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1. 发明申请

US20120012048A1 FABRICATION OF SUBSTRATES WITH A USEFUL LAYER OF MONOCRYSTALLINE SEMICONDUCTOR MATERIAL 有权
公开(公告)号：US20120012048A1
公开(公告)日：2012-01-19
申请号：US13246316
申请日：2011-09-27
申请人： Fabrice Letertre , Bruno Ghyselen , Olivier Rayssac , Pierre Rayssac , Gisèle Rayssac
发明人： Fabrice Letertre , Bruno Ghyselen , Olivier Rayssac , Pierre Rayssac , Gisèle Rayssac
IPC分类号： C30B25/02 , C30B25/18
CPC分类号： H01L21/187 , H01L21/76254
摘要： The invention relates to methods for fabricating a semiconductor substrate. In one embodiment, the method includes providing an support that includes a barrier layer thereon for preventing loss by diffusion of elements derived from dissociation of the support at epitaxial growth temperatures; providing a seed layer on the barrier layer, wherein the seed layer facilitates epitaxial growth of a single crystal III-nitride semiconductor layer thereon; epitaxially growing a nitride working layer on the thin seed layer; and removing the support to form the substrate.

2. 发明申请

US20110171812A1 FABRICATION OF SUBSTRATES WITH A USEFUL LAYER OF MONOCRYSTALLINE SEMICONDUCTOR MATERIAL 有权
标题翻译：具有有用的单晶半导体材料层的基板的制造
公开(公告)号：US20110171812A1
公开(公告)日：2011-07-14
申请号：US12984895
申请日：2011-01-05
申请人： Fabrice Letertre , Bruno Ghyselen , Olivier Rayssac , Pierre Rayssac , Gisèle Rayssac
发明人： Fabrice Letertre , Bruno Ghyselen , Olivier Rayssac , Pierre Rayssac , Gisèle Rayssac
IPC分类号： H01L21/30
CPC分类号： H01L21/187 , H01L21/76254
摘要： The invention relates to methods for fabricating a semiconductor substrate. In one embodiment, the method includes transferring a seed layer on to a support substrate; and depositing a working layer on the seed layer to form a composite substrate. The seed layer is made of a material that accommodates thermal expansion of the support substrate and of the working layer. In another embodiment, the method includes providing a source substrate with a weakened zone defining a nucleation layer, bonding a support substrate to the source substrate, detaching the nucleation layer and support substrate at the weakened zone by applying laser irradiation stress, depositing a semiconductor material upon the nucleation layer, bonding a target substrate to the deposited layer and removing the support substrate and nucleation layer. The result is a semiconductor substrate that includes the layer of semiconductor material on a support or target substrate.
摘要翻译：本发明涉及制造半导体衬底的方法。在一个实施例中，该方法包括将种子层转移到支撑衬底上; 以及在种子层上沉积工作层以形成复合衬底。种子层由容纳支撑基板和工作层的热膨胀的材料制成。在另一个实施例中，该方法包括：提供源极基底，其具有限定成核层的弱化区域，将支撑基底结合到源极基底，通过施加激光照射应力在弱化区域分离成核层和支撑基底，沉积半导体材料在成核层上，将目标衬底粘合到沉积层上并去除支撑衬底和成核层。结果是在支撑体或靶基板上包括半导体材料层的半导体衬底。

3. 发明授权

US10002763B2 Fabrication of substrates with a useful layer of monocrystalline semiconductor material 有权
公开(公告)号：US10002763B2
公开(公告)日：2018-06-19
申请号：US13291468
申请日：2011-11-08
申请人： Fabrice Letertre , Bruno Ghyselen , Olivier Rayssac , Pierre Rayssac , Gisèle Rayssac
发明人： Fabrice Letertre , Bruno Ghyselen , Olivier Rayssac
IPC分类号： H01L21/00 , H01L21/18 , H01L21/762
CPC分类号： H01L21/187 , H01L21/76254
摘要： The invention relates to methods for fabricating a semiconductor substrate. In one embodiment, the method includes providing a support that includes a barrier layer thereon for preventing loss by diffusion of elements derived from dissociation of the support at epitaxial growth temperatures; providing a seed layer on the barrier layer, wherein the seed layer facilitates epitaxial growth of a single crystal III-nitride semiconductor layer thereon; epitaxially growing a nitride working layer on the thin seed layer; and removing the support to form the semiconductor substrate.

4. 发明授权

US08252664B2 Fabrication of substrates with a useful layer of monocrystalline semiconductor material 有权
标题翻译：用有用的单晶半导体材料层制造衬底
公开(公告)号：US08252664B2
公开(公告)日：2012-08-28
申请号：US13246316
申请日：2011-09-27
申请人： Fabrice Letertre , Bruno Ghyselen , Olivier Rayssac , Pierre Rayssac, legal representative , Gisèle Rayssac, legal representative
发明人： Fabrice Letertre , Bruno Ghyselen , Olivier Rayssac
IPC分类号： H01L21/46
CPC分类号： H01L21/187 , H01L21/76254
摘要： The invention relates to methods for fabricating a semiconductor substrate. In one embodiment, the method includes providing an support that includes a barrier layer thereon for preventing loss by diffusion of elements derived from dissociation of the support at epitaxial growth temperatures; providing a seed layer on the barrier layer, wherein the seed layer facilitates epitaxial growth of a single crystal III-nitride semiconductor layer thereon; epitaxially growing a nitride working layer on the thin seed layer; and removing the support to form the substrate.
摘要翻译：本发明涉及制造半导体衬底的方法。在一个实施方案中，该方法包括提供在其上包括阻挡层的载体，用于防止在外延生长温度下衍生自载体解离的元素的扩散而损失; 在所述阻挡层上提供种子层，其中所述种子层有助于其上的单晶III族氮化物半导体层的外延生长; 在薄种子层上外延生长氮化物工作层; 并移除支撑物以形成基底。

5. 发明授权

US07939428B2 Methods for making substrates and substrates formed therefrom 有权
标题翻译：制造基材和由其形成的基材的方法
公开(公告)号：US07939428B2
公开(公告)日：2011-05-10
申请号：US12914194
申请日：2010-10-28
申请人： Alice Boussagol , Bruce Faure , Bruno Ghyselen , Fabrice Letertre , Olivier Rayssac , Pierre Rayssac, legal representative , Gisèle Rayssac, legal representative
发明人： Alice Boussagol , Bruce Faure , Bruno Ghyselen , Fabrice Letertre , Olivier Rayssac
IPC分类号： H01L21/46 , H01L21/30 , H01L21/762
CPC分类号： H01L21/76254 , C30B25/18 , C30B33/00 , H01L21/2007
摘要： A method for making substrates for use in optics, electronics, or opto-electronics. The method may include transferring a seed layer onto a receiving substrate and depositing a useful layer onto the seed layer. The thermal expansion coefficient of the receiving support may be identical to or slightly larger than the thermal expansion coefficient of the useful layer and the thermal expansion coefficient of the seed layer may be substantially equal to the thermal expansion coefficient of the receiving support. Preferably, the nucleation layer and the intermediate support have substantially the same chemical composition.
摘要翻译：一种用于制造用于光学，电子或光电子的基板的方法。该方法可以包括将种子层转移到接收衬底上并将有用层沉积到种子层上。接收支撑件的热膨胀系数可以与有用层的热膨胀系数相同或略大，并且种子层的热膨胀系数可以基本上等于接收支撑件的热膨胀系数。优选地，成核层和中间载体具有基本上相同的化学组成。

6. 发明申请

US20110039368A1 METHODS FOR MAKING SUBSTRATES AND SUBSTRATES FORMED THEREFROM 有权
标题翻译：用于制造基板的方法和形成的基板
公开(公告)号：US20110039368A1
公开(公告)日：2011-02-17
申请号：US12914194
申请日：2010-10-28
申请人： Alice Boussagol , Bruce Faure , Bruno Ghyselen , Fabrice Letertre , Olivier Rayssac , Pierre Rayssac , Gisèle Rayssac
发明人： Alice Boussagol , Bruce Faure , Bruno Ghyselen , Fabrice Letertre , Olivier Rayssac , Pierre Rayssac , Gisèle Rayssac
IPC分类号： H01L31/18 , H01L21/30
CPC分类号： H01L21/76254 , C30B25/18 , C30B33/00 , H01L21/2007
摘要： A method for making substrates for use in optics, electronics, or opto-electronics. The method may include transferring a seed layer onto a receiving substrate and depositing a useful layer onto the seed layer. The thermal expansion coefficient of the receiving support may be identical to or slightly larger than the thermal expansion coefficient of the useful layer and the thermal expansion coefficient of the seed layer may be substantially equal to the thermal expansion coefficient of the receiving support. Preferably, the nucleation layer and the intermediate support have substantially the same chemical composition.
摘要翻译：一种用于制造用于光学，电子或光电子的基板的方法。该方法可以包括将种子层转移到接收衬底上并将有用层沉积到种子层上。接收支撑件的热膨胀系数可以与有用层的热膨胀系数相同或略大，并且种子层的热膨胀系数可以基本上等于接收支撑件的热膨胀系数。优选地，成核层和中间载体具有基本上相同的化学组成。

7. 发明授权

US07615468B2 Methods for making substrates and substrates formed therefrom 有权
标题翻译：制造基材和由其形成的基材的方法
公开(公告)号：US07615468B2
公开(公告)日：2009-11-10
申请号：US11840696
申请日：2007-08-17
申请人： Alice Boussagol , Bruce Faure , Bruno Ghyselen , Fabrice Letertre , Olivier Rayssac , Pierre Rayssac, legal representative , Gisèle Rayssac, legal representative
发明人： Alice Boussagol , Bruce Faure , Bruno Ghyselen , Fabrice Letertre , Olivier Rayssac
IPC分类号： H01L21/46 , H01L21/30 , H01L21/762
CPC分类号： H01L21/76254 , C30B25/18 , C30B33/00 , H01L21/2007
摘要： A method for making substrates for use in optics, electronics, or opto-electronics. The method may include transferring a seed layer onto a receiving support and depositing a useful layer onto the seed layer. The thermal expansion coefficient of the receiving support may be identical to or slightly larger than the thermal expansion coefficient of the useful layer and the thermal expansion coefficient of the seed layer may be substantially equal to the thermal expansion coefficient of the receiving support. Preferably, the nucleation layer and the intermediate support have substantially the same chemical composition.
摘要翻译：一种用于制造用于光学，电子或光电子的基板的方法。该方法可以包括将种子层转移到接收支撑体上并将有用的层沉积到种子层上。接收支撑件的热膨胀系数可以与有用层的热膨胀系数相同或略大，并且种子层的热膨胀系数可以基本上等于接收支撑件的热膨胀系数。优选地，成核层和中间载体具有基本上相同的化学组成。

8. 发明授权

US08507361B2 Fabrication of substrates with a useful layer of monocrystalline semiconductor material 有权
标题翻译：用有用的单晶半导体材料层制造衬底
公开(公告)号：US08507361B2
公开(公告)日：2013-08-13
申请号：US12984895
申请日：2011-01-05
申请人： Fabrice Letertre , Bruno Ghyselen , Pierre Rayssac , Gisèle Rayssac
发明人： Fabrice Letertre , Bruno Ghyselen , Olivier Rayssac
IPC分类号： H01L21/30
CPC分类号： H01L21/187 , H01L21/76254
摘要： The invention relates to methods for fabricating a semiconductor substrate. In one embodiment, the method includes transferring a seed layer on to a support substrate; and depositing a working layer on the seed layer to form a composite substrate. The seed layer is made of a material that accommodates thermal expansion of the support substrate and of the working layer. In another embodiment, the method includes providing a source substrate with a weakened zone defining a nucleation layer, bonding a support substrate to the source substrate, detaching the nucleation layer and support substrate at the weakened zone by applying laser irradiation stress, depositing a semiconductor material upon the nucleation layer, bonding a target substrate to the deposited layer and removing the support substrate and nucleation layer. The result is a semiconductor substrate that includes the layer of semiconductor material on a support or target substrate.
摘要翻译：本发明涉及制造半导体衬底的方法。在一个实施例中，该方法包括将种子层转移到支撑衬底上; 以及在种子层上沉积工作层以形成复合衬底。种子层由容纳支撑基板和工作层的热膨胀的材料制成。在另一个实施例中，该方法包括：提供源极基底，其具有限定成核层的弱化区域，将支撑基底结合到源极基底，通过施加激光照射应力在弱化区域分离成核层和支撑基底，沉积半导体材料在成核层上，将目标衬底粘合到沉积层上并去除支撑衬底和成核层。结果是在支撑体或靶基板上包括半导体材料层的半导体衬底。

9. 发明授权

US07839001B2 Methods for making substrates and substrates formed therefrom 有权
标题翻译：制造基材和由其形成的基材的方法
公开(公告)号：US07839001B2
公开(公告)日：2010-11-23
申请号：US12536082
申请日：2009-08-05
申请人： Alice Boussagol , Bruce Faure , Bruno Ghyselen , Fabrice Letertre , Olivier Rayssac , Pierre Rayssac, legal representative , Giséle Rayssac, legal representative
发明人： Alice Boussagol , Bruce Faure , Bruno Ghyselen , Fabrice Letertre , Olivier Rayssac
IPC分类号： H01L23/52 , H01L23/48 , H01L21/762 , H01L21/46 , H01L21/30
CPC分类号： H01L21/76254 , C30B25/18 , C30B33/00 , H01L21/2007
摘要： A method for making substrates for use in optics, electronics, or opto-electronics. The method may include transferring a seed layer onto a receiving support and depositing a useful layer onto the seed layer. The thermal expansion coefficient of the receiving support may be identical to or slightly larger than the thermal expansion coefficient of the useful layer and the thermal expansion coefficient of the seed layer may be substantially equal to the thermal expansion coefficient of the receiving support. Preferably, the nucleation layer and the intermediate support have substantially the same chemical composition.
摘要翻译：一种用于制造用于光学，电子或光电子的基板的方法。该方法可以包括将种子层转移到接收支撑体上并将有用的层沉积到种子层上。接收支撑件的热膨胀系数可以与有用层的热膨胀系数相同或略大，并且种子层的热膨胀系数可以基本上等于接收支撑件的热膨胀系数。优选地，成核层和中间载体具有基本上相同的化学组成。

10. 发明申请

US20120058621A1 FABRICATION OF SUBSTRATES WITH A USEFUL LAYER OF MONOCRYSTALLINE SEMICONDUCTOR MATERIAL 有权
标题翻译：具有有用的单晶半导体材料层的基板的制造
公开(公告)号：US20120058621A1
公开(公告)日：2012-03-08
申请号：US13291468
申请日：2011-11-08
申请人： Fabrice Letertre , Bruno Ghyselen , Olivier Rayssac , Pierre Rayssac , Gisele Rayssac
发明人： Fabrice Letertre , Bruno Ghyselen , Olivier Rayssac , Pierre Rayssac , Gisele Rayssac
IPC分类号： H01L21/762
CPC分类号： H01L21/187 , H01L21/76254
摘要： The invention relates to methods for fabricating a semiconductor substrate. In one embodiment, the method includes providing an support that includes a barrier layer thereon for preventing loss by diffusion of elements derived from dissociation of the support at epitaxial growth temperatures; providing a seed layer on the barrier layer, wherein the seed layer facilitates epitaxial growth of a single crystal III-nitride semiconductor layer thereon; epitaxially growing a nitride working layer on the thin seed layer; and removing the support to form the substrate.
摘要翻译：本发明涉及制造半导体衬底的方法。在一个实施方案中，该方法包括提供在其上包括阻挡层的载体，用于防止在外延生长温度下衍生自载体解离的元素的扩散而损失; 在所述阻挡层上提供种子层，其中所述种子层有助于其上的单晶III族氮化物半导体层的外延生长; 在薄种子层上外延生长氮化物工作层; 并移除支撑物以形成基底。

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