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1. 发明授权

US5198718A Filamentless ion source for thin film processing and surface modification 失效
标题翻译：用于薄膜加工和表面改性的无电离源
公开(公告)号：US5198718A
公开(公告)日：1993-03-30
申请号：US602254
申请日：1991-05-31
申请人： Mervyn H. Davis , Gary Proudfoot , Keith H. Bayliss
发明人： Mervyn H. Davis , Gary Proudfoot , Keith H. Bayliss
IPC分类号： C23C14/46 , C23C14/48 , H01J27/16 , H01J27/18 , H01J37/06 , H01J37/08 , H01J37/305 , H01J37/34 , H01L21/265 , H01L21/302 , H01L21/3065
CPC分类号： H01J27/16 , H01J37/08
摘要： A filamentless (without a heated cathode) ion source for thin film processing and surface modification. The ion source comprises a plasma chamber which includes a wall defining an evacuable chamber having a first end and a second end, with a dielectric member extending across the first end of the evacuable chamber. A gas inlet admits a plasma forming gas into the chamber. An RF emitter is positioned adjacent to the dielectric member for inductively generating a plasma in the gas in the plasma chamber during use of the ion source. A control grid structure is provided for extracting ions from plasma in the plasma chamber, and include a first grid connected to a positive voltage source and a second grid connected to a negative voltage source, to produce an acceleration field for accelerating ions towards and through the second grid of the control grid structure. An ion beam processing apparatus and an ion beam neutralizer incorporating such an ion source are also described.
摘要翻译： PCT No.PCT / GB90 / 00340 Sec。 371日期1991年5月31日 102（e）日期1991年5月31日PCT 1990年3月6日PCT PCT。出版物WO90 / 10945 1990年9月20日。用于薄膜加工和表面改性的无丝（无加热阴极）离子源。离子源包括等离子体室，其包括限定具有第一端和第二端的可抽空室的壁，电介质构件延伸穿过可抽空室的第一端。气体入口允许等离子体形成气体进入腔室。 RF发射器邻近电介质构件定位，用于在使用离子源期间在等离子体室中的气体中感应地产生等离子体。提供了一种用于从等离子体室中的等离子体提取离子的控制栅格结构，并且包括连接到正电压源的第一栅极和与负电压源连接的第二栅极，以产生用于加速离子朝向和穿过控制网格结构的第二格。还描述了并入这种离子源的离子束处理装置和离子束中和器。

2. 发明授权

US4826585A Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US4826585A
公开(公告)日：1989-05-02
申请号：US94146
申请日：1987-09-08
申请人： Mervyn H. Davis
发明人： Mervyn H. Davis
IPC分类号： H01L21/302 , C23C16/509 , H01J37/32 , H01L21/205 , H01L21/3065 , H01L21/31 , H05H1/11 , H01H1/46 , B01J19/12 , C23C16/00
CPC分类号： H01J37/32688 , C23C16/5096 , H01J37/32082 , H01J37/32623
摘要： An electrode assembly is described for use in plasma processes, such as reactive dry etching and plasma deposition. This includes a primary electrode which is electrically insulated from the vacuum chamber in which it is mounted in use. The primary electrode may be connected to an r.f. or d.c. power source and has a cylindrical hole with an insulated subsidiary electrode at the bottom of the hole which can be earthed or allowed to adopt a floating voltage in use. Magnets are used to trap electrons adjacent the walls of the hole. These may consist of a plurality of elongate magnets positioned around an annular pole plate with their largest dimension arranged longitudinally with respect to the pole plate and the hole, with their magnetic axes arranged radially, and with alternating polarity around the inner periphery of the pole plate. In use an r.f. frequency (e.g. 13.56 MHz) may be applied to the primary electrode while a reactant gas (e.g. C.sub.2 F.sub.6 or a C.sub.2 F.sub.6 /CHF.sub.3 mixture) is admitted to the vacuum chamber. The silicon wafer or other substrate to be etched is placed on a substrate table within the chamber which can also be connected to an r.f. power source.
摘要翻译：描述了用于等离子体工艺中的电极组件，例如反应性干蚀刻和等离子体沉积。这包括与使用中安装的真空室电绝缘的主电极。主电极可以连接到r.f. 或直流电源，并且具有在孔底部具有绝缘辅助电极的圆柱形孔，其可以接地或允许在使用中采用浮动电压。磁铁用于捕获靠近孔壁的电子。这些可以由环形极板周围的多个细长磁体组成，其最大尺寸相对于极板和孔纵向布置，其磁轴径向布置，并且极性围绕极板的内周交替极性。在使用r.f. 频率（例如13.56MHz）可以施加到主电极，而反应气体（例如C2F6或C2F6 / CHF3混合物）被允许进入真空室。待蚀刻的硅晶片或其它基板被放置在室内的衬底台上，该衬底台也可以连接到r.f. 能量源。

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