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1. 发明授权

US06770836B2 Impedance matching circuit for inductively coupled plasma source 失效
标题翻译：用于电感耦合等离子体源的阻抗匹配电路
公开(公告)号：US06770836B2
公开(公告)日：2004-08-03
申请号：US10100983
申请日：2002-03-19
申请人： Gi-Chung Kwon , Hong-Sik Byun , Sung-Weon Lee , Hong-Seub Kim , Sun-Seok Han , Bu-Jin Ko , Joung-Sik Kim
发明人： Gi-Chung Kwon , Hong-Sik Byun , Sung-Weon Lee , Hong-Seub Kim , Sun-Seok Han , Bu-Jin Ko , Joung-Sik Kim
IPC分类号： B23K1000
CPC分类号： H01J37/321 , H01J37/32183 , H05H1/46
摘要： An impedance matching circuit for a plasma source includes: a first network including: a first coil; and a RF power supply applying a first voltage to the first coil; and a second network including; a second coil grounded having a second voltage, the second voltage being lower than the first voltage; first and second reactive elements, one end portion of the first and second reactive elements being connected to each end portion of the second coil, respectively; and a load connected to the other end portions of the first and second reactive elements, phases at two end portions of the load being different from each other.
摘要翻译：一种用于等离子体源的阻抗匹配电路包括：第一网络，包括：第一线圈; 以及向所述第一线圈施加第一电压的RF电源; 和第二网络; 接地的第二线圈具有第二电压，第二电压低于第一电压; 第一和第二无功元件，第一和第二无功元件的一个端部分别连接到第二线圈的每个端部; 以及连接到第一和第二无功元件的另一端部的负载，负载的两个端部处的相位彼此不同。

2. 发明授权

US06847516B2 Electrostatic chuck for preventing an arc 有权
标题翻译：用于防止电弧的静电卡盘
公开(公告)号：US06847516B2
公开(公告)日：2005-01-25
申请号：US10234695
申请日：2002-09-04
申请人： Gi-Chung Kwon , Hong-Sik Byun , Sung-Weon Lee , Hong-Seub Kim , Sun-Seok Han , Bu-Jin Ko , Joung-Sik Kim
发明人： Gi-Chung Kwon , Hong-Sik Byun , Sung-Weon Lee , Hong-Seub Kim , Sun-Seok Han , Bu-Jin Ko , Joung-Sik Kim
IPC分类号： H01L21/3065 , H01L21/683 , H01T23/00
CPC分类号： H01L21/6833
摘要： An electrostatic chuck includes: a metal plate; a dielectric layer on the metal plate, the dielectric layer and the metal plate having a lift pin hole and an injection hole of a cooling gas; a lift pin moving up-and-down through the lift pin hole; first protection insulator on an inner surface of the lift pin hole; and second protection insulator on an inner surface of the injection hole.
摘要翻译：静电卡盘包括：金属板; 金属板上的电介质层，电介质层和金属板具有提升销孔和冷却气体的注入孔; 升降销通过升降销孔上下移动; 第一保护绝缘子在提升销孔的内表面上; 和在注入孔的内表面上的第二保护绝缘体。

3. 发明授权

US06768269B2 Plasma process chamber monitoring method and system used therefor 有权
标题翻译：等离子体处理室监测方法及其使用的系统
公开(公告)号：US06768269B2
公开(公告)日：2004-07-27
申请号：US10288129
申请日：2002-11-04
申请人： Gi-Chung Kwon , Hong-Sik Byun , Young-Suk Lee
发明人： Gi-Chung Kwon , Hong-Sik Byun , Young-Suk Lee
IPC分类号： H01J724
CPC分类号： H01J37/32935
摘要： A plasma process chamber is monitored for excess current while fabricating a semiconductor device. The method includes grounding the plasma process chamber in which fabricating a semiconductor device is conducted using a plasma; detecting a current flowing in a ground line from the plasma process chamber to the ground; interpreting whether the detected current is more than a reference value during fabricating the semiconductor device; and deciding that the plasma process chamber is in an abnormal state when the detected current is more than the reference value. It is thereby possible to produce more stable plasma and the operation of the plasma process chamber is stabilized. Further, the expected life span of the plasma process chamber and other devices is enlarged, and the risk of injuring the operator is prevented.
摘要翻译：在制造半导体器件的同时监测等离子体处理室的过电流。该方法包括使用等离子体接地制造半导体器件的等离子体处理室; 检测从等离子体处理室到地面的在地线中流动的电流; 解释在制造半导体器件期间检测到的电流是否大于参考值; 并且当检测到的电流大于参考值时，判定等离子体处理室处于异常状态。从而可以产生更稳定的等离子体，并且等离子体处理室的操作是稳定的。此外，等离子体处理室和其他装置的预期寿命被扩大，并且防止了操作者受伤的风险。

4. 发明授权

US06683274B1 Wafer susceptor 有权
标题翻译：晶圆座
公开(公告)号：US06683274B1
公开(公告)日：2004-01-27
申请号：US10295954
申请日：2002-11-18
申请人： Gi Chung Kwon , Soo Sik Yoon , Hong Sik Byun
发明人： Gi Chung Kwon , Soo Sik Yoon , Hong Sik Byun
IPC分类号： B23K1000
CPC分类号： H01L21/67103 , C23C16/4586 , C23C16/505 , H01J37/32082
摘要： Disclosed is a wafer susceptor which includes: a ceramic body; a RF electrode mounted within the ceramic body; a heater mounted within the ceramic body and spaced apart from the RF electrode by a predetermined distance to be disposed below the RF electrode; and an RF shield of a metal material, the RF shield being electrically grounded and mounted within the ceramic body, the RF shield being disposed between the RF electrode and the heater without being in contact with either the heater or the RF electrode. In case where an RF power is applied to the RF electrode, it is possible to minimize an influence of an RF noise on the heater 24. Accordingly, since the RF power can be applied to the susceptor while heating the susceptor at a high temperature, it is possible to deposit a high-density thin film and also control properties of the thin film such as stress and step coverage. Further, the invention may take the stabilization of the power system.
摘要翻译：公开了一种晶片基座，其包括：陶瓷体; 安装在陶瓷体内的RF电极; 安装在陶瓷体内并与RF电极隔开预定距离的加热器，以设置在RF电极下方; 以及金属材料的RF屏蔽层，RF屏蔽层电接地并安装在陶瓷体内，RF屏蔽件设置在RF电极和加热器之间，而不与加热器或RF电极接触。在向RF电极施加RF功率的情况下，可以使RF噪声对加热器24的影响最小化。因此，由于可以在高温下加热基座的同时向基座施加RF功率，可以沉积高密度薄膜，并且还可以控制薄膜的性能，例如应力和台阶覆盖。此外，本发明可以实现电力系统的稳定。

5. 发明授权

US06653988B2 Parallel resonance whirl antenna 有权
公开(公告)号：US06653988B2
公开(公告)日：2003-11-25
申请号：US10185676
申请日：2002-06-27
申请人： Gi Chung Kwon , Hong Sik Byun , Sung Weon Lee , Hong Seub Kim , Sun Seok Han , Bu Jin Ko , Joung Sik Kim
发明人： Gi Chung Kwon , Hong Sik Byun , Sung Weon Lee , Hong Seub Kim , Sun Seok Han , Bu Jin Ko , Joung Sik Kim
IPC分类号： H01Q136
CPC分类号： H01Q21/24 , H01Q1/38 , H01Q9/27 , H01Q21/20
摘要： Disclosed is a parallel resonance antenna comprising: a whirl antenna having a plurality of antenna units installed two-dimensionally and radially around a central point, each of the antenna units having a ground point at a predetermined position thereof, portions outside the ground points respectively being bent in a same direction, the antenna units having a same size and direction, angles between the antenna units at the central point being all the same; a central conductive line connected to the central point to be normal to the whirl antenna, for being supplied with an RF power; a metal plate installed over and apart from the whirl antenna, the metal plate being connected with end portions of the antenna units, and having a penetration hole through which the central conductive line passes without contacting with the metal plate; and a variable resonance capacitor installed in series between the central conductive line and the metal plate. According to a parallel resonance antenna, the geometrical structure enables to obtain a uniform plasma. Since the antenna has a small inductance, impedance matching is easy even at the VHF band. Also, at the resonance point, since the potential of the inner portions (Z1, Z2, Z3 and Z4) of the ground points of the antenna units is low, it becomes possible to decrease a non-desired sputtering phenomenon.

6. 发明授权

US06685800B2 Apparatus for generating inductively coupled plasma 有权
标题翻译：用于产生电感耦合等离子体的装置
公开(公告)号：US06685800B2
公开(公告)日：2004-02-03
申请号：US10003195
申请日：2001-11-14
申请人： Hong Seub Kim , Gi Chung Kwon , Sun Seok Han , Choong Won Lee , Sung Weon Lee , Hong Sik Byun
发明人： Hong Seub Kim , Gi Chung Kwon , Sun Seok Han , Choong Won Lee , Sung Weon Lee , Hong Sik Byun
IPC分类号： C23C1600
CPC分类号： H01J37/32522 , H01J37/321
摘要： Disclosed is an apparatus for generating ICP, which has a heater having a hot wire as a heating source for heating elements in a chamber and inner wall of the chamber and also efficiently transfers heat of the heater through a heat transferring gas to the elements in the chamber and the inner wall of the chamber. According to the present invention, the elements in the chamber and the inner wall of the chamber can be heated up to a temperature of about 200° C., thereby reducing the adhesion of the by-product served as the source generating the undesirable particles. In addition, since the hot wire having a longer life span than the halogen lamp is used as heat radiating means, the life span of the apparatus is also increased.
摘要翻译：公开了一种用于产生ICP的装置，其具有加热器，该加热器具有热丝作为加热室，用于加热腔室中的元件和腔室的内壁，并且还通过传热气体将加热器的热量有效地传递到室和室的内壁。根据本发明，室中的元件和室的内壁可被加热至约200℃的温度，从而降低了作为产生不期望的颗粒的源的副产物的粘附。此外，由于使用寿命比卤素灯长的热丝作为散热装置，因此装置的使用寿命也增加。

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