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    • 3. 发明授权
    • Self-timed semiconductor integrated circuit device
    • 自定时半导体集成电路器件
    • US5612640A
    • 1997-03-18
    • US308303
    • 1994-09-19
    • Fumio MurabayashiTatsumi YamauchiYutaka Kobayashi
    • Fumio MurabayashiTatsumi YamauchiYutaka Kobayashi
    • G06F7/00G06F9/38G06F15/78H04L7/00H03K5/13
    • G06F9/3869
    • A semiconductor integrated circuit device is equipped with a series of data handling stages, at least one of which includes a plurality of functional blocks arranged in parallel, a connecting means for connecting the functional blocks to functional blocks in a subsequent data handling stage, and a detection means for detecting data flow along a first connection in the connecting means. The detection means is included within a control means which controls data flow through at least one other connection in the connecting means based on the detection of data flow through the first connection in the connecting means. In a second embodiment, the semiconductor integrated circuit device includes a plurality of functional blocks arranged in a series for handling data along the series, a connecting means for handling data flow between at least two of the functional blocks, a data detecting means for detecting data flow along a selected connection in the connecting means, and for controlling data flow along another connection in the connecting means based on the detection of data flow through the selected connection.
    • 半导体集成电路器件配备有一系列数据处理级,其中至少一个包括并行布置的多个功能块,用于在后续数据处理阶段将功能块连接到功能块的连接装置,以及 检测装置,用于沿连接装置中的第一连接检测数据流。 检测装置包括在控制装置内,该控制装置基于通过连接装置中的第一连接的数据流的检测来控制连接装置中的至少一个其他连接的数据流。 在第二实施例中,半导体集成电路器件包括一系列用于处理串联数据的功能块,用于处理至少两个功能块之间的数据流的连接装置,用于检测数据的数据检测装置 沿着所述连接装置中的所选连接流动,并且用于基于通过所选择的连接的数据流的检测来控制沿连接装置中的另一连接的数据流。
    • 8. 发明授权
    • Floating-point arithmetic processing apparatus
    • 浮点算术处理装置
    • US5931895A
    • 1999-08-03
    • US789430
    • 1997-01-29
    • Hiromichi YamadaFumio MurabayashiTatsumi YamauchiNoriyasu IdoYoshikazu KiyoshigeTakahiro NishiyamaEiki Kamada
    • Hiromichi YamadaFumio MurabayashiTatsumi YamauchiNoriyasu IdoYoshikazu KiyoshigeTakahiro NishiyamaEiki Kamada
    • G06F7/38G06F5/01G06F7/00G06F7/483G06F7/74G06F7/76G06F7/52
    • G06F5/012G06F7/483
    • A floating-point arithmetic processing apparatus has a circuit for generating a limit value for normalization shift by subtracting an exponent of the minimum value of a normalized number from a value of an exponent of an intermediate result, and a circuit for generating, as a normalization shift number, smaller one of a shift number necessary for making the mantissa of the intermediate result a normalized number and the limit value for normalization shift. The floating-point arithmetic processing apparatus further has a circuit having a circuit for detecting a condition for overflow before the rounding process and a circuit for generating a value in the case of overflow, so that a predetermined value is delivered as a final result only when the overflow condition is detected before the rounding process but in the other case, a result obtained by performing the normalization process and the rounding process is delivered. When no overflow takes place before the rounding process but overflow occurs after the rounding process, the result obtained by performing the normalization process and the rounding process is delivered as a final result.
    • 一种浮点运算处理装置,具有通过从中间结果的指数的值减去归一化数的最小值的指数来生成用于归一化偏移的极限值的电路,以及生成作为归一化的归一化的电路 移位数,使中间结果的尾数所需的移位数中的较小的一个是归一化数,以及归一化移位的极限值。 浮点运算处理装置还具有电路,该电路具有用于检测在舍入处理之前的溢出条件的电路和用于在溢出的情况下产生值的电路,从而仅当预定值仅在 在舍入处理之前检测到溢出条件,但是在另一种情况下,通过执行归一化处理和舍入处理获得的结果被传送。 在四舍五入处理之前没有发生溢出,而在舍入处理后发生溢出的情况下,通过执行归一化处理和舍入处理获得的结果作为最终结果被传递。
    • 10. 发明授权
    • Circuit for protecting a load from an overvoltage
    • 用于保护负载免受过电压的电路
    • US06538866B1
    • 2003-03-25
    • US09526737
    • 2000-03-16
    • Keiji HanzawaMasahiro MatsumotoFumio MurabayashiTatsumi YamauchiHiromichi YamadaKohei SakuraiAtsushi Miyazaki
    • Keiji HanzawaMasahiro MatsumotoFumio MurabayashiTatsumi YamauchiHiromichi YamadaKohei SakuraiAtsushi Miyazaki
    • H02H900
    • H01L27/0251H02H9/04
    • A circuit for protecting a load from an overvoltage can be integrated together with the load on the same chip by an MOS transistor manufacture process. This overvoltage protecting circuit is composed of a surge protection circuit, an overvoltage detecting circuit and a switching circuit. The surge protection circuit including two MOS transistors operates so that a surge voltage applied to a power supply receiving terminal is clamped by virtue of the source-drain breakdown voltage of the two MOS transistors, thereby absorbing the surge energy. The overvoltage detecting circuit including two MOS transistors operates so that a DC voltage supplied from the surge protection circuit is monitored with the source-drain voltage of the two MOS transistors taken as a reference voltage, thereby detecting an overvoltage. An overvoltage detection output brings an MOS transistor of the switching circuit into a turned-off condition to protect the load.
    • 可以通过MOS晶体管制造工艺将用于保护负载的过电压的电路与负载集成在同一芯片上。 该过电压保护电路由浪涌保护电路,过电压检测电路和开关电路构成。 包括两个MOS晶体管的浪涌保护电路工作,借助于两个MOS晶体管的源极 - 漏极击穿电压来钳位施加到电源接收端的浪涌电压,从而吸收浪涌能量。 包括两个MOS晶体管的过电压检测电路进行工作,从而以两个MOS晶体管的源极 - 漏极电压作为参考电压来监视从浪涌保护电路提供的直流电压,从而检测过电压。 过电压检测输出使开关电路的MOS晶体管成为关断状态,以保护负载。