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1. 发明申请

WO2008025353A3 APPARATUS AND METHOD OF FORMING THIN SILICON NITRIDE LAYERS ON SURFACES OF CRYSTALLINE SILICON SOLAR WAFERS 审中-公开
标题翻译：用于在晶体硅太阳能晶片的表面上形成薄氮化硅层的装置和方法
公开(公告)号：WO2008025353A3
公开(公告)日：2008-05-08
申请号：PCT/DE2007001580
申请日：2007-08-29
申请人： FRAUNHOFER GES FORSCHUNG , DRESLER BIRTE , HOPFE VOLKMAR , DANI INES , MOELLER RAINER , ROSINA MILAN
发明人： DRESLER BIRTE , HOPFE VOLKMAR , DANI INES , MOELLER RAINER , ROSINA MILAN
IPC分类号： C23C16/34 , C23C16/452 , C23C16/455 , H01L31/18
CPC分类号： C23C16/345 , C23C16/45519 , C23C16/482 , C23C16/545
摘要： The invention relates to an apparatus and a method of forming thin silicon nitride layers on surfaces of crystalline silicon solar wafers. It is an object of the invention to provide possibilities allowing thin silicon nitride layers to be produced on surfaces of crystalline silicon solar wafers, exhibiting a defined layered-material formation having desired properties. The apparatus of the invention is designed so that at a reaction chamber region, above a silicon solar wafer surface to be coated, there is a supply for at least one precursor containing gaseous silicon, this precursor contributing to layer formation. Moreover, a source emitting electromagnetic radiation, which is a plasma source, is disposed in such a way that the electromagnetic radiation emitted effects photolytic activation of atoms and/or molecules of the precursor(s). The plasma source ought to be so disposed, and is also to be operated in such a way, that there is no direct influence of the plasma on the silicon solar wafer surface and on the precursors that lead to layer formation, and it is exclusively the electromagnetic radiation emitted which acts.
摘要翻译：本发明涉及用于在晶体硅太阳能晶片的表面上形成薄氮化硅层的设备和方法。本发明的一个目的是提供一种装置，通过该装置可以在具有所需特性的某种涂层材料形成的晶体硅太阳能晶片的表面上生产薄硅酸锌晶片。根据本发明的装置被设计为使得用于至少一种气态含硅前体的供应物存在于待涂布的硅太阳能晶片表面上方的反应室区域处，这有助于层形成。另外，发射作为等离子体源的电磁辐射的源被布置为使得前体的原子和/或分子的光解激活与发射的电磁辐射发生。在这种情况下等离子体源应当被布置，并且还应当被操作为使得等离子体不会对硅太阳能晶片表面和导致层形成的前体发生直接影响，并且仅发射的电磁辐射起作用。

2. 发明申请

WO2008025352A3 APPARATUS AND METHOD OF FORMING THIN LAYERS ON SUBSTRATE SURFACES 审中-公开
标题翻译：设备和方法成形在基材表面薄层
公开(公告)号：WO2008025352A3
公开(公告)日：2008-04-10
申请号：PCT/DE2007001579
申请日：2007-08-29
申请人： FRAUNHOFER GES FORSCHUNG , DRESLER BIRTE , HOPFE VOLKMAR , DANI INES
发明人： DRESLER BIRTE , HOPFE VOLKMAR , DANI INES
IPC分类号： C23C16/452 , C23C16/455 , C23C16/48 , C23C16/54
CPC分类号： C23C16/452 , C23C16/45519 , C23C16/45595 , C23C16/48 , C23C16/545
摘要： The invention relates to an apparatus and a method of forming thin layers on substrate surfaces. It is an object of the invention to provide possibilities allowing thin layers to be produced on substrate surfaces, exhibiting a defined layered-material formation having desired properties. The apparatus of the invention is designed so that at a reaction chamber region, above a substrate surface to be coated, there is a supply for at least one gaseous precursor that contributes to layer formation. Moreover, a source emitting electromagnetic radiation, which is a plasma source, is disposed in such a way that the electromagnetic radiation emitted effects photolytic activation of atoms and/or molecules of the precursor(s). The plasma source ought to be so disposed, and is also to be operated in such a way, that there is no direct influence of the plasma on the substrate surface and on the precursors that lead to layer formation.
摘要翻译：本发明涉及一种装置和用于形成在衬底表面上的薄膜的方法。发明内容本发明提供一种具有该薄层可以在其上具有所需性能的特定层形成材料的衬底表面来生产可用的选项的一个目的。本发明的装置被设计成使得在衬底之上的反应室部分被涂布于至少一种气态前体的进料的表面存在，这有助于膜的形成。此外，电磁辐射发射源，这是一种等离子体源被布置成使得所述发射的电磁辐射是的原子和/或分子的光解活化/前体（S）。等离子体源应被布置在这样的和应当操作，使得在衬底表面上等离子体和领先的到成膜前体没有直接影响发生。

3. 发明专利

DE102006042328A1 未知
公开(公告)号：DE102006042328A1
公开(公告)日：2008-03-20
申请号：DE102006042328
申请日：2006-09-01
申请人： FRAUNHOFER GES FORSCHUNG
发明人： DRESLER BIRTE , HOPFE VOLKMAR , DANI INES
IPC分类号： C23C16/48 , C23C16/52
摘要： The invention relates to an apparatus and to a method of forming thin films on substrate surfaces. It is the object of the invention to provide possibilities with which thin layers can be manufactured on substrate surfaces which have a specific layer material formation with desired properties. The apparatus in accordance with the invention is made such that a feed is present for at least one gaseous precursor, which contributes to the layer formation, at a reaction chamber region above a substrate surface to be coated. A source which is a plasma source and which emits electromagnetic radiation is moreover arranged such that a photolytic activation of atoms and/or molecules of the precursor(s) takes place with the emitted electromagnetic radiation. In this respect, the plasma source should be arranged and should also be operated such that no direct influence of the plasma on the substrate surface and on the precursors resulting in the layer formation takes place.

4. 发明专利

DE102006042327A1 未知
公开(公告)号：DE102006042327A1
公开(公告)日：2008-03-20
申请号：DE102006042327
申请日：2006-09-01
申请人： FRAUNHOFER GES FORSCHUNG
发明人： DRESLER BIRTE , HOPFE VOLKMAR , DANI INES , ROSINA MILAN
IPC分类号： H01L21/318

5. 发明专利

DE102006042328B4 Verfahren zur Ausbildung dünner Schichten auf Substratoberflächen 未知
公开(公告)号：DE102006042328B4
公开(公告)日：2012-07-05
申请号：DE102006042328
申请日：2006-09-01
申请人： FRAUNHOFER GES FORSCHUNG
发明人： DRESLER BIRTE , HOPFE VOLKMAR , DANI INES
IPC分类号： C23C16/48 , C23C16/52
摘要： Verfahren zur Ausbildung dünner Schichten auf Substratoberflächen, bei dem mindestens ein gasförmigeäche in einen Reaktionskammerbereich zugeführt wird; im Reaktionskammerbereich (11) eine Plasmaquelle (2) so angeordnet und betrieben wird, dass die Ausbildung einer dünnen Schicht ausschließlich in Folge photolytischer Aktivierung von Atomen und/oder Molekülen des Precursors/der Precursoren durch von der Plasmaquelle (2) emittierte elektromagnetische Strahlung erreicht, dabei das Plasma den/die Precursor(en) und die Substratoberfläche nicht unmittelbar beeinflusst und dabei die Ausbildung der Schicht bei Atmosphärendruck durchgeführt wird; wobei ein Volumenstrom und ein Druck für zugeführtes Plasmagas gewählt werden, die für die Emission elektromagnetischer Strahlung ausreichen aber verhindert, dass Plasma in einen Bereich der Reaktionskammer (11) gelangt, in dem Precursor für die Ausbildung dünner Schichten vorhanden ist und die elektromagnetische Strahlung unter Verzicht auf ein dazwischen angeordnetes Fenster emittiert wird.

6. 发明专利

DE102006042327B4 未知
公开(公告)号：DE102006042327B4
公开(公告)日：2009-10-22
申请号：DE102006042327
申请日：2006-09-01
申请人： FRAUNHOFER GES FORSCHUNG
发明人： DRESLER BIRTE , HOPFE VOLKMAR , DANI INES , ROSINA MILAN
IPC分类号： H01L21/318 , C23C16/34 , C23C16/48 , C23C16/54

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