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1. 发明授权

US06992308B2 Modulating ion beam current 有权
标题翻译：调制离子束电流
公开(公告)号：US06992308B2
公开(公告)日：2006-01-31
申请号：US10788861
申请日：2004-02-27
申请人： Michael A. Graf , Andrew M. Ray
发明人： Michael A. Graf , Andrew M. Ray
IPC分类号： H01J37/317 , G21G5/00
CPC分类号： H01J37/304 , H01J37/3171 , H01J2237/30455 , H01J2237/30472 , H01J2237/31703
摘要： The present invention is directed to modulating ion beam current in an ion implantation system to mitigate non-uniform ion implantations, for example. Multiple arrangements are revealed for modulating the intensity of the ion beam. For example, the volume or number of ions within the beam can be altered by biasing one or more different elements downstream of the ion source. Similarly, the dosage of ions within the ion beam can also be manipulated by controlling elements more closely associated with the ion source. In this manner, the implantation process can be regulated so that the wafer can be implanted with a more uniform coating of ions.
摘要翻译：本发明涉及在离子注入系统中调制离子束电流以减轻例如不均匀的离子注入。显示了用于调制离子束强度的多种布置。例如，可以通过在离子源下游偏置一个或多个不同元件来改变束内的离子的体积或数量。类似地，离子束内离子的剂量也可以通过控制与离子源更紧密相关的元素来操纵。以这种方式，可以调节注入工艺，使得可以以更均匀的离子涂层注入晶片。

2. 发明授权

US06953942B1 Ion beam utilization during scanned ion implantation 有权
标题翻译：扫描离子注入过程中的离子束利用
公开(公告)号：US06953942B1
公开(公告)日：2005-10-11
申请号：US10944989
申请日：2004-09-20
申请人： Michael A. Graf , Andrew M. Ray
发明人： Michael A. Graf , Andrew M. Ray
IPC分类号： H01J37/302 , H01J37/317
CPC分类号： H01J37/3171 , H01J37/302 , H01J2237/20228 , H01J2237/30488
摘要： The present invention is directed to implanting ions in a workpiece in a serial implantation process in a manner that produces a scan pattern that resembles the size, shape and/or other dimensional aspects of the workpiece. This improves efficiency and yield as an ion beam that the workpiece is oscillated through does not significantly “overshoot” the workpiece. The scan pattern may be slightly larger than the workpiece, however, so that inertial effects associated with changes in direction, velocity and/or acceleration of the workpiece as the workpiece reverses direction in oscillating back and forth are accounted for within a small amount of “overshoot”. This facilitates moving the workpiece through the ion beam at a relatively constant velocity which in turn facilitates substantially more uniform ion implantation.
摘要翻译：本发明涉及以串联注入工艺将离子注入到工件中，以产生类似于工件的尺寸，形状和/或其它尺寸方面的扫描图案。这提高了工件振荡通过的离子束的效率和产量，并不会显着“过冲”工件。然而，扫描图案可能稍微大于工件，使得随着工件反向前后摆动的方向，工件的方向，速度和/或加速度的变化所引起的惯性效应在少量的“ 超调“。这有助于以相对恒定的速度移动工件穿过离子束，这又促进了基本上更均匀的离子注入。

3. 发明授权

US07453160B2 Simplified wafer alignment 有权
标题翻译：简化晶片对准
公开(公告)号：US07453160B2
公开(公告)日：2008-11-18
申请号：US10830734
申请日：2004-04-23
申请人： Andrew M. Ray
发明人： Andrew M. Ray
IPC分类号： H01L23/544
CPC分类号： H01L21/67259 , Y10S414/135
摘要： The present invention is directed to aligning wafers within semiconductor fabrication tools. More particularly, one or more aspects of the present invention pertain to quickly and efficiently finding an alignment marking, such as an alignment notch, on a wafer to allow the wafer to be appropriately oriented within an alignment tool. Unlike conventional systems, the notch is located without firmly holding and spinning or rotating the wafer. Exposure to considerable backside contaminants is thereby mitigated and the complexity and/or cost associated with aligning the wafer is thereby reduced.
摘要翻译：本发明涉及在半导体制造工具内对准晶片。更具体地，本发明的一个或多个方面涉及在晶片上快速有效地找到对准标记，例如对准凹口，以允许晶片在对准工具内被适当地取向。不同于传统的系统，凹槽位于没有牢固地保持和旋转或旋转晶片的位置。从而减轻了相当大的背面污染物的暴露，从而降低了与对准晶片相关的复杂性和/或成本。

4. 发明授权

US4700077A Ion beam implanter control system 失效
标题翻译：离子束注入机控制系统
公开(公告)号：US4700077A
公开(公告)日：1987-10-13
申请号：US836331
申请日：1986-03-05
申请人： Jerald P. Dykstra , Andrew M. Ray , Monroe L. King
发明人： Jerald P. Dykstra , Andrew M. Ray , Monroe L. King
IPC分类号： C23C14/48 , C23C14/50 , C23C14/54 , G01N23/00 , H01J37/317 , H01L21/68 , G21K5/08
CPC分类号： H01J37/3171 , H01L21/68
摘要： A scanning ion beam implanter having a wafer support to control the angle of incidence between an ion beam and the wafer. The wafer support preferably bends the wafer into a segment of a cylinder. As the ion beam scans across the curved wafer surface the angle of incidence remains relatively uniform. The support also includes structure for pivoting the bent wafer about a pivot axis. The pivoting of the wafer is synchronized with the scanning of the ion beam to compensate for scanning of the ion beam in a direction transverse to the direction compensated for by the cylindrical curvature of the wafer.
摘要翻译：扫描离子束注入机，其具有用于控制离子束和晶片之间的入射角的晶片支撑。晶片支撑件优选地将晶片弯曲成圆柱体的一部分。当离子束在弯曲的晶片表面上扫描时，入射角保持相对均匀。支撑件还包括用于围绕枢转轴线枢转弯曲晶片的结构。晶片的旋转与离子束的扫描同步，以补偿离子束在横向于由晶片的圆柱形曲率补偿的方向的方向上的扫描。

5. 发明申请

US20090294698A1 CONTROL OF PARTICLES ON SEMICONDUCTOR WAFERS WHEN IMPLANTING BORON HYDRIDES 有权
标题翻译：当掺入硼氢化合物时，半导体波长颗粒的控制
公开(公告)号：US20090294698A1
公开(公告)日：2009-12-03
申请号：US12474786
申请日：2009-05-29
申请人： Andrew M. Ray
发明人： Andrew M. Ray
IPC分类号： H01J37/08
CPC分类号： H01J37/3171 , H01J2237/022
摘要： A method for reducing particle contamination during implantation of ions comprises providing an implantation system for implanting ions into a workpiece via an ion beam, wherein one or more components are under selective vacuum and have one or more contaminants in a first state disposed thereon. A gas is introduced to the implantation system, wherein the gas generally reacts with at least a portion of the one or more contaminants, therein transforming the at least a portion of the one or more contaminants into a second state The at least a portion of the one or more contaminants in the second state remain disposed on the one or more components, and wherein the at least a portion of the second state of the one or more contaminants generally does not produce particle contamination on the one or more workpieces.
摘要翻译：用于在离子注入期间减少颗粒污染的方法包括提供用于通过离子束将离子注入工件的注入系统，其中一个或多个组分处于选择性真空下并且在其上设置有第一状态的一种或多种污染物。气体被引入到植入系统中，其中气体通常与至少一部分一种或多种污染物反应，其中将一种或多种污染物的至少一部分转化为第二状态。至少一部分处于第二状态的一个或多个污染物保持设置在一个或多个部件上，并且其中一个或多个污染物的第二状态的至少一部分通常不会在一个或多个工件上产生颗粒污染。

6. 发明授权

US5406088A Scan and tilt apparatus for an ion implanter 失效
标题翻译：用于离子注入机的扫描和倾斜装置
公开(公告)号：US5406088A
公开(公告)日：1995-04-11
申请号：US172441
申请日：1993-12-22
申请人： Robert A. Brune , Andrew M. Ray
发明人： Robert A. Brune , Andrew M. Ray
IPC分类号： C23C14/48 , B25J9/04 , H01J37/20 , H01J37/317 , H01L21/265 , H01L21/68
CPC分类号： H01J37/3171 , B25J9/042 , H01J2237/20228
摘要： An improved scan and tilt apparatus for an ion implanter wherein a wafer-receiving platen assembly is received on the end member of a multiple axis arm system which is operable to effect scanning motion of the wafer along a straight line which intercepts the wafer tilt axis in any tilt position of the platen assembly. The arm system includes a rail and linear bearing system which interconnects an input member with the end member of the arm system to restrict the scanning motion to a straight line.
摘要翻译：一种用于离子注入机的改进的扫描和倾斜装置，其中晶片接收压板组件被容纳在多轴臂系统的端部构件上，该多轴臂系统的端部构件可操作以实现晶片沿着截取晶片倾斜轴线的直线的扫描运动压板组件的任何倾斜位置。臂系统包括轨道和直线轴承系统，其将输入构件与臂系统的端部构件相互连接，以将扫描运动限制为直线。

7. 发明授权

US5160846A Method and apparatus for reducing tilt angle variations in an ion implanter 失效
标题翻译：用于减少离子注入机中的倾斜角变化的方法和装置
公开(公告)号：US5160846A
公开(公告)日：1992-11-03
申请号：US804484
申请日：1991-12-09
申请人： Andrew M. Ray
发明人： Andrew M. Ray
IPC分类号： H01J37/147 , H01J37/317
CPC分类号： H01J37/3171 , H01J37/1477
摘要： An ion beam implantation system. An ion beam is controllably deflected from an initial trajectory as it passes through spaced parallel that are biased by a control circuit. Once deflected, the ion beam enters an electrostatic lens that redeflects the once deflected ion beam. When the beam exits the lens it moves along a trajectory that impacts a workpiece. By controlled deflection of the beam multiple parallel beam paths result, all of which input the workpiece at a uniform impact angle.
摘要翻译：离子束注入系统。当离子束通过由控制电路偏置的间隔开的并联时，离子束可以从初始轨迹可控地偏转。一旦偏转，离子束就进入静电透镜，该透镜重新反射一次偏转的离子束。当光束离开透镜时，它沿着撞击工件的轨迹移动。通过光束的受控偏转，产生多个平行光束路径，所有这些均匀的冲击角度输入工件。

8. 发明授权

US07994487B2 Control of particles on semiconductor wafers when implanting boron hydrides 有权
标题翻译：在植入硼氢化物时控制半导体晶片上的颗粒
公开(公告)号：US07994487B2
公开(公告)日：2011-08-09
申请号：US12474786
申请日：2009-05-29
申请人： Andrew M. Ray
发明人： Andrew M. Ray
IPC分类号： H01J37/08
CPC分类号： H01J37/3171 , H01J2237/022
摘要： A method for reducing particle contamination during implantation of ions comprises providing an implantation system for implanting ions into a workpiece via an ion beam, wherein one or more components are under selective vacuum and have one or more contaminants in a first state disposed thereon. A gas is introduced to the implantation system, wherein the gas generally reacts with at least a portion of the one or more contaminants, therein transforming the at least a portion of the one or more contaminants into a second state The at least a portion of the one or more contaminants in the second state remain disposed on the one or more components, and wherein the at least a portion of the second state of the one or more contaminants generally does not produce particle contamination on the one or more workpieces.
摘要翻译：用于在离子注入期间减少颗粒污染的方法包括提供用于通过离子束将离子注入工件的注入系统，其中一个或多个组分处于选择性真空下并且在其上设置有第一状态的一种或多种污染物。气体被引入到植入系统中，其中气体通常与至少一部分一种或多种污染物反应，其中将一种或多种污染物的至少一部分转化为第二状态。至少一部分处于第二状态的一个或多个污染物保持设置在一个或多个部件上，并且其中一个或多个污染物的第二状态的至少一部分通常不会在一个或多个工件上产生颗粒污染。

9. 发明授权

US4975586A Ion implanter end station 失效
标题翻译：离子注入机终端站
公开(公告)号：US4975586A
公开(公告)日：1990-12-04
申请号：US317224
申请日：1989-02-28
申请人： Andrew M. Ray
发明人： Andrew M. Ray
IPC分类号： H01J37/20 , H01J37/317 , H01L21/265 , H01L21/687
CPC分类号： H01L21/68764 , H01J37/3171
摘要： An end station for an ion implanter which includes a wafer support which is rotatable about a first axis extending substantially along a wafer diameter in the plane defined by the wafer surface, and about a second axis perpendicular to the first axis and extending through the center of the wafer. The drive systems for providing rotation of the wafer support are operable independently of one another and include stepper motors mounted outside the vacuum chamber of the implanter.

10. 发明授权

US06940079B2 Method of correction for wafer crystal cut error in semiconductor processing 失效
标题翻译：半导体处理中晶圆切割误差校正方法
公开(公告)号：US06940079B2
公开(公告)日：2005-09-06
申请号：US11006840
申请日：2004-12-08
申请人： Andrew M. Ray
发明人： Andrew M. Ray
IPC分类号： H01J37/147 , H01J37/317 , H01L21/265 , B32B3/02
CPC分类号： H01L21/26513 , B32B3/02 , H01J37/3171 , H01J2237/1501 , H01J2237/31701 , H01L21/26586 , Y10S414/135 , Y10T428/21
摘要： The present invention is directed to accounting for crystal cut error data in ion implantation systems, thereby facilitating more accurate ion implantation. One or more aspects of the invention also consider possible shadowing effects that can result from features formed on the surface of a wafer being doped. According to one or more aspects of the invention, crystal cut error data and optionally feature data also are periodically fed forward in one or more ion implantation stages or systems to ascertain how to re-orient the ion beam with respect to the workpiece to achieve desired implantation results.
摘要翻译：本发明旨在说明离子注入系统中的晶体切割误差数据，从而促进更精确的离子注入。本发明的一个或多个方面还考虑可能由在被掺杂的晶片的表面上形成的特征产生的阴影效应。根据本发明的一个或多个方面，晶体切割误差数据和任选的特征数据也在一个或多个离子注入阶段或系统中周期性地向前馈送，以确定如何相对于工件重新定向离子束以实现期望的植入结果。

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