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    • 9. 发明授权
    • Filamentless ion source for thin film processing and surface modification
    • 用于薄膜加工和表面改性的无电离源
    • US5198718A
    • 1993-03-30
    • US602254
    • 1991-05-31
    • Mervyn H. DavisGary ProudfootKeith H. Bayliss
    • Mervyn H. DavisGary ProudfootKeith H. Bayliss
    • C23C14/46C23C14/48H01J27/16H01J27/18H01J37/06H01J37/08H01J37/305H01J37/34H01L21/265H01L21/302H01L21/3065
    • H01J27/16H01J37/08
    • A filamentless (without a heated cathode) ion source for thin film processing and surface modification. The ion source comprises a plasma chamber which includes a wall defining an evacuable chamber having a first end and a second end, with a dielectric member extending across the first end of the evacuable chamber. A gas inlet admits a plasma forming gas into the chamber. An RF emitter is positioned adjacent to the dielectric member for inductively generating a plasma in the gas in the plasma chamber during use of the ion source. A control grid structure is provided for extracting ions from plasma in the plasma chamber, and include a first grid connected to a positive voltage source and a second grid connected to a negative voltage source, to produce an acceleration field for accelerating ions towards and through the second grid of the control grid structure. An ion beam processing apparatus and an ion beam neutralizer incorporating such an ion source are also described.
    • PCT No.PCT / GB90 / 00340 Sec。 371日期1991年5月31日 102(e)日期1991年5月31日PCT 1990年3月6日PCT PCT。 出版物WO90 / 10945 1990年9月20日。用于薄膜加工和表面改性的无丝(无加热阴极)离子源。 离子源包括等离子体室,其包括限定具有第一端和第二端的可抽空室的壁,电介质构件延伸穿过可抽空室的第一端。 气体入口允许等离子体形成气体进入腔室。 RF发射器邻近电介质构件定位,用于在使用离子源期间在等离子体室中的气体中感应地产生等离子体。 提供了一种用于从等离子体室中的等离子体提取离子的控制栅格结构,并且包括连接到正电压源的第一栅极和与负电压源连接的第二栅极,以产生用于加速离子朝向和穿过 控制网格结构的第二格。 还描述了并入这种离子源的离子束处理装置和离子束中和器。
    • 10. 发明授权
    • Low energy ion gun having multiple multi-aperture electrode grids with specific spacing requirements
    • 低能离子枪具有多个具有特定间距要求的多孔电极网格
    • US06346768B1
    • 2002-02-12
    • US09284929
    • 1999-06-07
    • Gary Proudfoot
    • Gary Proudfoot
    • H05B3126
    • H01J27/024H01J27/18H01J37/08
    • A low energy ion gun for ion beam processing. The ion gun includes a plasma chamber having an open ended, conductive, non-magnetic body, a first end of which is closed by a flat or minimally dished dielectric member and with electrodes at a second end thereof opposite the first end. The ion gun also has primary magnets arranged around the body for trapping electrons adjacent the wall of the plasma chamber in use of the ion gun and an r.f. induction device. The electrodes include multi-aperture grids arranged for connection to respective positive potential sources and positioned to contact the plasma in the plasma chamber. The apertures of the grids are aligned so that particles emerging from an aperture of a first one of the grids are accelerated through corresponding apertures of the other grids in the form of a beamlet. A plurality of beamlets forms a beam.
    • 用于离子束处理的低能离子枪。 离子枪包括具有开口的,导电的非磁性体的等离子体室,其第一端由平坦或最小的碟形电介质构件封闭,电极在与第一端相对的第二端处。 离子枪还具有围绕身体设置的主磁体,用于在使用离子枪和r.f.中捕获邻近等离子体室壁的电子。 感应装置。 电极包括布置成连接到相应的正电位源并被定位成与等离子体室中的等离子体接触的多孔格栅。 栅格的孔径对齐,使得从栅格中的第一栅极出射的颗粒通过子束形式的其它栅格的相应孔加速。 多个子束形成一束。