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1. 发明授权

US07472591B2 Thermal gas flow and control device for internal-combustion engine using the same 失效
标题翻译：内燃机用热气流量控制装置
公开(公告)号：US07472591B2
公开(公告)日：2009-01-06
申请号：US11781569
申请日：2007-07-23
申请人： Yasuhiro Kanamaru , Keiji Hanzawa
发明人： Yasuhiro Kanamaru , Keiji Hanzawa
IPC分类号： G01F1/68
CPC分类号： G01F1/6845 , G01F1/688 , G01F15/006
摘要： An object of the invention is to realize a thermal gas flow sensor capable of reducing time fluctuation of a heating resistor. A heating resistor 3 and thermometric resistors 4 and 14 are formed on a surface of a thin-wall portion 2. Electrode drawn wires 18 to 23 and pad portions 8 to 13 are formed so as to draw signal lines from the heating resistor 3 and the thermometric resistors 4 and 14. Contact portions 24 to 29 are formed to come in contact with the heating resistor 3, the thermometric resistors 4 and 14, and the electrode drawn wires 18 to 23. The heating resistor 3 and the thermometric resistors 4 and 14 are covered with protective films 30a, 30b, and 31a and insulating films 31b and 30c. The protective films 31a and 31b are formed of a dense film formed of nitride or the like. A part coming in contact with a drawn wire portion 34 and the heating resistor 3 is covered with a contact barrier metal film 36 (titanium-based electrical conductor such as titanium nitride, titanium tungsten, and titanium). The titanium-based electrical conductor is a dense film and resistant to hydrogen. Therefore, it is possible to reduce a time fluctuation of the heating resistor.
摘要翻译：本发明的目的是实现能够减少加热电阻器的时间波动的热气流量传感器。在薄壁部分2的表面上形成加热电阻器3和温度测量电阻器4和14.形成电极拉丝18至23和焊盘部分8至13，以便从加热电阻器3和形成温度计电阻器4和14.接触部分24至29与加热电阻器3，测温电阻器4和14以及电极拉丝18至23接触。加热电阻器3和测温电阻器4和14 覆盖有保护膜30a，30b和31a以及绝缘膜31b和30c。保护膜31a和31b由氮化物等形成的致密膜形成。与拉丝部分34和加热电阻器3接触的部分被接触阻挡金属膜36（钛基电导体，例如氮化钛，钛钨和钛）覆盖。钛基电导体是致密膜并且耐氢。因此，可以减少加热电阻器的时间波动。

2. 发明申请

US20100202205A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20100202205A1
公开(公告)日：2010-08-12
申请号：US12764090
申请日：2010-04-20
申请人： Fumitoshi Ito , Yoshiyuki Kawashima , Takeshi Sakai , Yasushi Ishii , Yasuhiro Kanamaru , Takashi Hashimoto , Makoto Mizuno , Kousuke Okuyama , Yukiko Manabe
发明人： Fumitoshi Ito , Yoshiyuki Kawashima , Takeshi Sakai , Yasushi Ishii , Yasuhiro Kanamaru , Takashi Hashimoto , Makoto Mizuno , Kousuke Okuyama , Yukiko Manabe
IPC分类号： G11C16/04 , H01L29/792
CPC分类号： H01L27/11568 , G11C16/0466 , H01L21/28282 , H01L27/115 , H01L29/42344 , H01L29/66833 , H01L29/792
摘要： The degree of integration and the number of rewriting of a semiconductor device having a nonvolatile memory element are improved. A first MONOS nonvolatile-memory-element and a second MONOS nonvolatile-memory-element having a large gate width compared with the first MONOS nonvolatile-memory-element are mounted together on the same substrate, and the first MONOS nonvolatile-memory-element is used for storing program data which is scarcely rewritten, and the second MONOS nonvolatile-memory-element is used for storing processed data which is frequently rewritten.
摘要翻译：改善了具有非易失性存储元件的半导体器件的积分度和重写次数。与第一MONOS非易失性存储元件相比，具有大门宽度的第一MONOS非易失性存储元件和第二MONOS非易失性存储元件一起安装在同一衬底上，并且第一MONOS非易失性存储元件是用于存储几乎不被重写的程序数据，并且第二MONOS非易失性存储元件用于存储频繁重写的处理数据。

3. 发明申请

US20090000372A1 Thermal Flow Measurement Device 失效
标题翻译：热流量测量装置
公开(公告)号：US20090000372A1
公开(公告)日：2009-01-01
申请号：US11814308
申请日：2006-02-20
申请人： Masahiro Matsumoto , Hiroshi Nakano , Masamichi Yamada , Keiji Hanzawa , Izumi Watanabe , Keiichi Nakada , Yasuhiro Kanamaru
发明人： Masahiro Matsumoto , Hiroshi Nakano , Masamichi Yamada , Keiji Hanzawa , Izumi Watanabe , Keiichi Nakada , Yasuhiro Kanamaru
IPC分类号： G01F1/69
CPC分类号： G01F15/006 , G01F1/6845 , G01F1/692
摘要： Conventional thermal flow measurement devices lack consideration for automobiles in severe environments. A detection element of the thermal flow measurement device according to the present invention is structured by the provision of a planar substrate made of a material having good thermal conductivity, such as silicon or ceramic, with a thin-walled portion (diaphragm). On the surface of the thin-walled portion, the detection element comprises a heat element as a heater heated to a temperature being different to a predetermined extent from the temperature of the air flow to be measured, temperature-detecting resistors as temperature-detecting means on both sides of the heat element, wiring portions formed of electrical conductors that draw signal lines from the heat element and the temperature-detecting resistors and that have a melting point of 2000° C. or higher, and pads.
摘要翻译：传统的热流测量装置在恶劣环境中缺乏汽车的考虑。根据本发明的热流测量装置的检测元件通过提供由具有良好导热性的材料（例如硅或陶瓷）制成的具有薄壁部分（隔膜）的平面基板构成。在薄壁部分的表面上，检测元件包括作为加热器的加热元件加热到与待测量的空气流的温度不同的温度，作为温度检测装置的温度检测电阻器在加热元件的两侧，由从导热元件和温度检测电阻器吸引信号线并且具有2000℃或更高熔点的电导体形成的布线部分和焊盘。

4. 发明授权

US07719052B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07719052B2
公开(公告)日：2010-05-18
申请号：US12020393
申请日：2008-01-25
申请人： Fumitoshi Ito , Yoshiyuki Kawashima , Takeshi Sakai , Yasushi Ishii , Yasuhiro Kanamaru , Takashi Hashimoto , Makoto Mizuno , Kousuke Okuyama , Yukiko Manabe
发明人： Fumitoshi Ito , Yoshiyuki Kawashima , Takeshi Sakai , Yasushi Ishii , Yasuhiro Kanamaru , Takashi Hashimoto , Makoto Mizuno , Kousuke Okuyama , Yukiko Manabe
IPC分类号： H01L29/792
CPC分类号： H01L27/11568 , G11C16/0466 , H01L21/28282 , H01L27/115 , H01L29/42344 , H01L29/66833 , H01L29/792
摘要： The degree of integration and the number of rewriting of a semiconductor device having a nonvolatile memory element are improved. A first MONOS nonvolatile-memory-element and a second MONOS nonvolatile-memory-element having a large gate width compared with the first MONOS nonvolatile-memory-element are mounted together on the same substrate, and the first MONOS nonvolatile-memory-element is used for storing program data which is scarcely rewritten, and the second MONOS nonvolatile-memory-element is used for storing processed data which is frequently rewritten.
摘要翻译：改善了具有非易失性存储元件的半导体器件的积分度和重写次数。与第一MONOS非易失性存储元件相比，具有大门宽度的第一MONOS非易失性存储元件和第二MONOS非易失性存储元件一起安装在同一衬底上，并且第一MONOS非易失性存储元件是用于存储几乎不被重写的程序数据，并且第二MONOS非易失性存储元件用于存储频繁重写的处理数据。

5. 发明授权

US07617723B2 Thermal type flow rate measuring apparatus having decrease in coupling capacitance between wiring portions of detection element 有权
标题翻译：热式流量测量装置，其检测元件的布线部分之间的耦合电容降低
公开(公告)号：US07617723B2
公开(公告)日：2009-11-17
申请号：US11765736
申请日：2007-06-20
申请人： Masahiro Matsumoto , Masamichi Yamada , Hiroshi Nakano , Keiji Hanzawa , Yasuhiro Kanamaru
发明人： Masahiro Matsumoto , Masamichi Yamada , Hiroshi Nakano , Keiji Hanzawa , Yasuhiro Kanamaru
IPC分类号： G01F1/68
CPC分类号： G01F1/6845 , G01F1/692 , G01F1/6986
摘要： The coupling capacitance of the wiring portions of a thermal type flow rate measuring apparatus is reduced so as to prevent a drop in the response characteristics. A detection element of the thermal type flow rate measuring apparatus includes a planar substrate made of silicon, ceramic, or the like, in which a diaphragm is formed. On the surface of the diaphragm, there are disposed a heat-generating resistor as a heat-generating element that is heated to a predetermined temperature difference from the temperature of air flow to be measured, a heat-generating element temperature-detecting resistor for detecting the temperature of the heat-generating resistor, and temperature-detecting resistors disposed on both sides of the heat-generating resistor. The detection element also includes wiring portions which have connecting terminals electrically connected to the heat-generating resistor and a wiring pattern electrically connected with the surface of the planar substrate.
摘要翻译：热式流量测量装置的布线部分的耦合电容减小，以防止响应特性的下降。热式流量测量装置的检测元件包括其中形成有隔膜的由硅，陶瓷等制成的平面基板。在隔膜的表面上设置有发热电阻器作为发热元件，其被加热到与要测量的空气流的温度的预定温度差，用于检测的发热元件温度检测电阻器发热电阻器的温度和设置在发热电阻器两侧的温度检测电阻器。检测元件还包括具有与发热电阻器电连接的连接端子的布线部分和与平面基板的表面电连接的布线图案。

6. 发明申请

US20080151629A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20080151629A1
公开(公告)日：2008-06-26
申请号：US12020393
申请日：2008-01-25
申请人： Fumitoshi ITO , Yoshiyuki Kawashima , Takeshi Sakai , Yasushi Ishii , Yasuhiro Kanamaru , Takashi Hashimoto , Makoto Mizuno , Kousuke Okuyama , Yukiko Manabe
发明人： Fumitoshi ITO , Yoshiyuki Kawashima , Takeshi Sakai , Yasushi Ishii , Yasuhiro Kanamaru , Takashi Hashimoto , Makoto Mizuno , Kousuke Okuyama , Yukiko Manabe
IPC分类号： G11C11/40 , H01L29/788
CPC分类号： H01L27/11568 , G11C16/0466 , H01L21/28282 , H01L27/115 , H01L29/42344 , H01L29/66833 , H01L29/792
摘要： The degree of integration and the number of rewriting of a semiconductor device having a nonvolatile memory element are improved. A first MONOS nonvolatile-memory-element and a second MONOS nonvolatile-memory-element having a large gate width compared with the first MONOS nonvolatile-memory-element are mounted together on the same substrate, and the first MONOS nonvolatile-memory-element is used for storing program data which is scarcely rewritten, and the second MONOS nonvolatile-memory-element is used for storing processed data which is frequently rewritten.
摘要翻译：改善了具有非易失性存储元件的半导体器件的积分度和重写次数。与第一MONOS非易失性存储元件相比，具有大门宽度的第一MONOS非易失性存储元件和第二MONOS非易失性存储元件一起安装在同一衬底上，并且第一MONOS非易失性存储元件是用于存储几乎不被重写的程序数据，并且第二MONOS非易失性存储元件用于存储频繁重写的处理数据。

7. 发明授权

US07087955B2 Semiconductor device and a method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07087955B2
公开(公告)日：2006-08-08
申请号：US10811830
申请日：2004-03-30
申请人： Yoshiyuki Kawashima , Fumitoshi Ito , Takeshi Sakai , Yasushi Ishii , Yasuhiro Kanamaru , Takashi Hashimoto , Makoto Mizuno , Kousuke Okuyama
发明人： Yoshiyuki Kawashima , Fumitoshi Ito , Takeshi Sakai , Yasushi Ishii , Yasuhiro Kanamaru , Takashi Hashimoto , Makoto Mizuno , Kousuke Okuyama
IPC分类号： H01L29/788
CPC分类号： H01L29/66825 , H01L21/28273 , H01L21/28282 , H01L29/42324 , H01L29/66833
摘要： A semiconductor device has a nonvolatile memory employing a split-gate type memory cell structure, using a nitride film as a charge storage layer. An n-type semiconductor region is formed in a main surface of a semiconductor substrate, and then, a memory gate electrode of a memory cell of a split gate type and a charge storage layer are formed over the semiconductor region. Subsequently, side walls are formed on side surfaces of the memory gate electrode, and a photoresist pattern is formed over the main surface of the semiconductor substrate. The photoresist pattern serves as an etching mask, and a part of the main surface of the semiconductor substrate is removed by etching to form a dent. In the region of the dent, the n-type semiconductor region is removed. Then, a p-type semiconductor region for forming a channel of an nMIS transistor for selecting a memory cell is formed.
摘要翻译：半导体器件具有使用氮化物膜作为电荷存储层的采用分离栅型存储单元结构的非易失性存储器。在半导体衬底的主表面中形成n型半导体区域，然后在半导体区域上形成分裂栅型存储单元的存储栅电极和电荷存储层。随后，在存储栅电极的侧表面上形成侧壁，并且在半导体衬底的主表面上形成光刻胶图形。光致抗蚀剂图案用作蚀刻掩模，并且通过蚀刻去除半导体衬底的主表面的一部分以形成凹陷。在凹陷的区域中，去除n型半导体区域。然后，形成用于形成用于选择存储单元的nMIS晶体管的沟道的p型半导体区域。

8. 发明授权

US08576634B2 Semiconductor device comprising a memory cell group having a gate width larger than a second memory cell group 有权
标题翻译：半导体器件包括具有大于第二存储单元组的栅极宽度的存储单元组
公开(公告)号：US08576634B2
公开(公告)日：2013-11-05
申请号：US12764090
申请日：2010-04-20
申请人： Fumitoshi Ito , Yoshiyuki Kawashima , Takeshi Sakai , Yasushi Ishii , Yasuhiro Kanamaru , Takashi Hashimoto , Makoto Mizuno , Kousuke Okuyama , Yukiko Manabe
发明人： Fumitoshi Ito , Yoshiyuki Kawashima , Takeshi Sakai , Yasushi Ishii , Yasuhiro Kanamaru , Takashi Hashimoto , Makoto Mizuno , Kousuke Okuyama , Yukiko Manabe
IPC分类号： G11C11/34 , H01L29/792
CPC分类号： H01L27/11568 , G11C16/0466 , H01L21/28282 , H01L27/115 , H01L29/42344 , H01L29/66833 , H01L29/792
摘要： The degree of integration and the number of rewriting of a semiconductor device having a nonvolatile memory element are improved. A first MONOS nonvolatile-memory-element and a second MONOS nonvolatile-memory-element having a large gate width compared with the first MONOS nonvolatile-memory-element are mounted together on the same substrate, and the first MONOS nonvolatile-memory-element is used for storing program data which is scarcely rewritten, and the second MONOS nonvolatile-memory-element is used for storing processed data which is frequently rewritten.
摘要翻译：改善了具有非易失性存储元件的半导体器件的积分度和重写次数。与第一MONOS非易失性存储元件相比，具有大门宽度的第一MONOS非易失性存储元件和第二MONOS非易失性存储元件一起安装在同一衬底上，并且第一MONOS非易失性存储元件是用于存储几乎不被重写的程序数据，并且第二MONOS非易失性存储元件用于存储频繁重写的处理数据。

9. 发明授权

US07721599B2 Reduced resistance thermal flow measurement device 失效
标题翻译：降低电阻热流量测量装置
公开(公告)号：US07721599B2
公开(公告)日：2010-05-25
申请号：US11814308
申请日：2006-02-20
申请人： Masahiro Matsumoto , Hiroshi Nakano , Masamichi Yamada , Keiji Hanzawa , Izumi Watanabe , Keiichi Nakada , Yasuhiro Kanamaru
发明人： Masahiro Matsumoto , Hiroshi Nakano , Masamichi Yamada , Keiji Hanzawa , Izumi Watanabe , Keiichi Nakada , Yasuhiro Kanamaru
IPC分类号： G01F1/68
CPC分类号： G01F15/006 , G01F1/6845 , G01F1/692
摘要： Conventional thermal flow measurement devices lack consideration for automobiles in severe environments. A detection element of the thermal flow measurement device according to the present invention is structured by the provision of a planar substrate made of a material having good thermal conductivity, such as silicon or ceramic, with a thin-walled portion (diaphragm). On the surface of the thin-walled portion, the detection element comprises a heat element as a heater heated to a temperature being different to a predetermined extent from the temperature of the air flow to be measured, temperature-detecting resistors as temperature-detecting means on both sides of the heat element, wiring portions formed of electrical conductors that draw signal lines from the heat element and the temperature-detecting resistors and that have a melting point of 2000° C. or higher, and pads.
摘要翻译：传统的热流测量装置在恶劣环境中缺乏汽车的考虑。根据本发明的热流测量装置的检测元件通过提供由具有良好导热性的材料（例如硅或陶瓷）制成的具有薄壁部分（隔膜）的平面基板构成。在薄壁部分的表面上，检测元件包括作为加热器的加热元件加热到与待测量的空气流的温度不同的温度，作为温度检测装置的温度检测电阻器在加热元件的两侧，由从导热元件和温度检测电阻器吸引信号线并且具有2000℃或更高熔点的电导体形成的布线部分和焊盘。

10. 发明授权

US07349250B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07349250B2
公开(公告)日：2008-03-25
申请号：US11181721
申请日：2005-07-15
申请人： Fumitoshi Ito , Yoshiyuki Kawashima , Takeshi Sakai , Yasushi Ishii , Yasuhiro Kanamaru , Takashi Hashimoto , Makoto Mizuno , Kousuke Okuyama , Yukiko Manabe
发明人： Fumitoshi Ito , Yoshiyuki Kawashima , Takeshi Sakai , Yasushi Ishii , Yasuhiro Kanamaru , Takashi Hashimoto , Makoto Mizuno , Kousuke Okuyama , Yukiko Manabe
IPC分类号： G11C11/34
CPC分类号： H01L27/11568 , G11C16/0466 , H01L21/28282 , H01L27/115 , H01L29/42344 , H01L29/66833 , H01L29/792
摘要： The degree of integration and the number of rewriting of a semiconductor device having a nonvolatile memory element are improved. A first MONOS nonvolatile-memory-element and a second MONOS nonvolatile-memory-element having a large gate width compared with the first MONOS nonvolatile-memory-element are mounted together on the same substrate, and the first MONOS nonvolatile-memory-element is used for storing program data which is scarcely rewritten, and the second MONOS nonvolatile-memory-element is used for storing processed data which is frequently rewritten.
摘要翻译：改善了具有非易失性存储元件的半导体器件的积分度和重写次数。与第一MONOS非易失性存储元件相比，具有大门宽度的第一MONOS非易失性存储元件和第二MONOS非易失性存储元件一起安装在同一衬底上，并且第一MONOS非易失性存储元件是用于存储几乎不被重写的程序数据，并且第二MONOS非易失性存储元件用于存储频繁重写的处理数据。

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