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1. 发明授权

US07863703B2 Systems and methods for biasing high fill-factor sensor arrays and the like 有权
标题翻译：用于偏置高填充因子传感器阵列等的系统和方法
公开(公告)号：US07863703B2
公开(公告)日：2011-01-04
申请号：US12379581
申请日：2009-02-25
申请人： JengPing Lu , James B. Boyce , Kathleen Dore Boyce, legal representative
发明人： JengPing Lu , James B. Boyce
IPC分类号： H01L29/868 , H01L31/105
CPC分类号： H01L27/1446 , H01L31/105
摘要： A high fill-factor photosensor array is formed comprising a P-layer, an I-layer, one or more semiconductor structures adjacent to the I-layer and each coupled to a N-layer, an electrically conductive electrode formed on top of the P-layer, and an additional semiconductor structure, adjacent to the N-layer and which is electrically connected to a voltage bias source. The bias voltage applied to the additional semiconductor structure charges the additional semiconductor structure, thereby creating a tunneling effect between the N-layer and the P-layer, wherein electrons leave the N-layer and reach the P-layer and the electrically conductive layer. The electrons then migrate and distribute uniformly throughout the electrically conductive layer, which ensures a uniform bias voltage across to the entire photosensor array. The biasing scheme in this invention allows to achieve mass production of photosensors without the use of wire bonding.
摘要翻译：形成高填充因子光电传感器阵列，其包括P层，I层，与I层相邻并且各自耦合到N层的一个或多个半导体结构，形成在P的顶部上的导电电极以及与N层相邻并且与电压偏置源电连接的附加半导体结构。施加到附加半导体结构的偏置电压对附加的半导体结构进行充电，从而在N层和P层之间产生隧穿效应，其中电子离开N层并到达P层和导电层。电子然后在整个导电层中均匀迁移和均匀分布，这确保跨越整个光电传感器阵列的均匀偏压。本发明的偏置方案允许在不使用引线接合的情况下实现光电传感器的批量生产。

2. 发明授权

US07863704B2 Systems and methods for biasing high fill-factor sensor arrays and the like 有权
公开(公告)号：US07863704B2
公开(公告)日：2011-01-04
申请号：US12392943
申请日：2009-02-25
申请人： JengPing Lu , James B. Boyce , Kathleen Dore Boyce, legal representative
发明人： JengPing Lu , James B. Boyce
IPC分类号： H01L29/868 , H01L31/105
CPC分类号： H01L27/1446 , H01L31/105
摘要： A high fill-factor photosensor array is formed comprising a P-layer, an I-layer, one or more semiconductor structures adjacent to the I-layer and each coupled to a N-layer, an electrically conductive electrode formed on top of the P-layer, and an additional semiconductor structure, adjacent to the N-layer and which is electrically connected to a voltage bias source. The bias voltage applied to the additional semiconductor structure charges the additional semiconductor structure, thereby creating a tunneling effect between the N-layer and the P-layer, wherein electrons leave the N-layer and reach the P-layer and the electrically conductive layer. The electrons then migrate and distribute uniformly throughout the electrically conductive layer, which ensures a uniform bias voltage across to the entire photosensor array. The biasing scheme in this invention allows to achieve mass production of photosensors without the use of wire bonding.

3. 发明授权

US07710371B2 Variable volume between flexible structure and support surface 失效
标题翻译：柔性结构和支撑表面之间的可变体积
公开(公告)号：US07710371B2
公开(公告)日：2010-05-04
申请号：US11014490
申请日：2004-12-16
申请人： Ping Mei , Jurgen Daniel , James B. Boyce , Kathleen Dore Boyce, legal representative , Jackson Ho , Rachel Lau , Yu Wang
发明人： Ping Mei , Jurgen Daniel , James B. Boyce , Jackson Ho , Rachel Lau , Yu Wang
IPC分类号： G09G3/34 , C25B9/00 , F04B17/00 , B41J2/14 , G02F1/153 , H04R19/00
CPC分类号： C25D5/02 , C23C18/28 , C25D5/56 , H04R19/04
摘要： Cells can include variable volumes defined between a flexible structure, such as a polymer layer, and a support surface, with the flexible structure and support surface being attached in a first region that surrounds a second region in which they are unattached. Various adhesion structures can attach the flexible structure and the support surface. When unstretched, the flexible structure can lie in a flat position on the support surface. In response to a stretching force away from the support surface, the flexible structure can move out of the flat position, providing the variable volume. Electrodes, such as on the flexible structure, on the support surface, and over the flexible structure, can have charge levels that couple with each other and with the variable volume. A support structure can include a device layer with signal circuitry that provides a signal path between an electrode and external circuitry. One or more ducts can provide fluid communication with each cell's variable volume. Arrays of such cells can be implemented for various applications, such as optical modulators, displays, printheads, and microphones.
摘要翻译：细胞可以包括在诸如聚合物层的柔性结构和支撑表面之间限定的可变体积，其中柔性结构和支撑表面附接在围绕其未连接的第二区域的第一区域中。各种粘合结构可以附接柔性结构和支撑表面。当未拉伸时，柔性结构可以位于支撑表面上的平坦位置。响应于远离支撑表面的拉伸力，柔性结构可以移出平坦位置，从而提供可变的体积。诸如柔性结构的电极，在支撑表面上以及柔性结构上的电极可以具有彼此耦合并且具有可变体积的电荷水平。支撑结构可以包括具有提供电极和外部电路之间的信号路径的信号电路的器件层。一个或多个管道可以提供与每个电池的可变体积的流体连通。可以对诸如光学调制器，显示器，打印头和麦克风的各种应用来实现这种单元的阵列。

4. 发明申请

US20090160006A1 Systems and methods for biasing high fill-factor sensor arrays and the like 有权
标题翻译：用于偏置高填充因子传感器阵列等的系统和方法
公开(公告)号：US20090160006A1
公开(公告)日：2009-06-25
申请号：US12379581
申请日：2009-02-25
申请人： JengPing Lu , James B. Boyce , Kathleen Dore Boyce
发明人： JengPing Lu , James B. Boyce , Kathleen Dore Boyce
IPC分类号： H01L31/105 , H03K3/01
CPC分类号： H01L27/1446 , H01L31/105
摘要： A high fill-factor photosensor array is formed comprising a P-layer, an I-layer, one or more semiconductor structures adjacent to the I-layer and each coupled to a N-layer, an electrically conductive electrode formed on top of the P-layer, and an additional semiconductor structure, adjacent to the N-layer and which is electrically connected to a voltage bias source. The bias voltage applied to the additional semiconductor structure charges the additional semiconductor structure, thereby creating a tunneling effect between the N-layer and the P-layer, wherein electrons leave the N-layer and reach the P-layer and the electrically conductive layer. The electrons then migrate and distribute uniformly throughout the electrically conductive layer, which ensures a uniform bias voltage across to the entire photosensor array. The biasing scheme in this invention allows to achieve mass production of photosensors without the use of wire bonding.
摘要翻译：形成高填充因子光电传感器阵列，其包括P层，I层，与I层相邻并且各自耦合到N层的一个或多个半导体结构，形成在P的顶部上的导电电极以及与N层相邻并且与电压偏置源电连接的附加半导体结构。施加到附加半导体结构的偏置电压对附加的半导体结构进行充电，从而在N层和P层之间产生隧穿效应，其中电子离开N层并到达P层和导电层。电子然后在整个导电层中均匀迁移和均匀分布，这确保跨越整个光电传感器阵列的均匀偏压。本发明的偏置方案允许在不使用引线接合的情况下实现光电传感器的批量生产。

5. 发明申请

US20090160007A1 Systems and Methods for biasing high fill-factor sensor arrays and the like 有权
标题翻译：用于偏置高填充因子传感器阵列的系统和方法等
公开(公告)号：US20090160007A1
公开(公告)日：2009-06-25
申请号：US12392943
申请日：2009-02-25
申请人： JengPing Lu , James B. Boyce , Kathleen Dore Boyce
发明人： JengPing Lu , James B. Boyce , Kathleen Dore Boyce
IPC分类号： H01L31/105 , H01L27/144
CPC分类号： H01L27/1446 , H01L31/105
摘要： A high fill-factor photosensor array is formed comprising a P-layer, an I-layer, one or more semiconductor structures adjacent to the I-layer and each coupled to a N-layer, an electrically conductive electrode formed on top of the P-layer, and an additional semiconductor structure, adjacent to the N-layer and which is electrically connected to a voltage bias source. The bias voltage applied to the additional semiconductor structure charges the additional semiconductor structure, thereby creating a tunneling effect between the N-layer and the P-layer, wherein electrons leave the N-layer and reach the P-layer and the electrically conductive layer. The electrons then migrate and distribute uniformly throughout the electrically conductive layer, which ensures a uniform bias voltage across to the entire photosensor array. The biasing scheme in this invention allows to achieve mass production of photosensors without the use of wire bonding.
摘要翻译：形成高填充因子光电传感器阵列，其包括P层，I层，与I层相邻并且各自耦合到N层的一个或多个半导体结构，形成在P的顶部上的导电电极以及与N层相邻并且与电压偏置源电连接的附加半导体结构。施加到附加半导体结构的偏置电压对附加的半导体结构进行充电，从而在N层和P层之间产生隧穿效应，其中电子离开N层并到达P层和导电层。电子然后在整个导电层中均匀迁移和均匀分布，这确保跨越整个光电传感器阵列的均匀偏压。本发明的偏置方案允许在不使用引线接合的情况下实现光电传感器的批量生产。

6. 发明授权

US06710370B2 Image sensor with performance enhancing structures 有权
标题翻译：具有性能增强结构的图像传感器
公开(公告)号：US06710370B2
公开(公告)日：2004-03-23
申请号：US10042090
申请日：2002-01-07
申请人： Robert A. Street , James B. Boyce , John C. Knights
发明人： Robert A. Street , James B. Boyce , John C. Knights
IPC分类号： H01L2904
CPC分类号： H01L27/14632 , H01L27/1463 , H01L27/14643 , H01L27/14665
摘要： An image sensor is disclosed including passivation walls extending above the pixel contact pads into a photosensor layer (e.g., amorphous silicon) such that the pixel contact pads are isolated to reduce cross-talk. The passivation walls are formed from SiO2 or SiON to further reduce cross-talk. An embodiment includes metal structures provided under interface regions (e.g., under the passivation walls) separating adjacent pixels that are negatively biased to prevent cross-talk, and optionally extend under the contact pad to increase pixel capacitance. One embodiment omits p-type dopant from the lower amorphous silicon photodiode layer, and additional photodiode material layers are disclosed. Another disclosed sensor structure utilizes a textured surface to increase light absorption. A color filter structure for image sensors is also disclosed.
摘要翻译：公开了一种图像传感器，其包括在像素接触焊盘上方延伸到光电传感器层（例如，非晶硅）中的钝化壁，使得像素接触焊盘被隔离以减少串扰。钝化壁由SiO 2或SiON形成，以进一步减少串扰。一个实施例包括设置在界面区域（例如，钝化壁下方）的金属结构，所述界面区域分隔相邻像素，其被负偏压以防止串扰，并且可选地在接触焊盘下方延伸以增加像素电容。一个实施例省略了来自下部非晶硅光电二极管层的p型掺杂剂，并且公开了另外的光电二极管材料层。另一公开的传感器结构利用纹理表面来增加光吸收。还公开了一种用于图像传感器的滤色器结构。

7. 发明授权

US06288435B1 Continuous amorphous silicon layer sensors using doped poly-silicon back contact 有权
标题翻译：连续非晶硅层传感器采用掺杂多晶硅背接触
公开(公告)号：US06288435B1
公开(公告)日：2001-09-11
申请号：US09473578
申请日：1999-12-28
申请人： Ping Mei , Jeng Ping Lu , Francesco Lemmi , Robert A. Street , James B. Boyce
发明人： Ping Mei , Jeng Ping Lu , Francesco Lemmi , Robert A. Street , James B. Boyce
IPC分类号： H01L31075
CPC分类号： H01L27/14603 , H01L27/14665
摘要： A method and apparatus for reducing vertical leakage current in a high fill factor sensor array is described. Reduction of vertical leakage current is achieved by eliminating Schottky junction interfaces that occur between metal back contacts and intrinsic amorphous silicon layers. One method of eliminating the Schottky junction uses an extra wide region of N doped amorphous silicon to serve as a buffer between the metal back contact and the intrinsic amorphous silicon layer. Another method of eliminating the Schottky junction completely replaces the metal back contact and the N doped amorphous silicon layer with a substitute material such as N doped poly-silicon.
摘要翻译：描述了用于减少高填充因子传感器阵列中的垂直泄漏电流的方法和装置。通过消除在金属背接触和本征非晶硅层之间发生的肖特基结界面来实现垂直漏电流的减小。消除肖特基结的一种方法使用N掺杂非晶硅的超宽区域作为金属背接触和本征非晶硅层之间的缓冲区。消除肖特基结的另一种方法用诸如N掺杂多晶硅的替代材料完全替代金属背接触和N掺杂的非晶硅层。

8. 发明授权

US06252215B1 Hybrid sensor pixel architecture with gate line and drive line synchronization 失效
标题翻译：混合传感器像素结构，具有栅极线和驱动线同步
公开(公告)号：US06252215B1
公开(公告)日：2001-06-26
申请号：US09069053
申请日：1998-04-28
申请人： Ping Mei , Andrew J. Moore , Raj B. Apte , Steven E. Ready , Robert A. Street , James B. Boyce
发明人： Ping Mei , Andrew J. Moore , Raj B. Apte , Steven E. Ready , Robert A. Street , James B. Boyce
IPC分类号： H01J4014
CPC分类号： H01L27/14643 , H01L27/14609 , H04N5/3741
摘要： A pixel circuit construction for image sensing includes a photosensor, an amplifier, a selector switch and, and a reset switch. The amplifier may be a single polycrystalline silicon (channel) transistor for high gain. The selector switch may also be a single polycrystalline silicon (channel) transistor for high conductivity. The reset switch may a single amorphous crystalline silicon (channel) transistor for low leakage current. The photosensor and amplifier may be connected to a shared bias line or may be connected to separate bias and drive lines, respectively. The selector and reset switches may be connected to a shared data line or may be connected to separate data and reset lines, respectively. Laser crystallization and rehydrogenation techniques are well suited to obtaining devices described herein. Gate line and drive voltage line synchronization is provided.
摘要翻译：用于图像感测的像素电路结构包括光电传感器，放大器，选择器开关和复位开关。放大器可以是用于高增益的单个多晶硅（沟道）晶体管。选择器开关也可以是用于高导电性的单个多晶硅（沟道）晶体管。复位开关可以是用于低漏电流的单个非晶态硅（沟道）晶体管。光传感器和放大器可以连接到共享偏置线，或者可以分别连接到单独的偏置线和驱动线。选择器和复位开关可以连接到共享数据线，或者可以分别连接到单独的数据和复位线。激光结晶和再氢化技术非常适合于获得本文所述的装置。提供栅极线和驱动电压线同步。

9. 发明授权

US08058182B2 Surface micromachining process of MEMS ink jet drop ejectors on glass substrates 有权
标题翻译： MEMS喷墨滴管在玻璃基板上的表面微加工工艺
公开(公告)号：US08058182B2
公开(公告)日：2011-11-15
申请号：US12495827
申请日：2009-07-01
申请人： Chingwen Yeh , James B. Boyce , Kathleen Boyce, legal representative , Jingkuang Chen , Feixia Pan , Joel A. Kubby
发明人： Chingwen Yeh , James B. Boyce , Jingkuang Chen , Feixia Pan , Joel A. Kubby
IPC分类号： H01L21/469
CPC分类号： B81C1/00158 , Y10T29/42
摘要： Method and device for forming a membrane includes providing a glass substrate, and depositing a thin layer of chromium on the glass substrate. The thin layer of chromium is patterned to form a deflection electrode and interconnect leads. A sacrificial layer of aluminum is deposited on top of the patterned chromium layer, then the sacrificial layer is patterned to define anchor regions. On top of the sacrificial layer, a thick layer of chromium is deposited, and the thick layer of chromium is patterned to form a membrane. The sacrificial layer is then etched to release the membrane.
摘要翻译：用于形成膜的方法和装置包括提供玻璃基板，以及在玻璃基板上沉积薄层的铬。图案化薄层的铬以形成偏转电极和互连引线。在图案化的铬层的顶部上沉积铝的牺牲层，然后将牺牲层图案化以限定锚定区域。在牺牲层的顶部，沉积厚厚的铬层，并且将厚的铬层图案化以形成膜。然后蚀刻牺牲层以释放膜。

10. 发明授权

US06300648B1 Continuous amorphous silicon layer sensors using sealed metal back contact 有权
标题翻译：连续非晶硅层传感器采用密封金属背接触
公开(公告)号：US06300648B1
公开(公告)日：2001-10-09
申请号：US09473579
申请日：1999-12-28
申请人： Ping Mei , Jeng Ping Lu , Francesco Lemmi , Robert A. Street , James B. Boyce
发明人： Ping Mei , Jeng Ping Lu , Francesco Lemmi , Robert A. Street , James B. Boyce
IPC分类号： H01L2904
CPC分类号： H01L29/458 , H01L29/78609 , H01L31/1055
摘要： A method and apparatus for reducing vertical leakage current in a high fill factor sensor array is described. Reduction of vertical leakage current is achieved by eliminating Schottky junction interfaces that occur between metal back contacts and intrinsic amorphous silicon layers. One method of eliminating the Schottky junction uses an extra wide region of N doped amorphous silicon to serve as a buffer between the metal back contact and the intrinsic amorphous silicon layer. Another method of eliminating the Schottky junction completely replaces the metal back contact and the N doped amorphous silicon layer with a substitute material such as N doped poly-silicon.
摘要翻译：描述了用于减少高填充因子传感器阵列中的垂直泄漏电流的方法和装置。通过消除在金属背接触和本征非晶硅层之间发生的肖特基结界面来实现垂直漏电流的减小。消除肖特基结的一种方法使用N掺杂非晶硅的超宽区域作为金属背接触和本征非晶硅层之间的缓冲区。消除肖特基结的另一种方法用诸如N掺杂多晶硅的替代材料完全替代金属背接触和N掺杂非晶硅层。

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