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1. 发明授权

US08252664B2 Fabrication of substrates with a useful layer of monocrystalline semiconductor material 有权
标题翻译：用有用的单晶半导体材料层制造衬底
公开(公告)号：US08252664B2
公开(公告)日：2012-08-28
申请号：US13246316
申请日：2011-09-27
申请人： Fabrice Letertre , Bruno Ghyselen , Olivier Rayssac , Pierre Rayssac, legal representative , Gisèle Rayssac, legal representative
发明人： Fabrice Letertre , Bruno Ghyselen , Olivier Rayssac
IPC分类号： H01L21/46
CPC分类号： H01L21/187 , H01L21/76254
摘要： The invention relates to methods for fabricating a semiconductor substrate. In one embodiment, the method includes providing an support that includes a barrier layer thereon for preventing loss by diffusion of elements derived from dissociation of the support at epitaxial growth temperatures; providing a seed layer on the barrier layer, wherein the seed layer facilitates epitaxial growth of a single crystal III-nitride semiconductor layer thereon; epitaxially growing a nitride working layer on the thin seed layer; and removing the support to form the substrate.
摘要翻译：本发明涉及制造半导体衬底的方法。在一个实施方案中，该方法包括提供在其上包括阻挡层的载体，用于防止在外延生长温度下衍生自载体解离的元素的扩散而损失; 在所述阻挡层上提供种子层，其中所述种子层有助于其上的单晶III族氮化物半导体层的外延生长; 在薄种子层上外延生长氮化物工作层; 并移除支撑物以形成基底。

2. 发明授权

US07939428B2 Methods for making substrates and substrates formed therefrom 有权
标题翻译：制造基材和由其形成的基材的方法
公开(公告)号：US07939428B2
公开(公告)日：2011-05-10
申请号：US12914194
申请日：2010-10-28
申请人： Alice Boussagol , Bruce Faure , Bruno Ghyselen , Fabrice Letertre , Olivier Rayssac , Pierre Rayssac, legal representative , Gisèle Rayssac, legal representative
发明人： Alice Boussagol , Bruce Faure , Bruno Ghyselen , Fabrice Letertre , Olivier Rayssac
IPC分类号： H01L21/46 , H01L21/30 , H01L21/762
CPC分类号： H01L21/76254 , C30B25/18 , C30B33/00 , H01L21/2007
摘要： A method for making substrates for use in optics, electronics, or opto-electronics. The method may include transferring a seed layer onto a receiving substrate and depositing a useful layer onto the seed layer. The thermal expansion coefficient of the receiving support may be identical to or slightly larger than the thermal expansion coefficient of the useful layer and the thermal expansion coefficient of the seed layer may be substantially equal to the thermal expansion coefficient of the receiving support. Preferably, the nucleation layer and the intermediate support have substantially the same chemical composition.
摘要翻译：一种用于制造用于光学，电子或光电子的基板的方法。该方法可以包括将种子层转移到接收衬底上并将有用层沉积到种子层上。接收支撑件的热膨胀系数可以与有用层的热膨胀系数相同或略大，并且种子层的热膨胀系数可以基本上等于接收支撑件的热膨胀系数。优选地，成核层和中间载体具有基本上相同的化学组成。

3. 发明授权

US07615468B2 Methods for making substrates and substrates formed therefrom 有权
标题翻译：制造基材和由其形成的基材的方法
公开(公告)号：US07615468B2
公开(公告)日：2009-11-10
申请号：US11840696
申请日：2007-08-17
申请人： Alice Boussagol , Bruce Faure , Bruno Ghyselen , Fabrice Letertre , Olivier Rayssac , Pierre Rayssac, legal representative , Gisèle Rayssac, legal representative
发明人： Alice Boussagol , Bruce Faure , Bruno Ghyselen , Fabrice Letertre , Olivier Rayssac
IPC分类号： H01L21/46 , H01L21/30 , H01L21/762
CPC分类号： H01L21/76254 , C30B25/18 , C30B33/00 , H01L21/2007
摘要： A method for making substrates for use in optics, electronics, or opto-electronics. The method may include transferring a seed layer onto a receiving support and depositing a useful layer onto the seed layer. The thermal expansion coefficient of the receiving support may be identical to or slightly larger than the thermal expansion coefficient of the useful layer and the thermal expansion coefficient of the seed layer may be substantially equal to the thermal expansion coefficient of the receiving support. Preferably, the nucleation layer and the intermediate support have substantially the same chemical composition.
摘要翻译：一种用于制造用于光学，电子或光电子的基板的方法。该方法可以包括将种子层转移到接收支撑体上并将有用的层沉积到种子层上。接收支撑件的热膨胀系数可以与有用层的热膨胀系数相同或略大，并且种子层的热膨胀系数可以基本上等于接收支撑件的热膨胀系数。优选地，成核层和中间载体具有基本上相同的化学组成。

4. 发明授权

US07839001B2 Methods for making substrates and substrates formed therefrom 有权
标题翻译：制造基材和由其形成的基材的方法
公开(公告)号：US07839001B2
公开(公告)日：2010-11-23
申请号：US12536082
申请日：2009-08-05
申请人： Alice Boussagol , Bruce Faure , Bruno Ghyselen , Fabrice Letertre , Olivier Rayssac , Pierre Rayssac, legal representative , Giséle Rayssac, legal representative
发明人： Alice Boussagol , Bruce Faure , Bruno Ghyselen , Fabrice Letertre , Olivier Rayssac
IPC分类号： H01L23/52 , H01L23/48 , H01L21/762 , H01L21/46 , H01L21/30
CPC分类号： H01L21/76254 , C30B25/18 , C30B33/00 , H01L21/2007
摘要： A method for making substrates for use in optics, electronics, or opto-electronics. The method may include transferring a seed layer onto a receiving support and depositing a useful layer onto the seed layer. The thermal expansion coefficient of the receiving support may be identical to or slightly larger than the thermal expansion coefficient of the useful layer and the thermal expansion coefficient of the seed layer may be substantially equal to the thermal expansion coefficient of the receiving support. Preferably, the nucleation layer and the intermediate support have substantially the same chemical composition.
摘要翻译：一种用于制造用于光学，电子或光电子的基板的方法。该方法可以包括将种子层转移到接收支撑体上并将有用的层沉积到种子层上。接收支撑件的热膨胀系数可以与有用层的热膨胀系数相同或略大，并且种子层的热膨胀系数可以基本上等于接收支撑件的热膨胀系数。优选地，成核层和中间载体具有基本上相同的化学组成。

5. 发明授权

US07405135B2 Substrate for stressed systems and method of making same 失效
标题翻译：强化系统基板及其制作方法
公开(公告)号：US07405135B2
公开(公告)日：2008-07-29
申请号：US11434930
申请日：2006-05-17
申请人： Fabrice Letertre , Bruno Ghyselen , Olivier Rayssac
发明人： Fabrice Letertre , Bruno Ghyselen , Olivier Rayssac
IPC分类号： H01L29/00
CPC分类号： H01L21/187 , B81C1/00365 , B81C2201/0191 , C30B25/183 , H01L21/0237 , H01L21/0243 , H01L21/02439 , H01L21/0245 , H01L21/02513 , H01L21/02658 , H01L21/02664 , H01L21/76254
摘要： A stress absorbing microstructure assembly including a support substrate having an accommodation layer that has plurality of motifs engraved or etched in a surface, a buffer layer and a nucleation layer. The stress absorbing microstructure assembly may also include an insulating layer between the buffer layer and the nucleation layer. This assembly can receive thick epitaxial layers thereon with concern of causing cracking of such layers.
摘要翻译：一种应力吸收微结构组件，包括具有在表面上雕刻或蚀刻的多个图案的容纳层的支撑衬底，缓冲层和成核层。应力吸收微结构组件还可以包括缓冲层和成核层之间的绝缘层。该组件可以在其上接收厚的外延层，同时引起这种层的破裂。

6. 发明申请

US20070287273A1 METHODS FOR MAKING SUBSTRATES AND SUBSTRATES FORMED THEREFROM 有权
标题翻译：用于制造基板的方法和形成的基板
公开(公告)号：US20070287273A1
公开(公告)日：2007-12-13
申请号：US11840696
申请日：2007-08-17
申请人： Alice Boussagol , Bruce Faure , Bruno Ghyselen , Fabrice Letertre , Olivier Rayssac , Pierre Rayssac , Gisele Rayssac
发明人： Alice Boussagol , Bruce Faure , Bruno Ghyselen , Fabrice Letertre , Olivier Rayssac , Pierre Rayssac , Gisele Rayssac
IPC分类号： H01L21/20
CPC分类号： H01L21/76254 , C30B25/18 , C30B33/00 , H01L21/2007
摘要： A method for making substrates for use in optics, electronics, or opto-electronics. The method may include transferring a seed layer onto a receiving support and depositing a useful layer onto the seed layer. The thermal expansion coefficient of the receiving support may be identical to or slightly larger than the thermal expansion coefficient of the useful layer and the thermal expansion coefficient of the seed layer may be substantially equal to the thermal expansion coefficient of the receiving support. Preferably, the nucleation layer and the intermediate support have substantially the same chemical composition.
摘要翻译：一种用于制造用于光学，电子或光电子的基板的方法。该方法可以包括将种子层转移到接收支撑体上并将有用的层沉积到种子层上。接收支撑件的热膨胀系数可以与有用层的热膨胀系数相同或略大，并且种子层的热膨胀系数可以基本上等于接收支撑件的热膨胀系数。优选地，成核层和中间载体具有基本上相同的化学组成。

7. 发明授权

US07279779B2 Substrate assembly for stressed systems 有权
标题翻译：用于应力系统的基板组件
公开(公告)号：US07279779B2
公开(公告)日：2007-10-09
申请号：US11411833
申请日：2006-04-27
申请人： Fabrice Letertre , Bruno Ghyselen , Olivier Rayssac
发明人： Fabrice Letertre , Bruno Ghyselen , Olivier Rayssac
IPC分类号： H01L23/13
CPC分类号： H01L21/2007 , H01L21/76251 , H01L21/76254
摘要： A substrate-assembly having a mechanical stress absorption system. The assembly includes two substrates, one of which has a mechanical stress absorbing system, such as a plurality of motifs that absorb thermoelastic stresses, to prevent cracking or destruction of the substrates or separation of one substrate from the other.
摘要翻译：具有机械应力吸收系统的基板组件。该组件包括两个基板，其中一个具有机械应力吸收系统，例如吸收热弹性应力的多个图案，以防止基板的破裂或破坏或将一个基板与另一个基板分开。

8. 发明授权

US07256101B2 Methods for preparing a semiconductor assembly 有权
标题翻译：半导体组件的制备方法
公开(公告)号：US07256101B2
公开(公告)日：2007-08-14
申请号：US10893596
申请日：2004-07-15
申请人： Fabrice Letertre , Bruno Ghyselen , Olivier Rayssac
发明人： Fabrice Letertre , Bruno Ghyselen , Olivier Rayssac
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L21/76254 , H01L21/0445 , H01L21/187 , H01L21/7602 , H01L33/0012 , H01L33/0029
摘要： Methods for preparing a semiconductor assembly are disclosed. In an implementation, the technique includes providing a support substrate and a bonding surface thereon, providing a donor substrate having a weakened zone that defines a useful layer and a bonding surface on the useful layer, and providing an interface layer of a predetermined material on the bonding surface of either the support substrate or the useful layer to provide a bonding surface thereon. The method also includes molecularly bonding the bonding surface of the interface layer to the bonding surface of the other of the support substrate or the useful layer to form a separable bonding interface therebetween, and to thus form the semiconductor assembly, and heat treating the semiconductor assembly to a temperature of at least 1000 to 1100° C. without substantially increasing molecular bonding between the bonding surface of the interface layer and the bonding surface of the other of the support substrate or the useful layer, so that the separable bonding interface maintains a sufficiently weak bond that can later be overcome by applying stresses to detach the useful layer from the donor substrate.
摘要翻译：公开了制备半导体组件的方法。在一个实施方案中，该技术包括在其上提供支撑衬底和结合表面，提供施主衬底，其具有限定可用层的弱化区和在有用层上的结合表面，以及在有用层上提供预定材料的界面层粘合表面，以在其上提供粘合表面。该方法还包括将界面层的结合表面分别结合到支撑衬底或有用层中的另一个的接合表面，以在其之间形成可分离的接合界面，从而形成半导体组件，并对半导体组件进行热处理达到至少1000〜1100℃的温度，而不会在界面层的接合面与支撑基板或有用层的另一方的接合面之间基本上增加分子接合，使得可分离的接合界面保持足够的弱键可以随后通过施加应力来克服有用层与施主衬底的分离。

9. 发明申请

US20060216849A1 Substrate for stressed systems and method of making same 失效
公开(公告)号：US20060216849A1
公开(公告)日：2006-09-28
申请号：US11434930
申请日：2006-05-17
申请人： Fabrice Letertre , Bruno Ghyselen , Olivier Rayssac
发明人： Fabrice Letertre , Bruno Ghyselen , Olivier Rayssac
IPC分类号： H01L21/00 , H01L21/20 , H01L21/30
CPC分类号： H01L21/187 , B81C1/00365 , B81C2201/0191 , C30B25/183 , H01L21/0237 , H01L21/0243 , H01L21/02439 , H01L21/0245 , H01L21/02513 , H01L21/02658 , H01L21/02664 , H01L21/76254
摘要： A stress absorbing microstructure assembly including a support substrate having an accommodation layer that has plurality of motifs engraved or etched in a surface, a buffer layer and a nucleation layer. The stress absorbing microstructure assembly may also include an insulating layer between the buffer layer and the nucleation layer. This assembly can receive thick epitaxial layers thereon with concern of causing cracking of such layers.

10. 发明授权

US10002763B2 Fabrication of substrates with a useful layer of monocrystalline semiconductor material 有权
公开(公告)号：US10002763B2
公开(公告)日：2018-06-19
申请号：US13291468
申请日：2011-11-08
申请人： Fabrice Letertre , Bruno Ghyselen , Olivier Rayssac , Pierre Rayssac , Gisèle Rayssac
发明人： Fabrice Letertre , Bruno Ghyselen , Olivier Rayssac
IPC分类号： H01L21/00 , H01L21/18 , H01L21/762
CPC分类号： H01L21/187 , H01L21/76254
摘要： The invention relates to methods for fabricating a semiconductor substrate. In one embodiment, the method includes providing a support that includes a barrier layer thereon for preventing loss by diffusion of elements derived from dissociation of the support at epitaxial growth temperatures; providing a seed layer on the barrier layer, wherein the seed layer facilitates epitaxial growth of a single crystal III-nitride semiconductor layer thereon; epitaxially growing a nitride working layer on the thin seed layer; and removing the support to form the semiconductor substrate.

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