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1. 发明申请

US20110086501A1 Technique for Processing a Substrate Having a Non-Planar Surface 有权
标题翻译：用于处理具有非平面表面的基板的技术
公开(公告)号：US20110086501A1
公开(公告)日：2011-04-14
申请号：US12902250
申请日：2010-10-12
申请人： George D. Papasouliotis , Vikram Singh , Heyun Yin , Helen L. Maynard , Ludovic Godet
发明人： George D. Papasouliotis , Vikram Singh , Heyun Yin , Helen L. Maynard , Ludovic Godet
IPC分类号： H01L21/30
CPC分类号： H01L21/2236 , H01J37/321 , H01J37/32706 , H01J37/32834 , H01L29/66803
摘要： A method of processing a substrate having horizontal and non-horizontal surfaces is disclosed. The substrate is implanted with particles using an ion implanter. During the ion implant, due to the nature of the implant process, a film may be deposited on the surfaces, wherein the thickness of this film is thicker on the horizontal surfaces. The presences of this film may adversely alter the properties of the substrate. To rectify this, a second process step is performed to remove the film deposited on the horizontal surfaces. In some embodiments, an etching process is used to remove this film. In some embodiments, a material modifying step is used to change the composition of the material comprising the film. This material modifying step may be instead of, or in addition to the etching process.
摘要翻译：公开了一种处理具有水平和非水平表面的衬底的方法。使用离子注入机将基片注入颗粒。在离子注入期间，由于植入过程的性质，可以在表面上沉积膜，其中该膜的厚度在水平表面上更厚。该膜的存在可能不利地改变基材的性质。为了纠正这一点，执行第二处理步骤以去除沉积在水平表面上的膜。在一些实施例中，使用蚀刻工艺去除该膜。在一些实施方案中，材料修饰步骤用于改变包含该膜的材料的组成。该材料修饰步骤可以代替或补充蚀刻工艺。

2. 发明授权

US08679960B2 Technique for processing a substrate having a non-planar surface 有权
标题翻译：用于处理具有非平面表面的衬底的技术
公开(公告)号：US08679960B2
公开(公告)日：2014-03-25
申请号：US12902250
申请日：2010-10-12
申请人： George D. Papasouliotis , Vikram Singh , Heyun Yin , Helen L. Maynard , Ludovic Godet
发明人： George D. Papasouliotis , Vikram Singh , Heyun Yin , Helen L. Maynard , Ludovic Godet
IPC分类号： H01L21/425 , H01L21/38
CPC分类号： H01L21/2236 , H01J37/321 , H01J37/32706 , H01J37/32834 , H01L29/66803
摘要： A method of processing a substrate having horizontal and non-horizontal surfaces is disclosed. The substrate is implanted with particles using an ion implanter. During the ion implant, due to the nature of the implant process, a film may be deposited on the surfaces, wherein the thickness of this film is thicker on the horizontal surfaces. The presences of this film may adversely alter the properties of the substrate. To rectify this, a second process step is performed to remove the film deposited on the horizontal surfaces. In some embodiments, an etching process is used to remove this film. In some embodiments, a material modifying step is used to change the composition of the material comprising the film. This material modifying step may be instead of, or in addition to the etching process.
摘要翻译：公开了一种处理具有水平和非水平表面的衬底的方法。使用离子注入机将基片注入颗粒。在离子注入期间，由于植入过程的性质，可以在表面上沉积膜，其中该膜的厚度在水平表面上更厚。该膜的存在可能不利地改变基材的性质。为了纠正这一点，执行第二处理步骤以去除沉积在水平表面上的膜。在一些实施例中，使用蚀刻工艺去除该膜。在一些实施方案中，材料修饰步骤用于改变包含该膜的材料的组成。该材料修饰步骤可以代替或补充蚀刻工艺。

3. 发明授权

US07737013B2 Implantation of multiple species to address copper reliability 失效
标题翻译：植入多种物种以解决铜的可靠性
公开(公告)号：US07737013B2
公开(公告)日：2010-06-15
申请号：US12255181
申请日：2008-10-21
申请人： Heyun Yin , George D. Papasouliotis , Vikram Singh
发明人： Heyun Yin , George D. Papasouliotis , Vikram Singh
IPC分类号： H01L21/00
CPC分类号： H01L21/76846 , H01L21/76849 , H01L21/76867
摘要： A first species and a second species are implanted into a conductor of a substrate, which may be copper. The first species and second species may be implanted sequentially or at least partly simultaneously. Diffusion of the first species within the conductor of the substrate is prevented by the presence of the second species. In one particular example, the first species is silicon and the second species is nitrogen, although other combinations are possible.
摘要翻译：第一种和第二种被植入到可以是铜的衬底的导体中。可以顺序地或至少部分地同时植入第一种和第二种。通过第二种物质的存在来防止第一种在基底导体内的扩散。在一个具体实例中，第一种是硅，第二种是氮，尽管其它组合是可能的。

4. 发明授权

US08507372B2 Method for processing a substrate having a non-planar substrate surface 有权
标题翻译：用于处理具有非平面基板表面的基板的方法
公开(公告)号：US08507372B2
公开(公告)日：2013-08-13
申请号：US13480204
申请日：2012-05-24
申请人： George D. Papasouliotis , Vikram Singh , Heyun Yin
发明人： George D. Papasouliotis , Vikram Singh , Heyun Yin
IPC分类号： H01L21/425
CPC分类号： H01L21/2236 , H01L29/66803
摘要： A technique for conformal processing of a substrate having a non-planar surface is disclosed. The technique includes several stages. In a first stage, some surfaces of the substrate are effectively processed. During a second stage, these surfaces are treated to limit or eliminate further processing of these surfaces. During a third stage, other surfaces of the substrate are processed. In some applications, the surfaces that are perpendicular, or substantially perpendicular to the flow of particles are processed in the first and second stages, while other surfaces are processed in the third stage. In some embodiments, the second stage includes the deposition of a film on the substrate.
摘要翻译：公开了一种用于对具有非平面表面的衬底进行保形加工的技术。该技术包括几个阶段。在第一阶段中，有效地处理衬底的某些表面。在第二阶段期间，处理这些表面以限制或消除这些表面的进一步加工。在第三阶段期间，处理衬底的其它表面。在一些应用中，在第一和第二阶段中处理垂直或基本垂直于颗粒流的表面，而在第三阶段处理其它表面。在一些实施例中，第二阶段包括在衬底上沉积膜。

5. 发明授权

US08202792B2 Method of processing a substrate having a non-planar surface 有权
标题翻译：处理具有非平面表面的基板的方法
公开(公告)号：US08202792B2
公开(公告)日：2012-06-19
申请号：US12765346
申请日：2010-04-22
申请人： George D. Papasouliotis , Vikram Singh , Heyun Yin
发明人： George D. Papasouliotis , Vikram Singh , Heyun Yin
IPC分类号： H01L21/425
CPC分类号： H01L21/2236 , H01L29/66803
摘要： A technique for conformal processing of a substrate having a non-planar surface is disclosed. The technique includes several stages. In a first stage, some surfaces of the substrate are effectively processed. During a second stage, these surfaces are treated to limit or eliminate further processing of these surfaces. During a third stage, other surfaces of the substrate are processed. In some applications, the surfaces that are perpendicular, or substantially perpendicular to the flow of particles are processed in the first and second stages, while other surfaces are processed in the third stage. In some embodiments, the second stage includes the deposition of a film on the substrate.
摘要翻译：公开了一种用于对具有非平面表面的衬底进行保形加工的技术。该技术包括几个阶段。在第一阶段中，有效地处理衬底的某些表面。在第二阶段期间，处理这些表面以限制或消除这些表面的进一步加工。在第三阶段期间，处理衬底的其它表面。在一些应用中，在第一和第二阶段中处理垂直或基本垂直于颗粒流的表面，而在第三阶段处理其它表面。在一些实施例中，第二阶段包括在衬底上沉积膜。

6. 发明申请

US20100273322A1 METHOD OF PROCESSING A SUBSTRATE HAVING A NON-PLANAR SURFACE 有权
标题翻译：处理非平面表面的基板的方法
公开(公告)号：US20100273322A1
公开(公告)日：2010-10-28
申请号：US12765346
申请日：2010-04-22
申请人： George D. Papasouliotis , Vikram Singh , Heyun Yin
发明人： George D. Papasouliotis , Vikram Singh , Heyun Yin
IPC分类号： H01L21/265
CPC分类号： H01L21/2236 , H01L29/66803
摘要： A technique for conformal processing of a substrate having a non-planar surface is disclosed. The technique includes several stages. In a first stage, some surfaces of the substrate are effectively processed. During a second stage, these surfaces are treated to limit or eliminate further processing of these surfaces. During a third stage, other surfaces of the substrate are processed. In some applications, the surfaces that are perpendicular, or substantially perpendicular to the flow of particles are processed in the first and second stages, while other surfaces are processed in the third stage. In some embodiments, the second stage includes the deposition of a film on the substrate.
摘要翻译：公开了一种用于对具有非平面表面的衬底进行保形加工的技术。该技术包括几个阶段。在第一阶段中，有效地处理衬底的某些表面。在第二阶段期间，处理这些表面以限制或消除这些表面的进一步加工。在第三阶段期间，处理衬底的其它表面。在一些应用中，在第一和第二阶段中处理垂直或基本垂直于颗粒流的表面，而在第三阶段处理其它表面。在一些实施例中，第二阶段包括在衬底上沉积膜。

7. 发明申请

US20120295430A1 METHOD FOR PROCESSING A SUBSTRATE HAVING A NON-PLANAR SUBSTRATE SURFACE 有权
标题翻译：用于处理具有非平面基板表面的基板的方法
公开(公告)号：US20120295430A1
公开(公告)日：2012-11-22
申请号：US13480204
申请日：2012-05-24
申请人： George D. Papasouliotis , Vikram Singh , Heyun Yin
发明人： George D. Papasouliotis , Vikram Singh , Heyun Yin
IPC分类号： H01L21/265
CPC分类号： H01L21/2236 , H01L29/66803
摘要： A technique for conformal processing of a substrate having a non-planar surface is disclosed. The technique includes several stages. In a first stage, some surfaces of the substrate are effectively processed. During a second stage, these surfaces are treated to limit or eliminate further processing of these surfaces. During a third stage, other surfaces of the substrate are processed. In some applications, the surfaces that are perpendicular, or substantially perpendicular to the flow of particles are processed in the first and second stages, while other surfaces are processed in the third stage. In some embodiments, the second stage includes the deposition of a film on the substrate.
摘要翻译：公开了一种用于对具有非平面表面的衬底进行保形加工的技术。该技术包括几个阶段。在第一阶段中，有效地处理衬底的某些表面。在第二阶段期间，处理这些表面以限制或消除这些表面的进一步加工。在第三阶段期间，处理衬底的其它表面。在一些应用中，在第一和第二阶段中处理垂直或基本垂直于颗粒流的表面，而在第三阶段处理其它表面。在一些实施例中，第二阶段包括在衬底上沉积膜。

8. 发明授权

US07863194B2 Implantation of multiple species to address copper reliability 有权
标题翻译：植入多种物种以解决铜的可靠性
公开(公告)号：US07863194B2
公开(公告)日：2011-01-04
申请号：US12760249
申请日：2010-04-14
申请人： Heyun Yin , George D. Papasouliotis , Vikram Singh
发明人： Heyun Yin , George D. Papasouliotis , Vikram Singh
IPC分类号： H01L21/00
CPC分类号： H01L21/76846 , H01L21/76849 , H01L21/76867
摘要： A first species and a second species are implanted into a conductor of a substrate, which may be copper. The first species and second species may be implanted sequentially or at least partly simultaneously. Diffusion of the first species within the conductor of the substrate is prevented by the presence of the second species. In one particular example, the first species is silicon and the second species is nitrogen, although other combinations are possible.
摘要翻译：第一种和第二种被植入到可以是铜的衬底的导体中。可以顺序地或至少部分地同时植入第一种和第二种。通过第二种物质的存在来防止第一种在基底导体内的扩散。在一个具体实例中，第一种是硅，第二种是氮，尽管其它组合是可能的。

9. 发明申请

US20100048018A1 Doped Layers for Reducing Electromigration 审中-公开
标题翻译：用于减少电迁移的掺杂层
公开(公告)号：US20100048018A1
公开(公告)日：2010-02-25
申请号：US12198083
申请日：2008-08-25
申请人： Atul Gupta , Heyun Yin , Vikram Singh
发明人： Atul Gupta , Heyun Yin , Vikram Singh
IPC分类号： H01L21/768
CPC分类号： H01L21/76834 , H01L21/76822 , H01L21/76825 , H01L21/76826 , H01L21/76832 , H01L21/76883 , H01L21/76886
摘要： A method of fabricating metal interconnects with reduced electromigration includes depositing metal interconnects on a substrate comprising electronic devices. A layer is deposited on the metal interconnects. The layer is doped with at least one dopant having a dopant concentration that increases an electromigration resistance of the metal atoms.
摘要翻译：制造具有减少的电迁移的金属互连的方法包括在包括电子器件的衬底上沉积金属互连。一层沉积在金属互连上。该层掺杂有至少一种具有增加金属原子的电迁移阻力的掺杂剂浓度的掺杂剂。

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