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1. 发明申请

US20050227494A1 Processing system and method for treating a substrate 审中-公开
标题翻译：用于处理基材的处理系统和方法
公开(公告)号：US20050227494A1
公开(公告)日：2005-10-13
申请号：US10812347
申请日：2004-03-30
申请人： Fumihiko Higuchi , Hiroyuki Takahashi , Akiteru Ko , Hongyu Yue , Asao Yamashita , Hiromitsu Kambara
发明人： Fumihiko Higuchi , Hiroyuki Takahashi , Akiteru Ko , Hongyu Yue , Asao Yamashita , Hiromitsu Kambara
IPC分类号： H01L21/311 , H01L21/66 , H01L21/302
CPC分类号： H01L22/20 , H01L21/31116 , H01L2924/0002 , H01L2924/00
摘要： A method and system for trimming a feature on a substrate is described. During a chemical treatment of the substrate, the substrate is exposed to a gaseous chemistry, such as HF/NH3, under controlled conditions including surface temperature and gas pressure. An inert gas is also introduced, and the flow rate of the inert gas is selected in order to affect a target trim amount during the trimming of the feature.
摘要翻译：描述了用于修整衬底上的特征的方法和系统。在基板的化学处理期间，在包括表面温度和气体压力在内的受控条件下将基板暴露于气态化学物质，例如HF / NH 3。还引入惰性气体，并且选择惰性气体的流量以便在修整特征期间影响目标修整量。

2. 发明授权

US08501628B2 Differential metal gate etching process 有权
标题翻译：差分金属栅极蚀刻工艺
公开(公告)号：US08501628B2
公开(公告)日：2013-08-06
申请号：US12729538
申请日：2010-03-23
申请人： Vinh Hoang Luong , Hiroyuki Takahashi , Akiteru Ko , Asao Yamashita , Vaidya Bharadwaj , Takashi Enomoto , Daniel J. Prager
发明人： Vinh Hoang Luong , Hiroyuki Takahashi , Akiteru Ko , Asao Yamashita , Vaidya Bharadwaj , Takashi Enomoto , Daniel J. Prager
IPC分类号： H01L21/302
CPC分类号： H01L21/32136 , H01J37/32091 , H01J37/32165 , H01J37/3266 , H01L21/823437 , H01L21/823456
摘要： A method for etching a differential metal gate structure on a substrate is described. The differential metal gate structure includes a metal gate layer overlying a high dielectric constant (high-k) dielectric layer, wherein the metal gate layer comprises a different thickness at different regions on the substrate. The metal gate layer is patterned by using a plasma etching process, wherein at least one etch step includes forming plasma using a halogen-containing gas and at least one etch step includes forming plasma using an additive gas having as atomic constituents C, H, and F.
摘要翻译：描述了蚀刻基板上的差分金属栅极结构的方法。差分金属栅极结构包括覆盖高介电常数（高k）电介质层的金属栅极层，其中金属栅极层在衬底上的不同区域包括不同的厚度。通过使用等离子体蚀刻工艺对金属栅极层进行构图，其中至少一个蚀刻步骤包括使用含卤素气体形成等离子体，并且至少一个蚀刻步骤包括使用具有原子成分C，H和 F。

3. 发明授权

US07709397B2 Method and system for etching a high-k dielectric material 失效
标题翻译：蚀刻高k电介质材料的方法和系统
公开(公告)号：US07709397B2
公开(公告)日：2010-05-04
申请号：US10852685
申请日：2004-05-25
申请人： Lee Chen , Hiromitsu Kambara , Nobuhiro Iwama , Akiteru Ko , Hiromasa Mochiki , Masaaki Hagihara
发明人： Lee Chen , Hiromitsu Kambara , Nobuhiro Iwama , Akiteru Ko , Hiromasa Mochiki , Masaaki Hagihara
IPC分类号： H01L21/302
CPC分类号： H01L21/31122
摘要： A method for etching a high-k dielectric layer on a substrate in a plasma processing system is described. The high-k dielectric layer can, for example, comprise HfO2. The method comprises elevating the temperature of the substrate above 200° C. (i.e., typically of order 400° C.), introducing a process gas comprising a halogen-containing gas, igniting a plasma from the process gas, and exposing the substrate to the plasma. The process gas can further include a reduction gas in order to improve the etch rate of HfO2 relative to Si and SiO2.
摘要翻译：描述了在等离子体处理系统中蚀刻衬底上的高k电介质层的方法。高k电介质层可以例如包含HfO 2。该方法包括将衬底的温度升高到200℃以上（即，通常为400℃），引入包含含卤素气体的工艺气体，从工艺气体点燃等离子体，并将衬底暴露于等离子体。工艺气体可以进一步包括还原气体，以便提高HfO 2相对于Si和SiO 2的蚀刻速率。

4. 发明申请

US20050164511A1 Method and system for etching a high-k dielectric material 失效
标题翻译：蚀刻高k电介质材料的方法和系统
公开(公告)号：US20050164511A1
公开(公告)日：2005-07-28
申请号：US10852685
申请日：2004-05-25
申请人： Lee Chen , Hiromitsu Kambara , Nobuhiro Iwama , Akiteru Ko , Hiromasa Mochiki , Masaaki Hagihara
发明人： Lee Chen , Hiromitsu Kambara , Nobuhiro Iwama , Akiteru Ko , Hiromasa Mochiki , Masaaki Hagihara
IPC分类号： H01L21/00 , H01L21/311 , H01L21/324 , H01L21/336 , H01L21/461 , H05H1/24
CPC分类号： H01L21/31122
摘要： A method for etching a high-k dielectric layer on a substrate in a plasma processing system is described. The high-k dielectric layer can, for example, comprise HfO2. The method comprises elevating the temperature of the substrate above 2000°C. (i.e., typically of order 400° C.), introducing a process gas comprising a halogen-containing gas, igniting a plasma from the process gas, and exposing the substrate to the plasma. The process gas can further include a reduction gas in order to improve the etch rate of HfO2 relative to Si and SiO2.
摘要翻译：描述了在等离子体处理系统中蚀刻衬底上的高k电介质层的方法。高k电介质层可以例如包括HfO 2 2。该方法包括将基板的温度升高到高于2000℃。（即通常为400℃），引入包含含卤素气体的工艺气体，点燃来自工艺气体的等离子体，并将衬底暴露于等离子体。工艺气体可以进一步包括还原气体，以便提高HfO 2相对于Si和SiO 2的蚀刻速率。

5. 发明申请

US20080217294A1 METHOD AND SYSTEM FOR ETCHING A HAFNIUM CONTAINING MATERIAL 审中-公开
标题翻译：用于蚀刻含铪材料的方法和系统
公开(公告)号：US20080217294A1
公开(公告)日：2008-09-11
申请号：US11684072
申请日：2007-03-09
申请人： Akiteru Ko , Takashi Enomoto , Asao Yamashita
发明人： Akiteru Ko , Takashi Enomoto , Asao Yamashita
IPC分类号： B44C1/22 , G06F19/00
CPC分类号： H01L21/31111 , H01J37/32091 , H01J37/321 , H01J2237/334
摘要： A method of etching a hafnium containing layer includes disposing a substrate having the hafnium containing layer in a plasma processing system, wherein a mask layer defining a pattern therein overlies the hafnium containing layer. A process gas including a HBr gas is introduced to the plasma processing system, and a plasma is formed from the process gas in the plasma processing system. The hafnium containing layer is exposed to the plasma in order to treat the hafnium containing layer. The hafnium containing layer is then wet etched using a dilute HF wet etch process.
摘要翻译：蚀刻含铪层的方法包括将具有含铪层的基板设置在等离子体处理系统中，其中限定图案的掩模层覆盖在含铪层上。将包括HBr气体的工艺气体引入等离子体处理系统中，并且从等离子体处理系统中的处理气体形成等离子体。将含铪层暴露于等离子体以处理含铪层。然后使用稀的HF湿蚀刻工艺对含铪层进行湿法蚀刻。

6. 发明授权

US08282844B2 Method for etching metal nitride with high selectivity to other materials 有权
标题翻译：高选择性地蚀刻金属氮化物的方法
公开(公告)号：US08282844B2
公开(公告)日：2012-10-09
申请号：US11832382
申请日：2007-08-01
申请人： Akiteru Ko , Hiroyuki Takahashi , Masayuki Sawataishi
发明人： Akiteru Ko , Hiroyuki Takahashi , Masayuki Sawataishi
IPC分类号： B44C1/22
CPC分类号： H01L21/32136 , H01L21/67069
摘要： A method and system of etching a metal nitride, such as titanium nitride, is described. The etching process comprises introducing a process composition having a halogen containing gas, such as Cl2, HBr, or BCl3, and a hydrocarbon gas having the chemical formula CxHy, where x and y are equal to unity or greater.
摘要翻译：描述了蚀刻诸如氮化钛的金属氮化物的方法和系统。蚀刻方法包括引入具有含卤素气体的工艺组合物，例如Cl 2，HBr或BCl 3，以及具有化学式C x H y的烃气体，其中x和y等于或大于1。

7. 发明授权

US08334083B2 Etch process for controlling pattern CD and integrity in multi-layer masks 有权
标题翻译：用于控制图案CD的蚀刻过程和多层蒙版的完整性
公开(公告)号：US08334083B2
公开(公告)日：2012-12-18
申请号：US13053215
申请日：2011-03-22
申请人： Vinh Hoang Luong , Akiteru Ko
发明人： Vinh Hoang Luong , Akiteru Ko
IPC分类号： G03F1/50 , G03F1/54 , G03F7/00
CPC分类号： H01L21/31144 , H01L21/0337 , H01L21/31122 , H01L21/31138 , H01L22/12 , H01L22/20 , H01L22/26
摘要： A method of patterning a multi-layer mask is described. The method includes preparing a multi-layer mask on a substrate, wherein the multi-layer mask includes a lithographic layer and an intermediate mask layer underlying the lithographic layer, and wherein the intermediate mask layer comprises a carbon-containing compound. The method further includes: establishing an etch process recipe for transferring a pattern, that is formed in the lithographic layer and characterized by an initial pattern critical dimension (CD), to the intermediate mask layer; establishing at least one parametric relationship between an intermediate pattern CD to be formed in the intermediate mask layer and at least one process parameter, wherein the at least one parametric relationship provides process conditions capable of increasing and decreasing the initial pattern CD to the intermediate pattern CD; selecting a target process condition to achieve a target CD adjustment between the initial pattern CD and the intermediate pattern CD; and transferring the pattern from the lithographic layer to the intermediate mask layer using the target process condition.
摘要翻译：描述了图案化多层掩模的方法。该方法包括在衬底上制备多层掩模，其中所述多层掩模包括光刻层和位于所述光刻层下面的中间掩模层，并且其中所述中间掩模层包括含碳化合物。该方法还包括：建立用于传送在光刻层中形成并且由初始图案临界尺寸（CD）表征的图案的蚀刻工艺配方到中间掩模层; 建立要形成在中间掩模层中的中间图案CD与至少一个工艺参数之间的至少一个参数关系，其中所述至少一个参数关系提供能够增加和减小初始图案CD到中间图案CD的工艺条件 ; 选择目标处理条件以在初始图案CD和中间图案CD之间实现目标CD调整; 并使用目标工艺条件将图案从光刻层转移到中间掩模层。

8. 发明授权

US08313661B2 Deep trench liner removal process 有权
标题翻译：深沟槽衬板去除工艺
公开(公告)号：US08313661B2
公开(公告)日：2012-11-20
申请号：US12614496
申请日：2009-11-09
申请人： Vinh Luong , Akiteru Ko
发明人： Vinh Luong , Akiteru Ko
IPC分类号： H01B13/00
CPC分类号： H01L21/31144 , H01J37/32091 , H01J37/321 , H01J37/32165 , H01J37/32192 , H01J37/32449 , H01J37/3266 , H01L21/31122 , H01L21/67069 , H01L21/6719 , H01L21/67253 , H01L21/6831 , H01L29/66181
摘要： A liner removal process is described, wherein an excess portion of a conformal liner formed in a trench is substantially removed while reducing or minimizing damage to a bulk fill material in the trench.
摘要翻译：描述了衬垫移除工艺，其中形成在沟槽中的保形衬套的多余部分基本上被去除，同时减少或最小化对沟槽中的体填充材料的损坏。

9. 发明授权

US08268184B2 Etch process for reducing silicon recess 有权
标题翻译：用于减少硅凹槽的蚀刻工艺
公开(公告)号：US08268184B2
公开(公告)日：2012-09-18
申请号：US12826488
申请日：2010-06-29
申请人： Akiteru Ko , Christopher Cole
发明人： Akiteru Ko , Christopher Cole
IPC分类号： B44C1/22
CPC分类号： H01L21/31116 , H01J37/32091 , H01J37/321 , H01J37/3266 , H01J37/32724
摘要： A method for selectively etching a substrate is described. The method includes disposing a substrate comprising a silicon nitride (SiNy) layer overlying silicon in a plasma etching system, and transferring a pattern to the silicon nitride layer using a plasma etch process, wherein the plasma etch process utilizes a process composition having as incipient ingredients a process gas containing C, H and F, and an additive gas including CO2. The method further includes: selecting an amount of the additive gas in the plasma etch process to achieve: (1) a silicon recess formed in the silicon having a depth less than 10 nanometers (nm), and (2) a sidewall profile in the pattern having an angular deviation from 90 degrees less than 2 degrees.
摘要翻译：描述了一种用于选择性蚀刻衬底的方法。该方法包括在等离子体蚀刻系统中设置包括硅覆盖硅的氮化硅（SiNy）层的衬底，以及使用等离子体蚀刻工艺将图案转移到氮化硅层，其中等离子体蚀刻工艺利用具有初始成分的工艺组合物含有C，H和F的工艺气体和包括CO 2的添加气体。该方法还包括：在等离子体蚀刻工艺中选择一定量的添加气体以实现：（1）在硅中形成的具有深度小于10纳米（nm）的硅凹槽，和（2）在图案具有小于2度的90度的角度偏差。

10. 发明申请

US20070059938A1 Method and system for etching silicon oxide and silicon nitride with high selectivity relative to silicon 审中-公开
标题翻译：用于以高选择性相对于硅蚀刻氧化硅和氮化硅的方法和系统
公开(公告)号：US20070059938A1
公开(公告)日：2007-03-15
申请号：US11226452
申请日：2005-09-15
申请人： Hanako Kida , Masaaki Hagihara , Akiteru Ko
发明人： Hanako Kida , Masaaki Hagihara , Akiteru Ko
IPC分类号： H01L21/302
CPC分类号： H01L21/31116 , H01J37/32082 , H01J37/32935
摘要： A method and system for etching features in a substrate, whereby silicon oxide or silicon nitride or both are etched with high selectivity relative to silicon. In one embodiment, the process chemistry utilized to achieve high selectivity includes trifluoromethane (CHF3), difluoromethane (CH2F2), an oxygen containing gas, such as O2, and an optional inert gas, such as argon.
摘要翻译：用于蚀刻衬底中的特征的方法和系统，由此相对于硅以高选择性蚀刻氧化硅或氮化硅或两者。在一个实施方案中，用于实现高选择性的方法化学品包括三氟甲烷（CH 3）3，二氟甲烷（CH 2 SO 2 H 2），氧例如O 2，以及任选的惰性气体，例如氩气。

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