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1. 发明授权

US06534775B1 Electrostatic trap for particles entrained in an ion beam 失效
标题翻译：用于夹带在离子束中的颗粒的静电捕集器
公开(公告)号：US06534775B1
公开(公告)日：2003-03-18
申请号：US09654380
申请日：2000-09-01
申请人： Eric R. Harrington , Victor M. Benveniste , Michael A. Graf , Robert D. Rathmell
发明人： Eric R. Harrington , Victor M. Benveniste , Michael A. Graf , Robert D. Rathmell
IPC分类号： H01J3730
CPC分类号： H01J37/3171 , H01J3/40 , H01J37/026 , H01J37/3002 , H01J2237/004 , H01J2237/022 , H01J2237/31705
摘要： A system for inhibiting the transport of contaminant particles with an ion beam includes a pair of electrodes that provide opposite electric fields through which the ion beam travels. A particle entrained in the ion beam is charged to a polarity matching the polarity of ion beam when traveling through a first of the electric fields. The downstream electrode provides another electric field for repelling the positively charged particle away from the direction of beam travel.
摘要翻译：用于抑制用离子束输送污染物颗粒的系统包括一对电极，其提供相反的电场，离子束通过该电场传播。夹带在离子束中的颗粒在穿过第一电场时被充电到与离子束的极性相匹配的极性。下游电极提供另一个电场，用于驱除带正电的粒子远离光束移动的方向。

2. 发明授权

US06476399B1 System and method for removing contaminant particles relative to an ion beam 有权
标题翻译：相对于离子束去除污染物颗粒的系统和方法
公开(公告)号：US06476399B1
公开(公告)日：2002-11-05
申请号：US09654379
申请日：2000-09-01
申请人： Eric R. Harrington , Victor M. Benveniste , Michael A. Graf , Robert D. Rathmell
发明人： Eric R. Harrington , Victor M. Benveniste , Michael A. Graf , Robert D. Rathmell
IPC分类号： H01J3730
CPC分类号： H01J37/026 , H01J37/3002 , H01J37/3171 , H01J2237/004 , H01J2237/022 , H01J2237/31705
摘要： A system for inhibiting the transport of contaminant particles with an ion beam includes a particle charging system for charging particles within a region through which the ion beam travels. An electric field is generated downstream relative to the charged region so as to urge charged particles away from a direction of travel for the ion beam.
摘要翻译：用于抑制用离子束输送污染物颗粒的系统包括用于在离子束行进的区域内填充颗粒的颗粒装料系统。在相对于带电区域的下游产生电场，以便使带电粒子远离离子束的行进方向。

3. 发明授权

US07598495B2 Methods and systems for trapping ion beam particles and focusing an ion beam 有权
标题翻译：用于捕获离子束粒子并聚焦离子束的方法和系统
公开(公告)号：US07598495B2
公开(公告)日：2009-10-06
申请号：US11739934
申请日：2007-04-25
申请人： Peter L. Kellerman , Victor M. Benveniste , Alexander S. Perel , Brian S. Freer , Michael A. Graf
发明人： Peter L. Kellerman , Victor M. Benveniste , Alexander S. Perel , Brian S. Freer , Michael A. Graf
IPC分类号： H01J3/18
CPC分类号： H01J37/3171 , H01J37/12 , H01J2237/022 , H01J2237/049
摘要： A focusing particle trap system for ion implantation comprising an ion beam source that generates an ion beam, a beam line assembly that receives the ion beam from the ion beam source comprising a mass analyzer that selectively passes selected ions, a focusing electrostatic particle trap that receives the ion beam and removes particles from the ion beam comprising an entrance electrode comprising an entrance aperture and biased to a first base voltage, wherein the first surface of the entrance electrode is facing away from a center electrode and is approximately flat, wherein the second surface of the entrance electrode is facing toward the center electrode and is concave, wherein the center electrode is positioned a distance downstream from the entrance electrode comprising a center aperture and biased to a center voltage, wherein the center voltage is less than the first base voltage, wherein the first surface of the center electrode is facing toward the entrance electrode and is convex, wherein the second surface of the center electrode is facing away from the entrance electrode and is approximately flat, an exit electrode positioned a distance downstream from the center electrode comprising an exit aperture and biased to a second base voltage, and wherein the first surface of the exit electrode is facing toward the center electrode and is approximately flat, wherein the second surface of the exit electrode is facing away from the center electrode and is approximately flat, wherein a first electrostatic field is generated from the entrance electrode toward the center electrode and a second electrostatic field is generated from the exit electrode toward the center electrode; wherein the second base voltage is greater than the center voltage, and an end station that is downstream from the beam line assembly and receives the ion beam.
摘要翻译：一种用于离子注入的聚焦粒子捕获系统，包括产生离子束的离子束源，接收来自离子束源的离子束的束线组件，该束束组件包括选择性地通过选定离子的质量分析器，接收离子束并且从离子束中除去包含入口电极并且被偏置到第一基极电压的入口电极的颗粒，其中入口电极的第一表面背离中心电极并且近似平坦，其中第二表面所述入口电极面向所述中心电极并且是凹形的，其中所述中心电极位于与所述入口电极的下游距离的位置，所述入口电极包括中心孔并被偏压到中心电压，其中所述中心电压小于所述第一基极电压，其中所述中心电极的所述第一表面面向所述入口电极并且被连接 vex，其中所述中心电极的所述第二表面背离所述入口电极并且近似平坦，所述出口电极在所述中心电极的下游距离包括出口孔并且被偏压到第二基极电压，并且其中所述第一表面所述出射电极的面向所述中心电极并且近似平坦，其中所述出射电极的所述第二表面背离所述中心电极并且近似平坦，其中从所述入射电极朝向所述中心电极产生第一静电场并且从出射电极向中心电极产生第二静电场; 其中所述第二基极电压大于所述中心电压，以及在所述束线组件的下游并接收所述离子束的端站。

4. 发明授权

US6135128A Method for in-process cleaning of an ion source 失效
标题翻译：离子源过程中清洗方法
公开(公告)号：US6135128A
公开(公告)日：2000-10-24
申请号：US49642
申请日：1998-03-27
申请人： Michael A. Graf , Victor M. Benveniste
发明人： Michael A. Graf , Victor M. Benveniste
IPC分类号： H01J27/02 , C23C14/48 , H01J27/04 , H01J37/08 , H01J37/317 , H01L21/265 , B08B3/12 , C23F1/02 , G01N21/01 , H01J27/00
CPC分类号： H01J37/3171 , H01J27/04 , H01J37/08 , H01J2237/022 , H01J2237/061
摘要： A method and system for in-process cleaning of an ion source (12) is provided. The ion source (12) comprises (i) a plasma chamber (22) formed by chamber walls (112, 114, 116) that bound an ionization zone (120); (ii) a source of ionizable dopant gas (66) and a first mechanism (68) for introducing said ionizable dopant gas into said plasma chamber; (iii) a source of cleaning gas (182) and a second mechanism (184) for introducing said cleaning gas into said plasma chamber; and (iv) an exciter (130) at least partially disposed within said chamber for imparting energy to said ionizable dopant gas and said cleaning gas to create a plasma within said plasma chamber. The plasma comprises disassociated and ionized constituents of said dopant gas and disassociated and ionized constituents of said cleaning gas. The disassociated and ionized constituents of said cleaning gas react with said disassociated and ionized constituents of said dopant gas to prevent formation of deposits of elements contained within said ionizable dopant gas on surfaces of said chamber walls. The cleaning gas may be, for example, nitrogen trifluoride (NF.sub.3), and the ionizable dopant gas may be, for example, either phosphine (PH.sub.3) or arsine (AsH.sub.3). Mass flow controllers control the ratio of cleaning gas to ionizable dopant gas introduced into said plasma chamber, which is greater than 0:1 and preferably at least 3:1.
摘要翻译：提供了一种用于在过程中清洁离子源（12）的方法和系统。离子源（12）包括（i）由结合电离区（120）的室壁（112,114,116）形成的等离子体室（22）; （ii）可电离掺杂剂气体源（66）和用于将所述可电离掺杂剂气体引入所述等离子体室的第一机构（68）（iii）用于将所述清洁气体引入所述等离子体室的清洁气体源（182）和第二机构（184）; 和（iv）至少部分地设置在所述腔室内的激励器（130），用于向所述可电离掺杂剂气体和所述清洁气体赋予能量以在所述等离子体腔室内产生等离子体。所述等离子体包括所述掺杂气体的分离和离子化成分以及所述清洁气体的解离和离子化成分。所述清洁气体的分离和离子化的组分与所述掺杂剂气体的所述分离和离子化的组分反应，以防止在所述室壁的表面上形成包含在所述可电离掺杂剂气体内的元素沉积物。清洁气体可以是例如三氟化氮（NF 3），并且可电离掺杂剂气体可以是例如磷化氢（PH 3）或胂（AsH 3）。质量流量控制器控制导入所述等离子体室的清洁气体与可离子化掺杂剂气体的比例大于0:1，优选至少3:1。

5. 发明授权

US07375355B2 Ribbon beam ion implanter cluster tool 有权
标题翻译：丝带束离子注入机群集工具
公开(公告)号：US07375355B2
公开(公告)日：2008-05-20
申请号：US11432977
申请日：2006-05-12
申请人： Joseph Ferrara , Patrick R. Splinter , Michael A. Graf , Victor M. Benveniste
发明人： Joseph Ferrara , Patrick R. Splinter , Michael A. Graf , Victor M. Benveniste
IPC分类号： H01J37/317
CPC分类号： H01J37/3171 , H01J37/16 , H01J2237/0822 , H01J2237/20 , H01J2237/244 , H01L21/26513 , H01L21/26566 , H01L21/67213
摘要： An ion implantation cluster tool for implanting ions into a workpiece is provided, wherein a plurality of beamline assemblies having a respective plurality of ion beamlines associated therewith are positioned about a common process chamber. Each of the plurality of ion beamline assemblies are selectively isolated from the common process chamber, and the plurality of beamline intersect at a processing region of the process chamber. A scanning apparatus positioned within the common process chamber is operable to selectively translate a workpiece holder in one or more directions through each of the plurality of ion beamlines within the processing region, and a common dosimetry apparatus within the common process chamber is operable to measure one or more properties of each of the plurality of ion beamlines. A load lock chamber is operably coupled to the common process chamber for exchange of workpieces between the common process chamber and an external environment.
摘要翻译：提供了用于将离子注入到工件中的离子注入簇工具，其中具有与其相关联的多个离子束线的多个束线组件围绕公共处理室定位。多个离子束线组件中的每一个与公共处理室选择性地隔离，并且多个束线在处理室的处理区域相交。定位在公共处理室内的扫描设备可操作以选择性地将工件保持器在一个或多个方向上通过处理区域内的多个离子束线中的每一个，并且公共处理室内的常见剂量测量装置可操作以测量一个或更多的多个离子束线中的每一个的性质。负载锁定室可操作地联接到公共处理室，用于在公共处理室和外部环境之间交换工件。

6. 发明授权

US08803110B2 Methods for beam current modulation by ion source parameter modulation 有权
标题翻译：离子源参数调制的束电流调制方法
公开(公告)号：US08803110B2
公开(公告)日：2014-08-12
申请号：US11541087
申请日：2006-09-29
申请人： Michael A. Graf , Edward C. Eisner , William F. DiVergilio , Daniel R. Tieger
发明人： Michael A. Graf , Edward C. Eisner , William F. DiVergilio , Daniel R. Tieger
IPC分类号： H01J37/317 , H01L21/265 , H01J37/32
CPC分类号： H01J37/3233 , H01J37/08 , H01J37/304 , H01J37/3171 , H01J37/32357 , H01J37/32935 , H01J2237/0817 , H01J2237/082 , H01J2237/24535 , H01J2237/30472 , H01J2237/31701 , H01L21/265
摘要： Beam current is adjusted during ion implantation by adjusting one or more parameters of an ion source. The ion beam is generated or provided by a non-arc discharge based ion source, such as an electron gun driven ion source or an RF driven ion source. A beam current adjustment amount is determined. Then, one or more parameters of the ion source are adjusted according to the determined beam current adjustment amount. The beam current is provided having a modulated beam current.
摘要翻译：通过调整离子源的一个或多个参数，在离子注入期间调整光束电流。离子束由非电弧放电型离子源（例如电子枪驱动离子源或RF驱动离子源）产生或提供。确定射束电流调节量。然后，根据确定的光束电流调节量来调整离子源的一个或多个参数。提供具有调制束电流的束电流。

7. 发明授权

US06953942B1 Ion beam utilization during scanned ion implantation 有权
标题翻译：扫描离子注入过程中的离子束利用
公开(公告)号：US06953942B1
公开(公告)日：2005-10-11
申请号：US10944989
申请日：2004-09-20
申请人： Michael A. Graf , Andrew M. Ray
发明人： Michael A. Graf , Andrew M. Ray
IPC分类号： H01J37/302 , H01J37/317
CPC分类号： H01J37/3171 , H01J37/302 , H01J2237/20228 , H01J2237/30488
摘要： The present invention is directed to implanting ions in a workpiece in a serial implantation process in a manner that produces a scan pattern that resembles the size, shape and/or other dimensional aspects of the workpiece. This improves efficiency and yield as an ion beam that the workpiece is oscillated through does not significantly “overshoot” the workpiece. The scan pattern may be slightly larger than the workpiece, however, so that inertial effects associated with changes in direction, velocity and/or acceleration of the workpiece as the workpiece reverses direction in oscillating back and forth are accounted for within a small amount of “overshoot”. This facilitates moving the workpiece through the ion beam at a relatively constant velocity which in turn facilitates substantially more uniform ion implantation.
摘要翻译：本发明涉及以串联注入工艺将离子注入到工件中，以产生类似于工件的尺寸，形状和/或其它尺寸方面的扫描图案。这提高了工件振荡通过的离子束的效率和产量，并不会显着“过冲”工件。然而，扫描图案可能稍微大于工件，使得随着工件反向前后摆动的方向，工件的方向，速度和/或加速度的变化所引起的惯性效应在少量的“ 超调“。这有助于以相对恒定的速度移动工件穿过离子束，这又促进了基本上更均匀的离子注入。

8. 发明授权

US07750320B2 System and method for two-dimensional beam scan across a workpiece of an ion implanter 有权
标题翻译：用于离子注入机工件二维束扫描的系统和方法
公开(公告)号：US07750320B2
公开(公告)日：2010-07-06
申请号：US11644623
申请日：2006-12-22
申请人： Joseph Ferrara , Bo H. Vanderberg , Michael A. Graf
发明人： Joseph Ferrara , Bo H. Vanderberg , Michael A. Graf
IPC分类号： G21K5/10
CPC分类号： H01J37/3171 , H01J37/09 , H01J2237/022 , H01J2237/024 , H01J2237/0458 , H01J2237/057 , H01J2237/24528 , H01J2237/30455 , H01J2237/30483 , H01J2237/31705
摘要： A workpiece or semiconductor wafer is tilted as a ribbon beam is swept up and/or down the workpiece. In so doing, the implant angle or the angle of the ion beam relative to the workpiece remains substantially constant across the wafer. This allows devices to be formed substantially consistently on the wafer. Resolving plates move with the beam as the beam is scanned up and/or down. This allows desired ions to impinge on the wafer, but blocks undesirable contaminants.
摘要翻译：当工件或半导体晶片沿着工件扫过和/或向下时，工件或半导体晶片被倾斜。在这样做时，植入角度或离子束相对于工件的角度在晶片上保持基本恒定。这允许在晶片上基本上一致地形成器件。当光束向上扫描和/或向下扫描时，解析板随着光束移动。这允许所需的离子撞击在晶片上，但阻止不期望的污染物。

9. 发明授权

US07589333B2 Methods for rapidly switching off an ion beam 有权
标题翻译：快速关闭离子束的方法
公开(公告)号：US07589333B2
公开(公告)日：2009-09-15
申请号：US11540449
申请日：2006-09-29
申请人： Michael A. Graf , Edward C. Eisner , William F. DiVergilio , Daniel R. Tieger
发明人： Michael A. Graf , Edward C. Eisner , William F. DiVergilio , Daniel R. Tieger
IPC分类号： H01J37/317 , H01J37/256
CPC分类号： H01J37/3171 , H01J37/08 , H01J37/3045 , H01J2237/043 , H01J2237/082 , H01J2237/24535 , H01J2237/24564 , H01J2237/24578 , H01J2237/30455 , H01J2237/30472
摘要： An ion beam is rapidly switched off during ion implantation on detecting a beam instability. The ion beam is generated or provided by a non-arc discharge based ion source, such as an electron gun ion source or an RF ion source. The ion beam is scanned across a workpiece from a starting location toward an ending location. During the scanning, one or more beam characteristics are monitored, such as beam current, beam flux, shape, and the like. An instability is detected when one or more of the beam characteristics deviate from acceptable values or levels. The ion beam is rapidly turned off on the detected instability.
摘要翻译：在离子注入期间，在检测到光束不稳定性时，离子束被快速关闭。离子束由非电弧放电型离子源（例如电子枪离子源或RF离子源）产生或提供。离子束从起始位置朝向终止位置跨工件扫描。在扫描期间，监视一个或多个光束特性，例如光束电流，光束通量，形状等。当一个或多个光束特性偏离可接受的值或水平时，检测到不稳定性。在检测到的不稳定性下，离子束快速关闭。

10. 发明申请

US20080061250A1 Ion beam monitoring in an ion implanter using an imaging device 有权
公开(公告)号：US20080061250A1
公开(公告)日：2008-03-13
申请号：US11374945
申请日：2006-03-14
申请人： Alexander S. Perel , Phil J. Ring , Ronald A. Capodilupo , Michael A. Graf
发明人： Alexander S. Perel , Phil J. Ring , Ronald A. Capodilupo , Michael A. Graf
IPC分类号： H01J37/317
CPC分类号： H01J37/3171 , H01J37/244 , H01J37/304 , H01J2237/221 , H01J2237/226 , H01J2237/2446 , H01J2237/24507 , H01J2237/24528 , H01J2237/24535 , H01J2237/24542 , H01J2237/24571 , H01J2237/30472 , H01J2237/30477
摘要： An image monitor system monitors characteristics of an ion beam employed in ion implantation. The monitored characteristics can include particle count, particle information, beam current intensity, beam shape, and the like. The system includes one or more image sensors that capture frames or images along a beam path of an ion beam. An image analyzer analyzes the captured frames to obtain measured characteristics. A controller determines adjustments or corrections according to the measured characteristics and desired beam characteristics.

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