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1. 发明专利

DE60037057T2 未知
公开(公告)号：DE60037057T2
公开(公告)日：2008-09-04
申请号：DE60037057
申请日：2000-03-09
申请人： EBARA CORP , TOSHIBA KAWASAKI KK
发明人： HOMMA SOICHI , MIYATA MASAHIRO , EZAWA HIROKAZU , YOSHIOKA JUNICHIRO , INOUE HIROAKI , TOKUOKA TSUYOSHI
IPC分类号： H01L23/52 , H01L23/532 , H01L21/3205 , H01L21/60 , H01L23/485
摘要： The present semiconductor element comprises a semiconductor substrate, a wiring pad formed thereon, a layer of barrier metal formed thereon, an intermetallic compound Ag3Sn formed thereon, and a protruded electrode consisting of low-melting metal formed thereon. In addition, a fabricating method of a semiconductor element comprises the steps of forming a wiring pad on a semiconductor substrate, forming a layer of barrier metal thereon, forming a metallic layer containing Ag thereon, forming a layer of low-melting metal containing Sn thereon, and melting the layer of low-melting metal containing Sn to form a protruded electrode and simultaneously to form an intermetallic compound Ag3Sn at an interface between the metallic layer containing Ag and the layer of low-melting metal containing Sn. Thus, with Pb-free solder, a semiconductor element of high reliability can be obtained.

2. 发明专利

DE69425348D1 未知
公开(公告)号：DE69425348D1
公开(公告)日：2000-08-31
申请号：DE69425348
申请日：1994-05-27
申请人： TOSHIBA KAWASAKI KK , EBARA CORP
发明人： MIYATA MASAHIRO , EZAWA HIROKAZU , OGURE NAOAKI , TSUJIMURA MANABU , OHDAIRA TAKEYUKI , INOUE HIROAKI , IKEDA YUKIO
IPC分类号： H01L23/52 , H01L21/3205 , H01L21/768 , H01L23/532

3. 发明专利

DE60037057D1 未知
公开(公告)号：DE60037057D1
公开(公告)日：2007-12-27
申请号：DE60037057
申请日：2000-03-09
申请人： EBARA CORP , TOSHIBA KAWASAKI KK
发明人： HOMMA SOICHI , MIYATA MASAHIRO , EZAWA HIROKAZU , YOSHIOKA JUNICHIRO , INOUE HIROAKI , TOKUOKA TSUYOSHI
IPC分类号： H01L23/52 , H01L23/532 , H01L21/3205 , H01L21/60 , H01L23/485
摘要： The present semiconductor element comprises a semiconductor substrate, a wiring pad formed thereon, a layer of barrier metal formed thereon, an intermetallic compound Ag3Sn formed thereon, and a protruded electrode consisting of low-melting metal formed thereon. In addition, a fabricating method of a semiconductor element comprises the steps of forming a wiring pad on a semiconductor substrate, forming a layer of barrier metal thereon, forming a metallic layer containing Ag thereon, forming a layer of low-melting metal containing Sn thereon, and melting the layer of low-melting metal containing Sn to form a protruded electrode and simultaneously to form an intermetallic compound Ag3Sn at an interface between the metallic layer containing Ag and the layer of low-melting metal containing Sn. Thus, with Pb-free solder, a semiconductor element of high reliability can be obtained.

4. 发明专利

DE69425348T2 未知
公开(公告)号：DE69425348T2
公开(公告)日：2001-01-25
申请号：DE69425348
申请日：1994-05-27
申请人： TOSHIBA KAWASAKI KK , EBARA CORP
发明人： MIYATA MASAHIRO , EZAWA HIROKAZU , OGURE NAOAKI , TSUJIMURA MANABU , OHDAIRA TAKEYUKI , INOUE HIROAKI , IKEDA YUKIO
IPC分类号： H01L23/52 , H01L21/3205 , H01L21/768 , H01L23/532

5. 发明专利

DE3886341D1 未知
公开(公告)号：DE3886341D1
公开(公告)日：1994-01-27
申请号：DE3886341
申请日：1988-10-21
申请人： TOSHIBA KAWASAKI KK
发明人： ENDO TAKASHI , EZAWA HIROKAZU
IPC分类号： H01L21/60 , H01L23/485 , H01L23/532 , H01L23/48
摘要： A semiconductor device having a bump electrode (16) on a semiconductor substrate (11) above an electrode pad (12) and metal film (14a). The shape of the bump electrode (16) is composed of a cubical portion and a skirt (16a) extending outward from the bottom of the cubical portion. In manufacturing such a semiconductor device, a dry film is used which is laminated on the metal film (14a) under a certain laminating condition and formed with an opening. A bump material is formed as a deposit on the metal film (14a) within the opening, through electrolytic plating. The deposit has the cubical portion corresponding in shape to the opening, and the skirt (16a) extending outward into a space between the dry film and the metal film (14a), from the bottom of the cubical portion. The metal film (14a) is etched out using the deposit as a mask to thereby make the deposit as a bump electrode (16) of the semiconductor device.

6. 发明专利

DE3886341T2 未知
公开(公告)号：DE3886341T2
公开(公告)日：1994-05-11
申请号：DE3886341
申请日：1988-10-21
申请人： TOSHIBA KAWASAKI KK
发明人： ENDO TAKASHI , EZAWA HIROKAZU
IPC分类号： H01L21/60 , H01L23/485 , H01L23/532 , H01L23/48
摘要： A semiconductor device having a bump electrode (16) on a semiconductor substrate (11) above an electrode pad (12) and metal film (14a). The shape of the bump electrode (16) is composed of a cubical portion and a skirt (16a) extending outward from the bottom of the cubical portion. In manufacturing such a semiconductor device, a dry film is used which is laminated on the metal film (14a) under a certain laminating condition and formed with an opening. A bump material is formed as a deposit on the metal film (14a) within the opening, through electrolytic plating. The deposit has the cubical portion corresponding in shape to the opening, and the skirt (16a) extending outward into a space between the dry film and the metal film (14a), from the bottom of the cubical portion. The metal film (14a) is etched out using the deposit as a mask to thereby make the deposit as a bump electrode (16) of the semiconductor device.

7. 发明专利

JP2002226974A ELECTROLESS Ni-B PLATING SOLUTION, ELECTRONIC DEVICE, AND MANUFACTURING METHOD THEREOF 失效
公开(公告)号：JP2002226974A
公开(公告)日：2002-08-14
申请号：JP2001034428
申请日：2001-02-09
申请人： EBARA CORP , EBARA UDYLITE KK , TOSHIBA CORP
发明人： INOUE HIROAKI , NAKAMURA KENJI , MATSUMOTO MORIHARU , EZAWA HIROKAZU , MIYATA MASAHIRO , TSUJIMURA MANABU
IPC分类号： C23C18/16 , C23C18/34 , C23C18/50 , H01L21/288 , H01L21/3205 , H01L23/52
摘要： PROBLEM TO BE SOLVED: To reduce the contents of boron in a plating film without increasing a deposition rate and to deposit an Ni-B alloy film of a fcc crystal structure. SOLUTION: The plating solution is used for depositing the Ni-B alloy film by electroless plating at least on a part of the wiring of electronic device equipment having buried wiring structure and contains a nickel ion, a complexing agent for the nickel ion, alkylamine borane or borohydride compound as a reducing agent for the nickel ion, and an ammonia ion (NH4+).

8. 发明专利

JPH1192997A METHOD FOR FILLING LIQUID INTO MINUTE HOLE, STRAIGHT LOW MELTING POINT SOLDER BUMP PLATING METHOD AND DEVICE THEREFOR 失效
公开(公告)号：JPH1192997A
公开(公告)日：1999-04-06
申请号：JP26933997
申请日：1997-09-16
申请人： EBARA CORP , TOSHIBA CORP
发明人： INOUE HIROAKI , YOSHIOKA JUNICHIRO , EZAWA HIROKAZU , MIYATA MASAHIRO
IPC分类号： B23K35/26 , C25D5/02 , C25D7/12 , H01L21/60 , H05K3/34
摘要： PROBLEM TO BE SOLVED: To provide a low melting point solder bump plating method and device by which the bump is formed surely and with good throughput when the straight low melting point solder bump using a thick film resist is formed by the electroplating, and further, to provide a method for filling a liquid into a minute hole by which the liquid for use in the plating treatment is easily filled into the minute hole provided on a surface of a base material. SOLUTION: An electrolytic plating liq. 130 is filled into the minute hole 121 provided inside the thick film resist 120 laminated on the surface of the base material 100 by immersing the surface of the base material 100 into the electrolytic plating liq. 130 which a surface tension of

9. 发明专利

JPH07130736A SEMICONDUCTOR DEVICE AND ITS MANUFACTURE 失效
公开(公告)号：JPH07130736A
公开(公告)日：1995-05-19
申请号：JP6093394
申请日：1994-03-30
申请人： TOSHIBA CORP , EBARA CORP
发明人： MIYATA MASAHIRO , EZAWA HIROKAZU , KOGURE NAOAKI , TSUJIMURA MANABU , OHIRA TAKEMASA , INOUE HIROAKI , IKEDA YUKIO
IPC分类号： H01L23/52 , H01L21/3205 , H01L21/768 , H01L23/532
摘要： PURPOSE:To form a wiring of lower resistance than alminum with ease, relating to a semiconductor device containing a multilayer wiring structure. CONSTITUTION:For example, an insulation film 12 is deposited on a silicon substrate 11, and on the insulation film 12, a groove 13 formed according to a specified wiring pattern. On it, titan and palladium are sequentially deposited, so that a titan film 14 and a palladium film 15 are formed. Further, over it, a silver film 16 is deposited by electroplating, and a groove-like wire 17 is formed by polishing. Then, by annealing at about 700 deg.C, the titan film 14 and palladium film 15 are alloyed together so that an intermetallic compound is 18 formed. With this, a wiring of multilayer structure whose resistance is lower than alminum is obtained.

10. 发明专利

JPH06108285A SEMICONDUCTOR WAFER PLATING JIG 失效
公开(公告)号：JPH06108285A
公开(公告)日：1994-04-19
申请号：JP11659091
申请日：1991-04-22
申请人： TOSHIBA CORP , EBARA CORP
发明人： EZAWA HIROKAZU , YODA TAKASHI , TSUJIMURA MANABU , KANAYAMA TAKUYA
IPC分类号： C25D5/02 , C25D7/12 , C25D17/08 , H01L21/288 , H01L21/68 , H01L21/683
摘要： PURPOSE:To stably plate semiconductor wafers for a long time by providing a cathode contact on the surface of the semiconductor wafer, which is sealed with a seal member and is not brought into contact with plating liquid, to prevent the plating liquid from being deposited in the front end part of the cathode contact. CONSTITUTION:A semiconductor wafer 1 is held by holding members 3 and 4 and is immersed in the plating liquid and is plated. A seal member 5 is arranged on these holding members 3 and 4 so that the plating liquid does not flow to parts other than the face to be plated of the semiconductor wafer 1. A cathode contact 7 connected to a cathode wiring 11 is provided in a resist peeled part 6 in the end face part, of the sealed semiconductor wafer 1. Thus, the cathode contact 7 is not brought into contact with the plating liquid, and semiconductor wafers are stably plated without deterioration for a long time.

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