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1. 发明申请

US20120012048A1 FABRICATION OF SUBSTRATES WITH A USEFUL LAYER OF MONOCRYSTALLINE SEMICONDUCTOR MATERIAL 有权
公开(公告)号：US20120012048A1
公开(公告)日：2012-01-19
申请号：US13246316
申请日：2011-09-27
申请人： Fabrice Letertre , Bruno Ghyselen , Olivier Rayssac , Pierre Rayssac , Gisèle Rayssac
发明人： Fabrice Letertre , Bruno Ghyselen , Olivier Rayssac , Pierre Rayssac , Gisèle Rayssac
IPC分类号： C30B25/02 , C30B25/18
CPC分类号： H01L21/187 , H01L21/76254
摘要： The invention relates to methods for fabricating a semiconductor substrate. In one embodiment, the method includes providing an support that includes a barrier layer thereon for preventing loss by diffusion of elements derived from dissociation of the support at epitaxial growth temperatures; providing a seed layer on the barrier layer, wherein the seed layer facilitates epitaxial growth of a single crystal III-nitride semiconductor layer thereon; epitaxially growing a nitride working layer on the thin seed layer; and removing the support to form the substrate.

2. 发明申请

US20110171812A1 FABRICATION OF SUBSTRATES WITH A USEFUL LAYER OF MONOCRYSTALLINE SEMICONDUCTOR MATERIAL 有权
标题翻译：具有有用的单晶半导体材料层的基板的制造
公开(公告)号：US20110171812A1
公开(公告)日：2011-07-14
申请号：US12984895
申请日：2011-01-05
申请人： Fabrice Letertre , Bruno Ghyselen , Olivier Rayssac , Pierre Rayssac , Gisèle Rayssac
发明人： Fabrice Letertre , Bruno Ghyselen , Olivier Rayssac , Pierre Rayssac , Gisèle Rayssac
IPC分类号： H01L21/30
CPC分类号： H01L21/187 , H01L21/76254
摘要： The invention relates to methods for fabricating a semiconductor substrate. In one embodiment, the method includes transferring a seed layer on to a support substrate; and depositing a working layer on the seed layer to form a composite substrate. The seed layer is made of a material that accommodates thermal expansion of the support substrate and of the working layer. In another embodiment, the method includes providing a source substrate with a weakened zone defining a nucleation layer, bonding a support substrate to the source substrate, detaching the nucleation layer and support substrate at the weakened zone by applying laser irradiation stress, depositing a semiconductor material upon the nucleation layer, bonding a target substrate to the deposited layer and removing the support substrate and nucleation layer. The result is a semiconductor substrate that includes the layer of semiconductor material on a support or target substrate.
摘要翻译：本发明涉及制造半导体衬底的方法。在一个实施例中，该方法包括将种子层转移到支撑衬底上; 以及在种子层上沉积工作层以形成复合衬底。种子层由容纳支撑基板和工作层的热膨胀的材料制成。在另一个实施例中，该方法包括：提供源极基底，其具有限定成核层的弱化区域，将支撑基底结合到源极基底，通过施加激光照射应力在弱化区域分离成核层和支撑基底，沉积半导体材料在成核层上，将目标衬底粘合到沉积层上并去除支撑衬底和成核层。结果是在支撑体或靶基板上包括半导体材料层的半导体衬底。

3. 发明申请

US20110039368A1 METHODS FOR MAKING SUBSTRATES AND SUBSTRATES FORMED THEREFROM 有权
标题翻译：用于制造基板的方法和形成的基板
公开(公告)号：US20110039368A1
公开(公告)日：2011-02-17
申请号：US12914194
申请日：2010-10-28
申请人： Alice Boussagol , Bruce Faure , Bruno Ghyselen , Fabrice Letertre , Olivier Rayssac , Pierre Rayssac , Gisèle Rayssac
发明人： Alice Boussagol , Bruce Faure , Bruno Ghyselen , Fabrice Letertre , Olivier Rayssac , Pierre Rayssac , Gisèle Rayssac
IPC分类号： H01L31/18 , H01L21/30
CPC分类号： H01L21/76254 , C30B25/18 , C30B33/00 , H01L21/2007
摘要： A method for making substrates for use in optics, electronics, or opto-electronics. The method may include transferring a seed layer onto a receiving substrate and depositing a useful layer onto the seed layer. The thermal expansion coefficient of the receiving support may be identical to or slightly larger than the thermal expansion coefficient of the useful layer and the thermal expansion coefficient of the seed layer may be substantially equal to the thermal expansion coefficient of the receiving support. Preferably, the nucleation layer and the intermediate support have substantially the same chemical composition.
摘要翻译：一种用于制造用于光学，电子或光电子的基板的方法。该方法可以包括将种子层转移到接收衬底上并将有用层沉积到种子层上。接收支撑件的热膨胀系数可以与有用层的热膨胀系数相同或略大，并且种子层的热膨胀系数可以基本上等于接收支撑件的热膨胀系数。优选地，成核层和中间载体具有基本上相同的化学组成。

4. 发明申请

US20070287273A1 METHODS FOR MAKING SUBSTRATES AND SUBSTRATES FORMED THEREFROM 有权
标题翻译：用于制造基板的方法和形成的基板
公开(公告)号：US20070287273A1
公开(公告)日：2007-12-13
申请号：US11840696
申请日：2007-08-17
申请人： Alice Boussagol , Bruce Faure , Bruno Ghyselen , Fabrice Letertre , Olivier Rayssac , Pierre Rayssac , Gisele Rayssac
发明人： Alice Boussagol , Bruce Faure , Bruno Ghyselen , Fabrice Letertre , Olivier Rayssac , Pierre Rayssac , Gisele Rayssac
IPC分类号： H01L21/20
CPC分类号： H01L21/76254 , C30B25/18 , C30B33/00 , H01L21/2007
摘要： A method for making substrates for use in optics, electronics, or opto-electronics. The method may include transferring a seed layer onto a receiving support and depositing a useful layer onto the seed layer. The thermal expansion coefficient of the receiving support may be identical to or slightly larger than the thermal expansion coefficient of the useful layer and the thermal expansion coefficient of the seed layer may be substantially equal to the thermal expansion coefficient of the receiving support. Preferably, the nucleation layer and the intermediate support have substantially the same chemical composition.
摘要翻译：一种用于制造用于光学，电子或光电子的基板的方法。该方法可以包括将种子层转移到接收支撑体上并将有用的层沉积到种子层上。接收支撑件的热膨胀系数可以与有用层的热膨胀系数相同或略大，并且种子层的热膨胀系数可以基本上等于接收支撑件的热膨胀系数。优选地，成核层和中间载体具有基本上相同的化学组成。

5. 发明申请

US20120058621A1 FABRICATION OF SUBSTRATES WITH A USEFUL LAYER OF MONOCRYSTALLINE SEMICONDUCTOR MATERIAL 有权
标题翻译：具有有用的单晶半导体材料层的基板的制造
公开(公告)号：US20120058621A1
公开(公告)日：2012-03-08
申请号：US13291468
申请日：2011-11-08
申请人： Fabrice Letertre , Bruno Ghyselen , Olivier Rayssac , Pierre Rayssac , Gisele Rayssac
发明人： Fabrice Letertre , Bruno Ghyselen , Olivier Rayssac , Pierre Rayssac , Gisele Rayssac
IPC分类号： H01L21/762
CPC分类号： H01L21/187 , H01L21/76254
摘要： The invention relates to methods for fabricating a semiconductor substrate. In one embodiment, the method includes providing an support that includes a barrier layer thereon for preventing loss by diffusion of elements derived from dissociation of the support at epitaxial growth temperatures; providing a seed layer on the barrier layer, wherein the seed layer facilitates epitaxial growth of a single crystal III-nitride semiconductor layer thereon; epitaxially growing a nitride working layer on the thin seed layer; and removing the support to form the substrate.
摘要翻译：本发明涉及制造半导体衬底的方法。在一个实施方案中，该方法包括提供在其上包括阻挡层的载体，用于防止在外延生长温度下衍生自载体解离的元素的扩散而损失; 在所述阻挡层上提供种子层，其中所述种子层有助于其上的单晶III族氮化物半导体层的外延生长; 在薄种子层上外延生长氮化物工作层; 并移除支撑物以形成基底。

6. 发明申请

US20090289332A1 METHODS FOR MAKING SUBSTRATES AND SUBSTRATES FORMED THEREFROM 有权
标题翻译：用于制造基板的方法和形成的基板
公开(公告)号：US20090289332A1
公开(公告)日：2009-11-26
申请号：US12536082
申请日：2009-08-05
申请人： Alice Boussagol , Bruce Faure , Bruno Ghyselen , Fabrice Letertre , Olivier Rayssac , Pierre Rayssac , Gisele Rayssac
发明人： Alice Boussagol , Bruce Faure , Bruno Ghyselen , Fabrice Letertre , Olivier Rayssac , Pierre Rayssac , Gisele Rayssac
IPC分类号： H01L29/02
CPC分类号： H01L21/76254 , C30B25/18 , C30B33/00 , H01L21/2007
摘要： A method for making substrates for use in optics, electronics, or opto-electronics. The method may include transferring a seed layer onto a receiving support and depositing a useful layer onto the seed layer. The thermal expansion coefficient of the receiving support may be identical to or slightly larger than the thermal expansion coefficient of the useful layer and the thermal expansion coefficient of the seed layer may be substantially equal to the thermal expansion coefficient of the receiving support. Preferably, the nucleation layer and the intermediate support have substantially the same chemical composition.
摘要翻译：一种用于制造用于光学，电子或光电子的基板的方法。该方法可以包括将种子层转移到接收支撑体上并将有用的层沉积到种子层上。接收支撑件的热膨胀系数可以与有用层的热膨胀系数相同或略大，并且种子层的热膨胀系数可以基本上等于接收支撑件的热膨胀系数。优选地，成核层和中间载体具有基本上相同的化学组成。

7. 发明申请

US20110233733A1 METHOD OF FABRICATING A RELEASE SUBSTRATE 审中-公开
标题翻译：制造释放基板的方法
公开(公告)号：US20110233733A1
公开(公告)日：2011-09-29
申请号：US13151358
申请日：2011-06-02
申请人： Olivier Rayssac , Pierre Rayssac , Gisèle Rayssac , Takeshi Akatsu
发明人： Olivier Rayssac , Pierre Rayssac , Gisèle Rayssac , Takeshi Akatsu
IPC分类号： H01L29/06 , B82Y99/00
CPC分类号： H01L21/76254 , H01L21/76259 , Y10S117/915
摘要： The invention relates to a release substrate produced from semiconductor materials, and which includes a first substrate release layer having a surface in contact with a connecting layer, and a second substrate release layer having a surface in contact with the connecting layer opposite the first substrate release layer so that the connecting layer is located between the first substrate release layer and second substrate release layer; and a concentrated zone of solid nanoparticles located within the connecting layer to maintain the bonding energy of the reversible connection substantially constant even when the substrate is exposed to heat treatment while also facilitating breaking of the connecting layer by mechanical action.
摘要翻译：本发明涉及由半导体材料制成的剥离基板，其包括具有与连接层接触的表面的第一基板剥离层和具有与连接层相对的表面与第一基板释放相反的第二基板剥离层使得连接层位于第一基板剥离层和第二基板剥离层之间; 以及位于连接层内的固体纳米颗粒的集中区域，以便即使当衬底暴露于热处理同时还有助于通过机械作用破坏连接层时，可逆连接的结合能基本上保持不变。

8. 发明申请

US20080014712A1 METHOD FOR DIRECT BONDING TWO SEMICONDUCTOR SUBSTRATES 有权
标题翻译：用于直接结合两个半导体衬底的方法
公开(公告)号：US20080014712A1
公开(公告)日：2008-01-17
申请号：US11624070
申请日：2007-01-17
申请人： Konstantin Bourdelle , Carlos Mazure , Olivier Rayssac , Pierre Rayssac , Gisele Rayssac
发明人： Konstantin Bourdelle , Carlos Mazure , Olivier Rayssac , Pierre Rayssac , Gisele Rayssac
IPC分类号： H01L21/30
CPC分类号： H01L21/187
摘要： The invention provides methods of direct bonding substrates at least one of which includes a layer of semiconductor material that extends over its front face or in the proximity thereof. The provided methods include, prior to bonding, subjecting the bonding face of at least one substrate comprising a semiconductor material to selected heat treatment at a selected temperature and in a selected gaseous atmosphere. The bonded substrates are useful for electronic, optic, or optoelectronic applications.
摘要翻译：本发明提供了直接接合基底的方法，其中至少一个包括在其前表面或其附近延伸的半导体材料层。所提供的方法包括，在接合之前，使包含半导体材料的至少一个衬底的结合面在所选择的温度和选定的气体气氛中进行选择的热处理。键合的衬底可用于电子，光学或光电子应用。

9. 发明申请

US20080014714A1 METHOD OF FABRICATING A HYBRID SUBSTRATE 有权
标题翻译：混合基质的制备方法
公开(公告)号：US20080014714A1
公开(公告)日：2008-01-17
申请号：US11832431
申请日：2007-08-01
申请人： Konstantin BOURDELLE , Carlos Mazure , Olivier Rayssac , Pierre Rayssac , Gisele Rayssac
发明人： Konstantin BOURDELLE , Carlos Mazure , Olivier Rayssac , Pierre Rayssac , Gisele Rayssac
IPC分类号： H01L21/30
CPC分类号： H01L21/187
摘要： A method of fabricating a hybrid substrate by direct bonding of donor and receiver substrates where each substrate has a respective front face and surface, with the front face of the receiver substrate having a semiconductor material near the surface, and the donor substrate including a zone of weakness that defines a layer to be transferred. The method includes preparing the substrate surfaces by exposing the surface of the receiver substrate to a temperature from about 900° C. to about 1200° C. in an inert atmosphere for at least 30 sec; directly bonding together the front faces of the prepared substrates to form a composite substrate; heat treating the composite substrate to increase bonding strength between the front surfaces of the donor and receiver substrates; and transferring the layer from the donor substrate by detaching the remainder of the donor substrate at the zone of weakness.
摘要翻译：一种制造混合基板的方法，所述方法通过施主和接收器基板的直接接合，其中每个基板具有相应的正面和表面，其中所述接收器基板的前表面具有靠近所述表面的半导体材料，所述施主基板包括：定义要转移的层的弱点。该方法包括通过在惰性气氛中将接收器基底的表面暴露于约900℃至约1200℃的温度至少30秒来制备基底表面; 将所制备的基板的正面直接接合在一起以形成复合基板; 对复合基板进行热处理以增加供体和接收器基板的前表面之间的结合强度; 以及通过在弱化区域分离供体基质的剩余部分而从施主衬底转移层。

10. 发明申请

US20070077729A1 Method of fabricating a release substrate 有权
标题翻译：制造剥离基材的方法
公开(公告)号：US20070077729A1
公开(公告)日：2007-04-05
申请号：US11481696
申请日：2006-07-05
申请人： Olivier Rayssac , Takeshi Akatsu , Pierre Rayssac , Gisele Rayssac
发明人： Olivier Rayssac , Takeshi Akatsu , Pierre Rayssac , Gisele Rayssac
IPC分类号： H01L21/30
CPC分类号： H01L21/76254 , H01L21/76259 , Y10S117/915
摘要： The invention relates to a method of fabricating a release substrate produced from semiconductor materials, the method comprising creating a reversible connection between two substrate release layers characterized in that the reversible connection is formed by a connecting layer produced using a first material as the basis, the connecting layer further comprising a nanoparticle concentrating zone of a second material disposed to facilitate release of the substrate, the first and second materials being selected to maintain the bonding energy of the reversible connection substantially constant even when the substrate is exposed to heat treatment.
摘要翻译：本发明涉及一种制造由半导体材料制成的剥离衬底的方法，该方法包括在两个衬底释放层之间产生可逆连接，其特征在于可逆连接由以第一材料为基础的连接层形成，连接层还包括设置成便于释放衬底的第二材料的纳米颗粒聚集区，选择第一和第二材料以便即使当衬底暴露于热处理时，也可以维持可逆连接的结合能基本恒定。

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