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1. 发明授权

US06797588B2 Method for manufacturing a semiconductor device having a trench and a thick insulation film at the trench opening 有权
标题翻译：在沟槽开口处制造具有沟槽和厚绝缘膜的半导体器件的方法
公开(公告)号：US06797588B2
公开(公告)日：2004-09-28
申请号：US10108443
申请日：2002-03-29
申请人： Eiji Ishikawa , Takaaki Aoki , Kenji Kondo
发明人： Eiji Ishikawa , Takaaki Aoki , Kenji Kondo
IPC分类号： H01L2176
CPC分类号： H01L29/7813 , H01L21/76235 , H01L21/823487 , H01L29/0657 , H01L29/42368 , H01L29/511 , H01L29/66348 , H01L29/7397
摘要： A surface of a semiconductor substrate is selectively etched to form a first opening, which serves as the opening of a trench. A USG film is deposited on the first opening. A second opening, the width of which is smaller than that of the first opening, is formed in the USG film within the first opening. An inner section of the trench is formed by etching while using the USG film as a mask. The inner surface of the inner region is thermally oxidized to form a silicon oxide film, and a gate insulating film is made by the silicon oxide film and the USG film. A gate electrode is formed in the trench. The gate insulating film is relatively thick at the opening of the trench, so the breakdown voltage at the opening of the trench is increased.
摘要翻译：选择性地蚀刻半导体衬底的表面以形成用作沟槽开口的第一开口。 USG胶片沉积在第一个开口处。在第一开口内的USG膜中形成第二开口，其宽度小于第一开口的宽度。在使用USG膜作为掩模的同时通过蚀刻形成沟槽的内部。内部区域的内表面被热氧化以形成氧化硅膜，并且通过氧化硅膜和USG膜制成栅极绝缘膜。在沟槽中形成栅电极。栅极绝缘膜在沟槽的开口处相对较厚，因此沟槽开口处的击穿电压增加。

2. 发明授权

US07541257B2 Semiconductor device having three-dimensional construction and method for manufacturing the same 失效
标题翻译：具有三维结构的半导体器件及其制造方法
公开(公告)号：US07541257B2
公开(公告)日：2009-06-02
申请号：US11519064
申请日：2006-09-12
申请人： Eiji Ishikawa , Takaaki Aoki
发明人： Eiji Ishikawa , Takaaki Aoki
IPC分类号： H01L21/76
CPC分类号： H01L31/035281 , B81B2201/058 , B81B2201/06 , B81C1/00071 , B81C2201/0169 , Y02E10/50
摘要： A semiconductor device includes: a silicon substrate; and a silicon oxide film disposed on the silicon substrate. The silicon oxide film includes a part, which separates from a surface of the silicon substrate, so that the silicon oxide film provides a three-dimensional construction. By using the three-dimensional construction, an additional function such as a resistor or a capacitor is easily added in the device. Further, a manufacturing method of this three-dimensional construction is simple and has a low cost.
摘要翻译：半导体器件包括：硅衬底; 以及设置在硅衬底上的氧化硅膜。氧化硅膜包括从硅衬底的表面分离的部分，使得氧化硅膜提供三维结构。通过使用三维构造，在该装置中容易添加诸如电阻器或电容器的附加功能。此外，该三维构造的制造方法简单，成本低。

3. 发明申请

US20070066052A1 Semiconductor device having three-dimensional construction and method for manufacturing the same 失效
标题翻译：具有三维结构的半导体器件及其制造方法
公开(公告)号：US20070066052A1
公开(公告)日：2007-03-22
申请号：US11519064
申请日：2006-09-12
申请人： Eiji Ishikawa , Takaaki Aoki
发明人： Eiji Ishikawa , Takaaki Aoki
IPC分类号： H01L21/4763 , H01L29/06
CPC分类号： H01L31/035281 , B81B2201/058 , B81B2201/06 , B81C1/00071 , B81C2201/0169 , Y02E10/50
摘要： A semiconductor device includes: a silicon substrate; and a silicon oxide film disposed on the silicon substrate. The silicon oxide film includes a part, which separates from a surface of the silicon substrate, so that the silicon oxide film provides a three-dimensional construction. By using the three-dimensional construction, an additional function such as a resistor or a capacitor is easily added in the device. Further, a manufacturing method of this three-dimensional construction is simple and has a low cost.
摘要翻译：半导体器件包括：硅衬底; 以及设置在硅衬底上的氧化硅膜。氧化硅膜包括从硅衬底的表面分离的部分，使得氧化硅膜提供三维结构。通过使用三维构造，在该装置中容易添加诸如电阻器或电容器的附加功能。此外，该三维构造的制造方法简单，成本低。

4. 发明授权

US08154073B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08154073B2
公开(公告)日：2012-04-10
申请号：US11826206
申请日：2007-07-12
申请人： Takaaki Aoki , Tetsuo Fujii , Tomofusa Shiga
发明人： Takaaki Aoki , Tetsuo Fujii , Tomofusa Shiga
IPC分类号： H01L29/80
CPC分类号： H01L29/7813 , H01L29/0696 , H01L29/4236 , H01L29/42368 , H01L29/66666 , H01L29/66734 , H01L29/7803 , H01L29/7806 , H01L29/7811 , H01L29/7828 , H01L29/8083
摘要： A semiconductor device includes: a semiconductor substrate; a vertical type trench gate MOS transistor; a Schottky barrier diode; multiple trenches having a stripe pattern to divide an inner region into first and second separation regions; and a poly silicon film in each trench. The first separation region includes a first conductive type region for providing a source and a second conductive type layer for providing a channel region. The first conductive type region is adjacent to a first trench. The poly silicon film in the first trench is coupled with a gate wiring. A second trench is not adjacent to the first conductive type region. The poly silicon film in the second trench is coupled with a source or gate wiring. The substrate in the second separation region is coupled with the source wiring for providing a Schottky barrier.
摘要翻译：半导体器件包括：半导体衬底; 垂直型沟槽栅极MOS晶体管; 肖特基势垒二极管; 多个沟槽具有条纹图案以将内部区域分成第一和第二分离区域; 和每个沟槽中的多晶硅膜。第一分离区域包括用于提供源极的第一导电类型区域和用于提供沟道区域的第二导电类型层。第一导电类型区域与第一沟槽相邻。第一沟槽中的多晶硅膜与栅极布线耦合。第二沟槽不与第一导电类型区域相邻。第二沟槽中的多晶硅膜与源极或栅极布线耦合。第二分离区域中的衬底与用于提供肖特基势垒的源极配线耦合。

5. 发明授权

US07622768B2 Semiconductor device and method of manufacturing thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07622768B2
公开(公告)日：2009-11-24
申请号：US11110826
申请日：2005-04-21
申请人： Takaaki Aoki , Mikimasa Suzuki , Yukio Tsuzuki , Tomofusa Shiga
发明人： Takaaki Aoki , Mikimasa Suzuki , Yukio Tsuzuki , Tomofusa Shiga
IPC分类号： H01L21/336
CPC分类号： H01L29/7813 , H01L29/42368 , H01L29/511 , H01L29/66348 , H01L29/7397
摘要： On the surface of a silicon nitride film, there is formed a thermal oxide film, over which a CVD oxide film is then formed to provide a silicon oxide film of two-layered structure films. Moreover, the total thickness of the two-layered structure films is set to a value from 5 nm to 30 nm. Thus, the silicon oxide film is made into the two-layered structure films of the thermal oxide film and the CVD oxide film to thereby achieve the thickness of the silicon oxide film. As a result, it is possible to prevent a Vth from being lowered by a charge trap phenomenon and to prevent the Vth from fluctuating due to the enlargement of the bird's beak length by the silicon oxide film.
摘要翻译：在氮化硅膜的表面上形成热氧化膜，然后在其上形成CVD氧化膜，以提供两层结构膜的氧化硅膜。此外，将两层结构膜的总厚度设定为5nm〜30nm的值。因此，将氧化硅膜制成热氧化膜和CVD氧化物膜的两层结构膜，从而实现氧化硅膜的厚度。结果，可以通过电荷陷阱现象防止Vth降低，并且防止由于氧化硅膜的鸟喙长度的增大而导致的Vth波动。

6. 发明授权

US07211987B2 Electric device with intelligent battery system therein 有权
标题翻译：具有智能电池系统的电器
公开(公告)号：US07211987B2
公开(公告)日：2007-05-01
申请号：US10245641
申请日：2002-09-17
申请人： Takaaki Aoki , Masaki Kobayashi , Atsushi Kumaki , Takeshi Matsumoto , Shigefumi Odaohhara , Mizuho Tadokoro
发明人： Takaaki Aoki , Masaki Kobayashi , Atsushi Kumaki , Takeshi Matsumoto , Shigefumi Odaohhara , Mizuho Tadokoro
IPC分类号： H02J7/00 , G01N27/42
CPC分类号： H01M10/44 , G01R31/3624 , G01R31/3675 , G01R31/3679 , H01M10/425 , H01M10/48 , H01M10/486 , H02J7/0047 , H02J2007/0098
摘要： A computer provided with an intelligent battery 52 for charging/discharging, the intelligent battery 52 supplying power to a main system unit, wherein the intelligent battery 52 includes: a voltage measuring circuit 70 for measuring a battery voltage of the intelligent battery 52; a current measuring circuit 63 for measuring a charging/discharging current of the intelligent battery 52; a temperature measuring circuit 90 for measuring a temperature of the intelligent battery 52; and a CPU 62 for periodically reading the battery voltage measured by the voltage measuring circuit 70, the charging/discharging current measured by the current measuring circuit 63, and the temperature measured by the temperature measuring circuit 90 so as to manage a capacity deterioration of the battery due to a storage deterioration and a cycle deterioration, and wherein the main system unit includes an embedded controller 41 for receiving information about the capacity deterioration from the CPU 62 of the battery.
摘要翻译：智能电池52包括：用于测量智能电池52的电池电压的电压测量电路70，该智能电池52具有用于充电/放电的智能电池52，智能电池52向主系统单元供电。用于测量智能电池52的充电/放电电流的电流测量电路63; 用于测量智能电池52的温度的温度测量电路90; 以及用于周期性地读取由电压测量电路70测量的电池电压的CPU 62，由电流测量电路63测量的充电/放电电流以及由温度测量电路90测量的温度，以便管理电容器劣化电池由于存储恶化和循环恶化，并且其中主系统单元包括用于从电池的CPU62接收关于容量恶化的信息的嵌入式控制器41。

7. 发明申请

US20050236664A1 Semiconductor device and method of manufacturing thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050236664A1
公开(公告)日：2005-10-27
申请号：US11110826
申请日：2005-04-21
申请人： Takaaki Aoki , Mikimasa Suzuki , Yukio Tsuzuki , Tomofusa Shiga
发明人： Takaaki Aoki , Mikimasa Suzuki , Yukio Tsuzuki , Tomofusa Shiga
IPC分类号： H01L29/78 , H01L21/331 , H01L21/336 , H01L21/8247 , H01L27/115 , H01L29/423 , H01L29/51 , H01L29/739
CPC分类号： H01L29/7813 , H01L29/42368 , H01L29/511 , H01L29/66348 , H01L29/7397
摘要： On the surface of a silicon nitride film, there is formed a thermal oxide film, over which a CVD oxide film is then formed to provide a silicon oxide film of two-layered structure films. Moreover, the total thickness of the two-layered structure films is set to a value from 5 nm to 30 nm. Thus, the silicon oxide film is made into the two-layered structure films of the thermal oxide film and the CVD oxide film to thereby achieve the thickness of the silicon oxide film. As a result, it is possible to prevent a Vth from being lowered by a charge trap phenomenon and to prevent the Vth from fluctuating due to the enlargement of the bird's beak length by the silicon oxide film.
摘要翻译：在氮化硅膜的表面上形成热氧化膜，然后在其上形成CVD氧化膜，以提供两层结构膜的氧化硅膜。此外，将两层结构膜的总厚度设定为5nm〜30nm的值。因此，将氧化硅膜制成热氧化膜和CVD氧化物膜的两层结构膜，从而实现氧化硅膜的厚度。结果，可以通过电荷陷阱现象防止Vth降低，并且防止由于氧化硅膜的鸟喙长度的增大而导致的Vth波动。

8. 发明申请

US20050090060A1 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20050090060A1
公开(公告)日：2005-04-28
申请号：US10974838
申请日：2004-10-28
申请人： Takaaki Aoki , Yutaka Tomatsu , Akira Kuroyanagi , Mikimasa Suzuki , Hajime Soga , Takafumi Arakawa , Yukio Tsuzuki
发明人： Takaaki Aoki , Yutaka Tomatsu , Akira Kuroyanagi , Mikimasa Suzuki , Hajime Soga , Takafumi Arakawa , Yukio Tsuzuki
IPC分类号： H01L21/28 , H01L21/331 , H01L21/336 , H01L29/423 , H01L29/51 , H01L29/739 , H01L29/78
CPC分类号： H01L29/7813 , H01L21/28194 , H01L21/28202 , H01L21/28211 , H01L29/42368 , H01L29/511 , H01L29/513 , H01L29/518 , H01L29/66348 , H01L29/7397
摘要： A trench-gate type transistor has a gate insulating film formed on an inner wall of a trench. The gate insulating film includes a first portion located on a wall of the trench and a second portion located on upper and bottom portions of the trench. The first portion includes a first oxide film, a nitride film, and a second oxide film. The second portion includes only an oxide film and is thicker than the first portion. Accordingly, electric field concentration on upper and lower corner portions of the trench can be reduced to improve the withstand voltage. In addition, and end of the trench may have an insulation layer that is thicker than the first portion.
摘要翻译：沟槽栅型晶体管具有形成在沟槽的内壁上的栅极绝缘膜。栅极绝缘膜包括位于沟槽的壁上的第一部分和位于沟槽的上部和底部的第二部分。第一部分包括第一氧化膜，氮化物膜和第二氧化物膜。第二部分仅包括氧化膜并且比第一部分厚。因此，可以减小沟槽的上下角部的电场集中以提高耐压。此外，沟槽的端部可以具有比第一部分更厚的绝缘层。

9. 发明授权

US4527332A Handy scissors 失效
标题翻译：方便剪刀
公开(公告)号：US4527332A
公开(公告)日：1985-07-09
申请号：US554499
申请日：1983-11-23
申请人： Takaaki Aoki
发明人： Takaaki Aoki
IPC分类号： B26B13/18 , B26B27/00 , B26B13/08 , B26B13/10
CPC分类号： B26B13/18 , B26B27/00
摘要： This invention relates to a pair of handy scissors for readily cutting paper, cloth, thread, synthetic resin films and other sheet-like or linear materials in doing paper craftwork or needlework or opening packing bags. The scissors are constructed in the following manner: A parting line of predetermined length is cut in a springy metal sheet of uniform thickness to form cut edges in the form of cut surfaces each crossing the planar surface of the metal sheet at an acute angle, the cut edges as such serving as a pair of cutting edges for shearing an object, the half portions of the metal sheet bisected by the cutting of the parting line being bent in vertically opposite directions along a pair of bending lines on the planar surface so that they are normally in a horizontally V-shaped opened state and are in such a relation as to cross the parting line at an obtuse angle, while a pair of opposed operating levers are attached to the half portions for closing the half portions against the spring force of the metal sheet so as to shear an object by the mutual rubbing action of the cutting edges.
摘要翻译：本发明涉及一种方便的剪刀，用于在进行纸工艺或针线或打开包装袋时容易地切割纸，布，线，合成树脂膜和其它片状或线状材料。剪刀以如下方式构造：将均匀厚度的弹性金属片切割成预定长度的分割线，以形成切割面的切割边缘，每个切割表面以锐角与金属片材的平坦表面交叉，切割边缘用作用于剪切物体的一对切割刃，通过分割线的切割而平分的金属片的半部沿着平面上的一对弯曲线沿垂直相反的方向弯曲，使得它们通常处于水平V形打开状态，并且处于与钝角相交的关系，同时一对相对的操作杆附接到半部以克服弹簧的力金属片材，以便通过切削刃的相互摩擦作用来剪切物体。

10. 发明授权

US4502220A Hand-held type opening and closing action tool 失效
标题翻译：手持式开合动作工具
公开(公告)号：US4502220A
公开(公告)日：1985-03-05
申请号：US448602
申请日：1982-12-10
申请人： Takaaki Aoki
发明人： Takaaki Aoki
IPC分类号： B26B13/00 , B26B13/14
CPC分类号： B26B13/14 , B26B13/005
摘要： The present invention relates to a hand-held type opening and closing action tool in the form having front active pieces for cutting and other operations adapted to perform opening and closing motion around the axis of a pivot, as found in manual sharp-edged tools and manual tools, such as scissors, pliers, nippers, and strippers. The tool comprises a hand-holdable cover case formed with an elongated guide hole, opening and closing operation levers pivotally mounted on the case and normally resiliently urged in the direction to spread out from the case, and front active pieces operatively connected to the levers to bear the resilient force on the levers and adapted to be opened and closed by the levers, the arrangement being such that the levers are prostrated into the sunken state in the case against the resilient force and in this state the pivot of the pieces is slid along the elongated guide hole of the case, whereby the pieces are also received in the case in the sunken state.
摘要翻译：本发明涉及一种具有用于切割的前活动件和其他操作的手持式打开和关闭动作工具，其适于围绕枢轴的轴线执行打开和关闭运动，如在手动锋利的工具中所发现的，以及手动工具，如剪刀，钳子，钳子和剥线钳。该工具包括形成有细长导向孔的手持式盖壳，可旋转地安装在壳体上的开闭操作杆，并且通常沿着从壳体展开的方向弹性地推动，并且前活动件可操作地连接到杠杆到在杠杆上承受弹性力并且被杠杆打开和关闭，这种布置使得在抵抗弹性力的情况下，杠杆被拉入凹陷状态，并且在该状态下，各块的枢轴沿着壳体的细长引导孔，从而这些片也被接收在处于凹陷状态的壳体中。

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