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1. 发明申请

WO2008025353A3 APPARATUS AND METHOD OF FORMING THIN SILICON NITRIDE LAYERS ON SURFACES OF CRYSTALLINE SILICON SOLAR WAFERS 审中-公开
标题翻译：用于在晶体硅太阳能晶片的表面上形成薄氮化硅层的装置和方法
公开(公告)号：WO2008025353A3
公开(公告)日：2008-05-08
申请号：PCT/DE2007001580
申请日：2007-08-29
申请人： FRAUNHOFER GES FORSCHUNG , DRESLER BIRTE , HOPFE VOLKMAR , DANI INES , MOELLER RAINER , ROSINA MILAN
发明人： DRESLER BIRTE , HOPFE VOLKMAR , DANI INES , MOELLER RAINER , ROSINA MILAN
IPC分类号： C23C16/34 , C23C16/452 , C23C16/455 , H01L31/18
CPC分类号： C23C16/345 , C23C16/45519 , C23C16/482 , C23C16/545
摘要： The invention relates to an apparatus and a method of forming thin silicon nitride layers on surfaces of crystalline silicon solar wafers. It is an object of the invention to provide possibilities allowing thin silicon nitride layers to be produced on surfaces of crystalline silicon solar wafers, exhibiting a defined layered-material formation having desired properties. The apparatus of the invention is designed so that at a reaction chamber region, above a silicon solar wafer surface to be coated, there is a supply for at least one precursor containing gaseous silicon, this precursor contributing to layer formation. Moreover, a source emitting electromagnetic radiation, which is a plasma source, is disposed in such a way that the electromagnetic radiation emitted effects photolytic activation of atoms and/or molecules of the precursor(s). The plasma source ought to be so disposed, and is also to be operated in such a way, that there is no direct influence of the plasma on the silicon solar wafer surface and on the precursors that lead to layer formation, and it is exclusively the electromagnetic radiation emitted which acts.
摘要翻译：本发明涉及用于在晶体硅太阳能晶片的表面上形成薄氮化硅层的设备和方法。本发明的一个目的是提供一种装置，通过该装置可以在具有所需特性的某种涂层材料形成的晶体硅太阳能晶片的表面上生产薄硅酸锌晶片。根据本发明的装置被设计为使得用于至少一种气态含硅前体的供应物存在于待涂布的硅太阳能晶片表面上方的反应室区域处，这有助于层形成。另外，发射作为等离子体源的电磁辐射的源被布置为使得前体的原子和/或分子的光解激活与发射的电磁辐射发生。在这种情况下等离子体源应当被布置，并且还应当被操作为使得等离子体不会对硅太阳能晶片表面和导致层形成的前体发生直接影响，并且仅发射的电磁辐射起作用。

2. 发明申请

WO2008025352A3 APPARATUS AND METHOD OF FORMING THIN LAYERS ON SUBSTRATE SURFACES 审中-公开
标题翻译：设备和方法成形在基材表面薄层
公开(公告)号：WO2008025352A3
公开(公告)日：2008-04-10
申请号：PCT/DE2007001579
申请日：2007-08-29
申请人： FRAUNHOFER GES FORSCHUNG , DRESLER BIRTE , HOPFE VOLKMAR , DANI INES
发明人： DRESLER BIRTE , HOPFE VOLKMAR , DANI INES
IPC分类号： C23C16/452 , C23C16/455 , C23C16/48 , C23C16/54
CPC分类号： C23C16/452 , C23C16/45519 , C23C16/45595 , C23C16/48 , C23C16/545
摘要： The invention relates to an apparatus and a method of forming thin layers on substrate surfaces. It is an object of the invention to provide possibilities allowing thin layers to be produced on substrate surfaces, exhibiting a defined layered-material formation having desired properties. The apparatus of the invention is designed so that at a reaction chamber region, above a substrate surface to be coated, there is a supply for at least one gaseous precursor that contributes to layer formation. Moreover, a source emitting electromagnetic radiation, which is a plasma source, is disposed in such a way that the electromagnetic radiation emitted effects photolytic activation of atoms and/or molecules of the precursor(s). The plasma source ought to be so disposed, and is also to be operated in such a way, that there is no direct influence of the plasma on the substrate surface and on the precursors that lead to layer formation.
摘要翻译：本发明涉及一种装置和用于形成在衬底表面上的薄膜的方法。发明内容本发明提供一种具有该薄层可以在其上具有所需性能的特定层形成材料的衬底表面来生产可用的选项的一个目的。本发明的装置被设计成使得在衬底之上的反应室部分被涂布于至少一种气态前体的进料的表面存在，这有助于膜的形成。此外，电磁辐射发射源，这是一种等离子体源被布置成使得所述发射的电磁辐射是的原子和/或分子的光解活化/前体（S）。等离子体源应被布置在这样的和应当操作，使得在衬底表面上等离子体和领先的到成膜前体没有直接影响发生。

3. 发明申请

WO2009124542A2 METHOD AND DEVICE FOR IGNITING AN ARC 审中-公开
标题翻译：用于点燃电弧闪光的方法和装置
公开(公告)号：WO2009124542A2
公开(公告)日：2009-10-15
申请号：PCT/DE2009000498
申请日：2009-04-07
申请人： FRAUNHOFER GES FORSCHUNG , GRABAU PATRICK , ROCH JULIUS , HOPFE VOLKMAR , DANI INES
发明人： GRABAU PATRICK , ROCH JULIUS , HOPFE VOLKMAR , DANI INES
IPC分类号： H05H1/24
CPC分类号： H05H1/2406 , H05H2001/2412 , H05H2001/3426
摘要： The invention relates to a method and a device for igniting an arc between an anode and a cathode of a plasma source at ambient atmosphere conditions, said cathode being arranged at a distance to the anode and the plasma source being suitable to produce a substrate surface modification. The aim of the invention is to reduce the effort required for igniting an arc and to make the ignition process safer. The invention is characterized in that a barrier discharge is ignited by means of a supplied gas by means of two electrodes that are arranged in parallel to the longitudinal axis between the anode and the cathode, the electrodes being connected to a high voltage generator and being supplied with high-frequency alternating current voltage during ignition. When a direct current voltage is applied to the anode and the cathode, the charge carriers present due to the barrier discharge between the anode and the cathode allow ignition of an arc.
摘要翻译：本发明涉及一种用于点燃在等离子体源一定距离处布置的阳极和阴极之间的电弧的方法和装置，其可以用于在环境大气条件下进行衬底表面改性。本发明的目的是降低点燃等离子体源电弧的费用并使点火过程更安全。在本发明中，该过程是这样的，即通过两个平行于与高压发生器连接的阳极和阴极排列的电极之间的纵向轴线并且在利用高频交流电压点燃时采用供应气体点燃阻挡放电。结果，当施加施加到阳极和阴极的直流电压时，在由阳极和阴极之间的阻挡放电所携带的电荷载流子的情况下，电弧可以被点燃。

4. 发明申请

WO2008025354A3 METHOD FOR SELECTIVE PLASMOCHEMICAL DRY-ETCHING OF PHOSPHOSILICATE GLASS DEPOSITED ON SURFACES OF SILICON WAFERS 审中-公开
标题翻译： METHOD FOR SELECTIVE等离子体增强化学干蚀刻在硅晶片上受过训练的PSG表面
公开(公告)号：WO2008025354A3
公开(公告)日：2008-09-18
申请号：PCT/DE2007001581
申请日：2007-08-29
申请人： FRAUNHOFER GES FORSCHUNG , HOPFE VOLKMAR , DANI INES , LOPEZ ELENA , MOELLER RAINER , HEINTZE MORITZ
发明人： HOPFE VOLKMAR , DANI INES , LOPEZ ELENA , MOELLER RAINER , HEINTZE MORITZ
IPC分类号： H01L21/311 , H01L31/042 , H01L31/18
CPC分类号： H01L21/31116
摘要： The invention relates to a method for selective plasmochemical dry-etching of phosphosilicate glass ((SiO 2 ) x P 2 O 5 ) y ) deposited on surfaces of silicon wafers. The aim of the invention is to provide an economical, effective, selective means for removal of phosphosilicate glass from silicon wafers which at least reduces production losses. Said aim is achieved by selectively plasmochemical dry-etching of the surfaces of crystalline silicon wafers the surfaces of which have been treated with phosphosilicate glass. A plasma formed by a plasma source and an etching gas at atmospheric pressure are directed at the phosphosilicate glass which is thus removed.
摘要翻译：本发明由受过训练的在硅晶片上磷硅酸盐玻璃的表面（（SIO _{2 ）_{X P _{2 0 5 ）_{ý）。发明内容本发明的一个目的是提供一种廉价的，有效的，选择性的和生产损失至少还原能力可以用硅晶片的磷硅酸盐玻璃被移除。在本发明中，该过程是这样的，晶体硅晶片，其表面设置有磷硅酸盐玻璃，有选择地通过等离子体化学蚀刻。这里，通过等离子体源的等离子体和蚀刻气体在大气压力下对PSG形成的图像加以处理，可这样除去。}}}}

5. 发明申请

WO2011072663A3 METHOD FOR THE PRODUCTION OF A THIN-FILM COMPONENT, AND THIN-FILM COMPONENT ACCORDING TO SAID METHOD 审中-公开
标题翻译：根据该方法生产薄层元件和薄层元件的方法
公开(公告)号：WO2011072663A3
公开(公告)日：2012-04-12
申请号：PCT/DE2010001523
申请日：2010-12-17
申请人： FRAUNHOFER GES FORSCHUNG , LASAGNI ANDRES FABIAN , DANI INES
发明人： LASAGNI ANDRES FABIAN , DANI INES
IPC分类号： H01L31/18 , H01L31/0236
CPC分类号： H01L31/1884 , H01L31/0236 , Y02E10/50
摘要： The invention relates to a method for producing an electric, photoelectric, electro-optical, and/or optical thin-film component (1). In said method, at least one optically transparent, electrically conductive layer (TCF layer, 3) that is suitable as a first electric contact of the thin-film component is applied and/or connected to, preferably deposited on a substrate (2). Laser light (4) is applied to and/or injected into at least one of the TCF layers (3) in such a way that said layer/s (3) is/are charged with a certain intensity such that a plurality of depressions (5a, 5b,...) are formed therein as material is removed, and at least one material (6) suitable to generate an electric, photoelectric, electro-optical, and/or optical effect is introduced into, applied to, and/or connected to, preferably deposited on said depression/s (5a, 5b,...).
摘要翻译：本发明涉及一种用于制造电，光电，电光和/或光学薄膜器件（1），其特征在于，上和/或与衬底（2）至少一种合适的作为薄膜组件的第一电接触，光学透明的，电施加导电层（TCF-层，3）和/或连接的，优选沉积，其特征在于，上和/或在TCF-层中的至少一个（3）的激光（4）照射，以便从而在其（3）的强度项进行，并通过在其该强度条目（3）通过去除材料形成的多个凹部（5A，5B，...），并且其中（内和/或在该（n）的所形成的凹部5A，5B， ...）引入，施加和/或连接至少一种用于形成电，光电，电光和/或光学效应（6）的合适材料，优选沉积。

6. 发明申请

WO2011072663A9 METHOD FOR THE PRODUCTION OF A THIN-FILM COMPONENT, AND THIN-FILM COMPONENT ACCORDING TO SAID METHOD 审中-公开
标题翻译：用于生产根据薄膜成分和薄膜COMPONENT用这种方法
公开(公告)号：WO2011072663A9
公开(公告)日：2012-03-08
申请号：PCT/DE2010001523
申请日：2010-12-17
申请人： FRAUNHOFER GES FORSCHUNG , LASAGNI ANDRES FABIAN , DANI INES
发明人： LASAGNI ANDRES FABIAN , DANI INES
IPC分类号： H01L31/18 , H01L31/0236
CPC分类号： H01L31/1884 , H01L31/0236 , Y02E10/50
摘要： The invention relates to a method for producing an electric, photoelectric, electro-optical, and/or optical thin-film component (1). In said method, at least one optically transparent, electrically conductive layer (TCF layer, 3) that is suitable as a first electric contact of the thin-film component is applied and/or connected to, preferably deposited on a substrate (2). Laser light (4) is applied to and/or injected into at least one of the TCF layers (3) in such a way that said layer/s (3) is/are charged with a certain intensity such that a plurality of depressions (5a, 5b,...) are formed therein as material is removed, and at least one material (6) suitable to generate an electric, photoelectric, electro-optical, and/or optical effect is introduced into, applied to, and/or connected to, preferably deposited on said depression/s (5a, 5b,...).
摘要翻译：本发明涉及一种用于制造电，光电，电光和/或光学薄膜器件（1），其特征在于，上和/或与衬底（2）至少一种合适的作为薄膜组件的第一电接触，光学透明的，电施加导电层（TCF-层，3）和/或连接的，优选沉积，其特征在于，上和/或在TCF-层中的至少一个（3）的激光（4）照射，以便从而在其（3）的强度项进行，并通过在其该强度条目（3）通过去除材料形成的多个凹部（5A，5B，...），并且其中（内和/或在该（n）的所形成的凹部5A，5B， ...）被引入至少一种合适的用于形成电，光电，电光和/或光学效应的材料（6），施加和/或连接，优选沉积。

7. 发明申请

WO2010066247A3 MICROWAVE PLASMA SOURCE AND METHOD FOR FORMING A LINEARLY EXTENDED PLASMA UNDER ATMOSPHERIC PRESSURE CONDITIONS 审中-公开
标题翻译：微波等离子体源及在大气压力条件下形成线性长运行等离子体的方法
公开(公告)号：WO2010066247A3
公开(公告)日：2010-11-11
申请号：PCT/DE2009001765
申请日：2009-12-08
申请人： FRAUNHOFER GES FORSCHUNG , ROCH JULIUS , DANI INES , KASKEL STEFAN
发明人： ROCH JULIUS , DANI INES , KASKEL STEFAN
IPC分类号： H05H1/24
CPC分类号： H05H1/46 , H05H2001/463
摘要： The invention relates to a microwave plasma source and to a method for forming a linearly extended plasma under atmospheric pressure conditions. The aim of the invention is to provide a possibility for a large-scale modification of substrate surfaces using a plasma formed under atmospheric pressure conditions, wherein constant conditions can be maintained over the entire surface to be modified. For a microwave plasma source according to the invention, at least one plasma outlet nozzle and at least one inlet for a plasma gas are present at a plasma chamber. At least two units, each having at least one magnetron and a slit antenna, are disposed outside of the plasma chamber at two diametrically opposite sides on a plasma chamber having non-rotationally symmetrical cross sections. The magnetrons can be operated in alternating pulsed mode.
摘要翻译：微波等离子体源和用于在大气压条件下形成线性伸长的等离子体的方法本发明的目的是提供用大气压条件下形成的等离子体对衬底表面进行大规模改性的可能性，其中可在整个待改性表面上保持恒定条件。在根据本发明的微波等离子体源中，等离子体室上存在至少一个等离子体出口喷嘴和至少一个等离子体气体供应源。被连接到等离子体腔室具有非旋转对称的横截面的至少两个单元，它们与至少一种磁控管，和一个缝隙天线形成的，设置在所述等离子体腔室外侧的两个在直径上相对的两侧。 Magentrons将交替脉冲运行。

8. 发明申请

WO2011032983A3 PROCESS FOR THE MANUFACTURE OF WAFERS FOR SOLAR CELLS AT AMBIENT PRESSURE 审中-公开
标题翻译：用于在环境压力下制造太阳能电池的波形的方法
公开(公告)号：WO2011032983A3
公开(公告)日：2011-10-13
申请号：PCT/EP2010063545
申请日：2010-09-15
申请人： SOLVAY FLUOR GMBH , RIVA MARCELLO , LOPEZ ALONSO ELENA , LINASCHKE DORIT , DANI INES , KASKEL STEFAN
发明人： RIVA MARCELLO , LOPEZ ALONSO ELENA , LINASCHKE DORIT , DANI INES , KASKEL STEFAN
IPC分类号： H01L31/18 , H01L21/3065
CPC分类号： H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： Solar cells are manufactured from P-type doped monocrystalline or polycrystalline silicon ingots by sawing wafers and applying an N-type doping. The wafers can be treated by etching them, in a plasma assisted process, with an etching gas containing or consisting of carbonyl fluoride. Hereby, the surface is roughened so that the degree of light reflection is reduced, or glass-like phosphorus-containing oxide coatings caused by phosphorus doping are removed. Carbonyl fluoride is also very suitable to selectively etch silicon oxide in silicon oxide/silicon composites.
摘要翻译：太阳能电池由P型掺杂的单晶硅或多晶硅锭通过锯切晶片制造并施加N型掺杂。可以在等离子体辅助工艺中用含有或由碳酰氟组成的蚀刻气体蚀刻晶片来处理晶片。由此，表面被粗糙化，使得光反射的程度降低，或者去除由磷掺杂引起的玻璃状含磷氧化物涂层。羰基氟化物也非常适合于在氧化硅/硅复合材料中选择性地蚀刻氧化硅。

9. 发明专利

DE102008033660A1 Single-walled carbon nanotube or fullerene producing device, has throttle element that is arranged in channel of temperature-controlled cleaning zone, and allows local reduction of free cross-section in channel 未知
公开(公告)号：DE102008033660A1
公开(公告)日：2010-01-21
申请号：DE102008033660
申请日：2008-07-08
申请人： FRAUNHOFER GES FORSCHUNG
发明人： MAERCZ MATTHIAS , LEISTNER MATTHIAS , HOPFE VOLKMAR , GRAEHLERT WULF , DANI INES , SCHULTRICH BERND
IPC分类号： B82B3/00
摘要： The device has a synthesis zone (1) including a carbon nanotube or fullerene forming unit (12) connected to a carrier gas supply unit. A temperature-controlled cleaning zone (2) is arranged subsequent to the synthesis zone. The cleaning zone has a channel (3) via which single-walled carbon nanotube or fullerene with a carrier gas is formed and supplied to a collector (15). A supply unit (17) is attached the channel and supplies a gaseous oxidation agent i.e. oxygen. A throttle element (4) is arranged in the channel and allows local reduction of free cross-section in the channel. An independent claim is also included for a method for producing single-walled carbon nanotube or fullerene.

10. 发明专利

DE102008052098A1 未知
公开(公告)号：DE102008052098A1
公开(公告)日：2010-04-15
申请号：DE102008052098
申请日：2008-10-14
申请人： FRAUNHOFER GES FORSCHUNG
发明人： ABENDROTH THOMAS , ALTHUES HOLGER , KASKEL STEFAN , DANI INES
IPC分类号： C23C16/40 , C23C16/453
摘要： A method for manufacturing photocatalytically active titanium dioxide layers on substrate surfaces. The method reduces the effort for the manufacture of photocatalytically active titanium dioxide layers and increases the choice for the coating of suitable substrate materials. In the method, a titanium compound present in the gas phase and water vapor are directed to a preheated substrate by means of gas phase hydrolysis and a titanium dioxide layer is foamed on the surface of the substrate by chemical reaction. In this respect, the titanium compound and water vapor are supplied separately from one another so that a flow speed of at least 0.5 m/s is achieved and the time between the first contact of the two gases up to the impact on the surface of the substrate is kept lower than 0.05 s, and in this process the photocatalytically active titanium dioxide layer is formed on the substrate surface.

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