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1. 发明申请

US20060030064A1 Method and apparatus for addressing thickness variations of a trench floor formed in a semiconductor substrate 有权
标题翻译：用于解决在半导体衬底中形成的沟槽底板的厚度变化的方法和装置
公开(公告)号：US20060030064A1
公开(公告)日：2006-02-09
申请号：US11031423
申请日：2005-01-07
申请人： Erwan Roy , Patricia Coupanec , Theodore Lundquist , William Thompson , Mark Thompson , Lokesh Johri
发明人： Erwan Roy , Patricia Coupanec , Theodore Lundquist , William Thompson , Mark Thompson , Lokesh Johri
IPC分类号： H01L21/00
CPC分类号： H01L22/12
摘要： A method for utilizing interference fringe patterns generated when milling a trench through a semiconductor substrate by a method such as FIB milling, to determine and optimize the thickness uniformity of the trench bottom. The interference fringes may be mapped and the mapping used to direct the FIB milling to those regions which are thicker to correct observed non-uniformities in the trench floor thickness by varying the pixel dwell time across the milled area. The interference fringe mapping may be used to develop computerized contour lines to automate the pixel dwell time variations as described above, for correcting non-uniformities in the trench floor thickness. The method may be applied to applications other than trench formation for backside editing, such as monitoring progress in forming a milled object.
摘要翻译：一种利用通过诸如FIB铣削的方法在通过半导体衬底铣削沟槽时产生的干涉条纹图案的方法，以确定和优化沟槽底部的厚度均匀性。可以映射干涉条纹，并且映射用于将FIB铣削引导到那些较厚的区域，以通过改变铣削区域上的像素停留时间来修正沟槽底板厚度中观察到的不均匀性。如上所述，干涉条纹映射可用于开发计算机化轮廓线以自动化像素驻留时间变化，以校正沟槽底板厚度中的不均匀性。该方法可以应用于除了用于背面编辑的沟槽形成之外的应用，例如监测形成铣削对象的进展情况。

2. 发明申请

US20060261043A1 Apparatus and method for circuit operation definition 有权
公开(公告)号：US20060261043A1
公开(公告)日：2006-11-23
申请号：US11363787
申请日：2006-02-27
申请人： Martin Betz , Lokesh Johri , Rajesh Jain , Theodore Lundquist , Tamal Basu , Saurabh Gupta , Jagadish Narayana Gade
发明人： Martin Betz , Lokesh Johri , Rajesh Jain , Theodore Lundquist , Tamal Basu , Saurabh Gupta , Jagadish Narayana Gade
IPC分类号： H01H33/14
CPC分类号： G06F17/5068
摘要： A method and apparatus for defining a circuit operation, such as a charged particle beam operation to perform a circuit edit and define a probe point. Circuit operation definition is performed in a front-end environment with access to integrated circuit computer aided design tools providing logic level and layout level information concerning the integrated circuit. The front-end environment incorporates circuit operation optimization methods to identify optimal locations for a circuit operation. A back-end environment, such as a charged particle tool computing platform, is adapted to receive one or more files, which may include a truncated layout file with circuit operation location information, for use in further defining a circuit operation and/or performing the circuit operation.

3. 发明申请

US20060188797A1 Apparatus and method for optical interference fringe based integrated circuit processing 有权
标题翻译：用于光干涉条纹集成电路处理的装置和方法
公开(公告)号：US20060188797A1
公开(公告)日：2006-08-24
申请号：US11362240
申请日：2006-02-24
申请人： Erwan Roy , Chun-Cheng Tsao , Theodore Lundquist
发明人： Erwan Roy , Chun-Cheng Tsao , Theodore Lundquist
IPC分类号： G03C5/00 , A61N5/00 , G21G5/00
CPC分类号： H01J37/3174 , B23K26/03 , B23K26/032 , B82Y10/00 , B82Y40/00
摘要： An apparatus and method for processing an integrated circuit employing optical interference fringes. During processing, light is directed on the integrated circuit and based upon the detection of interference fringes, further processing may be controlled. One implementation involves charged particle beam processing of an integrated circuit as function of detection of interference fringes. A charged particle beam trench milling operation is performed in or on the substrate of an integrated circuit. Light is directed on the floor of the trench. When the floor approaches the underlying circuit structures, some light is reflected from the floor of the trench and some light penetrates the substrate and is reflected off the underlying circuit structures. Interference fringes may be formed from the constructive or destructive interference between the light reflected from the floor and the light from the circuit structures. Processing may be controlled as function of the detection of interference fringes.
摘要翻译：一种使用光学干涉条纹处理集成电路的装置和方法。在处理期间，光被引导到集成电路上，并且基于干涉条纹的检测，可以控制进一步的处理。一种实施方案涉及集成电路的带电粒子束处理作为干涉条纹检测的功能。在集成电路的衬底中或其上执行带电粒子束沟槽铣削操作。光照在沟槽的地板上。当地板接近下面的电路结构时，一些光从沟槽的底部反射，并且一些光穿透衬底并从下面的电路结构反射。干涉条纹可以由从地板反射的光与来自电路结构的光之间的建构性或破坏性干扰形成。作为检测干涉条纹的功能，可以控制处理。

4. 发明申请

US20050044519A1 Sub-resolution alignment of images 有权
公开(公告)号：US20050044519A1
公开(公告)日：2005-02-24
申请号：US10946667
申请日：2004-09-21
申请人： Madhumita Sengupta , Mamta Slnha , Theodore Lundquist , William Thompson
发明人： Madhumita Sengupta , Mamta Slnha , Theodore Lundquist , William Thompson
IPC分类号： G06F9/455 , G06F17/50 , G06T7/00
CPC分类号： G06K9/32 , G06T7/001 , G06T7/32 , G06T2207/30148
摘要： A plurality of images, including a first image and a second image having a higher resolution than the first image, are aligned by generating an oversampled cross correlation image that corresponds to relative displacements of the first and second images, and, based on the oversampled cross correlation image, determining an offset value that corresponds to a misalignment of the first and second images. The first and second images are aligned to a precision greater than the resolution of the first image, based on the determined offset value. Enhanced results are achieved by performing another iteration of generating an oversampled cross correlation image and determining an offset value for the first and second images. Generating the oversampled cross correlation image may involve generating a cross correlation image that corresponds to relative displacements of the first and second images, and oversampling the cross correlation image to generate the oversampled cross correlation image.

5. 发明申请

US20060219949A1 FIB MILLING OF COPPER OVER ORGANIC DIELECTRICS 审中-公开
公开(公告)号：US20060219949A1
公开(公告)日：2006-10-05
申请号：US11423624
申请日：2006-06-12
申请人： Vladimir Makarov , Theodore Lundquist
发明人： Vladimir Makarov , Theodore Lundquist
IPC分类号： A61N5/00
CPC分类号： C23F4/00 , H01J37/3053 , H01J2237/3114 , H01J2237/31744 , H01L21/32131
摘要： Apparatus and processes are disclosed for milling copper adjacent to organic low-k dielectric on a substrate by directing a charged-particle beam at a portion of the copper and exposing the copper to a precursor sufficient to enhance removal of the copper relative to removal of the dielectric, wherein the precursor contains an oxidizing agent, has a high sticking coefficient and a long residence time on the copper, contains atoms of at least one of carbon and silicon in amount sufficient to stop oxidation of the dielectric, and contains no atoms of chlorine, bromine or iodine. In one embodiment, the precursor comprises at least one of the group consisting of NitroEthanol, NitroEthane, NitroPropane, NitroMethane, compounds based on silazane such as HexaMethylCycloTriSilazane, and compounds based on siloxane such as Octa-Methyl-Cyclo-Tetra-Siloxane. Products of the processes are also disclosed.

6. 发明申请

US20060006329A1 Charged particle guide 有权
标题翻译：带电粒子引导
公开(公告)号：US20060006329A1
公开(公告)日：2006-01-12
申请号：US10887800
申请日：2004-07-09
申请人： Qinsong Wang , Tzong Miau , Theodore Lundquist
发明人： Qinsong Wang , Tzong Miau , Theodore Lundquist
IPC分类号： H01J37/28 , H01J37/244
CPC分类号： H01J37/3005 , H01J37/244 , H01J2237/2448
摘要： A charged particle guide adapted to be coupled with a charged particle detector, such as a secondary electron detector. The charged particle guide, in one example, comprising two wires extending from the charged particle detector toward a source of charged particles, such as secondary electrons emitted from an IC upon application of a focused ion beam. Upon application of a bias voltage, the charged particle guide introduces a collecting electric field that attracts charged particles and directs the charged particles to the charged particles detector.
摘要翻译：适于与带电粒子检测器（例如二次电子检测器）耦合的带电粒子引导件。在一个示例中，带电粒子引导件包括从带电粒子检测器朝向带电粒子源延伸的两条线，例如在施加聚焦离子束时从IC发射的二次电子。在施加偏置电压时，带电粒子引导件引入吸收带电粒子并将带电粒子引导到带电粒子检测器的收集电场。

7. 发明申请

US20070293052A1 APPARATUS AND METHOD FOR OPTICAL INTERFERENCE FRINGE BASED INTEGRATED CIRCUIT PROCESSING 有权
标题翻译：基于光干扰法的基于集成电路处理的装置和方法
公开(公告)号：US20070293052A1
公开(公告)日：2007-12-20
申请号：US11754466
申请日：2007-05-29
申请人： Erwan Le Roy , Chun-Cheng Tsao , Theodore Lundquist , Rajesh Jain
发明人： Erwan Le Roy , Chun-Cheng Tsao , Theodore Lundquist , Rajesh Jain
IPC分类号： H01L21/302
CPC分类号： H01L21/3065 , H01J37/228 , H01J37/3056 , H01J2237/2482 , H01J2237/30466 , H01J2237/31749 , H01L22/12 , H01L22/26
摘要： An apparatus and method for processing an integrated circuit employing optical interference fringes. During processing, one or more wavelength lights are directed on the integrated circuit and based upon the detection of interference fringes and characteristics of the same, further processing may be controlled. One implementation involves charged particle beam processing of an integrated circuit as function of detection and/or characteristics of interference fringes. A charged particle beam trench milling operation is performed in or on the substrate of an integrated circuit. Light is directed on the floor of the trench. Interference fringes may be formed from the constructive or destructive interference between the light reflected from the floor and the light from the circuit structures. Resulting fringes will be a function, in part, of the thickness and/or profile of the trench floor. Milling may be controlled as a function of the detected fringe patterns.
摘要翻译：一种使用光学干涉条纹处理集成电路的装置和方法。在处理期间，一个或多个波长的光被引导到集成电路上，并且基于干涉条纹和其特性的检测，可以控制进一步的处理。一种实施方案涉及集成电路的带电粒子束处理，作为干涉条纹的检测和/或特征的函数。在集成电路的衬底中或其上执行带电粒子束沟槽铣削操作。光线指向沟槽的地板。干涉条纹可以由从地板反射的光与来自电路结构的光之间的建构性或破坏性干扰形成。所产生的条纹将部分地是沟槽地板的厚度和/或轮廓的函数。作为检测到的条纹图案的函数可以控制铣削。

8. 发明申请

US20050231219A1 Apparatus and method for detecting photon emissions from transistors 有权
公开(公告)号：US20050231219A1
公开(公告)日：2005-10-20
申请号：US11070968
申请日：2005-03-02
申请人： Romain Desplats , Philippe Perdu , Ketan Shah , Theodore Lundquist
发明人： Romain Desplats , Philippe Perdu , Ketan Shah , Theodore Lundquist
IPC分类号： G01R31/26 , G01R31/28 , G01R31/302 , G01R31/311
CPC分类号： G01R31/311 , G01R31/2621 , G01R31/2846
摘要： A system, apparatus, and method for analyzing photon emission data to discriminate between photons emitted by transistors and photons emitted by background sources. The analysis involves spatial and/or temporal correlation of photon emissions. After correlation, the analysis may further involve obtaining a likelihood that the correlated photons were emitted by a transistor. After correlation, the analysis may also further involve assigning a weight to individual photon emissions as a function of the correlation. The weight, in some instances, reflecting a likelihood that the photons were emitted by a transistor. The analysis may further involve automatically identifying transistors in a photon emission image.

9. 发明授权

US07135123B1 Method and system for integrated circuit backside navigation 失效
标题翻译：集成电路背面导航的方法和系统
公开(公告)号：US07135123B1
公开(公告)日：2006-11-14
申请号：US10758146
申请日：2004-01-14
申请人： Mark Alan Thompson , Erwan Le Roy , Theodore Lundquist , William B. Thompson , Catherine Kardach
发明人： Mark Alan Thompson , Erwan Le Roy , Theodore Lundquist , William B. Thompson , Catherine Kardach
IPC分类号： G01L21/30 , H01L21/00
CPC分类号： G01R31/2898 , G01R31/307 , H01L21/3043 , H01L23/544 , H01L2924/0002 , H01L2924/00
摘要： The backside navigation method of the present invention includes milling a fiducial opening through the substrate of an integrated circuit. The milling process is stopped when the fiducial opening reaches the bottom of a trench isolation structure. The trench isolation structure delineated by the fiducial opening may be imaged and registered to a computer aided design layout image to achieve sub-micron navigation resolution.
摘要翻译：本发明的背面导航方法包括通过集成电路的基板铣削基准开口。当基准开口到达沟槽隔离结构的底部时，铣削过程停止。由基准开口划定的沟槽隔离结构可以被成像并记录到计算机辅助设计布局图像中以实现亚微米导航分辨率。

10. 发明申请

US20050072756A1 FIB milling of copper over organic dielectrics 有权
标题翻译： FIB在有机电介质上铣削铜
公开(公告)号：US20050072756A1
公开(公告)日：2005-04-07
申请号：US10678438
申请日：2003-10-03
申请人： Vladimir Makarov , Theodore Lundquist
发明人： Vladimir Makarov , Theodore Lundquist
IPC分类号： C23F4/00 , H01J37/305 , H01L21/3213 , C23F1/00 , B44C1/22 , C03C15/00 , C03C25/68
CPC分类号： C23F4/00 , H01J37/3053 , H01J2237/3114 , H01J2237/31744 , H01L21/32131
摘要： Apparatus and processes are disclosed for milling copper adjacent to organic low-k dielectric on a substrate by directing a charged-particle beam at a portion of the copper and exposing the copper to a precursor sufficient to enhance removal of the copper relative to removal of the dielectric, wherein the precursor contains an oxidizing agent, has a high sticking coefficient and a long residence time on the copper, contains atoms of at least one of carbon and silicon in amount sufficient to stop oxidation of the dielectric, and contains no atoms of chlorine, bromine or iodine. In one embodiment, the precursor comprises at least one of the group consisting of NitroEthanol, NitroEthane, NitroPropane, NitroMethane, compounds based on silazane such as HexaMethylCycloTriSilazane, and compounds based on siloxane such as Octa-Methyl-Cyclo-Tetra-Siloxane. Products of the processes are also disclosed.
摘要翻译：公开了用于通过在铜的一部分处引导带电粒子束并将铜暴露于足以增强铜相对于去除铜的前体的前体来研磨邻近有机低k电介质的铜的装置和方法电介质，其中所述前体含有氧化剂，在铜上具有高粘附系数和长停留时间，含有足以阻止电介质氧化的碳和硅中的至少一种的原子，并且不含有氯原子，溴或碘。在一个实施方案中，前体包括由硝基乙醇，硝基乙烷，硝基丙烷，硝基甲烷，基于硅氮烷的化合物如六甲基环己基硅氮烷和基于硅氧烷的化合物如八甲基 - 环四硅氧烷组成的组中的至少一种。还公开了该方法的产品。

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