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1. 发明授权

US08879307B2 Magnetoresistive device and nonvolatile memory with the same 有权
标题翻译：磁阻器件与非易失性存储器相同
公开(公告)号：US08879307B2
公开(公告)日：2014-11-04
申请号：US13424769
申请日：2012-03-20
申请人： Eiji Kitagawa , Naoharu Shimomura , Hiroaki Yoda , Junichi Ito , Minoru Amano , Chikayoshi Kamata , Keiko Abe
发明人： Eiji Kitagawa , Naoharu Shimomura , Hiroaki Yoda , Junichi Ito , Minoru Amano , Chikayoshi Kamata , Keiko Abe
IPC分类号： G11C11/00 , G11C11/16 , G11C19/08
CPC分类号： G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C19/0808
摘要： A magnetoresistive device of an embodiment includes: first and second devices each including, a first magnetic layer having a changeable magnetization perpendicular to a film plane, a second magnetic layer having a fixed and perpendicular magnetization, and a nonmagnetic layer interposed between the first and second magnetic layers, the first and second devices being disposed in parallel on a first face of an interconnect layer; and a TMR device including a third magnetic layer having perpendicular magnetic anisotropy and having a changeable magnetization, a fourth magnetic layer having a fixed magnetization parallel to a film plane, and a tunnel barrier layer interposed between the third and fourth magnetic layers, the TMR device being disposed on a second face of the interconnect layer, and the third magnetic layer being magnetostatically coupled to the first magnetic layers of the first and second devices.
摘要翻译：实施例的磁阻装置包括：第一和第二装置，每个包括：具有垂直于膜平面的可变磁化的第一磁性层，具有固定和垂直磁化的第二磁性层，以及介于第一和第二磁化层之间的非磁性层磁性层，所述第一和第二装置平行布置在互连层的第一面上; 以及包括具有垂直磁各向异性并且具有可变磁化的第三磁性层的TMR器件，具有与膜平面平行的固定磁化强度的第四磁性层和介于第三和第四磁性层之间的隧道势垒层，TMR器件布置在所述互连层的第二面上，并且所述第三磁性层被静磁耦合到所述第一和第二器件的第一磁性层。

2. 发明授权

US08878317B2 Magnetoresistive element and magnetic memory 有权
标题翻译：磁阻元件和磁记忆体
公开(公告)号：US08878317B2
公开(公告)日：2014-11-04
申请号：US13210678
申请日：2011-08-16
申请人： Tadaomi Daibou , Minoru Amano , Daisuke Saida , Junichi Ito , Yuichi Ohsawa , Chikayoshi Kamata , Saori Kashiwada , Hiroaki Yoda
发明人： Tadaomi Daibou , Minoru Amano , Daisuke Saida , Junichi Ito , Yuichi Ohsawa , Chikayoshi Kamata , Saori Kashiwada , Hiroaki Yoda
IPC分类号： H01L29/82 , H01L43/10 , H01F10/32 , H01L43/08 , H01L27/22
CPC分类号： H01L43/02 , H01F10/3254 , H01F10/3272 , H01F10/3286 , H01F10/329 , H01L27/228 , H01L43/08 , H01L43/10
摘要： A magnetoresistive element according to an embodiment includes: a first to third ferromagnetic layers, and a first nonmagnetic layer, the first and second ferromagnetic layers each having an axis of easy magnetization in a direction perpendicular to a film plane, the third ferromagnetic layer including a plurality of ferromagnetic oscillators generating rotating magnetic fields of different oscillation frequencies from one another. Spin-polarized electrons are injected into the first ferromagnetic layer and induce precession movements in the plurality of ferromagnetic oscillators of the third ferromagnetic layer by flowing a current between the first and third ferromagnetic layers, the rotating magnetic fields are generated by the precession movements and are applied to the first ferromagnetic layer, and at least one of the rotating magnetic fields assists a magnetization switching in the first ferromagnetic layer.
摘要翻译：根据实施例的磁阻元件包括：第一至第三铁磁层和第一非磁性层，第一和第二铁磁层各自在垂直于膜平面的方向上具有容易磁化的轴，所述第三铁磁层包括多个铁磁振荡器产生彼此不同振荡频率的旋转磁场。旋转极化电子被注入到第一铁磁层中并通过在第一和第三铁磁层之间流动电流而引起第三铁磁层的多个铁磁振荡器中的进动运动，旋转磁场由进动运动产生，并且是施加到第一铁磁层，并且至少一个旋转磁场有助于第一铁磁层中的磁化切换。

3. 发明授权

US08710605B2 Magnetic memory and method of manufacturing the same 有权
标题翻译：磁存储器及其制造方法
公开(公告)号：US08710605B2
公开(公告)日：2014-04-29
申请号：US13231894
申请日：2011-09-13
申请人： Shigeki Takahashi , Yuichi Ohsawa , Junichi Ito , Chikayoshi Kamata , Saori Kashiwada , Minoru Amano , Hiroaki Yoda
发明人： Shigeki Takahashi , Yuichi Ohsawa , Junichi Ito , Chikayoshi Kamata , Saori Kashiwada , Minoru Amano , Hiroaki Yoda
IPC分类号： H01L29/72
CPC分类号： H01L43/12 , H01L27/228 , H01L43/08 , H01L43/10
摘要： A magnetic memory according to an embodiment includes: at least one memory cell comprising a magnetoresistive element as a memory element, and first and second electrodes that energize the magnetoresistive element. The magnetoresistive element includes: a first magnetic layer having a variable magnetization direction perpendicular to a film plane; a tunnel barrier layer on the first magnetic layer; and a second magnetic layer on the tunnel barrier layer, and having a fixed magnetization direction perpendicular to the film plane. The first magnetic layer including: a first region; and a second region outside the first region so as to surround the first region, and having a smaller perpendicular magnetic anisotropy energy than that of the first region. The second magnetic layer including: a third region; and a fourth region outside the third region, and having a smaller perpendicular magnetic anisotropy energy than that of the third region.
摘要翻译：根据实施例的磁存储器包括：包括作为存储元件的磁阻元件的至少一个存储单元，以及激励磁阻元件的第一和第二电极。磁阻元件包括：具有与膜平面垂直的可变磁化方向的第一磁性层; 在第一磁性层上的隧道阻挡层; 以及隧道势垒层上的第二磁性层，并且具有与膜平面垂直的固定的磁化方向。所述第一磁性层包括：第一区域; 以及围绕第一区域的第一区域外的第二区域，并且具有比第一区域小的垂直磁各向异性能量。第二磁性层包括：第三区域; 以及第三区域外的第四区域，并且具有比第三区域小的垂直磁各向异性能量。

4. 发明申请

US20120241827A1 MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY 有权
标题翻译：磁性元件和磁记忆
公开(公告)号：US20120241827A1
公开(公告)日：2012-09-27
申请号：US13210678
申请日：2011-08-16
申请人： Tadaomi DAIBOU , Minoru Amano , Daisuke Saida , Junichi Ito , Yuichi Ohsawa , Chikayoshi Kamata , Saori Kashiwada , Hiroaki Yoda
发明人： Tadaomi DAIBOU , Minoru Amano , Daisuke Saida , Junichi Ito , Yuichi Ohsawa , Chikayoshi Kamata , Saori Kashiwada , Hiroaki Yoda
IPC分类号： H01L27/22 , H01L43/10 , H01L43/02
CPC分类号： H01L43/02 , H01F10/3254 , H01F10/3272 , H01F10/3286 , H01F10/329 , H01L27/228 , H01L43/08 , H01L43/10
摘要： A magnetoresistive element according to an embodiment includes: a first to third ferromagnetic layers, and a first nonmagnetic layer, the first and second ferromagnetic layers each having an axis of easy magnetization in a direction perpendicular to a film plane, the third ferromagnetic layer including a plurality of ferromagnetic oscillators generating rotating magnetic fields of different oscillation frequencies from one another. Spin-polarized electrons are injected into the first ferromagnetic layer and induce precession movements in the plurality of ferromagnetic oscillators of the third ferromagnetic layer by flowing a current between the first and third ferromagnetic layers, the rotating magnetic fields are generated by the precession movements and are applied to the first ferromagnetic layer, and at least one of the rotating magnetic fields assists a magnetization switching in the first ferromagnetic layer.
摘要翻译：根据实施例的磁阻元件包括：第一至第三铁磁层和第一非磁性层，第一和第二铁磁层各自在垂直于膜平面的方向上具有容易磁化的轴，所述第三铁磁层包括多个铁磁振荡器产生彼此不同振荡频率的旋转磁场。旋转极化电子被注入到第一铁磁层中并通过在第一和第三铁磁层之间流动电流而引起第三铁磁层的多个铁磁振荡器中的进动运动，旋转磁场由进动运动产生，并且是施加到第一铁磁层，并且至少一个旋转磁场有助于第一铁磁层中的磁化切换。

5. 发明授权

US08576616B2 Magnetic element and nonvolatile memory device 失效
标题翻译：磁性元件和非易失性存储器件
公开(公告)号：US08576616B2
公开(公告)日：2013-11-05
申请号：US13227959
申请日：2011-09-08
申请人： Daisuke Saida , Minoru Amano , Junichi Ito , Yuichi Ohsawa , Saori Kashiwada , Chikayoshi Kamata , Tadaomi Daibou
发明人： Daisuke Saida , Minoru Amano , Junichi Ito , Yuichi Ohsawa , Saori Kashiwada , Chikayoshi Kamata , Tadaomi Daibou
IPC分类号： G11C11/00
CPC分类号： G11C11/161 , G11C11/1655 , G11C11/1659 , G11C11/1673 , G11C11/1675 , H01L27/228 , H01L43/08
摘要： According to one embodiment, a magnetic element includes first and second conductive layers, an intermediate interconnection, and first and second stacked units. The intermediate interconnection is provided between the conductive layers. The first stacked unit is provided between the first conductive layer and the interconnection, and includes first and second ferromagnetic layer and a first nonmagnetic layer provided between the first and second ferromagnetic layers. The second stacked unit is provided between the second conductive layer and the interconnection, and includes third and fourth ferromagnetic layers and a second nonmagnetic layer provided between the third and fourth ferromagnetic layers. A magnetization direction of the second ferromagnetic layer is determined by causing a spin-polarized electron and a magnetic field to act on the second ferromagnetic layer.
摘要翻译：根据一个实施例，磁性元件包括第一和第二导电层，中间互连以及第一和第二堆叠单元。中间互连设置在导电层之间。第一层叠单元设置在第一导电层和互连之间，并且包括第一和第二铁磁层和设置在第一和第二铁磁层之间的第一非磁性层。第二堆叠单元设置在第二导电层和互连之间，并且包括第三和第四铁磁层以及设置在第三和第四铁磁层之间的第二非磁性层。通过使自旋极化电子和磁场作用于第二铁磁层来确定第二铁磁层的磁化方向。

6. 发明申请

US20130249028A1 MAGNETIC MEMORY AND METHOD OF FABRICATING THE SAME 有权
标题翻译：磁记忆及其制造方法
公开(公告)号：US20130249028A1
公开(公告)日：2013-09-26
申请号：US13623306
申请日：2012-09-20
申请人： Chikayoshi KAMATA , Minoru Amano , Tadaomi Daibou , Junichi Ito
发明人： Chikayoshi KAMATA , Minoru Amano , Tadaomi Daibou , Junichi Ito
IPC分类号： H01L43/12 , H01L27/22
CPC分类号： H01L43/10 , H01F10/1933 , H01F10/30 , H01F10/3286 , H01F41/302 , H01L27/228 , H01L43/08 , H01L43/12
摘要： A method of fabricating a magnetic memory according to an embodiment includes: forming a separation layer on a first substrate; sequentially forming a first ferromagnetic layer, a first nonmagnetic layer, and a second ferromagnetic layer on the separation layer, at least one of the first and the second ferromagnetic layers having a single crystal structure; forming a first conductive bonding layer on the second ferromagnetic layer; forming a second conductive bonding layer on a second substrate, on which a transistor and a wiring are formed, the second conductive bonding layer electrically connecting to the transistor; arranging the first and second substrate so that the first conductive bonding layer and the second conductive bonding layer are opposed to each other, and bonding the first and the second conductive bonding layers to each other; and separating the first substrate from the first ferromagnetic layer by using the separation layer.
摘要翻译：根据实施例的制造磁存储器的方法包括：在第一基板上形成分离层; 在分离层上顺序地形成第一铁磁层，第一非磁性层和第二铁磁层，第一和第二铁磁层中的至少一个具有单晶结构; 在所述第二铁磁层上形成第一导电接合层; 在其上形成有晶体管和布线的第二基板上形成第二导电接合层，所述第二导电接合层电连接到所述晶体管; 布置第一和第二基板，使得第一导电接合层和第二导电接合层彼此相对，并且将第一和第二导电接合层彼此接合; 以及通过使用所述分离层将所述第一基板与所述第一铁磁层分离。

7. 发明授权

US08508979B2 Magnetic recording element and nonvolatile memory device 失效
标题翻译：磁记录元件和非易失性存储器件
公开(公告)号：US08508979B2
公开(公告)日：2013-08-13
申请号：US13228040
申请日：2011-09-08
申请人： Daisuke Saida , Minoru Amano , Junichi Ito , Yuichi Ohsawa , Saori Kashiwada , Chikayoshi Kamata , Tadaomi Daibou
发明人： Daisuke Saida , Minoru Amano , Junichi Ito , Yuichi Ohsawa , Saori Kashiwada , Chikayoshi Kamata , Tadaomi Daibou
IPC分类号： G11C11/00
CPC分类号： G11B5/66 , G11C11/161 , H01L27/228 , H01L43/08
摘要： According to one embodiment, a magnetic recording element includes a stacked body. The stacked body includes a first and a second stacked unit. The first stacked unit includes first and second ferromagnetic layers and a first nonmagnetic layer. The first nonmagnetic layer is provided between the first and second ferromagnetic layers. The second stacked unit is stacked with the first stacked unit and includes third and fourth ferromagnetic layers and a second nonmagnetic layer. The fourth ferromagnetic layer is stacked with the third ferromagnetic layer. The second nonmagnetic layer is provided between the third and fourth ferromagnetic layers. An outer edge of the fourth ferromagnetic layer includes a portion outside an outer edge of the first stacked unit in a plane. A magnetization direction of the second ferromagnetic layer is determined by causing a spin-polarized electron and a rotating magnetic field to act on the second ferromagnetic layer.
摘要翻译：根据一个实施例，磁记录元件包括堆叠体。堆叠体包括第一和第二堆叠单元。第一堆叠单元包括第一和第二铁磁层和第一非磁性层。第一非磁性层设置在第一和第二铁磁层之间。第二堆叠单元与第一堆叠单元堆叠并且包括第三和第四铁磁层和第二非磁性层。第四铁磁层与第三铁磁层层叠。第二非磁性层设置在第三和第四铁磁层之间。第四铁磁层的外边缘包括平面内第一堆叠单元的外边缘外侧的部分。通过使自旋极化电子和旋转磁场作用于第二铁磁层来确定第二铁磁层的磁化方向。

8. 发明授权

US08488375B2 Magnetic recording element and nonvolatile memory device 有权
标题翻译：磁记录元件和非易失性存储器件
公开(公告)号：US08488375B2
公开(公告)日：2013-07-16
申请号：US13037592
申请日：2011-03-01
申请人： Daisuke Saida , Minoru Amano , Junichi Ito , Yuichi Ohsawa , Saori Kashiwada , Chikayoshi Kamata , Shigeki Takahashi
发明人： Daisuke Saida , Minoru Amano , Junichi Ito , Yuichi Ohsawa , Saori Kashiwada , Chikayoshi Kamata , Shigeki Takahashi
IPC分类号： G11C11/14
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1659 , H01L27/228
摘要： According to one embodiment, a magnetic recording element includes a stacked body including a first stacked unit and a second stacked unit. The first stacked unit includes a first ferromagnetic layer, a second ferromagnetic layer and a first nonmagnetic layer. Magnetization of the first ferromagnetic layer is substantially fixed in a first direction being perpendicular to a first ferromagnetic layer surface. The second stacked unit includes a third ferromagnetic layer, a fourth ferromagnetic layer and a second nonmagnetic layer. Magnetization of the fourth ferromagnetic layer is substantially fixed in a second direction being perpendicular to a fourth ferromagnetic layer surface. The first direction is opposite to the second direction.
摘要翻译：根据一个实施例，磁记录元件包括包括第一堆叠单元和第二堆叠单元的堆叠体。第一堆叠单元包括第一铁磁层，第二铁磁层和第一非磁性层。第一铁磁层的磁化在垂直于第一铁磁层表面的第一方向上基本固定。第二堆叠单元包括第三铁磁层，第四铁磁层和第二非磁性层。第四铁磁层的磁化在垂直于第四铁磁层表面的第二方向上基本固定。第一方向与第二方向相反。

9. 发明授权

US08841139B2 Magnetic memory and method of fabricating the same 有权
标题翻译：磁存储器及其制造方法
公开(公告)号：US08841139B2
公开(公告)日：2014-09-23
申请号：US13623306
申请日：2012-09-20
申请人： Chikayoshi Kamata , Minoru Amano , Tadaomi Daibou , Junichi Ito
发明人： Chikayoshi Kamata , Minoru Amano , Tadaomi Daibou , Junichi Ito
IPC分类号： H01L21/00
CPC分类号： H01L43/10 , H01F10/1933 , H01F10/30 , H01F10/3286 , H01F41/302 , H01L27/228 , H01L43/08 , H01L43/12
摘要： A method of fabricating a magnetic memory according to an embodiment includes: forming a separation layer on a first substrate; sequentially forming a first ferromagnetic layer, a first nonmagnetic layer, and a second ferromagnetic layer on the separation layer, at least one of the first and the second ferromagnetic layers having a single crystal structure; forming a first conductive bonding layer on the second ferromagnetic layer; forming a second conductive bonding layer on a second substrate, on which a transistor and a wiring are formed, the second conductive bonding layer electrically connecting to the transistor; arranging the first and second substrate so that the first conductive bonding layer and the second conductive bonding layer are opposed to each other, and bonding the first and the second conductive bonding layers to each other; and separating the first substrate from the first ferromagnetic layer by using the separation layer.
摘要翻译：根据实施例的制造磁存储器的方法包括：在第一基板上形成分离层; 在分离层上顺序地形成第一铁磁层，第一非磁性层和第二铁磁层，第一和第二铁磁层中的至少一个具有单晶结构; 在所述第二铁磁层上形成第一导电接合层; 在其上形成有晶体管和布线的第二基板上形成第二导电接合层，所述第二导电接合层电连接到所述晶体管; 布置第一和第二基板，使得第一导电接合层和第二导电接合层彼此相对，并且将第一和第二导电接合层彼此接合; 以及通过使用所述分离层将所述第一基板与所述第一铁磁层分离。

10. 发明授权

US08680632B2 Magnetoresistive element and magnetic memory 有权
标题翻译：磁阻元件和磁记忆体
公开(公告)号：US08680632B2
公开(公告)日：2014-03-25
申请号：US13310154
申请日：2011-12-02
申请人： Tadaomi Daibou , Junichi Ito , Tadashi Kai , Minoru Amano , Hiroaki Yoda , Terunobu Miyazaki , Shigemi Mizukami , Koji Ando , Kay Yakushiji , Shinji Yuasa , Hitoshi Kubota , Akio Fukushima , Taro Nagahama , Takahide Kubota
发明人： Tadaomi Daibou , Junichi Ito , Tadashi Kai , Minoru Amano , Hiroaki Yoda , Terunobu Miyazaki , Shigemi Mizukami , Koji Ando , Kay Yakushiji , Shinji Yuasa , Hitoshi Kubota , Akio Fukushima , Taro Nagahama , Takahide Kubota
IPC分类号： H01L29/82 , G11C11/00
CPC分类号： H01L43/10 , H01L23/528 , H01L27/222 , H01L27/226 , H01L43/02 , H01L43/08 , H01L2924/0002 , H01L2924/00
摘要： A magnetoresistive element according to an embodiment includes: a base layer; a first magnetic layer formed on the base layer, and including a first magnetic film having an axis of easy magnetization in a direction perpendicular to a film plane, the first magnetic film including MnxGa100-x (45≦x
摘要翻译：根据实施例的磁阻元件包括：基底层; 第一磁性层，其形成在所述基底层上，并且包括在垂直于膜平面的方向上具有容易磁化的轴的第一磁性膜，所述第一磁性膜包括Mn x Ga 100-x（45≤n1E; x <64原子％）; 形成在第一磁性层上的第一非磁性层; 以及形成在所述第一非磁性层上的第二磁性层，并且包括在垂直于膜平面的方向上具有容易磁化的轴的第二磁性膜，所述第二磁性膜包括MnyGa100-y（45＆lt; IL1; y <64原子％），。第一和第二磁性层包括彼此不同的Mn组成比，第一磁性层的磁化方向可以通过第一非磁性层在第一磁性层和第二磁性层之间流动的电流而改变。

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