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1. 发明专利

JPH07130736A SEMICONDUCTOR DEVICE AND ITS MANUFACTURE 失效
公开(公告)号：JPH07130736A
公开(公告)日：1995-05-19
申请号：JP6093394
申请日：1994-03-30
申请人： TOSHIBA CORP , EBARA CORP
发明人： MIYATA MASAHIRO , EZAWA HIROKAZU , KOGURE NAOAKI , TSUJIMURA MANABU , OHIRA TAKEMASA , INOUE HIROAKI , IKEDA YUKIO
IPC分类号： H01L23/52 , H01L21/3205 , H01L21/768 , H01L23/532
摘要： PURPOSE:To form a wiring of lower resistance than alminum with ease, relating to a semiconductor device containing a multilayer wiring structure. CONSTITUTION:For example, an insulation film 12 is deposited on a silicon substrate 11, and on the insulation film 12, a groove 13 formed according to a specified wiring pattern. On it, titan and palladium are sequentially deposited, so that a titan film 14 and a palladium film 15 are formed. Further, over it, a silver film 16 is deposited by electroplating, and a groove-like wire 17 is formed by polishing. Then, by annealing at about 700 deg.C, the titan film 14 and palladium film 15 are alloyed together so that an intermetallic compound is 18 formed. With this, a wiring of multilayer structure whose resistance is lower than alminum is obtained.

2. 发明专利

JPH1197444A BARRIER LAYER FOR SEMICONDUCTOR SUBSTRATE WIRING 失效
公开(公告)号：JPH1197444A
公开(公告)日：1999-04-09
申请号：JP27049297
申请日：1997-09-17
申请人： EBARA CORP , TOSHIBA CORP
发明人： KOGURE NAOAKI , INOUE HIROAKI , EZAWA HIROKAZU , MIYATA MASAHIRO
IPC分类号： H01L21/28 , C23C18/31 , C25D7/12 , H01L21/3205 , H01L23/52
摘要： PROBLEM TO BE SOLVED: To employ a material that has a strong junction to wiring material and low resistivity and prevent a counter diffusion between insulation films, by using Ni-alloy member containing B (Boron) for a barrier layer between wiring and an adjoining insulation. SOLUTION: A barrier layer 11 is formed in an inner surface of a groove on an insulative SiO2 film 10 that is formed on a semiconductor substrate. A wiring layer 12 that is made of Cu or Cu-alloy is formed in a groove surrounded by the barrier layer 11. The barrier layer 11 comprises Ni-B alloy member containing B. A B-content of the Ni-B alloy is 10 at%. At the content, Ni-B alloy material has the highest density fill crystal structure around annealing and a barrier function of Cu that is used for material of the wiring layer.

3. 发明专利

JPH10217103A DRESSER OF CLOTH FOR POLISHING AND ITS MANUFACTURE 失效
公开(公告)号：JPH10217103A
公开(公告)日：1998-08-18
申请号：JP3987097
申请日：1997-02-07
申请人： EBARA CORP , TOSHIBA CORP
发明人： NAGASAKA HIROSHI , SUMIYA MOMOKO , TATEISHI KUNIO , KOGURE NAOAKI , YODA TAKASHI
IPC分类号： B24B53/017 , B24B53/12 , B24D18/00 , H01L21/304 , B24B37/00
摘要： PROBLEM TO BE SOLVED: To prevent falling of diamond particulates during polishing by forming a large number of peaked projected parts on a surface of a metal base body and constituting at least the surface where the projected parts are formed of the metal base body to be covered with an abrasion resistant hard film. SOLUTION: A large number of projected parts 3 are formed on a surface 2 of a metal base body 1 by machining, and the surface 2 where the projected parts 3 are formed is covered with an abrasion resistant hard film 4. As a materia of the abrasion resistant hard film 4, fiber metal nitride to be represented by titanium nitride, nitride ceramics to be represented by boron nitride and carbon nitride, carbide ceramics to be represented by chrome carbide and boron carbide, ceramics of diamond-like carbon, etc., or the like are optimum. Composite ceramics, etc., composing more than two kinds of ceramics are also optimum for improvement of film characteristics related with anticorrosion and abrasion resistance.

4. 发明专利

JP2008063668A Composite nanoparticle 审中-公开
标题翻译：复合纳米材料
公开(公告)号：JP2008063668A
公开(公告)日：2008-03-21
申请号：JP2007297680
申请日：2007-11-16
申请人： Ebara Corp , 株式会社荏原製作所
发明人： CHIKAMORI YUSUKE , KOGURE NAOAKI
IPC分类号： B22F1/00 , B22F1/02 , H01B5/00
摘要： PROBLEM TO BE SOLVED: To provide a composite nanoparticle which makes it possible to significantly lower the temperature to separate an organic substance from a metal core and uniformly sinter the metal cores or significantly lower the temperature to separate an organic substance from a core comprising an inorganic metal compound and metallize the cores, and which can be applied to bonding that replaces solder bonding.
SOLUTION: The composite nanoparticle is produced by allowing silver carbonate and myristyl alcohol to coexist, and heating them at a temperature T(°C) of 70 to -3 ≤7.98 is valid, and while avoiding reaction of the silver with the organic substance resulting in formation of an organometallic compound, the organic substance is linked to the periphery of the core. When TG measurement is performed to the particle, during the heating, the rapid decrease in the weight of the particle starts at 140 to
摘要翻译：要解决的问题：提供一种复合纳米颗粒，其使得可以显着降低温度以从金属芯分离有机物质并均匀地烧结金属芯或显着降低温度以从芯分离有机物质包括无机金属化合物并对芯进行金属化，并且可以应用于替代焊料接合的接合。解决方案：通过使碳酸银和肉豆蔻醇共存并在70℃至<140℃的温度T（℃）下加热复合纳米颗粒一段时间t（h）来制备复合纳米颗粒，其中不等式）：7.85≤（T + 273）（20 + logt）×10 -3 ≤7.98有效，同时避免银与有机物质的反应，形成有机金属化合物，有机物质与核心的周边连接。当对颗粒进行TG测量时，在加热期间，颗粒重量的快速下降从140至<190℃开始，最后剩余的银组分的含量为50-99％。版权所有（C）2008，JPO＆INPIT

5. 发明专利

JP2006181641A Bonding apparatus and bonding method 审中-公开
标题翻译：连接装置和接合方法
公开(公告)号：JP2006181641A
公开(公告)日：2006-07-13
申请号：JP2005332752
申请日：2005-11-17
申请人： Ebara Corp , 株式会社荏原製作所
发明人： TATEISHI HIDEKI , CHIKAMORI YUSUKE , KOGURE NAOAKI , FUKUNAGA YUKIO , KAMIYAMA HIROYUKI
IPC分类号： B23K20/00 , B23K20/14 , B23K20/24 , B23K101/36 , B23K103/12
CPC分类号： B23K20/023 , B23K2201/40
摘要： PROBLEM TO BE SOLVED: To provide a practical technology for direct bonding of contacts of electronic components with each other without using any solder.
SOLUTION: A bonding apparatus includes a hermetically sealed processing chamber 10, a plurality of bases 30, 32 for holding at least two workpieces W having respective bonding regions 46 in a processing chamber, a gas inlet for introducing a processing gas to clean the bonding regions into the processing chamber, a pressure controller 20 for controlling a predetermined pressure to be developed in the processing chamber, a heater 38 for heating the workpieces in the processing chamber, and a bonding unit 36 for pressing and bonding the bonding regions of the workpieces to each other in the processing chamber. Since the bonding regions are pressed and bonded with each other in the cleaned processing chamber, bonding of firm and high durability can be performed while preventing oxidation and degradation caused by pollution of the cleaned surface of the bonding regions.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种用于将电子部件的触点彼此直接接合而不使用任何焊料的实用技术。解决方案：接合装置包括密封处理室10，多个基座30,32，用于在处理室中保持具有各自的接合区域46的至少两个工件W，用于引入处理气体以进行清洁的气体入口进入处理室的接合区域，用于控制在处理室中显影的预定压力的压力控制器20，用于加热处理室中的工件的加热器38，以及用于将接合区域工件在处理室中彼此相连。由于接合区域在清洁处理室中被压接并彼此接合，所以可以在防止由于粘合区域的被清洁表面的污染引起的氧化和劣化的同时进行牢固且高耐久性的结合。版权所有（C）2006，JPO＆NCIPI

6. 发明专利

JP2005089789A Electrode in liquid, and its production method 审中-公开
标题翻译：液体电极及其生产方法
公开(公告)号：JP2005089789A
公开(公告)日：2005-04-07
申请号：JP2003322044
申请日：2003-09-12
申请人： Ebara Corp , 株式会社荏原製作所
发明人： KOGURE NAOAKI , TSUJIMURA MANABU
IPC分类号： C02F1/46 , C02F1/461 , C25B11/06 , C25B11/12
摘要： PROBLEM TO BE SOLVED: To provide a compact electrode capable of performing treatment to a high-volume liquid at a high speed, and to provide a liquid treatment device and a liquid treatment method using the electrode.
SOLUTION: The electrode comprises: (1) an electrically conductive base material; (2) a coating layer coating the electrically conductive base material; and (3) electrically conductive diamond particles fixed to the coating layer, and in which a part of each electrically conductive diamond particle comes into contact with the electrically conductive material, and the other one part is exposed to the surface of the coating layer. By the method, the compact electrode capable of treating a high-volume liquid at a high speed can be obtained. Further, by using the liquid treatment device provided with the electrode, the compact treatment device of high performance can be provided. Further, by using the liquid treatment method in the invention, a high-volume liquid can be treated at a high speed.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种能够高速地对大容积液体进行处理的紧凑型电极，并且提供使用该电极的液体处理装置和液体处理方法。电极包括：（1）导电基材; （2）涂覆导电性基材的涂层; 和（3）固定到涂层的导电金刚石颗粒，并且其中每个导电金刚石颗粒的一部分与导电材料接触，另一个部分暴露于涂层的表面。通过该方法，可以获得能够高速处理高容量液体的致密电极。此外，通过使用设置有电极的液体处理装置，可以提供高性能的紧凑处理装置。此外，通过使用本发明的液体处理方法，可以高速处理大容量的液体。版权所有（C）2005，JPO＆NCIPI

7. 发明专利

JP2004177348A Method for detecting nucleic acid or protein with ultra-high sensitivity, detecting agent, and detection apparatus 审中-公开
标题翻译：用于检测具有超高灵敏度的核酸或蛋白质的方法，检测试剂和检测装置
公开(公告)号：JP2004177348A
公开(公告)日：2004-06-24
申请号：JP2002346260
申请日：2002-11-28
申请人： Ebara Corp , 株式会社荏原製作所
发明人： NAGASAWA HIROSHI , KOGURE NAOAKI , NOMICHI SHINJI , ABE YUJI
IPC分类号： G01N33/58 , C12M1/00 , C12Q1/68 , G01N21/77 , G01N21/78 , G01N33/53 , G01N33/566
摘要： PROBLEM TO BE SOLVED: To provide a method and an agent for ultra-high sensitivity detecting trace amounts of nucleic acids or proteins.
SOLUTION: In the ultra-high sensitivity detection method, previously prepared nanoparticles of metal are made to act on the trace amounts of nucleic acids or proteins, labeled with fluorescence and trapped by an affinity method. By enhancing the action of fluorescence, the sensitivity of the fluorescence affinity method is increased. In addition, the detecting agent, including the nanoparticles of metal used for the method, is acquired.
COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供用于超高灵敏度检测微量核酸或蛋白质的方法和试剂。解决方案：在超高灵敏度检测方法中，使预先制备的金属纳米颗粒作用于痕量的核酸或蛋白质，用荧光标记并通过亲和法捕获。通过增强荧光的作用，增加了荧光亲和法的灵敏度。此外，获得包括用于该方法的金属纳米颗粒的检测剂。版权所有（C）2004，JPO

8. 发明专利

JP2004146695A Metallization device 审中-公开
公开(公告)号：JP2004146695A
公开(公告)日：2004-05-20
申请号：JP2002311732
申请日：2002-10-25
申请人： Ebara Corp , 株式会社荏原製作所
发明人： KOGURE NAOAKI , NAGASAWA HIROSHI , MIKOJIMA KAORI , CHIKAMORI YUSUKE
IPC分类号： H01L21/60
CPC分类号： H01L2224/29339 , H01L2224/8384 , H01L2924/01019 , H01L2924/01046 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/014
摘要： PROBLEM TO BE SOLVED: To provide a metallization device that can be used instead of a conventional step type micro-soldering and uses almost no lead or tin, and surely realizes such bonding or the like that eliminates environmental load due to heavy metal contamination by metallizing a bonding material.
SOLUTION: The metallization device heats and bakes a bonding material wherein a compound metallic nano particles that are generated by bonding/covering the periphery of a metallic nuclei comprising metallic particles with an organic substance is dispersed in a solvent, and decomposes/evaporates the organic substance and generates sintering of the metallic particles to metallize the bonding material. Furthermore, it is provided with at least either of an inertial force energy application device 22 to give an inertial force energy to the bonding material and a deaerator 34 to degasify a chamber 10 that houses the bonding material and is sealed.
COPYRIGHT: (C)2004,JPO

9. 发明专利

JP2004107728A Joining material and joining method 审中-公开
公开(公告)号：JP2004107728A
公开(公告)日：2004-04-08
申请号：JP2002272364
申请日：2002-09-18
申请人： Ebara Corp , 株式会社荏原製作所
发明人： NAGASAWA HIROSHI , MIKOJIMA KAORI , KOGURE NAOAKI , HIROSE MASAYOSHI
IPC分类号： B23K35/22 , B22F1/02 , B22F9/24
CPC分类号： H01L2224/29339 , H01L2224/29344 , H01L2224/29347 , H01L2224/29355 , H01L2224/29364 , H01L2224/8384 , H01L2924/01046 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/01322 , H01L2924/01327 , H01L2924/014 , H01L2924/203 , H01L2924/00 , H01L2924/0002
摘要： PROBLEM TO BE SOLVED: To provide a joining material and a joining method used for joining two or more parts particularly using composite type metal nano-particles as for a joining material and a joining method used for mutually joining various electronic parts such as a semiconductor device or various parts such as machine parts. SOLUTION: Composite type metal nano-particles obtained by joining and coating the surroundings of nuclei consisting of metal particles having a mean particle diameter of about ≤100 nm with an organic matter consisting essentially of C, H and/or O are used as the main components for joining. COPYRIGHT: (C)2004,JPO

10. 发明专利

JP2002261088A CVD DEVICE 失效
公开(公告)号：JP2002261088A
公开(公告)日：2002-09-13
申请号：JP2001060219
申请日：2001-03-05
申请人： EBARA CORP
发明人： HORIE KUNIAKI , KOGURE NAOAKI , ARAKI YUJI
IPC分类号： C23C16/455 , H01L21/285 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To provide a CVD device which is suitable for rapidity of process development and realizes film formation which is excellent in coverage in a low temperature rapid film formation process and excellent in uniformity by eliminating problems of a single-wafer basis CVD device and a batch type CVD device. SOLUTION: In a CVD device, a gas injection head 11 is provided, process gas is injected from the head 11 to a substrate 14 arranged in a film formation chamber 10, and a thin film is formed in a surface of the substrate 14. The device has gas switching means (stacked valves 31, 32) for switching process gas to be supplied to the gas injection head 11 gradually; and a control means for switching process gas to be supplied to the gas injection head 11 gradually by controlling a gas switching means, so that process gas whereto the substrate 14 is exposed is switched gradually in any point on the film formation surface of the substrate 14, any point on a film formation surface of the substrate 14 is subjected to injection of process gas in the same conditions, and it is subjected to at least one revolution until thin film formation process is finished.

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