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    • 2. 发明申请
    • Integrateable capacitors and microcoils and methods of making thereof
    • 可集成电容器和微型线圈及其制造方法
    • US20070148895A1
    • 2007-06-28
    • US11319075
    • 2005-12-28
    • Koenraad Van SchuylenberghEugene ChowJengPing Lu
    • Koenraad Van SchuylenberghEugene ChowJengPing Lu
    • H01L21/00
    • H01G5/18H01F17/0006H01F17/02H01F21/04H01F27/40H01F41/041H01L28/10H01L28/40
    • Methods for integrally forming high Q tunable capacitors and high Q inductors on a substrate are described. A method for integrally forming a capacitor and a microcoil on a substrate may involve depositing and patterning a dielectric layer on the substrate, depositing and patterning a sacrificial layer on the substrate, depositing and patterning conductive material on the semiconductor substrate, depositing and patterning a polymer layer on the semiconductor substrate, removing an exposed portion of the conductive material exposed by the patterned polymer layer to release a portion of the conductive pattern from the semiconductor substrate to form out-of-plane windings of the microcoil, depositing second conductive material on exposed portions of the conductive material, and removing the sacrificial layer. The patterned conductive material may include a windings portion of the microcoil, an overlapping electrode portion of the capacitor and a support portion for the electrode of the capacitor.
    • 描述了在衬底上整体形成高Q可调谐电容器和高Q电感器的方法。 用于在基板上一体地形成电容器和微线圈的方法可以包括在基板上沉积和图案化电介质层,在衬底上沉积和图案化牺牲层,在半导体衬底上沉积和图案化导电材料,沉积和图案化聚合物 去除由所述图案化聚合物层暴露的所述导电材料的暴露部分,以从所述半导体衬底释放所述导电图案的一部分,以形成所述微线圈的面外绕组,将第二导电材料沉积在暴露的 部分导电材料,并去除牺牲层。 图案化导电材料可以包括微线圈的绕组部分,电容器的重叠电极部分和用于电容器电极的支撑部分。
    • 6. 发明授权
    • Systems and methods for biasing high fill-factor sensor arrays and the like
    • 用于偏置高填充因子传感器阵列等的系统和方法
    • US07863703B2
    • 2011-01-04
    • US12379581
    • 2009-02-25
    • JengPing LuJames B. BoyceKathleen Dore Boyce, legal representative
    • JengPing LuJames B. Boyce
    • H01L29/868H01L31/105
    • H01L27/1446H01L31/105
    • A high fill-factor photosensor array is formed comprising a P-layer, an I-layer, one or more semiconductor structures adjacent to the I-layer and each coupled to a N-layer, an electrically conductive electrode formed on top of the P-layer, and an additional semiconductor structure, adjacent to the N-layer and which is electrically connected to a voltage bias source. The bias voltage applied to the additional semiconductor structure charges the additional semiconductor structure, thereby creating a tunneling effect between the N-layer and the P-layer, wherein electrons leave the N-layer and reach the P-layer and the electrically conductive layer. The electrons then migrate and distribute uniformly throughout the electrically conductive layer, which ensures a uniform bias voltage across to the entire photosensor array. The biasing scheme in this invention allows to achieve mass production of photosensors without the use of wire bonding.
    • 形成高填充因子光电传感器阵列,其包括P层,I层,与I层相邻并且各自耦合到N层的一个或多个半导体结构,形成在P的顶部上的导电电极 以及与N层相邻并且与电压偏置源电连接的附加半导体结构。 施加到附加半导体结构的偏置电压对附加的半导体结构进行充电,从而在N层和P层之间产生隧穿效应,其中电子离开N层并到达P层和导电层。 电子然后在整个导电层中均匀迁移和均匀分布,这确保跨越整个光电传感器阵列的均匀偏压。 本发明的偏置方案允许在不使用引线接合的情况下实现光电传感器的批量生产。
    • 7. 发明申请
    • Systems and methods for biasing high fill-factor sensor arrays and the like
    • 用于偏置高填充因子传感器阵列等的系统和方法
    • US20090160006A1
    • 2009-06-25
    • US12379581
    • 2009-02-25
    • JengPing LuJames B. BoyceKathleen Dore Boyce
    • JengPing LuJames B. BoyceKathleen Dore Boyce
    • H01L31/105H03K3/01
    • H01L27/1446H01L31/105
    • A high fill-factor photosensor array is formed comprising a P-layer, an I-layer, one or more semiconductor structures adjacent to the I-layer and each coupled to a N-layer, an electrically conductive electrode formed on top of the P-layer, and an additional semiconductor structure, adjacent to the N-layer and which is electrically connected to a voltage bias source. The bias voltage applied to the additional semiconductor structure charges the additional semiconductor structure, thereby creating a tunneling effect between the N-layer and the P-layer, wherein electrons leave the N-layer and reach the P-layer and the electrically conductive layer. The electrons then migrate and distribute uniformly throughout the electrically conductive layer, which ensures a uniform bias voltage across to the entire photosensor array. The biasing scheme in this invention allows to achieve mass production of photosensors without the use of wire bonding.
    • 形成高填充因子光电传感器阵列,其包括P层,I层,与I层相邻并且各自耦合到N层的一个或多个半导体结构,形成在P的顶部上的导电电极 以及与N层相邻并且与电压偏置源电连接的附加半导体结构。 施加到附加半导体结构的偏置电压对附加的半导体结构进行充电,从而在N层和P层之间产生隧穿效应,其中电子离开N层并到达P层和导电层。 电子然后在整个导电层中均匀迁移和均匀分布,这确保跨越整个光电传感器阵列的均匀偏压。 本发明的偏置方案允许在不使用引线接合的情况下实现光电传感器的批量生产。