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    • 3. 发明授权
    • ECC-compare path of cache directory logic improvements
    • ECC比较缓存目录逻辑改进路径
    • US5822338A
    • 1998-10-13
    • US14503
    • 1998-01-28
    • Tin-Chee Lo
    • Tin-Chee Lo
    • G06F11/10G06F11/00
    • G06F11/1064
    • Directory compare and ECC logic which is interfaced with the array's static and dynamic outputs for the ECC-compare path of a cache directory, using a three-output array providing a static output and a pair of complementary dynamic outputs. The static output is useed by the compare logic for a directory compare. The pair of complementary dynamic outputs provide dynamic signals (t and f) to drive the ECC logic only as ECC logic complementary signals which are coupled to drive a DCVS (Dynamic Cascode Voltage Switch) syndrome generator circuit. The static output signal performs compare-then-correct processing. The dynamic signals of each bit emanating from array are ECC checked but the static signal is not. The static signal is consistent with the t dynamic signal.
    • 目录比较和ECC逻辑,其与阵列的静态和动态输出接口,用于缓存目录的ECC比较路径,使用提供静态输出的三输出阵列和一对互补的动态输出。 静态输出由目录比较的比较逻辑使用。 这对互补动态输出提供动态信号(t和f),以驱动ECC逻辑,仅作为耦合到驱动DCVS(动态串联电压开关)校正子发生器电路的ECC逻辑互补信号。 静态输出信号执行比较然后正确的处理。 从阵列发出的每个位的动态信号被检查,但是静态信号不是。 静态信号与t动态信号一致。
    • 4. 发明授权
    • Chip organization for an extendable memory structure providing busless
internal page transfers
    • 可扩展内存结构的芯片组织提供无内部页面传输
    • US5138705A
    • 1992-08-11
    • US371957
    • 1989-06-26
    • Tin-Chee LoArnold Weinberger
    • Tin-Chee LoArnold Weinberger
    • G06F12/06G06F12/02G06F12/08G11C8/12
    • G11C8/12G06F12/08
    • A memory structure is described as comprised of a large number of fixed-size page frames. Each page frame in the memory is spread among all chips in the memory. The size of the memory structure may be extended or expanded by adding the same type of high-capacity chip originally used to construct the memory. (The chips may be constructed of semiconductor DRAM technology.) When the memory is extended/expanded, the fixed-size page frames have their lateral dimension decreased and their length increased, in accordance with the increase in the number of chips in the memory. A shift register on each chip accommodates the moving of pages within the memory structure as the page-frame shape and the redistribution of the page frame locations in the memory are changed when the number of chips in the memory structure is changed, without requiring any change in the internal structure of the chips. A page of data can be moved in two dimensions between any page frames within the memory structure without using any external bus, even though the size of the memory structure is changed. No bit in a page is moved off of its chip during a page move operation. All bits in a page are accessed and moved logically in parallel. Extremely fast page transfer rates are obtainable by the busless page move operations. Special addressing is provided that accommodates both the internal page move operations and data unit accesses in the memory structure for an external memory bus. Multiple logical memories can be accommodated in the memory structure.
    • 5. 发明授权
    • On-Chip AC self-test controller
    • 片上AC自检控制器
    • US07596734B2
    • 2009-09-29
    • US12185172
    • 2008-08-04
    • John D. FlanaganJay R. HerringTin-Chee Lo
    • John D. FlanaganJay R. HerringTin-Chee Lo
    • G01R31/28
    • G01R31/31724G01R31/2891G01R31/31922
    • A system for performing AC self-test on an integrated circuit that includes a system clock for normal operation is provided. The system includes the system clock, self-test circuitry, a first and second test register to capture and launch test data in response to a sequence of data pulses, and a logic circuit to be tested. The self-test circuitry includes an AC self-test controller and a clock splitter. The clock splitter generates the sequence of data pulses including a long data capture pulse followed by an at speed data launch pulse and an at speed data capture pulse followed by a long data launch pulse. The at speed data launch pulse and the at speed data capture pulse are generated for a common cycle of the system clock.
    • 提供了一种用于在包括用于正常操作的系统时钟的集成电路上执行AC自检的系统。 该系统包括系统时钟,自检电路,第一和第二测试寄存器,用于响应于数据脉冲序列捕获和发射测试数据,以及待测试的逻辑电路。 自检电路包括一个交流自检控制器和时钟分离器。 时钟分配器产生数据脉冲序列,包括长数据捕获脉冲,随后是速度数据发射脉冲和速度数据捕获脉冲,随后是长数据发射脉冲。 为系统时钟的公共周期产生速度数据发射脉冲和速度数据捕获脉冲。
    • 8. 发明授权
    • Method for shortening memory fetch time relative to memory store time
and controlling recovery in a DRAM
    • 相对于存储器存储时间缩短存储器获取时间并控制DRAM中的恢复的方法
    • US5359722A
    • 1994-10-25
    • US555960
    • 1990-07-23
    • Shiu K. ChanJoseph H. Datres, Jr.Tin-Chee Lo
    • Shiu K. ChanJoseph H. Datres, Jr.Tin-Chee Lo
    • G06F12/06G06F12/08G11C7/22G11C11/401G11C11/4076G11C29/00G11C29/42G06F12/00G06F1/04
    • G11C7/22G11C11/4076
    • A method for reducing fetch time in a computer system provides a memory fetch cycle that is shorter than the memory store cycle. Each chip of the computer system has at least one dynamic random access memory array (DRAM) and a small high speed cache static random access memory (SRAM) on the chip. The system memory controller recognizes the fetch or store state of a memory request in generating a DRAM subrow-address timing signal (RAS) and a cache address timing signal (CAS) for enabling the accessing and addressing of bits in the SRAM and recovery in the DRAM. The RAS starts DRAM recovery for a fetch cycle at or near the start of fetching of data from the SRAMs on the chips, but controls RAS to not start DRAM recovery for a store cycle until SRAM data storing is done. The clocks on the chips contain circuits that control DRAM recovery while fetching during DRAM data from the SRAMs, but that prevent DRAM recovery from starting until data storing in the SRAMs is complete.
    • 用于减少计算机系统中的获取时间的方法提供比存储器存储周期短的存储器获取周期。 计算机系统的每个芯片在芯片上具有至少一个动态随机存取存储器阵列(DRAM)和小型高速缓存静态随机存取存储器(SRAM)。 系统存储器控制器在生成DRAM子地址定时信号(RAS)和高速缓存地址定时信号(CAS)时识别存储器请求的获取或存储状态,用于实现SRAM中的位的访问和寻址以及在SRAM中的恢复 DRAM。 在从芯片上的SRAM提取数据开始或接近开始的时候,RAS启动DRAM恢复,但是控制RAS在存储周期之前不开始DRAM恢复,直到完成SRAM数据存储。 芯片上的时钟包含控制DRAM恢复的电路,在DRAM的DRAM数据期间提取DRAM,但是防止DRAM恢复开始直到SRAM中的数据存储完成。