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    • 3. 发明授权
    • Semiconductor device
    • 半导体器件
    • US5895931A
    • 1999-04-20
    • US861886
    • 1997-05-22
    • Nobuhiro Sakurai
    • Nobuhiro Sakurai
    • H01L29/68H01L29/205H01L29/772H01L29/80H01L29/808H01L29/06H01L31/0328H01L31/0336H01L31/072
    • H01L29/772H01L29/802H01L29/8083
    • A barrier layer (AlAs) is formed on a source layer (n-GaAs), and a drain layer (n-GaAs) and a gate layer (p-GaAs) adjacent to the drain layer are formed on the barrier layer. If the drain layer is biased to a plus voltage with the source layer, then a tunneling current will flow by way of the barrier layer. By applying a voltage to the gate layer so that the p-n junction is biased in the reverse direction, the potential on the gate side of the channel rises and the tunneling current decreases. Also, the channel width decreases due to the spread of the depletion layer to the channel side, and consequently, the current of the drain layer decreases. Thus, based on the voltage applied to the gate layer, the drain current can be controlled.
    • 在源极层(n-GaAs)上形成阻挡层(AlAs),在阻挡层上形成与漏极层相邻的漏极层(n-GaAs)和栅极层(p-GaAs)。 如果漏极层与源极层偏置为正电压,则隧穿电流将通过势垒层流动。 通过向栅极层施加电压使p-n结反向偏置,沟道栅侧的电位上升,隧道电流减小。 此外,由于耗尽层扩散到沟道侧,沟道宽度减小,因此漏极层的电流减小。 因此,基于施加到栅极层的电压,可以控制漏极电流。
    • 5. 发明授权
    • Force sensor chip
    • 力传感器芯片
    • US07536922B2
    • 2009-05-26
    • US11889438
    • 2007-08-13
    • Nobuhiro SakuraiTakeshi Ohsato
    • Nobuhiro SakuraiTakeshi Ohsato
    • G01D7/00
    • G01L1/205
    • In a force sensor chip, a semiconductor substrate includes: a plurality of operating parts each including an external-force acting area section and a non-deforming section; a supporting part for supporting the operating parts, and a plurality of connecting parts for connecting the operating parts and the supporting part. Strain resistance elements are provided on deformation-generating sections of the connecting parts. The plurality of operating parts are provided, in corresponding relation to the plurality of connecting parts, between the connecting parts and the supporting part.
    • 在力传感器芯片中,半导体衬底包括:多个操作部件,每个操作部件包括外力作用区域部分和非变形部分; 用于支撑操作部件的支撑部件和用于连接操作部件和支撑部件的多个连接部件。 应变电阻元件设置在连接部件的变形产生部分上。 多个操作部件以与多个连接部件相对应的方式设置在连接部件和支撑部件之间。
    • 8. 发明授权
    • Multi-axis force sensor and acceleration sensor
    • 多轴力传感器和加速度传感器
    • US08250934B2
    • 2012-08-28
    • US12702858
    • 2010-02-09
    • Nobuhiro Sakurai
    • Nobuhiro Sakurai
    • G01L1/22
    • G01P15/18G01L5/161G01P15/123G01P2015/0842
    • There is provided a multi-axis force sensor including first and second bridge circuit groups detecting resistances of respective first and second groups of strain resistance elements provided at respective strain producing portions. The strain producing portions are formed on two axes intersecting with respect to each other at a right angle. The first group of strain resistance elements are arranged on one axis across an action portion so as to face with respect to each other, and the second group of strain resistance elements are arranged on another axis across the action portion so as to face with respect to each other. The first bridge circuit groups respectively output a positive voltage when receiving tensile force, and the second bridge circuit groups respectively output a negative voltage when receiving tensile force.
    • 提供了一种多轴力传感器,其包括第一和第二桥接电路组,其检测设置在各个应变产生部分处的各个第一和第二组应变电阻元件的电阻。 应变产生部分以相对于彼此以直角相交的两个轴线形成。 第一组应变电阻元件布置在跨越作用部分的一个轴上以相对于彼此面对,并且第二组应变阻力元件布置在跨越作用部分的另一个轴上,以相对于 彼此。 第一桥电路组在接收拉力时分别输出正电压,第二桥电路组在接收拉力时分别输出负电压。