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    • 4. 发明申请
    • METHOD FOR MANUFACTURING SOI SUBSTRATE
    • 制造SOI衬底的方法
    • US20120164817A1
    • 2012-06-28
    • US13411864
    • 2012-03-05
    • Takeshi SHICHIJunichi KOEZUKAHideto OHNUMAShunpei YAMAZAKI
    • Takeshi SHICHIJunichi KOEZUKAHideto OHNUMAShunpei YAMAZAKI
    • H01L21/46
    • H01L27/1266H01L21/76254H01L27/1214H01L29/66772
    • The present invention provides a method for manufacturing an SOI substrate, to improve planarity of a surface of a single crystal semiconductor layer after separation by favorably separating a single crystal semiconductor substrate even in the case where a non-mass-separation type ion irradiation method is used, and to improve planarity of a surface of a single crystal semiconductor layer after separation as well as to improve throughput. The method includes the steps of irradiating a single crystal semiconductor substrate with accelerated ions by an ion doping method while the single crystal semiconductor substrate is cooled to form an embrittled region in the single crystal semiconductor substrate; bonding the single crystal semiconductor substrate and a base substrate with an insulating layer interposed therebetween; and separating the single crystal semiconductor substrate along the embrittled region to form a single crystal semiconductor layer over the base substrate with the insulating layer interposed therebetween.
    • 本发明提供一种制造SOI衬底的方法,即使在非质量分离型离子照射方法为非质子分离型离子照射方法的情况下,通过有利地分离单晶半导体衬底来提高分离后的单晶半导体层的表面的平面性 并且在分离之后提高单晶半导体层的表面的平面性以及提高生产量。 该方法包括以下步骤:当单晶半导体衬底被冷却以在单晶半导体衬底中形成脆化区域时,通过离子掺杂方法照射具有加速离子的单晶半导体衬底; 将单晶半导体衬底和基底衬底之间插入绝缘层; 并且沿着脆化区域分离单晶半导体衬底,以在基底衬底上形成绝缘层,形成单晶半导体层。
    • 6. 发明申请
    • METHOD FOR MANUFACTURING SOI SUBSTRATE
    • 制造SOI衬底的方法
    • US20090098739A1
    • 2009-04-16
    • US12244414
    • 2008-10-02
    • Hideto OHNUMATakashi SHINGUTetsuya KAKEHATAKazutaka KURIKIShunpei YAMAZAKI
    • Hideto OHNUMATakashi SHINGUTetsuya KAKEHATAKazutaka KURIKIShunpei YAMAZAKI
    • H01L21/31
    • H01L27/1266H01L21/2007H01L21/76254H01L27/1214H01L29/66772
    • An object of the present invention is to provide a method for manufacturing an SOI substrate provided with a semiconductor layer which can be used practically even where a substrate having a low upper temperature limit such as a glass substrate is used. The manufacturing method compromises the steps of preparing a semiconductor substrate provided with a bonding layer formed on a surface thereof and a separation layer formed at a predetermined depth from the surface thereof, bonding the bonding layer to the base substrate having a distortion point of 700° C. or lower so that the semiconductor substrate and the base substrate face each other, and separating a part of the semiconductor substrate at the separation layer by heat treatment in order to form a single-crystal semiconductor layer over the base substrate. In the manufacturing method, a substrate which shrinks isotropically at least by the heat treatment is used as the base substrate.
    • 本发明的目的是提供一种制造具有半导体层的SOI衬底的方法,即使在使用诸如玻璃衬底的上限温度低的衬底的情况下也可以使用。 制造方法损害了制备其表面上形成有接合层的半导体衬底和从其表面形成在预定深度的分离层的步骤,将接合层粘合到具有700°的变形点的基底 C.或更低,使得半导体衬底和基底基板彼此面对,并且通过热处理在分离层处分离半导体衬底的一部分,以在基底衬底上形成单晶半导体层。 在制造方法中,使用至少通过热处理各向同性收缩的基板作为基底。
    • 7. 发明申请
    • METHOD FOR MANUFACTURING SOI SUBSTRATE
    • 制造SOI衬底的方法
    • US20110263096A1
    • 2011-10-27
    • US13177584
    • 2011-07-07
    • Hideto OHNUMAShunpei YAMAZAKI
    • Hideto OHNUMAShunpei YAMAZAKI
    • H01L21/265
    • H01L21/76254H01L21/302
    • A method is demonstrated to manufacture SOI substrates with high throughput while resources can be effectively used. The present invention is characterized by the feature in which the following process A and process B are repeated. The process A includes irradiation of a surface of a semiconductor wafer with cluster ions to form a separation layer in the semiconductor wafer. The semiconductor wafer and a substrate having an insulating surface are then overlapped with each other and bonded, which is followed by thermal treatment to separate the semiconductor wafer at or around the separation layer. A separation wafer and an SOT substrate which has a crystalline semiconductor layer over the substrate having the insulating surface are simultaneously obtained by the process A. The process B includes treatment of the separation wafer for reusing, which allows the separation wafer to be successively subjected to the process A.
    • 一种方法被证明可以制造具有高产量的SOI衬底,同时可以有效地利用资源。 本发明的特征在于重复以下处理A和方法B. 方法A包括用聚簇离子照射半导体晶片的表面以在半导体晶片中形成分离层。 然后将半导体晶片和具有绝缘表面的基板彼此重叠并结合,然后进行热处理以在分离层处或周围分离半导体晶片。 通过方法A同时获得在具有绝缘表面的基板上具有结晶半导体层的分离晶片和SOT基板。工艺B包括处理用于再利用的分离晶片,其允许分离晶片连续地经受 过程A.
    • 8. 发明申请
    • METHOD OF MANUFACTURING SOI SUBSTRATE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
    • 制造SOI衬底的方法和制造半导体器件的方法
    • US20110097872A1
    • 2011-04-28
    • US12986582
    • 2011-01-07
    • Shunpei YAMAZAKIHideto OHNUMA
    • Shunpei YAMAZAKIHideto OHNUMA
    • H01L21/3105
    • H01L21/2007H01L21/76254
    • A first substrate of single-crystal silicon within which is formed an embrittled layer and over a surface of which is formed a first insulating film is provided; a second insulating film is formed over a surface of a second substrate; at least one surface of either the first insulating film or the second insulating film is exposed to a plasma atmosphere or an ion atmosphere, and that surface of the first insulating film or the second insulating film is activated; the first substrate and the second substrate are bonded together with the first insulating film and the second insulating film interposed therebetween; a single-crystal silicon film is separated from the first substrate at an interface of the embrittled layer of the first substrate, and a thin film single-crystal silicon film is formed over the second substrate with the first insulating film and the second insulating film interposed therebetween.
    • 提供了单晶硅的第一基板,其中形成有脆化层,并且其表面上形成有第一绝缘膜; 在第二基板的表面上形成第二绝缘膜; 第一绝缘膜或第二绝缘膜的至少一个表面暴露于等离子体气氛或离子气氛中,并且第一绝缘膜或第二绝缘膜的表面被激活; 第一基板和第二基板与第一绝缘膜和第二绝缘膜接合在一起; 在第一衬底的脆化层的界面处将单晶硅膜与第一衬底分离,并且在第二衬底上形成薄膜单晶硅膜,其中第一绝缘膜和第二绝缘膜插入 之间。
    • 10. 发明申请
    • METHOD FOR MANUFACTURING SOI SUBSTRATE
    • 制造SOI衬底的方法
    • US20090098704A1
    • 2009-04-16
    • US12244073
    • 2008-10-02
    • Hideto OHNUMAShunpei YAMAZAKI
    • Hideto OHNUMAShunpei YAMAZAKI
    • H01L21/762
    • H01L21/76254H01L21/302
    • A method is demonstrated to manufacture SOI substrates with high throughput while resources can be effectively used. The present invention is characterized by the feature in which the following process A and process B are repeated. The process A includes irradiation of a surface of a semiconductor wafer with cluster ions to form a separation layer in the semiconductor wafer. The semiconductor wafer and a substrate having an insulating surface are then overlapped with each other and bonded, which is followed by thermal treatment to separate the semiconductor wafer at or around the separation layer. A separation wafer and an SOI substrate which has a crystalline semiconductor layer over the substrate having the insulating surface are simultaneously obtained by the process A. The process B includes treatment of the separation wafer for reusing, which allows the separation wafer to be successively subjected to the process A.
    • 一种方法被证明可以制造具有高产量的SOI衬底,同时可以有效地利用资源。 本发明的特征在于重复以下处理A和方法B. 方法A包括用聚簇离子照射半导体晶片的表面以在半导体晶片中形成分离层。 然后将半导体晶片和具有绝缘表面的基板彼此重叠并结合,然后进行热处理以在分离层处或周围分离半导体晶片。 通过工艺A同时获得在具有绝缘表面的衬底上具有晶体半导体层的分离晶片和SOI衬底。工艺B包括处理用于再利用的分离晶片,其允许分离晶片依次经受 过程A.