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1. 发明申请

US20050227494A1 Processing system and method for treating a substrate 审中-公开
标题翻译：用于处理基材的处理系统和方法
公开(公告)号：US20050227494A1
公开(公告)日：2005-10-13
申请号：US10812347
申请日：2004-03-30
申请人： Fumihiko Higuchi , Hiroyuki Takahashi , Akiteru Ko , Hongyu Yue , Asao Yamashita , Hiromitsu Kambara
发明人： Fumihiko Higuchi , Hiroyuki Takahashi , Akiteru Ko , Hongyu Yue , Asao Yamashita , Hiromitsu Kambara
IPC分类号： H01L21/311 , H01L21/66 , H01L21/302
CPC分类号： H01L22/20 , H01L21/31116 , H01L2924/0002 , H01L2924/00
摘要： A method and system for trimming a feature on a substrate is described. During a chemical treatment of the substrate, the substrate is exposed to a gaseous chemistry, such as HF/NH3, under controlled conditions including surface temperature and gas pressure. An inert gas is also introduced, and the flow rate of the inert gas is selected in order to affect a target trim amount during the trimming of the feature.
摘要翻译：描述了用于修整衬底上的特征的方法和系统。在基板的化学处理期间，在包括表面温度和气体压力在内的受控条件下将基板暴露于气态化学物质，例如HF / NH 3。还引入惰性气体，并且选择惰性气体的流量以便在修整特征期间影响目标修整量。

2. 发明授权

US06852584B1 Method of trimming a gate electrode structure 有权
标题翻译：修剪栅电极结构的方法
公开(公告)号：US06852584B1
公开(公告)日：2005-02-08
申请号：US10756759
申请日：2004-01-14
申请人： Lee Chen , Hongyu Yue , Hiromitsu Kambara
发明人： Lee Chen , Hongyu Yue , Hiromitsu Kambara
IPC分类号： H01L21/28 , H01L21/3213 , H01L21/336
CPC分类号： H01L21/32134 , H01L21/28123 , H01L21/32136 , H01L21/32137
摘要： A method and processing tool are provided for trimming a gate electrode structure containing a gate electrode layer with a first dimension. A reaction layer is formed through reaction with the gate electrode structure. The reaction layer is the selectively removed from the unreacted portion of the gate electrode structure by chemical etching, thereby forming a trimmed gate electrode structure with a second dimension that is smaller than the first dimension. The trimming process can be carried out under process conditions where formation of the reaction layer is substantially self-limiting. The trimming process can be repeated to further reduce the dimension of the gate electrode structure.
摘要翻译：提供了一种用于修整含有第一尺寸的栅电极层的栅电极结构的方法和处理工具。通过与栅电极结构反应形成反应层。反应层通过化学蚀刻从栅电极结构的未反应部分选择性地除去，从而形成具有小于第一尺寸的第二尺寸的修整栅电极结构。修整过程可以在反应层的形成基本上是自限制的工艺条件下进行。可以重复修整过程以进一步减小栅电极结构的尺寸。

3. 发明授权

US06893975B1 System and method for etching a mask 有权
公开(公告)号：US06893975B1
公开(公告)日：2005-05-17
申请号：US10813570
申请日：2004-03-31
申请人： Hongyu Yue , Asao Yamashita
发明人： Hongyu Yue , Asao Yamashita
IPC分类号： H01L21/311 , H01L21/66 , H01L21/302
CPC分类号： H01L22/20 , H01L21/31144
摘要： A system and method for transferring a pattern from an overlying layer into an underlying layer, while laterally trimming a feature present within the pattern is described. The pattern transfer is performed using an etch process according to a process recipe, wherein at least one variable parameter within the process recipe is adjusted given a target trim amount. The adjustment of the variable parameter is achieved using a process model established for relating trim amount data with the variable parameter.

4. 发明申请

US20050221619A1 System and method for etching a mask 审中-公开
标题翻译：用于蚀刻掩模的系统和方法
公开(公告)号：US20050221619A1
公开(公告)日：2005-10-06
申请号：US11103604
申请日：2005-04-12
申请人： Hongyu Yue , Asao Yamashita
发明人： Hongyu Yue , Asao Yamashita
IPC分类号： H01L21/311 , H01L21/66 , H01L21/302
CPC分类号： H01L22/20 , H01L21/31144
摘要： A system and method for transferring a pattern from an overlying layer into an underlying layer, while laterally trimming a feature present within the pattern is described. The pattern transfer is performed using an etch process according to a process recipe, wherein at least one variable parameter within the process recipe is adjusted given a target trim amount. The adjustment of the variable parameter is achieved using a process model established for relating trim amount data with the variable parameter.
摘要翻译：描述了一种用于将图案从上层转移到下层中的系统和方法，同时横向修剪图案内存在的特征。使用根据工艺配方的蚀刻工艺执行图案转印，其中在给定目标修剪量的情况下调整处理配方内的至少一个可变参数。可变参数的调整是使用建立用于将修剪量数据与可变参数相关联的过程模型来实现的。

5. 发明授权

US07213478B2 Method for automatic configuration of processing system 有权
标题翻译：自动配置处理系统的方法
公开(公告)号：US07213478B2
公开(公告)日：2007-05-08
申请号：US10776452
申请日：2004-02-12
申请人： Satoshi Harada , Edward C. Hume, III , James E Willis , Kevin Andrew Chamness , Hieu A Lam , Hongyu Yue , David Fatke
发明人： Satoshi Harada , Edward C. Hume, III , James E Willis , Kevin Andrew Chamness , Hieu A Lam , Hongyu Yue , David Fatke
IPC分类号： G01N19/00
CPC分类号： G05B19/41865 , G05B19/41845 , G05B2219/31334 , G05B2219/32191 , G05B2219/45031 , Y02P90/16 , Y02P90/185 , Y02P90/20 , Y02P90/22 , Y02P90/86
摘要： A method of automatically configuring an Advanced Process Control (APC) system for a semiconductor manufacturing environment in which an auto-configuration script is generated for executing an auto-configuration program. The auto-configuration script activates default values for input to the auto-configuration program. The auto-configuration script is executed to generate an enabled parameter file output from the auto-configuration program. The enabled parameter file identifies parameters for statistical process control (SPC) chart generation.
摘要翻译：一种自动配置用于半导体制造环境的高级过程控制（APC）系统的方法，其中生成用于执行自动配置程序的自动配置脚本。自动配置脚本激活自动配置程序输入的默认值。执行自动配置脚本以生成从自动配置程序输出的启用参数文件。启用的参数文件识别统计过程控制（SPC）图生成的参数。

6. 发明申请

US20060048891A1 Method and apparatus for determining an etch property using an endpoint signal 有权
标题翻译：使用端点信号确定蚀刻性质的方法和装置
公开(公告)号：US20060048891A1
公开(公告)日：2006-03-09
申请号：US10531469
申请日：2003-10-31
申请人： Hongyu Yue , Hieu Lam
发明人： Hongyu Yue , Hieu Lam
IPC分类号： C23F1/00 , G01L21/30
CPC分类号： H01J37/32935 , H01J37/32963
摘要： The present invention presents a plasma processing system for etching a layer on a substrate comprising a process chamber, a diagnostic system coupled to the process chamber and configured to measure at least one endpoint signal, and a controller coupled to the diagnostic system and configured to determine in-situ at least one of an etch rate and an etch rate uniformity of the etching from the endpoint signal. Furthermore, an in-situ method of determining an etch property for etching a layer on a substrate in a plasma processing system is presented comprising the steps: providing a thickness of the layer; etching the layer on the substrate; measuring at least one endpoint signal using a diagnostic system coupled to the plasma processing system, wherein the endpoint signal comprises an endpoint transition; and determining the etch rate from a ratio of the thickness to a difference between a time during the endpoint transition and a starting time of the etching.
摘要翻译：本发明提出了一种用于蚀刻衬底上的层的等离子体处理系统，包括处理室，耦合到处理室并被配置为测量至少一个端点信号的诊断系统，以及耦合到诊断系统的控制器，并且被配置为确定从端点信号原位蚀刻速率和蚀刻速度均匀性中的至少一个。此外，提出了确定用于蚀刻等离子体处理系统中的衬底上的层的蚀刻性质的原位方法，包括以下步骤：提供该层的厚度; 蚀刻衬底上的层; 使用耦合到所述等离子体处理系统的诊断系统来测量至少一个端点信号，其中所述端点信号包括端点转换; 以及从所述厚度与所述端点转变期间的时间与所述蚀刻的开始时间之间的差的比率确定所述蚀刻速率。

7. 发明申请

US20050016947A1 Method and apparatus for endpoint detection using partial least squares 有权
标题翻译：使用偏最小二乘法进行端点检测的方法和装置
公开(公告)号：US20050016947A1
公开(公告)日：2005-01-27
申请号：US10472436
申请日：2002-03-25
申请人： David Fatke , Hongyu Yue
发明人： David Fatke , Hongyu Yue
IPC分类号： H01L21/3065 , H01J37/32 , H01L21/66 , C23F1/00
CPC分类号： H01L22/20 , H01J37/32935 , H01J37/32963 , H01L2924/0002 , H01L2924/00
摘要： An apparatus and method for detection of a feature etch completion within an etching reactor. The method includes determining a correlation matrix by recording first measured data regarding a first etch process over successive time intervals to form a first recorded data matrix, assembling a first endpoint signal matrix using target endpoint data for a specific etch process, performing a partial least squares analysis on the recorded data matrix and the first endpoint signal matrix to refine the recorded data matrix, and computing a correlation matrix based upon the refined recorded data matrix and the first endpoint signal matrix. The method further includes performing a second etch process to form a second recorded data matrix. The correlation matrix and the second recorded data matrix are analyzed to determine whether an endpoint of the second etch process has been achieved.
摘要翻译：用于检测蚀刻反应器内的特征蚀刻完成的装置和方法。该方法包括通过在连续时间间隔上记录关于第一蚀刻处理的第一测量数据来形成相关矩阵以形成第一记录数据矩阵，使用用于特定蚀刻工艺的目标端点数据组装第一端点信号矩阵，执行偏最小二乘法对所记录的数据矩阵和第一端点信号矩阵进行分析以细化记录的数据矩阵，以及基于精细记录的数据矩阵和第一端点信号矩阵来计算相关矩阵。该方法还包括执行第二蚀刻工艺以形成第二记录数据矩阵。分析相关矩阵和第二记录数据矩阵以确定是否已经实现了第二蚀刻工艺的端点。

8. 发明申请

US20050015176A1 Method for automatic configuration of processing system 有权
标题翻译：自动配置处理系统的方法
公开(公告)号：US20050015176A1
公开(公告)日：2005-01-20
申请号：US10776452
申请日：2004-02-12
申请人： Satoshi Harada , Edward Hume , James Willis , Kevin Chamness , Hieu Lam , Hongyu Yue , David Fatke
发明人： Satoshi Harada , Edward Hume , James Willis , Kevin Chamness , Hieu Lam , Hongyu Yue , David Fatke
IPC分类号： G05B19/418 , G06F19/00
CPC分类号： G05B19/41865 , G05B19/41845 , G05B2219/31334 , G05B2219/32191 , G05B2219/45031 , Y02P90/16 , Y02P90/185 , Y02P90/20 , Y02P90/22 , Y02P90/86
摘要： A method of automatically configuring an Advanced Process Control (APC) system for a semiconductor manufacturing environment in which an auto-configuration script is generated for executing an auto-configuration program. The auto-configuration script activates default values for input to the auto-configuration program. The auto-configuration script is executed to generate an enabled parameter file output from the auto-configuration program. The enabled parameter file identifies parameters for statistical process control (SPC) chart generation.
摘要翻译：一种自动配置用于半导体制造环境的高级过程控制（APC）系统的方法，其中生成用于执行自动配置程序的自动配置脚本。自动配置脚本激活自动配置程序输入的默认值。执行自动配置脚本以生成从自动配置程序输出的启用参数文件。启用的参数文件识别统计过程控制（SPC）图生成的参数。

9. 发明授权

US08895942B2 Dielectric treatment module using scanning IR radiation source 有权
标题翻译：介质处理模块采用扫描红外辐射源
公开(公告)号：US08895942B2
公开(公告)日：2014-11-25
申请号：US12211640
申请日：2008-09-16
申请人： Junjun Liu , Jacques Faguet , Eric M. Lee , Dorel I. Toma , Hongyu Yue
发明人： Junjun Liu , Jacques Faguet , Eric M. Lee , Dorel I. Toma , Hongyu Yue
IPC分类号： H01L21/67 , B23K26/08 , B23K26/12 , C23C16/56
CPC分类号： H01L21/67115 , B23K26/082 , B23K26/12 , B23K26/127 , C23C16/56
摘要： A system for curing a low dielectric constant (low-k) dielectric film on a substrate is described, wherein the dielectric constant of the low-k dielectric film is less than a value of approximately 4. The system comprises one or more process modules configured for exposing the low-k dielectric film to electromagnetic (EM) radiation, such as infrared (IR) radiation and ultraviolet (UV) radiation.
摘要翻译：描述了用于固化衬底上的低介电常数（低k）电介质膜的系统，其中低k电介质膜的介电常数小于约4的值。该系统包括一个或多个工艺模块配置用于将低k电介质膜暴露于诸如红外（IR）辐射和紫外（UV）辐射的电磁（EM）辐射。

10. 发明授权

US08048326B2 Method and apparatus for determining an etch property using an endpoint signal 有权
标题翻译：使用端点信号确定蚀刻性质的方法和装置
公开(公告)号：US08048326B2
公开(公告)日：2011-11-01
申请号：US10531469
申请日：2003-10-31
申请人： Hongyu Yue , Hieu A. Lam
发明人： Hongyu Yue , Hieu A. Lam
IPC分类号： C23F1/00 , G01L21/30
CPC分类号： H01J37/32935 , H01J37/32963
摘要： The present invention presents a plasma processing system for etching a layer on a substrate comprising a process chamber, a diagnostic system coupled to the process chamber and configured to measure at least one endpoint signal, and a controller coupled to the diagnostic system and configured to determine in-situ at least one of an etch rate and an etch rate uniformity of the etching from the endpoint signal. Furthermore, an in-situ method of determining an etch property for etching a layer on a substrate in a plasma processing system is presented comprising the steps: providing a thickness of the layer; etching the layer on the substrate; measuring at least one endpoint signal using a diagnostic system coupled to the plasma processing system, wherein the endpoint signal comprises an endpoint transition; and determining the etch rate from a ratio of the thickness to a difference between a time during the endpoint transition and a starting time of the etching.
摘要翻译：本发明提出了一种用于蚀刻衬底上的层的等离子体处理系统，包括处理室，耦合到处理室并被配置为测量至少一个端点信号的诊断系统，以及耦合到诊断系统的控制器，并且被配置为确定从端点信号原位蚀刻速率和蚀刻速度均匀性中的至少一个。此外，提出了确定用于蚀刻等离子体处理系统中的衬底上的层的蚀刻性质的原位方法，包括以下步骤：提供该层的厚度; 蚀刻衬底上的层; 使用耦合到所述等离子体处理系统的诊断系统来测量至少一个端点信号，其中所述端点信号包括端点转换; 以及从所述厚度与所述端点转变期间的时间与所述蚀刻的开始时间之间的差的比率确定所述蚀刻速率。

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