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1. 发明专利

DE69425348D1 未知
公开(公告)号：DE69425348D1
公开(公告)日：2000-08-31
申请号：DE69425348
申请日：1994-05-27
申请人： TOSHIBA KAWASAKI KK , EBARA CORP
发明人： MIYATA MASAHIRO , EZAWA HIROKAZU , OGURE NAOAKI , TSUJIMURA MANABU , OHDAIRA TAKEYUKI , INOUE HIROAKI , IKEDA YUKIO
IPC分类号： H01L23/52 , H01L21/3205 , H01L21/768 , H01L23/532

2. 发明专利

DE69425348T2 未知
公开(公告)号：DE69425348T2
公开(公告)日：2001-01-25
申请号：DE69425348
申请日：1994-05-27
申请人： TOSHIBA KAWASAKI KK , EBARA CORP
发明人： MIYATA MASAHIRO , EZAWA HIROKAZU , OGURE NAOAKI , TSUJIMURA MANABU , OHDAIRA TAKEYUKI , INOUE HIROAKI , IKEDA YUKIO
IPC分类号： H01L23/52 , H01L21/3205 , H01L21/768 , H01L23/532

3. 发明申请

WO0010200A8 WAFER PLATING METHOD AND APPARATUS 审中-公开
标题翻译：抛光方法和装置
公开(公告)号：WO0010200A8
公开(公告)日：2000-04-27
申请号：PCT/JP9904349
申请日：1999-08-11
申请人： EBARA CORP , HONGO AKIHISA , OGURE NAOAKI , INOUE HIROAKI , SENDAI SATOSHI , IKEGAMI TETSUMA , MISHIMA KOJI , OKUYAMA SHUICHI , NAGAI MIZUKI , KIMIZUKA RYOICHI , MARUYAMA MEGUMI
发明人： HONGO AKIHISA , OGURE NAOAKI , INOUE HIROAKI , SENDAI SATOSHI , IKEGAMI TETSUMA , MISHIMA KOJI , OKUYAMA SHUICHI , NAGAI MIZUKI , KIMIZUKA RYOICHI , MARUYAMA MEGUMI
IPC分类号： C23C18/16 , C23C18/38 , C25D3/38 , C25D7/12 , H01L21/288 , H01L21/768 , H05K3/10 , H05K3/24 , H05K3/42 , H01L21/3205
CPC分类号： H01L21/76843 , C23C18/1632 , C23C18/1653 , C23C18/1682 , C23C18/38 , C25D3/38 , C25D7/123 , C25D17/001 , H01L21/2885 , H01L21/76873 , H01L21/76874 , H01L21/76877 , H01L2221/1089 , H05K3/107 , H05K3/241 , H05K3/423
摘要： A method for plating through a simple manufacturing process a semiconductor wafer (W) so as to efficiently fill a fine recess (42) for interconnection made in the wafer (W) with a plating metal (43) having little voids and immune to contamination and to create an interconnection, comprising an electroless plating step of forming an initial film (41) on the wafer (W) and an electroplating step of filling the recess by electroplating using the initial film as the electricity feeding layer. An apparatus for plating a semiconductor wafer by such a method is also disclosed.
摘要翻译：一种通过简单的制造工艺对半导体晶片（W）进行电镀的方法，以便有效地填充用晶片（W）制成的互连用的微细凹槽（42），其中电镀金属（43）具有很小的空隙并且不受污染，并且以形成互连，包括在晶片（W）上形成初始膜（41）的无电电镀步骤以及使用初始膜作为馈电层通过电镀填充凹部的电镀步骤。还公开了一种通过这种方法电镀半导体晶片的装置。

4. 发明申请

WO9807175A2 ELECTRON-BEAM IRRADIATION APPARATUS 审中-公开
标题翻译：电子束辐射装置
公开(公告)号：WO9807175A2
公开(公告)日：1998-02-19
申请号：PCT/JP9702775
申请日：1997-08-08
申请人： EBARA CORP , IZUTSU MASAHIRO , OGURE NAOAKI
发明人： IZUTSU MASAHIRO , OGURE NAOAKI
IPC分类号： G21K5/00 , H01J5/18 , H01J33/04 , H01J37/301
CPC分类号： H01J5/18 , H01J33/04
摘要： An electron-beam irradiation apparatus allows electron beam generated in a vacuum container to pass through a window foil that partitions the vacuum container from a process vessel and irradiates gas containing moisture with electron beam to thereby process the gas. The electron-beam irradiation apparatus comprises a vacuum container (1) for generating electron beam, a process vessel (2) for containing the wet gas, and a window foil or window foils (3, 4) for partitioning the vacuum container from the process vessel and allowing the electron beam to pass therethrough. The window foil (4) has a surface for contacting the wet gas and is made of titanium or an alloy containing titanium as main component, and the surface of the window foil (4) is coated with one of the platinum metals such as palladium.
摘要翻译：电子束照射装置允许在真空容器中产生的电子束通过从处理容器分隔真空容器的窗口箔，并用电子束照射含有水分的气体，从而处理气体。电子束照射装置包括用于产生电子束的真空容器（1），用于容纳湿气的处理容器（2）和用于将真空容器从该方法分隔开的窗口箔或窗口箔（3,4）容器并允许电子束通过。窗口箔（4）具有用于接触湿气体的表面，并且由钛或含有钛作为主要成分的合金制成，并且窗口箔（4）的表面涂覆有钯金属之一。

5. 发明专利

DE69839066T2 未知
公开(公告)号：DE69839066T2
公开(公告)日：2009-01-22
申请号：DE69839066
申请日：1998-09-17
申请人： EBARA CORP
发明人： HONGO AKIHISA , OGURE NAOAKI , INOUE HIROAKI , KIMURA NORIO , KURIYAMA FUMIO , TSUJIMURA MANABU , SUZUKI KENICHI , CHONO ATSUSHI
IPC分类号： H01L21/00 , C25D7/12 , H01L21/288 , H01L21/768
摘要： A substrate plating apparatus forms an interconnection layer on an interconnection region composed of a fine groove and/or a fine hole defined in a substrate. The substrate plating apparatus includes a plating unit for forming a plated layer on a surface of the substrate including the interconnection region, a chemical mechanical polishing unit for chemically mechanically polishing the substrate to remove the plated layer from the surface of the substrate leaving a portion of the plated layer in the interconnection region, a cleaning unit for cleaning the substrate after the plated layer is formed or the substrate is chemically mechanically polished, a drying unit for drying the substrate after the substrate is cleaned, and a substrate transfer unit for transferring the substrate to and from each of the first plating unit, the first chemical mechanical polishing unit, the cleaning unit, and the drying unit. The first plating unit, the first chemical mechanical polishing unit, the cleaning unit, the drying unit, and the substrate transfer unit being combined into a single unitary arrangement.

6. 发明专利

DE69829716D1 未知
公开(公告)号：DE69829716D1
公开(公告)日：2005-05-19
申请号：DE69829716
申请日：1998-09-18
申请人： EBARA CORP
发明人： OGURE NAOAKI , INOUE HIROAKI
IPC分类号： H01L23/52 , H01L21/288 , H01L21/3205 , H01L21/768 , H01L23/532
摘要： The embedded interconnections (15) of copper in an insulating layer (10) over a substrate, have protective silver films (17). The embedded interconnections are covered by another insulating layer. Independent claims are also included for the following: (1) multilayer embedded copper interconnection structure; and (2) method of forming embedded interconnections of copper.

7. 发明专利

DE69716385T2 未知
公开(公告)号：DE69716385T2
公开(公告)日：2003-08-28
申请号：DE69716385
申请日：1997-04-21
申请人： EBARA CORP
发明人： OGURE NAOAKI , TERASHIMA KAZUYOSHI
IPC分类号： C30B29/06 , C30B15/00 , C30B15/02 , C30B15/20 , H01L31/04 , C30B15/10 , C30B15/12
摘要： A liquid material such as molten silicon is stored in a crucible. A liquid material, which is identical to and held in the same conditions as the liquid material in the crucible, is continuously supplied from an auxiliary crucible to the crucible to keep constant the surface level of the liquid material in the crucible. The liquid material is continuously pulled up from the crucible at a predetermined speed while the liquid material is being solidified into a solid material such as a ribbon-like thin web of single-crystal silicon.

8. 发明公开

EP1716947A4 COMPOSITE NANOPARTICLE AND PROCESS FOR PRODUCING THE SAME 审中-公开
标题翻译：复合纳米粒子和方法及其
公开(公告)号：EP1716947A4
公开(公告)日：2009-07-22
申请号：EP05710150
申请日：2005-02-04
申请人： EBARA CORP
发明人： CHIKAMORI YUSUKE , OGURE NAOAKI
IPC分类号： B22F1/00 , B22F1/02 , B22F9/24 , B22F9/30 , B23K35/34 , H01B5/00
CPC分类号： B22F1/0018 , B22F1/0062 , B22F2998/10 , B82Y30/00 , Y10S977/773 , Y10S977/83 , Y10T428/2991 , B22F9/30 , B22F9/22
摘要： Composite nanoparticles can have their temperature for metal nuclei uniform sintering substantially lowered through organic substance desorption from the metal nuclei and thus can be used as a substitute for solder welding. There is provided composite nanoparticle (10) comprising a core portion of metal component (12) and, surrounding the metal component, organic substance (14) linked thereto through physical adsorption. This composite nanoparticle can be produced by causing an inorganic metal salt and an organic substance to coexist and heating the metal salt and organic substance to a given temperature and maintaining the temperature for a given period of time so that the inorganic metal salt is decomposed so as to form metal nanoparticles and so that while avoiding reaction of the metal nanoparticles with the organic substance resulting in formation of an organometallic compound, the organic substance is linked to the periphery of the metal nanoparticles through physical adsorption.

9. 发明公开

EP1126512A4 WAFER PLATING METHOD AND APPARATUS 审中-公开
标题翻译： ABSCHEIDUNGSMETHODE UND -APPARATFÜRHALBLEITERSCHEIBEN
公开(公告)号：EP1126512A4
公开(公告)日：2007-10-17
申请号：EP99937028
申请日：1999-08-11
申请人： EBARA CORP
发明人： HONGO AKIHISA , OGURE NAOAKI , INOUE HIROAKI , SENDAI SATOSHI , IKEGAMI TETSUMA , MISHIMA KOJI , OKUYAMA SHUICHI , NAGAI MIZUKI , KIMIZUKA RYOICHI , MARUYAMA MEGUMI
IPC分类号： C23C18/16 , C23C18/38 , C25D3/38 , C25D7/12 , H01L21/288 , H01L21/768 , H05K3/10 , H05K3/24 , H05K3/42 , H01L21/3205
CPC分类号： H01L21/76843 , C23C18/1632 , C23C18/1653 , C23C18/1682 , C23C18/38 , C25D3/38 , C25D7/123 , C25D17/001 , H01L21/2885 , H01L21/76873 , H01L21/76874 , H01L21/76877 , H01L2221/1089 , H05K3/107 , H05K3/241 , H05K3/423
摘要： A method for plating through a simple manufacturing process a semiconductor wafer (W) so as to efficiently fill a fine recess (42) for interconnection made in the wafer (W) with a plating metal (43) having little voids and immune to contamination and to create an interconnection, comprising an electroless plating step of forming an initial film (41) on the wafer (W) and an electroplating step of filling the recess by electroplating using the initial film as the electricity feeding layer. An apparatus for plating a semiconductor wafer by such a method is also disclosed.
摘要翻译：一种通过简单的制造工艺对半导体晶片（W）进行电镀的方法，以便利用几乎没有空隙且不受污染的电镀金属（43）在晶片（W）中有效地填充用于互连的微小凹槽（42）包括在晶片（W）上形成初始膜（41）的无电电镀步骤和通过使用初始膜作为电馈送层通过电镀填充凹槽的电镀步骤。还公开了通过这种方法镀覆半导体晶片的设备。

10. 发明公开

EP1158573A4 METHOD AND APPARATUS FOR FORMING INTERCONNECTION 审中-公开
标题翻译：方法和装置于连接舍宾
公开(公告)号：EP1158573A4
公开(公告)日：2008-09-24
申请号：EP00966463
申请日：2000-10-13
申请人： EBARA CORP
发明人： FUKUNAGA AKIRA , HORIE KUNIAKI , OGURE NAOAKI , KATO TAKAO , HONGO AKIHISA , NAGASAWA HIROSHI
IPC分类号： B05C11/08 , C23C18/00 , C23C18/02 , C23C18/08 , C23C20/04 , H01L21/00 , H01L21/288 , H01L21/768 , H01L23/532 , H05K1/03 , H05K3/04 , H05K3/10 , H05K3/40 , B05C3/02 , B05D1/40 , H01L21/3205 , H05K3/22
CPC分类号： H05K3/4061 , B05C11/08 , C23C18/02 , C23C18/08 , H01L21/288 , H01L21/6715 , H01L21/76877 , H01L23/53238 , H01L2924/0002 , H05K1/0306 , H05K3/045 , H05K3/102 , H05K2201/0257 , H01L2924/00
摘要： A method and apparatus for forming fine interconnection in a large-scale integrated circuit fabricated on a semiconductor substrate comprising a step of preparing a substrate having a surface in which fine recesses are formed, a step of preparing an ultrafine particle dispersion liquid by dispersing ultrafine particles at least part of which comprise a metal in a specified solvent, a step of supplying the ultrafine particle dispersion liquid into the fine recesses, a step of heat-treating the substrate to melt and bond the metal, and a step of removing extra metal from the surface of the substrate by chemical mechanical polishing. A high-quality metallization can be deposited stably using inexpensive materials.

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