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1. 发明申请

WO2008095526A3 METHOD FOR APPLYING A STRUCTURE TO A SEMICONDUCTOR ELEMENT 审中-公开
标题翻译：用于将结构施加到半导体部件的方法
公开(公告)号：WO2008095526A3
公开(公告)日：2008-12-18
申请号：PCT/EP2007011251
申请日：2007-12-20
申请人： FRAUNHOFER GES FORSCHUNG , SCHULTZ OLIVER , GRANEK FILIP , GROHE ANDREAS
发明人： SCHULTZ OLIVER , GRANEK FILIP , GROHE ANDREAS
IPC分类号： H01L21/768
CPC分类号： H01L31/022425 , H01L21/0272 , H01L21/7688 , Y02E10/50
摘要： The invention relates to a method for applying a predetermined structure of a structural material to a semiconductor element. Said method comprises the following steps: A) partially covering a surface of the semiconductor element with a masking layer, B) applying a film of a structural material to the masking layer and to the surface of the semiconductor element in the zones that are devoid of the masking layer and C) removing the masking layer together with the structural material present on the masking layer. The method according to the invention is characterized in that between process steps B and C the film of structural material is partially removed in a process step B2.
摘要翻译：本发明涉及一种用于在半导体器件上施加的结构材料的预定图案的方法，包括步骤：a）部分地覆盖所述半导体器件的表面与掩模层，B）中的掩蔽层上，并在由所述掩蔽层的凹应用结构材料制成的膜半导体器件表面上的区域;以及C）用位于掩模层上的结构材料分离掩模层。在工艺步骤B2中的工艺步骤B和C之间，结构材料的膜部分地被去除是重要的。

2. 发明申请

WO2010099863A3 FRONT-AND-BACK CONTACT SOLAR CELLS, AND METHOD FOR THE PRODUCTION THEREOF 审中-公开
标题翻译：两侧接触用于制造太阳能电池和方法
公开(公告)号：WO2010099863A3
公开(公告)日：2010-12-29
申请号：PCT/EP2010000921
申请日：2010-02-15
申请人： FRAUNHOFER GES FORSCHUNG , GRANEK FILIP , KRAY DANIEL , MAYER KUNO , ALEMAN MONICA , HOPMANN SYBILLE
发明人： GRANEK FILIP , KRAY DANIEL , MAYER KUNO , ALEMAN MONICA , HOPMANN SYBILLE
IPC分类号： H01L31/0224 , B23K26/00 , B23K26/14 , H01L31/0352 , H01L31/068 , H01L31/18
CPC分类号： H01L31/1804 , B23K26/0084 , B23K26/146 , H01L31/022425 , H01L31/068 , Y02E10/547 , Y02P70/521
摘要： The invention relates to a method for producing front-and-back contact solar cells. Said method is based on microstructuring a wafer that has a dielectric layer, and doping the microstructured areas. A metal-containing seed layer is then deposited, and the contacts are galvanically reinforced. The invention also relates to solar cells that can be produced using said method.
摘要翻译：本发明涉及一种方法，对于双方的制备与基于提供与晶片的掺杂的介电层的一微图案，以及微结构化区域的太阳能电池。以下含金属种子层的沉积和触点构成的电加强发生。同样，本发明涉及这样的太阳能电池可以制造。

3. 发明申请

WO2012159963A8 METHOD FOR HOMOGENIZING THE LASER BEAM PROFILE IN PROCESSES USING A LASER GUIDED BY A LIQUID JET AND CORRESPONDING DEVICE 审中-公开
标题翻译：方法同质化过程中的激光光束轮廓用液体喷射而出，激光和相关设备
公开(公告)号：WO2012159963A8
公开(公告)日：2013-02-28
申请号：PCT/EP2012059162
申请日：2012-05-16
申请人： FRAUNHOFER GES FORSCHUNG , FELL ANDREAS , GRANEK FILIP
发明人： FELL ANDREAS , GRANEK FILIP
IPC分类号： B23K26/14 , B23K26/40
CPC分类号： B23K26/146 , B23K26/40 , B23K2203/50
摘要： The invention relates to a method for homogenizing the laser beam profile in processes using a laser guided by a liquid jet, in which the laser beam (2) generated in a laser source (1) is coupled by means of focusing optics (4) into a liquid jet (7) that is emerging from a nozzle (6) and is directed onto the surface to be worked. Homogenizing the laser beam profile allows the quality of the working performed to be improved in processes in which the laser is guided by a liquid jet.
摘要翻译：本发明涉及一种用于均质化使用液体喷射引导的激光在过程中的激光束分布曲线，其中，在一个激光源（1）生成的激光束（2）部分地涉及了待处理表面和流出喷嘴（6）排出的液体射流的（7 ）由聚焦透镜（4）的手段耦接。通过LaserstrahIprofils的均质化处理质量可以与液体喷射引导的激光工艺来改善。

4. 发明申请

WO2010099862A2 DEVICE AND METHOD FOR SIMULTANEOUSLY MICROSTRUCTURING AND DOPING SEMICONDUCTOR SUBSTRATES 审中-公开
标题翻译：装置和方法用于同时微结构和半导体衬底掺杂
公开(公告)号：WO2010099862A2
公开(公告)日：2010-09-10
申请号：PCT/EP2010000918
申请日：2010-02-15
申请人： FRAUNHOFER GES FORSCHUNG , UNIV ALBERT LUDWIGS FREIBURG , MAYER KUNO , KROSSING INGO , KNAPP CARSTEN , GRANEK FILIP , MESEC MATTHIAS , RODOFILI ANDREAS
发明人： MAYER KUNO , KROSSING INGO , KNAPP CARSTEN , GRANEK FILIP , MESEC MATTHIAS , RODOFILI ANDREAS
IPC分类号： B23K26/14 , C30B31/04 , H01L21/268
CPC分类号： H01L21/268 , B23K26/0084 , B23K26/146 , H01L21/228 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： The invention relates to a device and to a method for simultaneously microstructuring and doping semiconductor substrates with boron, wherein the semiconductor substrate is treated by means of a laser beam coupled into a fluid stream, wherein the fluid stream comprises at least one boron compound. The method according to the invention is used in the area of solar cell technology and in other areas of semiconductor technology, in which a locally limited boron doping is significant.
摘要翻译：本发明涉及一种用于与硼同时微结构，掺杂和半导体基板的设备和方法，其中所述半导体衬底与耦合液体喷射激光束，其中，所述液体射流包含至少一种硼化合物进行处理。使用发现在太阳能电池技术领域，以及在半导体技术中，在其中局部硼掺杂剂具有的意义的其它区域的本发明方法。

5. 发明申请

WO2011141139A2 METHOD FOR PRODUCING A SOLAR CELL THAT CAN BE CONTACTED ON ONE SIDE FROM A SILICON SEMICONDUCTOR SUBSTRATE 审中-公开
标题翻译：为了制造方法片面接触太阳能电池由硅半导体衬底
公开(公告)号：WO2011141139A2
公开(公告)日：2011-11-17
申请号：PCT/EP2011002239
申请日：2011-05-05
申请人： FRAUNHOFER GES FORSCHUNG , HERMLE MARTIN , GRANEK FILIP , REICHEL CHRISTIAN
发明人： HERMLE MARTIN , GRANEK FILIP , REICHEL CHRISTIAN
IPC分类号： H01L31/18
CPC分类号： H01L31/022425 , H01L31/022441 , H01L31/0747 , Y02E10/50
摘要： The invention relates to a method for producing a solar cell that can be contacted on one side from a silicon semiconductor substrate (1) of a first doping type, comprising the following method steps: A) cleaning the surface of at least one emitter face (1a) of the semiconductor substrate provided for the application of an emitter layer (2), B) applying an emitter layer (2) of a second doping type opposite from the first doping type to the emitter face (1a) of the semiconductor substrate and/or to one or more intermediate layers covering the emitter face (1a), in order to form a p-n junction between the emitter layer (2) and the semiconductor substrate (1), C) applying a transversely conductive emitter contacting layer (3), which at least partially overlaps the emitter layer (2) and/or additional intermediate layers covering the emitter layer (2), wherein the emitter layer (2) and the emitter contacting layer (3) are electrically conductively connected and do not cover a plurality of base contacting regions of the emitter face (1a) of the semiconductor substrate and/or are removed again in a plurality of base contacting regions. It is essential that the method comprises the following additional method steps: D) applying an insulating layer (5) onto the emitter face (1a) of the semiconductor substrate at least on the base contacting regions and onto the surface regions of the emitter layer (2) surrounding the base contacting regions and/or of the emitter contacting layer (3), E) opening a plurality of base high doping regions, wherein each base high doping region (4b) is a portion of a base contacting region and a doping agent of the first doping type is introduced locally on the base high doping regions, wherein the local introduction of the doping agent takes place by locally heating at least the semiconductor substrate on the base high doping regions, F) applying one or more base contacting structures by means of an electrochemical process, wherein the base contacting structure is designed to at least partially cover at least one base high doping region (4b) and is electrically conductively connected to the semiconductor substrate (1), G) reinforcing the base contacting structure. It is furthermore essential that the emitter layer (2) is overall not heated to more than 250°C in the method steps that follow method step B.
摘要翻译：本发明涉及一种用于制造由第一掺杂类型的硅半导体基板（1）的单接触太阳能电池中，下面的方法步骤，其包括：表面清洁至少一个E-（2）设置在所述发射极侧（1a）的所述应用程序的米特层的半导体衬底，B的沉积的发射极层（2）的第二的，相反的在半导体基板和/或覆盖物的一个或多个中间层的发射极侧（1a）的发射极侧（1a）的所述第一掺杂类型，对发射极层（2）和半导体衬底之间的pn结的形成（ 1），C施加横向导电Emitterkontaktierungsschicht（3），其至少覆盖所述发射极层（2）和/或进一步地，所述发射器（2）覆盖所述中间层部分层，所述发射极层（2）和Emitterkontaktierungsschicht（3）电连接和多个潜在的合同 taktierungsbereichen发射极侧（1a）中不包括和/或富含Basiskontaktierungsbe回在多个被去除，必要的是，该方法包括在半导体衬底的另一方法步骤：将一绝缘层（5）至少在Basiskon- taktierungsbereichenð 在半导体基板和所述发射极层（2）和/或所述Emitterkontak- tierungsschicht的周围的Basiskontaktierungsbereiche表面区域的发射极侧（1a）中（3）公开电子连接到多个基站的高掺杂区域，每个基地高掺杂区（4b）的一个Basiskontaktierungsbereiches的一部分和本地驱动高杂质区域，其中所述掺杂剂的局部驱动由至少在半导体基板到基座高杂质区域的局部加热制成的基础上的第一掺杂类型的掺杂剂，F施加一个或多个Basiskont 通过电化学方法，其中所述Basiskontaktierungsstruktur形成至少一个基本高杂质区域（4b）的连接的至少部分地覆盖，并与所述半导体衬底的装置共享大约结构（1）是导电的，Basiskontaktierungsstruktur的G增益，并且在没有全球变暖在方法步骤B以下方法步骤所述发射极层（2）上超过250℃下进行

6. 发明申请

WO2010099892A3 REAR CONTACT SOLAR CELLS, AND METHOD FOR THE PRODUCTION THEREOF 审中-公开
标题翻译：具有背面接触和方法太阳电池用于生产
公开(公告)号：WO2010099892A3
公开(公告)日：2010-12-02
申请号：PCT/EP2010001152
申请日：2010-02-22
申请人： FRAUNHOFER GES FORSCHUNG , GRANEK FILIP , KRAY DANIEL , MAYER KUNO , ALEMAN MONICA , HOPMAN SYBILLE
发明人： GRANEK FILIP , KRAY DANIEL , MAYER KUNO , ALEMAN MONICA , HOPMAN SYBILLE
IPC分类号： H01L31/18 , H01L21/228 , H01L21/268 , H01L21/283 , H01L31/0224
CPC分类号： H01L31/022441 , H01L31/0682 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： The invention relates to a method for producing rear contact solar cells. Said method is based on microstructuring a wafer that has a dielectric layer, doping the microstructured areas on the rear side, and diffusing an emitter on the front side. A metal-containing seed layer is then deposited, and the contacts are galvanically reinforced. The invention also relates to solar cells that can be produced using said method.
摘要翻译：本发明涉及一种用于生产基于设置有dielektrisehen层和微结构化区域的上背面的掺杂和在前侧的发射极扩散的晶片的显微结构的太阳能电池用背面的处理。以下含金属种子层的沉积和在背面上的触点构成的电加强发生。同样，本发明涉及这样的太阳能电池可以制造。

7. 发明申请

WO2009092426A3 SOLAR CELL AND METHOD FOR THE PRODUCTION OF A SOLAR CELL 审中-公开
标题翻译：太阳能电池及其制备方法的太阳能电池
公开(公告)号：WO2009092426A3
公开(公告)日：2009-09-24
申请号：PCT/EP2008010713
申请日：2008-12-16
申请人： FRAUNHOFER GES FORSCHUNG , UNIV ALBERT LUDWIGS FREIBURG , SCHULTZ-WITTMANN OLIVER , GRANEK FILIP , HERMLE MARTIN , BENICK JAN
发明人： SCHULTZ-WITTMANN OLIVER , GRANEK FILIP , HERMLE MARTIN , BENICK JAN
IPC分类号： H01L31/0224 , H01L31/0352 , H01L31/068 , H01L31/18
CPC分类号： H01L31/0682 , H01L31/022441 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： The invention relates to a solar cell having a front side for coupling electromagnetic radiation, and a rear side, comprising at least one base metallization (3) and at least one emitter metallization (6), and a semi-conductor structure, which has at least one base region (1) of a first doping type, and at least one emitter region (2) of a second doping type opposite the first doping type, for forming a p-n junction between the base and the emitter, wherein the base metallization (3) is connected to the base region (1) and the emitter metallization (6) is connected to the emitter region (2) in an electrically conductive manner. The base metallization (3) and the emitter metallization (6) are both disposed on a metallization side of the solar cell, which is either the front side or the rear side of the solar cell, and the emitter region (2) extends at least partially along the metallization side of the solar cell. It is essential to the invention that the emitter region (2) extends at least partially into the region of the metallization side covered by the base metallization (3), and that the semi-conductor structure further has an insulating region (4) of the first doping type, which extends along the metallization side of the solar cell at least partially between the base metallization (3) and the emitter region (2). The invention further relates to a method for the production of a solar cell.
摘要翻译：本发明涉及一种具有用于耦合的电磁辐射和后侧的前侧上的太阳能电池，包括至少一种碱金属化（3）和至少一个发射极金属（6）和包括半导体结构的至少一个第一掺杂类型的基部（1）和至少一个发射区（2 ）第二，相反于该第一掺杂类型的掺杂类型的，它包括基部和发射极之间的pn结的形成，所述基础金属化（3）（与该基极区域1）和发射极金属化（6）到发射极区域（2）导电地连接基础金属化（3）和发射极金属化（6）都位于所述太阳能电池的金属化，这是前部或太阳能电池的背面和发射极区（2）沿着所述太阳能电池的金属化侧上的至少部分地延伸。至关重要的是，在发射极区域（2）至少部分地延伸覆盖在基础金属化（3）的金属化的区域中，并且，除了所述半导体结构的隔离区（4）具有沿着所述太阳能电池的金属化侧上的至少部分地之间延伸的第一掺杂类型基础金属化（3）和发射极区（2）。本发明还涉及一种用于制造太阳能电池的方法。

8. 发明专利

IL261919B Bottom-up method for forming wire structures upon a substrate 未知
公开(公告)号：IL261919B
公开(公告)日：2023-01-01
申请号：IL26191918
申请日：2018-09-23
申请人： XTPL S A , GRANEK FILIP , ROZYNEK ZBIGNIEW
发明人： GRANEK FILIP , ROZYNEK ZBIGNIEW
IPC分类号： B82Y40/00 , C25D13/12 , C25D13/22 , H01L21/02 , H01L21/027 , H01L21/326 , H01L21/66 , H01L21/67 , H01L29/06 , H01L29/41
摘要： A method is provided for forming structures upon a substrate. The method comprises: depositing fluid onto a substrate so as to define a wetted region, the fluid containing electrically polahzable nanoparticles; applying an alternating electric field to the fluid on the region, using a first electrode and a second electrode, so that a plurality of the nanoparticles are assembled to form an elongate structure extending from the first electrode towards the second electrode; and removing the fluid such that the elongate structure remains upon the substrate.

9. 发明专利

IL261919D0 Bottom-up method for forming wire structures upon a substrate 未知
公开(公告)号：IL261919D0
公开(公告)日：2018-10-31
申请号：IL26191918
申请日：2018-09-23
申请人： XTPL S A , GRANEK FILIP , ROZYNEK ZBIGNIEW
发明人： GRANEK FILIP , ROZYNEK ZBIGNIEW
IPC分类号： B82B20060101
摘要： A method is provided for forming structures upon a substrate. The method comprises: depositing fluid onto a substrate so as to define a wetted region, the fluid containing electrically polahzable nanoparticles; applying an alternating electric field to the fluid on the region, using a first electrode and a second electrode, so that a plurality of the nanoparticles are assembled to form an elongate structure extending from the first electrode towards the second electrode; and removing the fluid such that the elongate structure remains upon the substrate.

10. 发明专利

DE102011086302A1 Verfahren zur Herstellung einer metallischen Kontaktierungsstruktur auf einer Oberfläche einer Halbleiterstruktur und photovoltaische Solarzelle 未知
公开(公告)号：DE102011086302A1
公开(公告)日：2013-05-16
申请号：DE102011086302
申请日：2011-11-14
申请人： FRAUNHOFER GES FORSCHUNG
发明人： GLATTHAAR MARKUS , BARTSCH JONAS , RAUER MICHAEL , SCHMIGA CHRISTIAN DIPL PHYS , GRANEK FILIP , GLUNZ STEFAN , KALIO ANDRE
IPC分类号： H01L31/18 , H01L31/0224
摘要： Die Erfindung betrifft ein Verfahren zur Herstellung einer metallischen Kontaktierungsstruktur auf einer Oberfläche einer Halbleiterstruktur, welche Halbleiterstruktur eine photovoltaische Solarzelle oder eine Vorstufe im Herstellungsprozess der photovoltaischen Solarzelle ist, folgende Verfahrensschritte umfassend: A. Aufbringen einer aluminiumhaltigen Schicht auf die Oberfläche der Halbleiterstruktur zumindest in einem Kontaktierungsbereich der Oberfläche; B. Einlegieren von Aluminium aus der aluminiumhaltigen Schicht in die Halbleiterstruktur durch Wärmeeinwirkung zur Ausbildung eines mittels Aluminium als Dotierstoff p-dotierten Bereiches in der Halbleiterstruktur an dem Kontaktierungsbereich; C. Zumindest teilweises Entfernen der aluminiumhaltigen Schicht zumindest in dem Kontaktierungsbereich; D. Elektrochemische Metallisierung des Kontaktierungsbereiches und/oder der behandelten Aluminiumoberfläche in dem Kontaktierungsbereich mit mindestens einem weiteren Metall, welches weitere Metall nicht Aluminium ist. Die Erfindung betrifft weiterhin eine photovoltaische Solarzelle.

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