21/3081 , H01L21/3086 , H01L21/31144 , H01L21/32139
摘要： The present invention relates to a method of forming an etching mask. According to the present invention, there is provided a method of forming an etching mask, comprising the steps of: depositing a hard mask film containing silicon on a substrate; depositing a photoresist on the hard mask film; patterning the photoresist; and etching the hard mask film using the photoresist pattern as an mask and using an etching gas including a CHxFy(x, y=1, 2, 3) gas. At this time, an etch selectivity of the hard mask film to the photoresist pattern can be increased using a mixed gas including CH2F2 and H2 gases when etching the hard mask film under the photoresist pattern used in a wavelength of 193 nm or less.
摘要翻译：本发明涉及一种形成蚀刻掩模的方法。根据本发明，提供一种形成蚀刻掩模的方法，包括以下步骤：在衬底上沉积含有硅的硬掩模膜; 在硬掩模膜上沉积光致抗蚀剂; 图案化光刻胶; 并使用光致抗蚀剂图案作为掩模蚀刻硬掩膜，并使用包括CH x F y（x，y = 1,2,3）气体的蚀刻气体。此时，在193nm以下的波长下使用的光刻胶图案上刻蚀硬掩模膜时，可以使用包括CH 2 F 2和H 2气体的混合气体来增加硬掩模膜对光致抗蚀剂图案的蚀刻选择性。

10. 发明授权

US06770836B2 Impedance matching circuit for inductively coupled plasma source 失效
标题翻译：用于电感耦合等离子体源的阻抗匹配电路
公开(公告)号：US06770836B2
公开(公告)日：2004-08-03
申请号：US10100983
申请日：2002-03-19
申请人： Gi-Chung Kwon , Hong-Sik Byun , Sung-Weon Lee , Hong-Seub Kim , Sun-Seok Han , Bu-Jin Ko , Joung-Sik Kim
发明人： Gi-Chung Kwon , Hong-Sik Byun , Sung-Weon Lee , Hong-Seub Kim , Sun-Seok Han , Bu-Jin Ko , Joung-Sik Kim
IPC分类号： B23K1000
CPC分类号： H01J37/321 , H01J37/32183 , H05H1/46
摘要： An impedance matching circuit for a plasma source includes: a first network including: a first coil; and a RF power supply applying a first voltage to the first coil; and a second network including; a second coil grounded having a second voltage, the second voltage being lower than the first voltage; first and second reactive elements, one end portion of the first and second reactive elements being connected to each end portion of the second coil, respectively; and a load connected to the other end portions of the first and second reactive elements, phases at two end portions of the load being different from each other.
摘要翻译：一种用于等离子体源的阻抗匹配电路包括：第一网络，包括：第一线圈; 以及向所述第一线圈施加第一电压的RF电源; 和第二网络; 接地的第二线圈具有第二电压，第二电压低于第一电压; 第一和第二无功元件，第一和第二无功元件的一个端部分别连接到第二线圈的每个端部; 以及连接到第一和第二无功元件的另一端部的负载，负载的两个端部处的相位彼此不同。

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