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1. 发明授权

US08576634B2 Semiconductor device comprising a memory cell group having a gate width larger than a second memory cell group 有权
标题翻译：半导体器件包括具有大于第二存储单元组的栅极宽度的存储单元组
公开(公告)号：US08576634B2
公开(公告)日：2013-11-05
申请号：US12764090
申请日：2010-04-20
申请人： Fumitoshi Ito , Yoshiyuki Kawashima , Takeshi Sakai , Yasushi Ishii , Yasuhiro Kanamaru , Takashi Hashimoto , Makoto Mizuno , Kousuke Okuyama , Yukiko Manabe
发明人： Fumitoshi Ito , Yoshiyuki Kawashima , Takeshi Sakai , Yasushi Ishii , Yasuhiro Kanamaru , Takashi Hashimoto , Makoto Mizuno , Kousuke Okuyama , Yukiko Manabe
IPC分类号： G11C11/34 , H01L29/792
CPC分类号： H01L27/11568 , G11C16/0466 , H01L21/28282 , H01L27/115 , H01L29/42344 , H01L29/66833 , H01L29/792
摘要： The degree of integration and the number of rewriting of a semiconductor device having a nonvolatile memory element are improved. A first MONOS nonvolatile-memory-element and a second MONOS nonvolatile-memory-element having a large gate width compared with the first MONOS nonvolatile-memory-element are mounted together on the same substrate, and the first MONOS nonvolatile-memory-element is used for storing program data which is scarcely rewritten, and the second MONOS nonvolatile-memory-element is used for storing processed data which is frequently rewritten.
摘要翻译：改善了具有非易失性存储元件的半导体器件的积分度和重写次数。与第一MONOS非易失性存储元件相比，具有大门宽度的第一MONOS非易失性存储元件和第二MONOS非易失性存储元件一起安装在同一衬底上，并且第一MONOS非易失性存储元件是用于存储几乎不被重写的程序数据，并且第二MONOS非易失性存储元件用于存储频繁重写的处理数据。

2. 发明授权

US07349250B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07349250B2
公开(公告)日：2008-03-25
申请号：US11181721
申请日：2005-07-15
申请人： Fumitoshi Ito , Yoshiyuki Kawashima , Takeshi Sakai , Yasushi Ishii , Yasuhiro Kanamaru , Takashi Hashimoto , Makoto Mizuno , Kousuke Okuyama , Yukiko Manabe
发明人： Fumitoshi Ito , Yoshiyuki Kawashima , Takeshi Sakai , Yasushi Ishii , Yasuhiro Kanamaru , Takashi Hashimoto , Makoto Mizuno , Kousuke Okuyama , Yukiko Manabe
IPC分类号： G11C11/34
CPC分类号： H01L27/11568 , G11C16/0466 , H01L21/28282 , H01L27/115 , H01L29/42344 , H01L29/66833 , H01L29/792
摘要： The degree of integration and the number of rewriting of a semiconductor device having a nonvolatile memory element are improved. A first MONOS nonvolatile-memory-element and a second MONOS nonvolatile-memory-element having a large gate width compared with the first MONOS nonvolatile-memory-element are mounted together on the same substrate, and the first MONOS nonvolatile-memory-element is used for storing program data which is scarcely rewritten, and the second MONOS nonvolatile-memory-element is used for storing processed data which is frequently rewritten.
摘要翻译：改善了具有非易失性存储元件的半导体器件的积分度和重写次数。与第一MONOS非易失性存储元件相比，具有大门宽度的第一MONOS非易失性存储元件和第二MONOS非易失性存储元件一起安装在同一衬底上，并且第一MONOS非易失性存储元件是用于存储几乎不被重写的程序数据，并且第二MONOS非易失性存储元件用于存储频繁重写的处理数据。

3. 发明申请

US20060077713A1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US20060077713A1
公开(公告)日：2006-04-13
申请号：US11181721
申请日：2005-07-15
申请人： Fumitoshi Ito , Yoshiyuki Kawashima , Takeshi Sakai , Yasushi Ishii , Yasuhiro Kanamaru , Takashi Hashimoto , Makoto Mizuno , Kousuke Okuyama , Yukiko Manabe
发明人： Fumitoshi Ito , Yoshiyuki Kawashima , Takeshi Sakai , Yasushi Ishii , Yasuhiro Kanamaru , Takashi Hashimoto , Makoto Mizuno , Kousuke Okuyama , Yukiko Manabe
IPC分类号： G11C16/04
CPC分类号： H01L27/11568 , G11C16/0466 , H01L21/28282 , H01L27/115 , H01L29/42344 , H01L29/66833 , H01L29/792
摘要： The degree of integration and the number of rewriting of a semiconductor device having a nonvolatile memory element are improved. A first MONOS nonvolatile-memory-element and a second MONOS nonvolatile-memory-element having a large gate width compared with the first MONOS nonvolatile-memory-element are mounted together on the same substrate, and the first MONOS nonvolatile-memory-element is used for storing program data which is scarcely rewritten, and the second MONOS nonvolatile-memory-element is used for storing processed data which is frequently rewritten.
摘要翻译：改善了具有非易失性存储元件的半导体器件的积分度和重写次数。与第一MONOS非易失性存储元件相比，具有大门宽度的第一MONOS非易失性存储元件和第二MONOS非易失性存储元件一起安装在同一衬底上，并且第一MONOS非易失性存储元件是用于存储几乎不被重写的程序数据，并且第二MONOS非易失性存储元件用于存储频繁重写的处理数据。

4. 发明授权

US07719052B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07719052B2
公开(公告)日：2010-05-18
申请号：US12020393
申请日：2008-01-25
申请人： Fumitoshi Ito , Yoshiyuki Kawashima , Takeshi Sakai , Yasushi Ishii , Yasuhiro Kanamaru , Takashi Hashimoto , Makoto Mizuno , Kousuke Okuyama , Yukiko Manabe
发明人： Fumitoshi Ito , Yoshiyuki Kawashima , Takeshi Sakai , Yasushi Ishii , Yasuhiro Kanamaru , Takashi Hashimoto , Makoto Mizuno , Kousuke Okuyama , Yukiko Manabe
IPC分类号： H01L29/792
CPC分类号： H01L27/11568 , G11C16/0466 , H01L21/28282 , H01L27/115 , H01L29/42344 , H01L29/66833 , H01L29/792
摘要： The degree of integration and the number of rewriting of a semiconductor device having a nonvolatile memory element are improved. A first MONOS nonvolatile-memory-element and a second MONOS nonvolatile-memory-element having a large gate width compared with the first MONOS nonvolatile-memory-element are mounted together on the same substrate, and the first MONOS nonvolatile-memory-element is used for storing program data which is scarcely rewritten, and the second MONOS nonvolatile-memory-element is used for storing processed data which is frequently rewritten.
摘要翻译：改善了具有非易失性存储元件的半导体器件的积分度和重写次数。与第一MONOS非易失性存储元件相比，具有大门宽度的第一MONOS非易失性存储元件和第二MONOS非易失性存储元件一起安装在同一衬底上，并且第一MONOS非易失性存储元件是用于存储几乎不被重写的程序数据，并且第二MONOS非易失性存储元件用于存储频繁重写的处理数据。

5. 发明申请

US20100202205A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20100202205A1
公开(公告)日：2010-08-12
申请号：US12764090
申请日：2010-04-20
申请人： Fumitoshi Ito , Yoshiyuki Kawashima , Takeshi Sakai , Yasushi Ishii , Yasuhiro Kanamaru , Takashi Hashimoto , Makoto Mizuno , Kousuke Okuyama , Yukiko Manabe
发明人： Fumitoshi Ito , Yoshiyuki Kawashima , Takeshi Sakai , Yasushi Ishii , Yasuhiro Kanamaru , Takashi Hashimoto , Makoto Mizuno , Kousuke Okuyama , Yukiko Manabe
IPC分类号： G11C16/04 , H01L29/792
CPC分类号： H01L27/11568 , G11C16/0466 , H01L21/28282 , H01L27/115 , H01L29/42344 , H01L29/66833 , H01L29/792
摘要： The degree of integration and the number of rewriting of a semiconductor device having a nonvolatile memory element are improved. A first MONOS nonvolatile-memory-element and a second MONOS nonvolatile-memory-element having a large gate width compared with the first MONOS nonvolatile-memory-element are mounted together on the same substrate, and the first MONOS nonvolatile-memory-element is used for storing program data which is scarcely rewritten, and the second MONOS nonvolatile-memory-element is used for storing processed data which is frequently rewritten.
摘要翻译：改善了具有非易失性存储元件的半导体器件的积分度和重写次数。与第一MONOS非易失性存储元件相比，具有大门宽度的第一MONOS非易失性存储元件和第二MONOS非易失性存储元件一起安装在同一衬底上，并且第一MONOS非易失性存储元件是用于存储几乎不被重写的程序数据，并且第二MONOS非易失性存储元件用于存储频繁重写的处理数据。

6. 发明授权

US07087955B2 Semiconductor device and a method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07087955B2
公开(公告)日：2006-08-08
申请号：US10811830
申请日：2004-03-30
申请人： Yoshiyuki Kawashima , Fumitoshi Ito , Takeshi Sakai , Yasushi Ishii , Yasuhiro Kanamaru , Takashi Hashimoto , Makoto Mizuno , Kousuke Okuyama
发明人： Yoshiyuki Kawashima , Fumitoshi Ito , Takeshi Sakai , Yasushi Ishii , Yasuhiro Kanamaru , Takashi Hashimoto , Makoto Mizuno , Kousuke Okuyama
IPC分类号： H01L29/788
CPC分类号： H01L29/66825 , H01L21/28273 , H01L21/28282 , H01L29/42324 , H01L29/66833
摘要： A semiconductor device has a nonvolatile memory employing a split-gate type memory cell structure, using a nitride film as a charge storage layer. An n-type semiconductor region is formed in a main surface of a semiconductor substrate, and then, a memory gate electrode of a memory cell of a split gate type and a charge storage layer are formed over the semiconductor region. Subsequently, side walls are formed on side surfaces of the memory gate electrode, and a photoresist pattern is formed over the main surface of the semiconductor substrate. The photoresist pattern serves as an etching mask, and a part of the main surface of the semiconductor substrate is removed by etching to form a dent. In the region of the dent, the n-type semiconductor region is removed. Then, a p-type semiconductor region for forming a channel of an nMIS transistor for selecting a memory cell is formed.
摘要翻译：半导体器件具有使用氮化物膜作为电荷存储层的采用分离栅型存储单元结构的非易失性存储器。在半导体衬底的主表面中形成n型半导体区域，然后在半导体区域上形成分裂栅型存储单元的存储栅电极和电荷存储层。随后，在存储栅电极的侧表面上形成侧壁，并且在半导体衬底的主表面上形成光刻胶图形。光致抗蚀剂图案用作蚀刻掩模，并且通过蚀刻去除半导体衬底的主表面的一部分以形成凹陷。在凹陷的区域中，去除n型半导体区域。然后，形成用于形成用于选择存储单元的nMIS晶体管的沟道的p型半导体区域。

7. 发明申请

US20110235103A1 Image processing apparatus and control method Thereof 有权
标题翻译：图像处理装置及其控制方法
公开(公告)号：US20110235103A1
公开(公告)日：2011-09-29
申请号：US12999857
申请日：2010-10-20
申请人： Fumitoshi Ito
发明人： Fumitoshi Ito
IPC分类号： G06K15/00
CPC分类号： H04N1/00464 , H04N1/00244 , H04N1/00474 , H04N1/0048 , H04N1/00482 , H04N1/00506 , H04N1/0097 , H04N1/00973 , H04N2201/3276
摘要： When operation screen data sent from a Web server can be received, an image processing apparatus displays an operation screen based on the operation screen data on an operation unit. On the other hand, when operation screen data cannot be received due to a communication error, the image processing apparatus displays a substitute operation screen that allows it use of at least one of its image processing functions on the operation unit.
摘要翻译：当从Web服务器发送的操作画面数据可以被接收时，图像处理装置根据操作画面数据在操作单元上显示操作画面。另一方面，当由于通信错误而不能接收操作画面数据时，图像处理设备显示允许其在操作单元上使用其图像处理功能中的至少一个的替代操作画面。

8. 发明授权

US08026544B2 Fabricating and operating a memory array having a multi-level cell region and a single-level cell region 有权
标题翻译：制造和操作具有多级单元区域和单级单元区域的存储器阵列
公开(公告)号：US08026544B2
公开(公告)日：2011-09-27
申请号：US12414567
申请日：2009-03-30
申请人： Fumitoshi Ito , Shinji Sato
发明人： Fumitoshi Ito , Shinji Sato
IPC分类号： H01L29/788
CPC分类号： G11C11/5621 , G11C2211/5641
摘要： Techniques are disclosed herein for applying different process steps to single-level cell (SLC) blocks in a memory array than to multi-level cell (MLC) blocks such that the SLC blocks will have high endurance and the MLC blocks will have high reliability. In some aspects, different doping is used in the MLC blocks than the SLC blocks. In some aspects, different isolation is used in the MLC blocks than the SLC blocks. Techniques are disclosed that apply different read parameters depending on how many times a block has been programmed/erased. Therefore, blocks that have been cycled many times are read using different parameters than blocks that have been cycled fewer times.
摘要翻译：本文公开了用于将不同的处理步骤应用于存储器阵列中的单级单元（SLC）块而不是多级单元（MLC）块的技术，使得SLC块将具有高耐久性并且MLC块将具有高可靠性。在一些方面，在MLC块中使用与SLC块不同的掺杂。在某些方面，在MLC块中使用与SLC块不同的隔离。公开了根据块被编程/擦除多少次来应用不同读取参数的技术。因此，使用与循环次数少的块不同的参数来读取已循环多次的块。

9. 发明申请

US20110222102A1 IMAGE FORMING APPARATUS, CONTROL METHOD, AND PROGRAM 有权
标题翻译：图像形成装置，控制方法和程序
公开(公告)号：US20110222102A1
公开(公告)日：2011-09-15
申请号：US13039480
申请日：2011-03-03
申请人： Fumitoshi Ito
发明人： Fumitoshi Ito
IPC分类号： G06F15/00
CPC分类号： H04N1/00464 , H04N1/00204 , H04N1/00244 , H04N1/00474 , H04N1/4413 , H04N1/4433 , H04N2201/0094
摘要： An image forming apparatus including a web server configured to generate an operation screen and a browser configured to receive the operation screen from the web server and to display the operation screen includes an identification unit configured to identify, if a connection request is given to the web server, a requestor of the connection request, a web server authentication unit configured to perform authentication of a user to use the web server, and a control unit configured to, if the requestor is identified as the browser of the image forming apparatus by the identification unit, control the web server to transmit the operation screen to the browser of the image forming apparatus without the web server authentication unit performing the authentication.
摘要翻译：一种图像形成装置，包括被配置为生成操作屏幕的web服务器和被配置为从web服务器接收操作屏幕并显示操作屏幕的浏览器，其包括：识别单元，被配置为识别如果连接请求被提供给web 服务器，连接请求的请求者，被配置为执行用户对web服务器的认证的Web服务器认证单元，以及控制单元，被配置为，如果请求者被识别为图像形成装置的浏览器，单元，控制网络服务器将操作屏幕发送到图像形成装置的浏览器，而没有Web服务器认证单元执行认证。

10. 发明授权

US07639836B2 Image copying device and image processing system 失效
标题翻译：图像复印装置和图像处理系统
公开(公告)号：US07639836B2
公开(公告)日：2009-12-29
申请号：US11534832
申请日：2006-09-25
申请人： Fumitoshi Ito
发明人： Fumitoshi Ito
IPC分类号： G06K9/00
CPC分类号： H04N1/2307 , H04N1/00846 , H04N1/00854 , H04N1/00856 , H04N1/00968 , H04N1/2338 , H04N1/2369 , H04N1/2376 , H04N1/32144 , H04N2201/3246 , H04N2201/3269 , H04N2201/3271
摘要： An image copying device includes: a setting section setting an image processing condition specified by a user; a determination section determining whether or not an image processing condition is embedded in a read image obtained by reading out a sheet; and a control section that, if the determination section determines that the image processing condition is not embedded in the read image, performs control for generating a copied material of the read image by using the image processing condition set by the setting section. If the determination section determines that an image processing condition is embedded in the read image, the control section performs control for generating a copied material by using the embedded image processing condition and a part of the image processing condition set by the setting section, the part not conflicting with the embedded image processing condition.
摘要翻译：一种图像复制设备包括：设置用户指定的图像处理条件的设置部分; 确定部分，确定图像处理条件是否嵌入在通过读出纸张而获得的读取图像中; 以及控制部分，如果确定部分确定图像处理条件未被嵌入在读取的图像中，则通过使用由设置部分设置的图像处理条件来执行用于生成读取的图像的复制材料的控制。如果确定部分确定图像处理条件被嵌入在读取图像中，则控制部分通过使用嵌入图像处理条件和由设置部分设置的图像处理条件的一部分来执行用于生成复制材料的控制，不与嵌入式图像处理条件冲突。

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